CN103643085A - Embedded film resistor material and its preparation method - Google Patents
Embedded film resistor material and its preparation method Download PDFInfo
- Publication number
- CN103643085A CN103643085A CN201310566007.5A CN201310566007A CN103643085A CN 103643085 A CN103643085 A CN 103643085A CN 201310566007 A CN201310566007 A CN 201310566007A CN 103643085 A CN103643085 A CN 103643085A
- Authority
- CN
- China
- Prior art keywords
- carbon
- film
- chromium triangle
- nickel chromium
- film resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to an embedded film resistor material and a preparation method. The embedded film resistor material comprises the following components by atom percentages: 50-76% of nickel, 10-18% of chromium, 10-30% of carbon and 0.5-5% of tungsten. A magnetron sputtering technology is used for depositing nickel atom, chromium atom, carbon atom and tungsten atom on a copper foil substrate to obtain a nickel chromium carbon tungsten film, and experiments show that the embedded film stock solution using the nickel chromium carbon tungsten film has stable electrical property and high sheet resistance.
Description
Technical field
The present invention relates to electronic material and technical field of electronic components, particularly relate to a kind of embed type film resistor material and preparation method thereof.
Background technology
The development trend of electronic devices and components high-performance, miniaturization, requires the electronic devices and components quantity that printed circuit board (PCB) unit surface mounts constantly to increase, and causes printed circuit board surface to amass over-saturation.Compare with traditional discrete resistance, embed type thin film resistor device (burying resistance) can be saved wiring distance, reduces and mounts component number, reduces circuit card dimension and weight; Can reduce the induction reactance producing in parasitic inductance in signals transmission and surface mount or plug-in unit processing; Can improve the impedance matching ability of circuit; Can reduce signal cross-talk, noise and electromagnetic interference.Embed type thin film resistor device reliability is high, and resistance value is stable, and loss is little.Embed type thin film resistor device is that film resistor material is overlayed on special-purpose semicure resin board, forms sheet resistance after etching, is then laminated into printed wiring intralamellar part.
The embed type film resistor material of Foreign Modern table has: the NiP that Ohmega Ply company adopts electrochemical plating to produce buries resistance material, the NiCr that GOULD electronics, inc. adopts magnetron sputtering method to produce, these material sheet resistance value tolerances are little, electric performance stablity, but sheet resistance value is less than normal, use range is limited, and various aspects of performance also also has the space promoting.Domestic, embed type film resistor material many places, in development, also do not enter industrialization completely.
Summary of the invention
Based on this, be necessary to provide a kind of embed type film resistor material that can improve the electric performance stablity of embed type thin film resistor device and improve sheet resistance value.
An embed type film resistor material, by atomic percent, comprising:
An embed type film resistor material, comprises nickel chromium triangle carbon W film, and the element of described nickel chromium triangle carbon W film, by atomic percent, comprises nickel 50～76%, chromium 10～18%, carbon 10～30% and tungsten 0.5～5%.
In an embodiment, also comprise substrate therein, described nickel chromium triangle carbon W film is deposited on described substrate.
In an embodiment, described substrate is low profile flexible copper clad therein.
In an embodiment, the thickness of described nickel chromium triangle carbon W film is 85 nanometer～200 nanometers therein.
A preparation method for embed type film resistor material, comprises the steps:
Substrate is provided; And
Adopt sputtering method on described substrate, to form nickel chromium triangle carbon W film, obtain embed type film resistor material, wherein, the element of described nickel chromium triangle carbon W film, by atomic percent, comprises nickel 50～76%, chromium 10～18%, carbon 10～30% and tungsten 0.5～5%.
In an embodiment, described employing sputtering method forms after the step of nickel chromium triangle carbon W film on described substrate therein, also comprises the step of described nickel chromium triangle carbon W film being carried out to high temperature annealing.
In an embodiment, the step of described high temperature annealing is in shielding gas atmosphere therein, anneals 480 seconds～720 seconds at 250 ℃～400 ℃.
Therein in an embodiment, the step that described employing sputtering method forms nickel chromium triangle carbon W film on described substrate is to adopt nichrome target, carbon target and tungsten target material, nickel chromium triangle, carbon and tungsten are sputtered onto on described substrate, on described substrate, deposit nickel chromium triangle carbon W film.
Therein in an embodiment, described employing sputtering method forms in the step of nickel chromium triangle carbon W film on described substrate, the electric current of described nichrome target is 2～5 peaces, and the electric current of described carbon target is 1 peace～1.5 peace, and the electric current of described tungsten target material is 0.1 peace～0.3 peace.
In an embodiment, described employing sputtering method forms in the step of nickel chromium triangle carbon W film on described substrate, applies the bias voltage of 30 volts～120 volts on described substrate therein.
In an embodiment, described employing sputtering method forms in the step of nickel chromium triangle carbon W film on described substrate therein, described substrate rotation, and the speed of described rotation is 4 revs/min.
