JPH02283078A - Light emitting element - Google Patents
Light emitting elementInfo
- Publication number
- JPH02283078A JPH02283078A JP1120964A JP12096489A JPH02283078A JP H02283078 A JPH02283078 A JP H02283078A JP 1120964 A JP1120964 A JP 1120964A JP 12096489 A JP12096489 A JP 12096489A JP H02283078 A JPH02283078 A JP H02283078A
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- substrate
- light emitting
- emitting element
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 66
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000010030 laminating Methods 0.000 claims abstract 3
- 239000010409 thin film Substances 0.000 claims abstract 3
- 238000003475 lamination Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052796 boron Inorganic materials 0.000 abstract description 3
- 239000011574 phosphorus Substances 0.000 abstract description 3
- 239000002075 main ingredient Substances 0.000 abstract 1
- 239000002131 composite material Substances 0.000 description 12
- 239000011521 glass Substances 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 150000001721 carbon Chemical class 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
本発明は光学的バンド中が２．ＯｅＶ以上特に２．６〜
４．５ｅＶを有する炭素または炭素を主成分とする被膜
をガラス、金属またはセラミックの表面にコーティング
することにより、ガラス板の補強材、また機械ストレス
に対する保護材を得んとしている複合体に関する。さら
には少なくとも表面が導電性を示す基板上に上記炭素ま
たは炭素を主成分とするｗｔＭ、さらに電極を形成し、
基板に直角な方向に電圧を印加することにより緑、青等
の光を発する発光素子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides two optical bands in the optical band. OeV or more, especially 2.6~
The present invention relates to a composite material in which a glass, metal, or ceramic surface is coated with carbon or a film mainly composed of carbon having a voltage of 4.5 eV, thereby obtaining a reinforcing material for a glass plate and a protective material against mechanical stress. Further, forming the carbon or wtM containing carbon as a main component, and further electrodes on a substrate whose surface at least exhibits conductivity,
The present invention relates to a light emitting element that emits green, blue, etc. light by applying a voltage in a direction perpendicular to a substrate.
また本発明は基板上に炭素被膜をコーティングし、その
機械的強度を補強しようというものであり特にアセチレ
ン、メタンのような炭化水素気体をプラズマ雰囲気中に
導入し分解せしめることによりＣ−Ｃ結合を作り、結果
としてグラファイトのような導電性または不良導電性の
炭素を作るのではなく、光学的エネルギバンド巾（Ｅｇ
という）が２．ＯｅＶ以上好ましくは２．６〜４ 、５
ｅＶを有するダイヤモンドに類似の絶縁性の炭素を形成
することを特徴としている。さらにこの本発明の炭素は
その硬度も４５００ｋｇ／ｍｍ”以上代表的には６５０
０ｋｇ／ｍｍｚというダイヤモンド類似の硬さを有する
アモルファス（非晶質）または５〜２００人の大きさの
微結晶性を有するセミアモルファス（半非晶質）構造を
有する炭素またはこの炭素中に水素、ハロゲン元素が２
５モル％以下または■価またはＶ価の不純物が５モル％
以下、また珪素がＳｉ／Ｃ≦０．２５の濃度に添加され
たいわゆる炭素を主成分とする炭素（以下本発明におい
ては単に炭素という）を基板上に設けた複合体を設けん
としたものである。In addition, the present invention aims to strengthen the mechanical strength of the substrate by coating a carbon film on the substrate, and in particular, introduces a hydrocarbon gas such as acetylene or methane into the plasma atmosphere and decomposes the C-C bond. rather than creating a carbon that is conductive or poorly conductive, such as graphite, the optical energy band width (Eg
) is 2. OeV or more preferably 2.6 to 4, 5
It is characterized by the formation of insulating carbon similar to diamond with eV. Furthermore, the hardness of the carbon of the present invention is 4,500 kg/mm" or more, typically 650 kg/mm" or more.