Above-mentioned embed type film resistor material, by atomic percent, comprises nickel 50～76%, chromium 10～18%, carbon 10～30% and tungsten 0.5～5%.By magnetron sputtering technique, nickel, chromium, carbon and tungsten atom are deposited on Copper Foil substrate and obtain nickel chromium triangle carbon W film, our experiments show that, use the electrical property of embed type thin film resistor device of this nickel chromium triangle carbon W film more stable, sheet resistance value is higher.
Accompanying drawing explanation
Fig. 1 is preparation method's the schema of the embed type film resistor material of an embodiment;
Fig. 2 is temperature coefficient of resistance (TCR) the variation with temperature curve of the embed type film resistor material of embodiment 1 and the embed type film resistor material of comparative example 1;
Fig. 3 is temperature coefficient of resistance (TCR) the variation with temperature curve of the embed type film resistor material of embodiment 2 and the embed type film resistor material of comparative example 2;
Fig. 4 is temperature coefficient of resistance (TCR) the variation with temperature curve of the embed type film resistor material of embodiment 3 and the embed type film resistor material of comparative example 1;
Fig. 5 is temperature coefficient of resistance (TCR) the variation with temperature curve of the embed type film resistor material of embodiment 4 and the embed type film resistor material of comparative example 2;
Fig. 6 is the polarization curve of the embed type film resistor material of embodiment 1 and the embed type film resistor material of comparative example 1;
Fig. 7 is the polarization curve of the embed type film resistor material of embodiment 2 and the embed type film resistor material of comparative example 2;
Fig. 8 soaks SEM shape appearance figure after 85 hours in nickel chromium triangle carbon tungsten (NiCrCW) film of the embodiment 1 preparation H2SO4 that is 60% at mass percent concentration;
Fig. 9 soaks SEM shape appearance figure after 85 hours in nickel chromium triangle (NiCr) film of preparation in comparative example 1 H2SO4 that is 60% at mass percent concentration.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement to be much different from alternate manner described here, and those skilled in the art can do similar improvement without prejudice to intension of the present invention in the situation that, so the present invention is not subject to the restriction of following public concrete enforcement.
The embed type film resistor material of one embodiment, by atomic percent, comprises nickel 50～76%, chromium 10～18%, carbon 10～30% and tungsten 0.5～5%.
Use above-mentioned alloy material to prepare nickel chromium triangle carbon W film, this nickel chromium triangle carbon W film can be used in prepares that electrical property is stable, the higher embed type thin film resistor device of sheet resistance value.
The embed type film resistor material of another embodiment, comprises nickel chromium triangle carbon W film.
The material of nickel chromium triangle carbon W film is usingd nickel (Ni) and chromium (Cr) as material of main part, and appropriate carbon (C) and tungsten (W) adulterate.Wherein, by atomic percent, nickel accounts for 50～76%, and chromium accounts for 10～18%, and carbon accounts for 10～30%, and tungsten accounts for 0.5%～5%.
Preferably, the thickness of nickel chromium triangle carbon W film is 85 nanometer～200 nanometers.
This nickel chromium triangle carbon W film is usingd Ni and Cr as material of main part, appropriate C element and micro-W element adulterate, make this nickel chromium triangle carbon W film there is stable electrical property, large sheet resistance value, high hardness, good erosion resistance and wear resistance, have better properties than existing Of NiCr Alloy Films Resistance material.
Carbon mainly exists with amorphous and nanocrystalline mixed structure form at nickel chromium triangle carbon W film; their mixed interface can promote the diffusion of chromium element in nichrome; thereby make chromium more easily on surface, form fine and close chromium sesquioxide protective membrane, make the corrosion resistance nature of nickel chromium triangle carbon W film higher.
The stable chemical nature of W elements, even in heating in the situation that, also not can with the strong acid effect such as hydrochloric acid, sulfuric acid, even can not be dissolved in chloroazotic acid, be only corrosive extremely strong hydrofluoric acid and the mixture of nitric acid, could dissolve tungsten.W elements has further improved the corrosion resistance nature of nickel chromium triangle carbon W film.
Preferably, embed type film resistor material also comprises substrate, and nickel chromium triangle carbon W film is deposited on substrate.
Substrate is ceramic substrate or metal substrate, is preferably low profile (VLP) flexible copper clad.Two relative surfaces of low profile flexible copper clad are respectively light face and hair side, and the roughness of hair side is comparatively even.
Preferably, nickel chromium triangle carbon W film is deposited on the hair side of low profile flexible copper clad, not only can increase the sheet resistance value of nickel chromium triangle carbon W film, can also improve the bonding force of nickel chromium triangle carbon W film and substrate, be conducive to prepare that sheet resistance value is high, the embed type thin film resistor device of good stability.
Our experiments show that, above-mentioned embed type film resistor material has higher electric performance stablity and higher sheet resistance value, and, there is higher hardness, higher corrosion resistance nature and compared with high-wearing feature, make this embed type film resistor material have higher using value, range of application is wider.
While applying this embed type film resistor material, what this embed type film resistor material was carried out to etching obtains needing buries resistance device, is then laminated to printed wiring intralamellar part.
Nickel chromium triangle carbon W film is etched into and is buried after resistance device, bury the low profile flexible copper clad that retains of resistance two ends and can be used as the electrode that buries resistance, saved the step of preparing in addition electrode, be conducive to reduce costs.
And adopting low profile (VLP) flexible copper clad is substrate, when preparing nickel chromium triangle carbon W film, can realize circle around formula plated film, be applicable to suitability for industrialized production.
Refer to Fig. 1, the preparation method of the embed type film resistor material of an embodiment, comprises the steps:
Step S110: substrate is provided.
Substrate is preferably low profile flexible copper clad.
By substrate each ultrasonic cleaning 10 minutes in anhydrous propanone, dehydrated alcohol and deionized water successively, then dry up by nitrogen gun, then with clean glass plate, flatten stand-by.
Step S120: adopt sputtering method to form nickel chromium triangle carbon W film on substrate, obtain embed type film resistor material, wherein, the element of nickel chromium triangle carbon W film, by atomic percent, comprises nickel 50～76%, chromium 10～18%, carbon 10～30% and tungsten 0.5～5%.
Nichrome target (NiCr) is placed in to the negative electrode target position 1 of vacuum sputtering chamber, carbon target (C) is placed in negative electrode target position 2, and tungsten target material (W) is placed in negative electrode target position 3, and substrate is fixed on rotational workpieces frame.
Wherein, the nickel of nichrome target and the atomic ratio of chromium are 4:1.The purity of nichrome target, carbon target and tungsten target material is 99.99%.
By the sealing of vacuum sputtering chamber, by pumped vacuum systems, make the vacuum tightness of vacuum sputtering chamber reach 3.0 * 10
-5～4.5 * 10
-5tuo Sila.Pass into argon gas, gas flow is 25～30sccm, when vacuum sputtering chamber pressure reaches 1.1 * 10
-3～1.5 * 10
-3during Tuo Sila, start ionization power supply, substrate surface is ionized to cleaning, and scavenging period is 5～10 minutes, then at room temperature opens the shielding power supply of nichrome target, carbon target and tungsten target material three targets simultaneously, after pre-sputtering 5～10 minutes, open the turn switch of rotational workpieces frame, rotational workpieces frame is rotated and drive substrate rotation, sputter 4～16 minutes, nickel chromium triangle carbon tungsten is deposited on substrate, thereby on substrate, forms nickel chromium triangle carbon W film.
First pre-sputtering is carried out sputter again after 5～10 minutes, remove the dust of each target material surface, is conducive to obtain the measured nickel chromium triangle carbon of matter W film.
Preferably, in sputter procedure, the electric current of nichrome target is 2～5 peaces, and the electric current of carbon target is 1～1.5 peace, and the electric current of tungsten target material is 0.1～0.3 peace.
Preferably, in sputter procedure, on substrate, apply the bias voltage of 30 volts～120 volts.
Preferably, in sputter procedure, the speed of rotation of substrate is 4 revs/min.
The electric current of nichrome target is 2～5 peaces, the electric current of carbon target is 1～1.5 peace, the electric current of tungsten target material is 0.1～0.3 peace, on substrate, apply the 30 volts～bias voltage of 120 volts and the speed of rotation of substrate is sputter nickel chromium triangle under the sputtering condition of 4 revs/min, carbon and tungsten, is conducive to form the nickel chromium triangle carbon W film that compactness is higher, defect is few.
Preferably, adopt closed field unbalanced magnetron sputtering technology to carry out sputter.With respect to traditional unbalanced magnetron sputter, the nickel chromium triangle carbon W film of closed field unbalanced magnetron sputtering formation is finer and close, defect is few, and quality is high.And, adopt closed field unbalanced magnetron sputtering technology to carry out sputter, be conducive to improve the bonding force of nickel chromium triangle carbon W film and substrate.
Preferably, adopt sputtering method on substrate, to form after nickel chromium triangle carbon W film, also comprise the step of nickel chromium triangle carbon W film being carried out to high temperature annealing.
The step of high temperature annealing is preferably in shielding gas atmosphere, anneals 480 seconds～720 seconds at 250 ℃～400 ℃.
Sputter is complete, after circulating water, takes out and is deposited on the nickel chromium triangle carbon W film substrate, and put into RTP-500 type fast heat treatment device and carry out anneal from vacuum sputtering chamber.Annealing conditions is under shielding gas atmosphere, and at 250 ℃～400 ℃, short annealing is 480 seconds～720 seconds, the embed type film resistor material after cooling rear taking-up annealing.
Wherein, the element of nickel chromium triangle carbon W film, by atomic percent, comprises nickel 50～76%, chromium 10～18%, carbon 10～30% and tungsten 0.5～5%.
Shielding gas is the rare gas elementes such as nitrogen, argon gas, helium, is preferably nitrogen.
At 250 ℃～400 ℃, anneal 480 seconds～720 seconds, the stress of resulting nickel chromium triangle carbon W film is little, defect is few, electric performance stablity.