Carbon having an amorphous (non-crystalline) structure with a hardness similar to that of diamond of 0 kg/mmz or a semi-amorphous (semi-amorphous) structure with microcrystallinity of 5 to 200 people in size, or hydrogen in this carbon, 2 halogen elements
5 mol% or less, or 5 mol% of impurities with a valence of 2 or a valence of V
Hereinafter, a composite body in which so-called carbon-based carbon (hereinafter simply referred to as carbon in the present invention) with silicon added to a concentration of Si/C≦0.25 is provided on a substrate. It is.
本発明はさらにこの炭素が形成される基板を１５０〜４
５０°Ｃの従来より知られたＣＶＤ法に比べて５００〜
１５００“Ｃも低い温度で形成したことを他の特徴とす
る。The present invention further provides a substrate on which this carbon is formed.
500°C compared to the conventional CVD method at 50°C.
Another feature is that it was formed at a temperature as low as 1500"C.
また本発明はこの炭素に■価の不純物であるホウ素を０
．１〜５モル％の濃度に添加し、Ｐ型の炭素を設け、ま
たＶ価の不純物であるリンを同様に０．１〜５モル％の
濃度に添加し、Ｎ型の炭素を設けることによりこの基板
上面の炭素を導電性にしたことを他の特徴としている。In addition, the present invention eliminates boron, which is a valent impurity, to this carbon.
．． By adding P-type carbon to a concentration of 1 to 5 mol%, and also adding phosphorus, which is a V-valent impurity, to a concentration of 0.1 to 5 mol% to provide N-type carbon. Another feature is that the carbon on the top surface of the substrate is made conductive.
さらに本発明はこの基板上にＰＩＮ接合またはＮＩＰ接
合を有する炭素を設けることにより、ダイオード特性を
有する半導体的特性を有せしめることを特徴としている
。Furthermore, the present invention is characterized in that by providing carbon having a PIN junction or NIP junction on this substrate, semiconductor characteristics having diode characteristics are imparted.
さらに本発明は広いエネルギーバンド中を有するＰ型、
Ｎ型の炭素半導体の間にこれらに比較してせまいエネル
ギーバンド中を有するＩ、Ｎ、またはＰ型の炭素半導体
を介在させ、ＰＩＮ接合またはＰＮＮＳＰＰＮ接合を作
り、そのエネルギーバンド（厚さの関数でもある。）の
巾に従って決められた光を電子、ホールの再結合により
発光せしめることを特徴としている。Furthermore, the present invention provides P-type, which has a wide energy band,
An I-, N-, or P-type carbon semiconductor having a narrower energy band is interposed between the N-type carbon semiconductors to create a PIN junction or a PNNSPPN junction, and the energy band (also a function of thickness) It is characterized by emitting light determined according to the width of the beam by recombining electrons and holes.
また本発明は基板特にガラスまたはセラミック基板上に
設け、その後この基板を選択的に除去してインクジェッ
トノズル、光通信用石英ガラスの引出し用ノズルとして
設けること、またガラス基板上に選択的に設け、電子ビ
ーム露光装置または紫外線の露光装置のフォトマスクと
して用いることを他の特徴としている。さらに本発明の
複合体はバルブ、耐摩耗材料、ＰＩＮ型を有する半導体
としての装置例えば受光または発光素子へも応用が可能
である。The present invention also provides a method of providing a substrate on a substrate, particularly a glass or ceramic substrate, and then selectively removing this substrate to provide an inkjet nozzle or a nozzle for drawing out quartz glass for optical communication, and selectively providing on a glass substrate, Another feature is that it can be used as a photomask for an electron beam exposure device or an ultraviolet exposure device. Further, the composite of the present invention can be applied to valves, wear-resistant materials, and devices as semiconductors having a PIN type, such as light receiving or light emitting elements.
以下に図面に従って本発明に用いられた複合体またはそ
の複合体の作製方法を記す。The composite used in the present invention and the method for producing the composite will be described below according to the drawings.
実施例１
第１図は本発明の炭素を形成するためのプラズマＣＶＯ
装置の概要を示す。Example 1 Figure 1 shows plasma CVO for forming carbon according to the present invention.
An overview of the device is shown.
図面において反応性気体である炭化水素気体、例えばア
セチレンが（８）よりバルブ、流量計（５）をへて反応
系中の励起室（４）に導入される。さらに必要に応じて
、キャリアガスを水素またはへリュームにより（７）よ
りバルブ、流量計（６）をへて同様に励起室に至る。こ
こに■価またはＶ価の不純物、例えばジボランまたはフ
ォスヒンを導入する場合はさらに同様にこの系に加えれ
ば良い。In the drawing, a hydrocarbon gas, such as acetylene, which is a reactive gas, is introduced from (8) through a valve and a flow meter (5) into an excitation chamber (4) in the reaction system. Furthermore, if necessary, the carrier gas is supplied with hydrogen or helium (7) through a valve and a flow meter (6), and similarly reaches the excitation chamber. If a valent or V-valent impurity, such as diborane or phosphin, is to be introduced here, it may be added to the system in the same manner.
これらの反応性気体は２．４５ＧＩＩｚのマイクロ波に
よる電磁エネルギにより０．１〜５ｋｗのエネルギを加
えられ、励起室にて活性化、分解または反応させられる
。さらにこの反応性気体は反応炉（１）にて加熱炉（９
）により１５０〜４５０°Ｃに加熱させ、さらに１３．
５６ＭＩＩｚの高周波エネルギ（２）により反応、重合
され、Ｃ−Ｃ結合を多数形成した炭素を生成する。この
際、加える電磁エネルギを強くした場合は５〜２００人
の大きさのダイヤモンド形状の微結晶性を有する炭素を
形成させうる。しかし、この電磁エネルギが小さい場合
は、アモルファス構造のみとなってしまった。この反応
の際、電源（１３）によりヒータ（１１）を加熱し、さ
らにその上の基板（１０）を加熱して行う。そしてこの
基板の上面に被膜として反応生成物の炭素被膜が形成さ
れる。反応後の不要物は排気口（１２）よりロータリー
ポンプを経て排気される。反応室（１）は０．００１〜
１０ｔｏｒｒ代表的には０．１〜０．５ｔｏｒｒに保持
されており、マイクロ波（３）および高周波（２）のエ
ネルギにより反応室（１）内はプラズマ状態が生成され
る。特にＩＧＨｚ以上の周波数にあっては、Ｃ−Ｈ結合
より水素を分離し、０．１〜５０ Ｍ Ｉ’ｚの周波数
にあってはＣミＣ結合、ｃ＝ｃ結合を分解し、＞Ｃ−Ｃ
り結合または−Ｃ−Ｃ−結合を作り、炭素の不対結合手
同志を互いに衝突させて共有結合させ、安定なダイヤモ
ンド構造を有せしめた。These reactive gases are activated, decomposed or reacted in an excitation chamber by applying 0.1 to 5 kW of electromagnetic energy using microwaves of 2.45 GIIz. Furthermore, this reactive gas is heated in a heating furnace (9) in a reactor (1).
) to 150-450°C, and further 13.
It is reacted and polymerized by the high frequency energy (2) of 56MIIz to produce carbon having a large number of C--C bonds. At this time, if the applied electromagnetic energy is strong, diamond-shaped microcrystalline carbon having a size of 5 to 200 people can be formed. However, when this electromagnetic energy is small, only an amorphous structure results. During this reaction, the heater (11) is heated by the power source (13), and the substrate (10) thereon is further heated. Then, a carbon film of the reaction product is formed as a film on the upper surface of this substrate. Unwanted substances after the reaction are exhausted from the exhaust port (12) via a rotary pump. Reaction chamber (1) is 0.001~
10 torr is typically maintained at 0.1 to 0.5 torr, and a plasma state is generated in the reaction chamber (1) by the energy of microwaves (3) and high frequency waves (2). In particular, at frequencies above IGHz, hydrogen is separated from C-H bonds, and at frequencies of 0.1 to 50 M I'z, CmiC bonds and c=c bonds are decomposed, and >C -C
A stable diamond structure was created by creating a bond or a -C-C- bond, and causing the unpaired carbon bonds to collide with each other to form a covalent bond.