Preparation method's technique of above-mentioned embed type film resistor material is simple, and the compactness of the prepared nickel chromium triangle carbon W film that obtains embed type film resistor material is high, good uniformity, and higher with the bonding force of substrate.And this preparation method is suitable for large-area coating film and produces, and is conducive to suitability for industrialized production.
By specific embodiment, further set forth below.
Prepare embed type film resistor material
(1) area, be each ultrasonic cleaning 10 minutes in anhydrous propanone, raw spirit and deionized water successively of 9cm * 9cm low profile flexible copper clad, then dry up by nitrogen gun, then with clean sheet glass, flatten stand-by;
(2) the low profile flexible copper clad of pressing is placed on the rotational workpieces frame of vacuum sputtering chamber, and closes vacuum sputtering chamber.Open pumped vacuum systems, when the vacuum tightness of vacuum sputtering chamber reaches 4.0 * 10
-5during Tuo Sila, pass into argon gas, gas flow is 25sccm, start ionization power supply, to substrate surface, ionization is cleaned 10 minutes, opens immediately the shielding power supply of nichrome target, carbon target and tungsten target material three targets, sputter 4 minutes, forms and is deposited on the nickel chromium triangle carbon W film on substrate.Wherein, the target current of nichrome target, carbon target and tungsten target material is made as respectively 3 peaces, 1 peace and 0.1 peace, and the bias voltage being applied on substrate is 90 volts, and underlayer temperature is room temperature, and the rotating speed of rotational workpieces frame is made as 4 revs/min;
(3) after sputter completes, after circulating water, from vacuum sputtering chamber, take out and be deposited on the nickel chromium triangle carbon W film substrate, the thickness of nickel chromium triangle carbon W film is about 91 nanometers.The element of nickel chromium triangle carbon W film comprises nickel 65.0at.%, chromium 16.5at.%, carbon 17.6at.%, tungsten 0.9at.% by atomic percent.
Prepare embed type film resistor material
(1) area, be each ultrasonic cleaning 10 minutes in anhydrous propanone, raw spirit and deionized water successively of 9cm * 9cm low profile flexible copper clad, then dry up by nitrogen gun, then with clean sheet glass, flatten stand-by;
(2) the low profile flexible copper clad of pressing is placed on the rotational workpieces frame of vacuum sputtering chamber, and closes vacuum sputtering chamber.Open pumped vacuum systems, when the vacuum tightness of vacuum sputtering chamber reaches 4.0 * 10
-5during Tuo Sila, pass into argon gas, gas flow is 25sccm, start ionization power supply, to substrate surface, ionization is cleaned 10 minutes, opens immediately the shielding power supply of nichrome target, carbon target and tungsten target material three targets, sputter 4 minutes, forms and is deposited on the deposited nickel chromium triangle carbon W film on substrate.Wherein, the target current of nichrome target, carbon target and tungsten target material is made as respectively 3 peaces, 1 peace and 0.1 peace, and the bias voltage being applied on substrate is 90 volts, and underlayer temperature is room temperature, and the rotating speed of rotational workpieces frame is made as 4 revs/min;
(3), after sputter completes, after circulating water, from vacuum sputtering chamber, take out the nickel chromium triangle carbon W film that is deposited on substrate.The nickel chromium triangle carbon W film that this is deposited on to substrate is put into RTP-500 type fast heat treatment device and is carried out anneal, and annealing conditions is: under nitrogen protection, at 300 ℃, anneal 540 seconds, and the nickel chromium triangle carbon W film resistive material after the annealing obtaining.Wherein, the thickness of nickel chromium triangle carbon W film is 88.9 nanometers.The element of nickel chromium triangle carbon W film comprises nickel 62.7at.%, chromium 17.1at.%, carbon 19.4at.%, tungsten 0.8at.% by atomic percent.
Prepare embed type film resistor material
(1) area, be each ultrasonic cleaning 10 minutes in anhydrous propanone, raw spirit and deionized water successively of 9cm * 9cm low profile flexible copper clad, then dry up by nitrogen gun, then with clean sheet glass, flatten stand-by;
(2) the low profile flexible copper clad of pressing is placed on the rotational workpieces frame of vacuum sputtering chamber, and closes vacuum sputtering chamber.Open pumped vacuum systems, when the vacuum tightness of vacuum sputtering chamber reaches 4.0 * 10
-5during Tuo Sila, pass into argon gas, gas flow is 25sccm, start ionization power supply, to substrate surface, ionization is cleaned 10 minutes, opens immediately the shielding power supply of nichrome target, carbon target and tungsten target material three targets, sputter 4 minutes, formation is deposited on the deposited nickel chromium triangle carbon W film on substrate, obtains embed type film resistor material.Wherein, the target current of nichrome target, carbon target and tungsten target material is made as respectively 3 peaces, 1.5 peaces and 0.1 peace, and the bias voltage being applied on substrate is 90 volts, and underlayer temperature is room temperature, and the rotating speed of rotational workpieces frame is made as 4 revs/min.Wherein, the thickness of nickel chromium triangle carbon W film is 93.7 nanometers.The element of nickel chromium triangle carbon W film comprises nickel 60.4at.%, chromium 14.6at.%, carbon 24.1at.%, tungsten 0.9at.% by atomic percent.
Prepare embed type film resistor material
(1) area, be each ultrasonic cleaning 10 minutes in anhydrous propanone, raw spirit and deionized water successively of 9cm * 9cm low profile flexible copper clad, then dry up by nitrogen gun, then with clean sheet glass, flatten stand-by;
(2) the low profile flexible copper clad of pressing is placed on the rotational workpieces frame of vacuum sputtering chamber, and closes vacuum sputtering chamber.Open pumped vacuum systems, when the vacuum tightness of vacuum sputtering chamber reaches 4.0 * 10
-5during Tuo Sila, pass into argon gas, gas flow is 25sccm, start ionization power supply, to substrate surface, ionization is cleaned 10 minutes, opens immediately the shielding power supply of nichrome target, carbon target and tungsten target material three targets, sputter 4 minutes, formation is deposited on the deposited nickel chromium triangle carbon W film on substrate, obtains embed type film resistor material.Wherein, the target current of nichrome target, carbon target and tungsten target material is made as respectively 3 peaces, 1.5 peaces and 0.1 peace, and the bias voltage being applied on substrate is 90 volts, and underlayer temperature is room temperature, and the rotating speed of rotational workpieces frame is made as 4 revs/min.The nickel chromium triangle carbon W film that this is deposited on to substrate is put into RTP-500 type fast heat treatment device and is carried out anneal, and annealing conditions is: under nitrogen protection, at 300 ℃, anneal 540 seconds, and the nickel chromium triangle carbon W film resistive material after the annealing obtaining.Wherein, the thickness of nickel chromium triangle carbon W film is 91.5 nanometers.The element of nickel chromium triangle carbon W film comprises nickel 60.1at.%, chromium 13.8at.%, carbon 25.3at.%, tungsten 0.8at.% by atomic percent.
Comparative example 1
Prepare embed type film resistor material
(1) area, be each ultrasonic cleaning 10 minutes in anhydrous propanone, raw spirit and deionized water successively of 9cm * 9cm low profile flexible copper clad, then dry up by nitrogen gun, then with clean sheet glass, flatten stand-by;
(2) the low profile flexible copper clad of pressing is placed on the rotational workpieces frame of vacuum sputtering chamber, and closes vacuum sputtering chamber.Open pumped vacuum systems, when the vacuum tightness of vacuum sputtering chamber reaches 4.0 * 10
-5during Tuo Sila, pass into argon gas, gas flow is 25sccm, starts ionization power supply, and to substrate surface, ionization is cleaned 10 minutes, opens immediately nichrome target as sputter power supply, and sputter 4 minutes forms and is deposited on the deposited nickel-chromium thin film on substrate.The target current of nichrome target is made as 3 peaces, and the bias voltage being applied on substrate is 90 volts, and underlayer temperature is room temperature, and the rotating speed of rotational workpieces frame is made as 4 revs/min;
(3), after sputter completes, after circulating water, from vacuum sputtering chamber, take out the nickel-chromium thin film that is deposited on substrate.The thickness of nickel-chromium thin film is about 94.8 nanometers.The element of nickel-chromium thin film comprises nickel 78.9at.% and chromium 21.1at.% by atomic percent.
Comparative example 2
Prepare embed type film resistor material
(1) area, be each ultrasonic cleaning 10 minutes in anhydrous propanone, raw spirit and deionized water successively of 9cm * 9cm low profile flexible copper clad, then dry up by nitrogen gun, then with clean sheet glass, flatten stand-by;
(2) the low profile flexible copper clad of pressing is placed on the rotational workpieces frame of vacuum sputtering chamber, and closes vacuum sputtering chamber.Open pumped vacuum systems, when the vacuum tightness of vacuum sputtering chamber reaches 4.0 * 10
-5during Tuo Sila, pass into argon gas, gas flow is 25sccm, starts ionization power supply, and to substrate surface, ionization is cleaned 10 minutes, opens immediately nichrome target as sputter power supply, and sputter 4 minutes forms and is deposited on the deposited nickel-chromium thin film on substrate.The target current of nichrome target is made as 3 peaces, and the bias voltage being applied on substrate is 90 volts, and underlayer temperature is room temperature, and the rotating speed of rotational workpieces frame is made as 4 revs/min;
(3), after sputter completes, after circulating water, from vacuum sputtering chamber, take out the nickel-chromium thin film that is deposited on substrate.The RTP-500 type of the putting into fast heat treatment device that this is deposited on to the nickel chromium triangle carbon W film of substrate carries out anneal, and annealing conditions is: under nitrogen protection, at 300 ℃, anneal 540 seconds, and the Of NiCr Alloy Films Resistance material after the annealing obtaining.Wherein, the thickness of nickel-chromium thin film is 92.6 nanometers.The element of nickel-chromium thin film comprises nickel 77.3at.% and chromium 22.7at.% by atomic percent.