かくして、金属、セラミックスよりなる被形成面を有す
る基体上特にノズルの内面に炭素特に炭素中に水素を２
５モル％以下含有する炭素またＰ、■またはＮ型の導電
型を有する炭素を形成させた。In this way, carbon, especially hydrogen in carbon, is added to the substrate having a surface made of metal or ceramics, especially on the inner surface of the nozzle.
Carbon containing 5 mol % or less or carbon having P, ■ or N type conductivity was formed.
実施例２
第２図は実施例１に示される方法で形成される炭素を用
いた本発明の発光素子の実施例を示す。Example 2 FIG. 2 shows an example of a light emitting device of the present invention using carbon formed by the method shown in Example 1.
すなわち基板（２０）上にＰＩＮ接合またはＮＩＰ接合
を有する炭素を設けたものである。すなわちＰまたはＮ
型の炭素半導体（２５）、■型の炭素、ＮまたはＰ型の
炭素半導体（２７）よりなる炭素（２４）である。That is, carbon having a PIN junction or NIP junction is provided on the substrate (20). i.e. P or N
The carbon (24) is a type carbon semiconductor (25), a type carbon, and an N or P type carbon semiconductor (27).
このＰまたはＮ型の炭素は０．０１〜５％例えば１〜３
％の濃度にホウ素またはリンを添加した。これは（２８
）の部分にリフトオフ用の材料を選択的に設け、全面に
形成した後リフトオフを第４図に如くにして得たもので
ある。全面に形成してもまたはＰＮ接合またはその他の
構造をたてまたは接合面に設けても良い。This P or N type carbon is 0.01 to 5%, for example 1 to 3
Boron or phosphorus was added to a concentration of %. This is (28
A material for lift-off was selectively provided in the portion ), and after forming the lift-off material on the entire surface, the lift-off was obtained as shown in FIG. It may be formed on the entire surface or a PN junction or other structure may be provided vertically or on the joint surface.
この半導体のうち（２６）のエネルギバンドｌ】は他の
炭素（２５） 、 （２７）に比べて小さく、珪素また
はゲルマニュームを添加して形成し、ここに電極（２９
）を設け、たて方向に電流を基板との間に流すことによ
り炭素の発光素子を基板上に集積化して設けることがで
きた。かかる発光素子とする複合体にあっては、基板は
ステンレス等の導体であることが必要である。この場合
層（２５） 、 （２７）はエネルギバンド巾が２．６
〜４．５ｅＶであり、また層（２７）は２〜３ｅＶとす
ることによって緑、青等の色の発光素子を基板上に設け
ることができた。Of this semiconductor, the energy band l] of (26) is smaller than that of other carbons (25) and (27), and it is formed by adding silicon or germanium, and the electrode (29) is formed by adding silicon or germanium.
), and by passing a current between the substrate and the substrate in the vertical direction, carbon light emitting elements could be integrated and provided on the substrate. In such a composite body as a light emitting element, the substrate needs to be made of a conductor such as stainless steel. In this case, layers (25) and (27) have an energy band width of 2.6
~4.5 eV, and by setting the layer (27) to 2 to 3 eV, light emitting elements of colors such as green and blue could be provided on the substrate.
実施例３
第３図（八）は第１図の製造装置により作られた複合体
の１例である。第３図（Ａ）はガラスの上にＰまたはＮ
型の導電型を有する炭素膜を形成させた。この炭素は１
０−ｓ〜１０４（Ωｃｍ）−’を有し、自動車の内表面
に設け、ここに電流を０．０１〜ＩＡ流すことにより発
熱せしめ、雨等の環境によるくもり止めを実施せしめた
。Example 3 FIG. 3 (8) is an example of a composite made by the manufacturing apparatus shown in FIG. 1. Figure 3 (A) shows P or N on the glass.
A carbon film having the same conductivity type was formed. This carbon is 1
It has a resistance of 0-s to 104 (Ωcm)-' and is provided on the inner surface of an automobile, and a current of 0.01 to IA is passed through it to generate heat, thereby preventing fogging caused by environments such as rain.