The nickel chromium triangle carbon W film of embodiment 1～embodiment 4 and comparative example 1～comparative example 2 and nickel-chromium thin film are etched into and are buried after resistance device, with HFSE-PB4 type detection probes platform, be heated rapidly to 250 ℃ respectively, and then be cooled to equably gradually 10 ℃, with Keithley2410 type digital sourcemeter, survey its resistance value in process of cooling, according to formula
calculate the temperature coefficient of resistance that buries resistance, make the temperature coefficient of resistance of embodiment 1 and comparative example 1 about the relation curve (Fig. 2) of temperature, the temperature coefficient of resistance of embodiment 2 and comparative example 2 is about the relation curve (Fig. 3) of temperature, the temperature coefficient of resistance of embodiment 3 and comparative example 1 is about the relation curve (Fig. 4) of temperature, and the temperature coefficient of resistance of embodiment 4 and comparative example 2 is about the relation curve (Fig. 5) of temperature.
As seen from Figure 2, the temperature coefficient of resistance variation with temperature curve of the NiCrCW film of deposited (example 1) is more steady than the NiCr film of deposited (comparative example 1) curve, and the temperature coefficient of resistance variation range of the two is respectively 3.39≤| TCR
niCrCW|≤219.62ppm/K, 165.72≤TCR
niCr≤ 378.97ppm/K, illustrates that the NiCrCW film of deposited is more stable than the electrical property of corresponding NiCr film.
As seen from Figure 3, the NiCrCW sheet resistance temperature factor variation with temperature curve after 300 ℃ of annealing than the same terms under the curve of NiCr film after annealing steady.The temperature coefficient of resistance variation range of the two is respectively 2.86≤TCR
niCrCW≤ 199.97ppm/K, 35.26≤TCR
niCr≤ 327.31ppm/K, illustrates after 300 ℃ of annealing that the NiCr thin-film electro performance after NiCrCW film is than the same terms annealing is stable.
As seen from Figure 4, the temperature coefficient of resistance variation with temperature curve of the NiCrCW film of deposited (example 3) is more steady than the NiCr film of deposited (comparative example 1) curve, and the temperature coefficient of resistance variation range of the two is respectively 5.69≤| TCR
niCrCW≤ 101.15ppm/K, 165.72≤TCR
niCr≤ 378.97ppm/K, illustrates that the NiCr thin-film electro performance of ratio deposited of NiCrCW film of deposited is stable.
As seen from Figure 5, the NiCrCW film after 300 ℃ of annealing (embodiment 4) temperature coefficient of resistance variation with temperature curve than the same terms under the curve of NiCr film (embodiment 2) after annealing steady.The temperature coefficient of resistance variation range of the two is respectively 3.87≤TCR
niCrCW≤ 98.15ppm/K, 35.26≤TCR
niCr≤ 327.31ppm/K, illustrates after 300 ℃ of annealing that the NiCr thin-film electro performance after NiCrCW film is than the same terms annealing is stable.
From above four groups of data declarations, at NiCr, bury C element and the W element that adulterates appropriate resistance material, contribute to reduce the temperature coefficient of resistance of embed type film resistor material, to improving the electrical property of embed type film resistor material, have promoter action.
After measured, the sheet resistance value of embodiment 1 nickel chromium triangle carbon W film is 76.95 Ω/Sq, the sheet resistance value of embodiment 2 nickel chromium triangle carbon W films is 59.87 Ω/Sq, the sheet resistance value of embodiment 3 nickel chromium triangle carbon W films is 85.26 Ω/Sq, the sheet resistance value of embodiment 4 nickel chromium triangle carbon W films is 73.48 Ω/Sq, and the sheet resistance value of comparative example 1 is that the sheet resistance value of 62.84 Ω/Sq comparative example 2 is 50.05 Ω/Sq.These data declarations bury at NiCr the C element and the W element that in resistance material, adulterate appropriate can improve the sheet resistance value of burying resistance material.
Adopt the H that mass percent concentration is 60%
2sO
4as corrosive fluid, platinized platinum is supporting electrode, and the saturated calomel of standard is reference electrode, under room temperature, the passivation anodic polarization curves of the embed type film resistor material by electrochemical workstation test implementation example 1, embodiment 2, comparative example 1, comparative example 2, test result is shown in Fig. 6 and Fig. 7.
In Fig. 6, the NiCr film of the deposited of the corresponding comparative example 1 of NiCr, the NiCrCW film of the deposited of the corresponding embodiment 1 of NiCrCW.In Fig. 7, the NiCr film after the corresponding comparative example 2 of NiCr annealed, the annealed NiCrCW film of the corresponding embodiment 2 of NiCrCW.
From Fig. 6 and Fig. 7, no matter in deposited or after annealing, the corrosion current of NiCrCW film is little than NiCr film all, and NiCrCW film transpassivation current potential takes over, and these phenomenons all illustrate that in NiCr film, adulterate C element and W element are conducive to improve the erosion resistance of film.Because C mainly exists with amorphous and nanocrystalline mixed structure form in film, their mixed interface can promote the diffusion of Cr element in alloy, thereby makes Cr more easily on surface, form fine and close Cr
2o
3protective membrane.The chemical property of W is very stable, even in heating in the situation that, also not can with hydrochloric acid, effect of sulfuric acid, even can not be dissolved in chloroazotic acid, be only corrosive extremely strong hydrofluoric acid and the mixture of nitric acid, could dissolve tungsten.This explanation, embodiment 1 and embodiment 2 are higher than the erosion resistance of the embed type sheet resistance of comparative example 1 and comparative example 2 respectively.