これは自動車のみならず、多くの分野においてその応用
が可能である。This can be applied not only to automobiles but also to many other fields.
実施例４
第３図（Ｂ）は実施例１を用いた本発明の方法によるも
ので、この炭素（２２）を表面全面に形成したものであ
る。これは板状のみならず任意の形状を有せしめ得る基
板または基体（２０）を有する複合体である。これは切
削機に歯、耐摩耗性表面を有せしめる金属、セラミンク
の表面に設けたものである。Example 4 FIG. 3(B) shows the method of the present invention using Example 1, in which carbon (22) is formed on the entire surface. This is a composite body having a substrate or base body (20) which can have any shape, not just a plate shape. This is provided on the surface of the teeth of a cutting machine, a metal that provides a wear-resistant surface, and ceramics.
実施例５
第３図（Ｃ）は実施例１の作製方法によって得られた炭
素を用いた複合体の例である。すなわち円錐状の穴が開
けられた非形成面を有するセラミックまたは金属の基板
の表面に炭素（２３）を０．１〜３μｍの厚さに設けで
ある。穴（２２） 、 （２３”）はインクジェットま
たは光通信用の石英のぼうすいジグとする場合、その大
きさは０．０５〜５μｍの大きさを有し、かつこの穴が
耐摩耗性を必要とするため、かかる複合体はきわめて好
都合であった。この炭素をコーティングしないものに比
べて、１０”〜１０４倍もの耐久性を有していた。Example 5 FIG. 3(C) is an example of a composite using carbon obtained by the manufacturing method of Example 1. That is, carbon (23) is provided to a thickness of 0.1 to 3 μm on the surface of a ceramic or metal substrate having a non-forming surface with conical holes. When the holes (22) and (23") are used as a quartz dimple jig for inkjet or optical communication, the size thereof should be 0.05 to 5 μm, and the holes should be wear resistant. Such composites were extremely advantageous in that they were 10" to 104 times more durable than those without the carbon coating.
実施例６
第４図はフォトマスクを設けた場合の構造である。すな
わち第４図（Ａ）においては、ガラス特に石英ガラス（
２０）上に選択的にエツチングして被膜（２９）を設け
、この上面に炭素被膜を０．１〜１μｍの厚さに実施例
１の方法で形成した。この後リフトオフを行うことによ
り、選択的に炭素被膜（２１）層を設けた。これは超Ｌ
ＳＩ等の半導体用のマスクとしてきわめてすぐれたもの
であり、電子ビームまたあちょう紫外光に対してマスク
効果を有するとともに、耐摩耗性にすぐれており、また
半永久的に使用が可能である。Embodiment 6 FIG. 4 shows a structure in which a photomask is provided. That is, in FIG. 4(A), glass, especially quartz glass (
20) A film (29) was selectively etched on the top surface, and a carbon film with a thickness of 0.1 to 1 μm was formed on the top surface by the method of Example 1. Thereafter, by performing lift-off, a carbon film (21) layer was selectively provided. This is super L
It is an excellent mask for semiconductors such as SI, has a masking effect against electron beams and ultraviolet light, has excellent abrasion resistance, and can be used semi-permanently.
マスクの作製方法として多少の色調をつけるため、着色
用不純物が添加された炭素のこの被膜に対しては、他の
製造方法を用いることもできる。Other manufacturing methods can also be used for this coating of carbon doped with coloring impurities to provide some color toning as a mask manufacturing method.
すなわち基板上全面に設けられた炭素に対し酸化物雰囲
気中にてレーザ光を選択的にコンビューク制御により行
い、不要の部分の炭素を酸化して炭酸ガスとして放出し
てしまい、結果として第４図（Ｂ）の如きマスクを作る
ことができた。In other words, a laser beam is selectively applied to the carbon provided on the entire surface of the substrate in an oxide atmosphere using Conbuque control, and the unnecessary carbon is oxidized and released as carbon dioxide gas. As a result, as shown in Figure 4. I was able to make a mask like (B).
このレーザ光による選択エツチングは実施例２〜５に対
しても、その工業的応用に関して任意に用いることがで
きる。This selective etching using laser light can also be used in Examples 2 to 5 as desired for industrial applications.
以上の説明より明らかな如く、本発明はガラス金属また
はセラミックの表面または内部に炭素または炭素を主成
分とした被膜をコーティングして設けたものである。こ
の複合体を他の多くの実施例にみられる如きその応用は
計りしれないものであり、特にこの炭素が４５０°Ｃ以
下の低温で形成できるのに対し、その硬度また基板に対
する密着性がきわめてすぐれているのが特徴である。As is clear from the above description, the present invention provides a coating of carbon or a film mainly composed of carbon on the surface or inside of a glass metal or ceramic. The applications of this composite as seen in many other examples are immeasurable, especially since this carbon can be formed at low temperatures below 450°C, and its hardness and adhesion to substrates are extremely high. It is characterized by its excellence.
本発明におけるセラミックは、アルミナ、ジルコニアま
たはそれらの炭素、ランタン等の希土類が添加された任
意の材料を基板とすることができる。また金属にあって
はステンレス、モリブデン、タングステン等の少なくと
も３００〜４５０°Ｃの温度に耐えられる材料ならばす
べてに応用可能である。またガラスは石英のみならずソ
ーダガラス等に対しても被膜化可能であり、その応用は
究めて広い。The substrate of the ceramic in the present invention may be alumina, zirconia, or any material to which rare earth elements such as carbon and lanthanum are added. Furthermore, as for metals, it is applicable to all materials that can withstand temperatures of at least 300 to 450°C, such as stainless steel, molybdenum, and tungsten. Moreover, glass can be coated not only on quartz but also on soda glass, etc., and its applications are extremely wide.
第１図は本発明の炭素を被形成面上に作製する製造装置
の概要を示す。
第２図は本発明の発光素子の例を示す。
第３図（Ａ）〜（Ｃ）および第４図（Ａ）及び（Ｂ）は
本発明の複合体の実施例を示す。FIG. 1 shows an outline of a manufacturing apparatus for manufacturing carbon of the present invention on a surface to be formed. FIG. 2 shows an example of a light emitting device of the present invention. Figures 3(A)-(C) and Figures 4(A) and (B) show examples of composites of the present invention.
Claims (1)
は炭素を主成分とする薄膜と電極とを積層し、積層方向
に電圧を印加することにより、緑、青等の光を発するこ
とを特徴とする発光素子。 ２、特許請求の範囲第１項において、炭素または炭素を
主成分とする薄膜は、Ｐ型の導電性を有する層と、Ｉ型
の導電性を有する層と、Ｎ型の導電性を有する層を積層
したことを特徴とする発光素子。[Claims] 1. By laminating carbon or a thin film mainly composed of carbon and an electrode on a substrate whose surface is electrically conductive, and applying a voltage in the lamination direction, green, blue, etc. A light emitting element characterized by emitting. 2. In claim 1, carbon or a thin film mainly composed of carbon includes a layer having P-type conductivity, a layer having I-type conductivity, and a layer having N-type conductivity. A light-emitting element characterized by laminating layers of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1120964A JPH02283078A (en) | 1989-05-15 | 1989-05-15 | Light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1120964A JPH02283078A (en) | 1989-05-15 | 1989-05-15 | Light emitting element |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56146930A Division JPS5848428A (en) | 1981-09-17 | 1981-09-17 | Compound material having carbon film and manufacture therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02283078A true JPH02283078A (en) | 1990-11-20 |
Family
ID=14799365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1120964A Pending JPH02283078A (en) | 1989-05-15 | 1989-05-15 | Light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02283078A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5578524A (en) * | 1978-12-10 | 1980-06-13 | Shunpei Yamazaki | Manufacture of semiconductor device |
-
1989
- 1989-05-15 JP JP1120964A patent/JPH02283078A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5578524A (en) * | 1978-12-10 | 1980-06-13 | Shunpei Yamazaki | Manufacture of semiconductor device |
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