Adopt the H that mass percent concentration is 60%
2sO
4as corrosive fluid, the embed type film resistor material of embodiment 1 and comparative example 1 is soaked 85 hours in corrosive fluid, then use scanning electron microscopic observation, respectively as shown in Figure 8 and Figure 9.Comparison diagram 8 and Fig. 9 can find out, from the size being corroded, NiCrCW film is obviously little, shows that the corrosion resistance nature of NiCrCW film is stronger than NiCr film.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (12)
1. an embed type film resistor material, is characterized in that, by atomic percent, comprising:
Nickel 50～76%, chromium 10～18%, carbon 10～30% and tungsten 0.5～5%.
2. an embed type film resistor material, is characterized in that, comprises nickel chromium triangle carbon W film, and the element of described nickel chromium triangle carbon W film, by atomic percent, comprises nickel 50～76%, chromium 10～18%, carbon 10～30% and tungsten 0.5～5%.
3. embed type film resistor material according to claim 2, is characterized in that, also comprises substrate, and described nickel chromium triangle carbon W film is deposited on described substrate.
4. embed type film resistor material according to claim 3, is characterized in that, described substrate is low profile flexible copper clad.
5. embed type film resistor material according to claim 2, is characterized in that, the thickness of described nickel chromium triangle carbon W film is 85 nanometer～200 nanometers.
6. a preparation method for embed type film resistor material, comprises the steps:
Substrate is provided; And
Adopt sputtering method on described substrate, to form nickel chromium triangle carbon W film, obtain embed type film resistor material, wherein, the element of described nickel chromium triangle carbon W film, by atomic percent, comprises nickel 50～76%, chromium 10～18%, carbon 10～30% and tungsten 0.5～5%.
7. the preparation method of embed type film resistor material according to claim 6, is characterized in that, described employing sputtering method forms after the step of nickel chromium triangle carbon W film on described substrate, also comprises the step of described nickel chromium triangle carbon W film being carried out to high temperature annealing.
8. the preparation method of embed type film resistor material according to claim 7, is characterized in that, the step of described high temperature annealing is in shielding gas atmosphere, anneals 480 seconds～720 seconds at 250 ℃～400 ℃.
9. the preparation method of embed type film resistor material according to claim 6, it is characterized in that, the step that described employing sputtering method forms nickel chromium triangle carbon W film on described substrate is to adopt nichrome target, carbon target and tungsten target material, nickel chromium triangle, carbon and tungsten are sputtered onto on described substrate, on described substrate, deposit nickel chromium triangle carbon W film.
10. the preparation method of embed type film resistor material according to claim 7, it is characterized in that, described employing sputtering method forms in the step of nickel chromium triangle carbon W film on described substrate, the electric current of described nichrome target is 2～5 peaces, the electric current of described carbon target is 1 peace～1.5 peace, and the electric current of described tungsten target material is 0.1 peace～0.3 peace.
The preparation method of 11. embed type film resistor materials according to claim 6, is characterized in that, described employing sputtering method forms in the step of nickel chromium triangle carbon W film on described substrate, applies the bias voltage of 30 volts～120 volts on described substrate.
The preparation method of 12. embed type film resistor materials according to claim 6, is characterized in that, described employing sputtering method forms in the step of nickel chromium triangle carbon W film on described substrate, described substrate rotation, and the speed of described rotation is 4 revs/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310566007.5A CN103643085B (en) | 2013-11-13 | 2013-11-13 | Embed type film resistor material and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310566007.5A CN103643085B (en) | 2013-11-13 | 2013-11-13 | Embed type film resistor material and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103643085A true CN103643085A (en) | 2014-03-19 |
| CN103643085B CN103643085B (en) | 2015-09-30 |
Family
ID=50248365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310566007.5A Active CN103643085B (en) | 2013-11-13 | 2013-11-13 | Embed type film resistor material and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103643085B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104988358A (en) * | 2015-07-22 | 2015-10-21 | 宁波工程学院 | Thin film resistance material and preparation method thereof |
| CN106435478A (en) * | 2016-07-01 | 2017-02-22 | 中国计量大学 | Preparation method of nickel-chromium-silicon film low in resistance temperature coefficient |
| CN116137197A (en) * | 2023-04-20 | 2023-05-19 | 广州方邦电子股份有限公司 | Composite substrate and circuit board |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03124005A (en) * | 1989-10-06 | 1991-05-27 | Matsushita Electric Ind Co Ltd | Superstructure nitride alloy film |
| CN1073547A (en) * | 1991-08-26 | 1993-06-23 | 古尔德公司 | Resistiue metal layers and preparation method thereof |
| US20030035937A1 (en) * | 2001-04-09 | 2003-02-20 | Petkie Ronald R. | Thick film paste systems for circuits on diamond substrates |
| JP2006313785A (en) * | 2005-05-06 | 2006-11-16 | Sumitomo Metal Mining Co Ltd | Thin film resistor and its manufacturing method |
| CN102136473A (en) * | 2010-01-25 | 2011-07-27 | 上海华虹Nec电子有限公司 | Metal film resistor on IC (Integrated Circuit) and manufacture method thereof |
| CN202111940U (en) * | 2011-07-15 | 2012-01-11 | 深圳市星之光实业有限公司 | Embedded type component circuit board |
| CN103184415A (en) * | 2011-12-28 | 2013-07-03 | 深南电路有限公司 | Target material, resistive film, thin-film resistor member, circuit board and manufacturing methods |
-
2013
- 2013-11-13 CN CN201310566007.5A patent/CN103643085B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03124005A (en) * | 1989-10-06 | 1991-05-27 | Matsushita Electric Ind Co Ltd | Superstructure nitride alloy film |
| CN1073547A (en) * | 1991-08-26 | 1993-06-23 | 古尔德公司 | Resistiue metal layers and preparation method thereof |
| US20030035937A1 (en) * | 2001-04-09 | 2003-02-20 | Petkie Ronald R. | Thick film paste systems for circuits on diamond substrates |
| JP2006313785A (en) * | 2005-05-06 | 2006-11-16 | Sumitomo Metal Mining Co Ltd | Thin film resistor and its manufacturing method |
| CN102136473A (en) * | 2010-01-25 | 2011-07-27 | 上海华虹Nec电子有限公司 | Metal film resistor on IC (Integrated Circuit) and manufacture method thereof |
| CN202111940U (en) * | 2011-07-15 | 2012-01-11 | 深圳市星之光实业有限公司 | Embedded type component circuit board |
| CN103184415A (en) * | 2011-12-28 | 2013-07-03 | 深南电路有限公司 | Target material, resistive film, thin-film resistor member, circuit board and manufacturing methods |
Non-Patent Citations (1)
| Title |
|---|
| 张丽娟等: "高稳定Ni-Cr薄膜电阻的研究", 《微处理机》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104988358A (en) * | 2015-07-22 | 2015-10-21 | 宁波工程学院 | Thin film resistance material and preparation method thereof |
| CN106435478A (en) * | 2016-07-01 | 2017-02-22 | 中国计量大学 | Preparation method of nickel-chromium-silicon film low in resistance temperature coefficient |
| CN116137197A (en) * | 2023-04-20 | 2023-05-19 | 广州方邦电子股份有限公司 | Composite substrate and circuit board |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103643085B (en) | 2015-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110055496B (en) | Preparation process for preparing Cr coating on surface of nuclear zirconium alloy substrate | |
| CN103388126B (en) | Low resistance height printing opacity ITO conducting film working method | |
| CN103643085B (en) | Embed type film resistor material and preparation method thereof | |
| CN113584441B (en) | Metal bipolar plate coating and preparation method thereof | |
| CN102159024A (en) | Aluminum base printed circuit board and preparation method thereof | |
| CN105063560A (en) | Method for manufacturing AZO film with electrical resistivity evenly distributed through magnetron sputtering | |
| TW202126132A (en) | Method for manufacturing wiring board, and wiring board | |
| CN102330057B (en) | Method for preparing metal ruthenium film for hard semiconductor component | |
| CN104681208B (en) | A kind of method improving nano silver film electric conductivity | |
| US20120062081A1 (en) | Housing and method for manufacturing housing | |
| CN113667952B (en) | Magnetron sputtering flexible copper-clad substrate and preparation method thereof | |
| CN115044869A (en) | Cr-doped ta-C conductive corrosion-resistant carbon-based film and preparation method and application thereof | |
| CN114822919A (en) | Graphene-metal composite film and manufacturing method thereof | |
| TW202112913A (en) | Polyarylene sulfide resin film, metal layered product, production method for polyarylene sulfide resin film, and production method for metal layered product | |
| CN110079760B (en) | Metal soft magnetic thin film with periodic micro-nano concave-convex structure and preparation thereof | |
| KR20150107684A (en) | Preparation method of transparent conductive substrate | |
| CN104988358A (en) | Thin film resistance material and preparation method thereof | |
| JP2003249132A (en) | Manufacturing method of low resistance transparent conductive film | |
| CN114540767B (en) | Preparation method of flexible aluminum electrode film | |
| Tian et al. | Preparation and properties of silver nanowire-based transparent conductive composite films | |
| CN114107904B (en) | Manufacturing method of structural part, structural part and electronic equipment | |
| JP7519691B2 (en) | Flexible PCB | |
| CN101403096B (en) | Method of producing nano-twin crystal aluminum surface film material with high corrosion resistance | |
| CN113637946B (en) | Preparation method of flexible magnetron sputtering metal nano composite material | |
| CN110767447B (en) | Flexible energy storage film, preparation method thereof and film capacitor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |