JPH022519A - Production of liquid crystal display element - Google Patents
Production of liquid crystal display elementInfo
- Publication number
- JPH022519A JPH022519A JP14905188A JP14905188A JPH022519A JP H022519 A JPH022519 A JP H022519A JP 14905188 A JP14905188 A JP 14905188A JP 14905188 A JP14905188 A JP 14905188A JP H022519 A JPH022519 A JP H022519A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- soln
- transparent conductive
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000011521 glass Substances 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000000206 photolithography Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 14
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 abstract description 15
- 238000005530 etching Methods 0.000 abstract description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 5
- 239000011733 molybdenum Substances 0.000 abstract description 5
- 235000011118 potassium hydroxide Nutrition 0.000 abstract description 5
- 238000007654 immersion Methods 0.000 abstract description 2
- 238000005406 washing Methods 0.000 abstract description 2
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 abstract 1
- MMVYPOCJESWGTC-UHFFFAOYSA-N Molybdenum(2+) Chemical compound [Mo+2] MMVYPOCJESWGTC-UHFFFAOYSA-N 0.000 abstract 1
- LXFUCSMCVAEMCD-UHFFFAOYSA-N acetic acid;nitric acid;phosphoric acid Chemical compound CC(O)=O.O[N+]([O-])=O.OP(O)(O)=O LXFUCSMCVAEMCD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Natural products CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- IZQZNLBFNMTRMF-UHFFFAOYSA-N acetic acid;phosphoric acid Chemical compound CC(O)=O.OP(O)(O)=O IZQZNLBFNMTRMF-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- ZYCMDWDFIQDPLP-UHFFFAOYSA-N hbr bromine Chemical compound Br.Br ZYCMDWDFIQDPLP-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
この発明は、液晶表示素子の製造方法に関し、特に透明
導電膜と金属補助電極膜を積層した電極パターンを形成
するフォトプロセスに関するものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a method for manufacturing a liquid crystal display element, and particularly to a photo process for forming an electrode pattern in which a transparent conductive film and a metal auxiliary electrode film are laminated.
〈従来の技術〉
心ノ
近年、ドツトマトリックス型液晶表示素子よる大容量の
フラット型情報表示装置が注目されている。ドットマ）
ＩＪフックス絵素数の増加に伴い、各ドラトラ構成す
る電極ストライプの抵抗値が問題になってきている。ガ
ラス基板上に構成されるＩ Ｔｏ （Ｉ ｎ２０３ ＋
Ｓ ｎ０２）等の透明導電膜の抵抗値（液晶表示素子
に用いる場合、およそ１０Ω〜３００Ω／口の値である
）を小さくするだめこの透明導電膜の上に細い金属の補
助電顆膜を積層して電極ストライプの抵抗値を下げる技
術が用いられるようになってきた。<Prior Art> In recent years, large-capacity flat information display devices using dot matrix type liquid crystal display elements have attracted attention. dotma)
As the number of IJ Fuchs picture elements increases, the resistance value of the electrode stripes constituting each dolatator is becoming a problem. I To (I n203 +
In order to reduce the resistance value of a transparent conductive film such as S n02 (approximately 10Ω to 300Ω/gate when used in a liquid crystal display element), a thin metal auxiliary conductive film is laminated on top of this transparent conductive film. Techniques for reducing the resistance of electrode stripes have come into use.
第３図、第４図および第５図は、それぞ几従来の液晶表
示素子に用いらｎる積層電画の製造方法を説明する工程
図である。FIGS. 3, 4, and 5 are process diagrams illustrating a method of manufacturing a laminated electrolyte used in a conventional liquid crystal display device.
第３図（Ａ）でガラス基板１１の上に金属薄膜１２を形
成し、同（Ｂ）に示″′ｒｔｌＵＪ＜この上にフォトレ
ジスト＋ｉ １４ ｆｊｒ：塗布しフォトマスク１５を
用いて露光・現像する。同（Ｃ）は金属膜をパターンエ
ツチングし金属薄膜Ｍ線の補助電層パターン１２′ 全
形成する工程全示す。同（Ｄ）はパターンの形成された
基板上に透明導電膜１３を形成する工程を示す。同（Ｅ
）はフォトプロセス工程で、フォトレジスト＋＋ｕ １
６ ＠コートし、フォトマスク１７′ｆｒ：用いて露光
・現像する。同（Ｆ）は透明導電膜１３のパもターン１
３′全形成する工程を示す。この場合、透明導電膜１３
のパターン１３′は金属細線の補助電極パターン１２′
をオーバーコートする構成となっている。In FIG. 3(A), a metal thin film 12 is formed on the glass substrate 11, and as shown in FIG. (C) shows the entire process of pattern etching the metal film to form the auxiliary conductive layer pattern 12' of the metal thin film M-line. (D) shows the process of forming the transparent conductive film 13 on the patterned substrate. The same (E
) is a photo process step, photoresist ++ u 1
6@coat, expose and develop using photomask 17'fr:. The pattern (F) of the transparent conductive film 13 is also pattern 1.
3' shows the process of complete formation. In this case, the transparent conductive film 13
The pattern 13' is the auxiliary electrode pattern 12' of thin metal wire.
It is configured to overcoat the
第４肉は同様なプロセスでガラス／透明電擺／金属■１
線電樺から成る構成の電極パターンを作るものである。The fourth material is made of glass/transparent electric cloth/metal ■1 using the same process.
This is to create an electrode pattern consisting of electric wire.
第４図（Ａ）はガラス基板１１の上に透明導電膜１３を
形成する工程であり、同（Ｂ）はこの上にフォトレジス
ト膜１４を塗布しフォトマスク１７全用いて露光・現象
する工程である。同（Ｃ）は透明導７は膜をパターンエ
ツチングし透明電極パターン１３′を形成する工程であ
る。同（Ｄ）はその基板上に金属薄膜１２を形成する工
程である。同（Ｅ）はフォトプロセス工程で、フォトレ
ジスト膜１６をコートし、フォトマスク１５を用いて露
光・現像する。同（Ｆ）は金属薄膜の補助電極パターン
１２′を形成する工程を示す。この場合、金属細線の補
助重版パターン１２′は透明導電膜の上に積層された１
１″４成となっている。FIG. 4(A) shows a step of forming a transparent conductive film 13 on a glass substrate 11, and FIG. 4(B) shows a step of applying a photoresist film 14 thereon and exposing it to light using a photomask 17. It is. (C) is a step of pattern-etching the transparent electrode 7 film to form a transparent electrode pattern 13'. Step (D) is a step of forming a metal thin film 12 on the substrate. (E) is a photo process step in which a photoresist film 16 is coated, exposed and developed using a photomask 15. (F) shows a step of forming an auxiliary electrode pattern 12' of a metal thin film. In this case, the auxiliary overprint pattern 12' of the thin metal wire is the layered pattern 12' on the transparent conductive film.
It is 1″ and 4 pieces.
第５図は、第４図と同じく、ガラス／透明＠極／金属薄
膜の積層構造を有する電極パターンを作るものである。In FIG. 5, like FIG. 4, an electrode pattern having a laminated structure of glass/transparent@electrode/metal thin film is made.
第５図（Ａ）でガラス基板１１の上に透明導電膜１３お
よび金属薄膜１２を形成し、同（Ｂ）でこの上にフォト
レジスト膜１４を塗布しフォトマスク１５に用いて１回
目の露光・現像をする。次に同（Ｃ）で金属薄膜１２全
パターンエツチングし金属補助電極パターン１２′ を
形成する。In FIG. 5(A), a transparent conductive film 13 and a metal thin film 12 are formed on a glass substrate 11, and in FIG. 5(B), a photoresist film 14 is applied thereon and used as a photomask 15 for first exposure.・Develop. Next, in the same step (C), the entire pattern of the metal thin film 12 is etched to form a metal auxiliary electrode pattern 12'.
同（Ｄ）はこの上に再度フォトレジスト１漢１４を塗布
しフォトマスク１７を用いて２回目の露光・現象をする
工程を示す。同（Ｅ）は透明導電膜をパターンエツチン
グし透明電極パターン１３”ｅ形成する工程を示す。こ
の場合、金属＃Ｉ線の補助重鎖パターン１２′は透明導
電膜の電極パターン１３′の上に積層された構成となっ
ており２回のフォトプロセスが必要となる。(D) shows the process of applying photoresist 14 again on this and performing a second exposure and phenomenon using a photomask 17. (E) shows the step of pattern etching the transparent conductive film to form the transparent electrode pattern 13''e. In this case, the auxiliary heavy chain pattern 12' of the metal #I line is placed on the electrode pattern 13' of the transparent conductive film. It has a stacked structure and requires two photo processes.
〈発明が解決しようとする課題〉
前述の製造工程において、ガラス基板上の透明導電膜と
金属薄膜のパターン形状が同一の場合であっでも２回の
フォトプロセスが用いられ、ｔた高い精度を必要としな
い液晶表示素子の非表示部分のパターン形状の場合であ
っても２回のフォトプロセスが用いられていた。その結
果、ハターン精度を向上させることが困難である。<Problem to be solved by the invention> In the manufacturing process described above, even if the pattern shapes of the transparent conductive film on the glass substrate and the metal thin film are the same, two photo processes are used, which requires a high degree of precision. Even in the case of a pattern shape of a non-display part of a liquid crystal display element, two photo processes were used. As a result, it is difficult to improve the pattern accuracy.
く課題全解決するだめの手段〉
本発明は上述のような点に鑑みてなされたもので、透明
導電膜と金属補助電顕のフォトリングラフィを１回のプ
ロセスで行い、２層に積層された宙曙膜の位置ずれ金な
くシ、精度の高いかつ生産性の優れた液晶表示素子の製
造プロセスを提供することを目的とするものである。The present invention has been made in view of the above-mentioned points, and involves performing photophosphorography of a transparent conductive film and metal-assisted electron microscopy in one process, and stacking two layers. It is an object of the present invention to provide a process for manufacturing a liquid crystal display element with high precision and excellent productivity without any displacement of the suspended film.
即ち、本発明は液晶用ガラス基板上に形成される透明導
電膜電極／金属薄１模補助電極の２層溝造のパターン形
状の形成プロセスにおいて、金属薄ｊ漠のエツチング溶
液にリン酸−酢酸−硝酸を主体とするエンチング液を採
用し、さらにフォトレジスト膜の処理方法を改良するこ
とにより、１回のフォトレジス！−１１ｊｉｌｌの塗布
で、２回の露光・現像処理音引き続いて行なう製造方法
である。That is, in the process of forming a two-layer groove pattern of a transparent conductive film electrode/a thin metal auxiliary electrode formed on a glass substrate for liquid crystal, the present invention involves adding phosphoric acid-acetic acid to an etching solution for a thin metal layer. - By using an etching solution mainly composed of nitric acid and improving the photoresist film processing method, one-time photoresist processing is possible! - This is a manufacturing method in which 11 jill is applied, followed by two exposure and development processes.
〈作 用〉
上述の工程プロセスにより、１回のフォトプロセスで、
精度が高くかつ生産性の高い２層の積層型パターン形状
が得られる。〈Operation〉 Through the above process, one photo process,
A two-layer laminated pattern shape with high precision and high productivity can be obtained.
〈実施例〉 以下図面に従って本発明の一実施例を説明する。<Example> An embodiment of the present invention will be described below with reference to the drawings.
第１図は、本発明の一実施例による液晶表示素子のガラ
スパターン基板の製造プロセスを示す図である。ｇ１図
（Ａ）は透明導電、１模および金属膜の形成、同（Ｂ）
はフォトプロセス、同（Ｃ）は透明導電１摸のパターン
形成、同ＣＤ）はフォトプロセス、同（Ｅ）は金属膜の
パターン形成の各工程を示す。FIG. 1 is a diagram showing a manufacturing process of a glass pattern substrate for a liquid crystal display element according to an embodiment of the present invention. g1 Figure (A) is transparent conductive, 1 pattern and formation of metal film, same (B)
(C) shows the pattern formation of a transparent conductor, (CD) shows the photo process, and (E) shows the pattern formation of the metal film.
以下各工程の手順について詳細に説明する。The procedure of each step will be explained in detail below.
「Ａ工程」：洗浄したガラス基板１の上に酸化インジウ
ム（Ｉｎ２０：＋）９５％、酸化スズ（Ｓｎ０２ ）５
形の混合酸化物のターゲラトラ用い、スパッター法によ
り膜厚約１００ＯＡの薄膜全堆積させ、シート抵抗約３
０Ω／口の透明導電膜（ＩＴＯ）２全形成する。次にこ
の禮明導電嘆２の上にモリブデン（Ｍｏ）のターゲット
を用い、スパッター法により膜厚的３００ＯＡ、シート
抵抗値約０．５Ω／口のモリブデン金属薄膜を形成する
。"A process": On the cleaned glass substrate 1, indium oxide (In20:+) 95%, tin oxide (Sn02) 5
A thin film with a thickness of about 100 OA was deposited by sputtering using a target layer of mixed oxide of the shape, and the sheet resistance was about 3.
A transparent conductive film (ITO) 2 of 0Ω/hole is completely formed. Next, a molybdenum metal thin film having a film thickness of 300 OA and a sheet resistance of about 0.5 Ω/hole is formed on this conductive layer 2 by sputtering using a molybdenum (Mo) target.
「Ｂ工程」：形成された２層の導電膜上にポジ型フォト
レジスト（−例として東京応化（株）の商品名０ＦＰＲ
−８００）膜０．５〜４．０μ霞厚をコーティングし、
１００℃３０分のボストベークを行い、レジスト＠ヲ強
くする。次に線幅１００μｍ。"B process": Positive photoresist (for example, Tokyo Ohka Co., Ltd.'s product name 0FPR) is applied on the formed two-layer conductive film.
-800) coating film 0.5-4.0μ haze thickness,
Bost bake at 100°C for 30 minutes to strengthen the resist. Next, the line width is 100 μm.
線間距離１０μｍのフォトマスクパターン５を介して露
光する。Exposure is performed through a photomask pattern 5 with a line-to-line distance of 10 μm.
［Ｃ工程Ｊ：０．１〜１．５％の苛性カリＫＯＨ溶液で
数分間現像処理する。（苛性ソーダ溶液を用いる場合も
ある。）現像後、モリブデン膜のエツチング液として［
濃リン酸（６０〜１００％）硝酸（０，１〜５％）−酢
酸（１〜１５％）−界面活性剤（場合により添加する）
の混合溶液を用い、透明導電膜（ＩＴＯ）のエツチング
液として濃臭化水素酸（ＨＢｒ）溶液を用いてそれぞれ
約３分間づつ室温で浸漬エツチングを行う。[C Step J: Develop for several minutes with a 0.1-1.5% caustic potassium KOH solution. (A caustic soda solution may be used.) After development, use [ as an etching solution for the molybdenum film].
Concentrated phosphoric acid (60-100%) Nitric acid (0.1-5%) - Acetic acid (1-15%) - Surfactant (added if necessary)
Immersion etching is performed at room temperature for about 3 minutes each using a concentrated hydrobromic acid (HBr) solution as an etching solution for the transparent conductive film (ITO).
「Ｄ工程」：水洗洗浄の後、非表示部がマスクされ、か
つ表示部のみ線幅的１０μｍ、線間距離的ｉｏｏμｍで
形成されているフォトマスクパターン（第２図参照）全
用い、再度露光現像処理およびモリブデン膜のエツチン
グ液として「濃リン酸（６０〜１００Φ）−硝酸（０，
１〜５％）−酢酸（１〜１５％）−界面活性剤（場合に
より添加する）の混合溶液を用いてモリブデン膜のエツ
チングを行う。"D process": After washing with water, the non-display area is masked, and only the display area is formed with a line width of 10 μm and a distance between lines of ioo μm.The entire photomask pattern (see Figure 2) is used and exposed again. Concentrated phosphoric acid (60-100Φ) - nitric acid (0,
The molybdenum film is etched using a mixed solution of 1-5%)-acetic acid (1-15%)-surfactant (added if necessary).
「Ｅ工程」：その後、１〜１０％の苛性カリ（ＫＯＨ）
水溶液でレジスト摸４を剥離すると、表示部はＩＴＯの
線幅的１００ μｍ （６）、Ｍｏの線幅的１０μｒｒ
Ｌ（７）、非表示部はＩＴＯ層（８）とＭｏ層（９）と
が積層さｎた線間距離的１０μｍαのの液晶表示素子用
の電極パターンが形成される。"E process": Then 1-10% caustic potash (KOH)
When the resist sample 4 is peeled off with an aqueous solution, the display area has a line width of 100 μm for ITO (6) and a line width of 10 μrr for Mo.
In the non-display area L(7), an electrode pattern for a liquid crystal display element is formed by laminating an ITO layer (8) and a Mo layer (9) with a line-to-line distance of 10 μmα.
これ全第２図に示す。非表示部の幅は約８ｍｍである。This is all shown in Figure 2. The width of the non-display portion is approximately 8 mm.
１回のフォトリソグラフィーによるパターン誤差をΔＸ
とすると、従来の方法による２回のフォトリソグラフィ
ーによるパターン誤差は加算されて２・ΔＸとなり、パ
ターン間隔の誤差Δｙ≧２・ΔＸとなる。本実施例によ
る１回のフォトリングラフイーでは、Δｙ≧ΔＸとなり
、パターン間隔の誤差を半分（１／２ ）にすることが
でき、また１回のフィトレジスト塗布に２回のパターン
露光を用いることができ、プロセスの簡素化と製造工程
での材料使用量の低減が可能となった。また透明導電膜
と金属薄膜電極との位置ずれ全減少でき、この金属薄膜
補助電極を設計通りの位置に形成することができ、その
結果として、液晶表示素子の表示品位を向上させること
ができた。The pattern error due to one photolithography process is ΔX
Then, the pattern errors caused by two photolithography processes using the conventional method are added up to 2·ΔX, and the pattern interval error Δy≧2·ΔX. In one photolithography according to this embodiment, Δy≧ΔX, the error in pattern spacing can be halved (1/2), and two pattern exposures are used for one phytoresist application. This has made it possible to simplify the process and reduce the amount of materials used in the manufacturing process. In addition, the misalignment between the transparent conductive film and the metal thin film electrode can be completely reduced, and the metal thin film auxiliary electrode can be formed in the designed position, and as a result, the display quality of the liquid crystal display element can be improved. .
〈発明の効果〉
以上のように本発明によルば、液晶表示用の電極パター
ンの形成プロセスを簡略化でき、かつ精度の高いパター
ン形成方法が提供できる。<Effects of the Invention> As described above, according to the present invention, it is possible to simplify the process of forming an electrode pattern for a liquid crystal display, and to provide a highly accurate pattern forming method.
第１図（Ａ）〜（Ｅ）は本発明の一実施例を示す工程プ
ロセスの断面図、第２図は本発明の一実施例により作製
さｎた液晶表示素子用電極パターンの平面図、第３図（
Ａ）〜（Ｆ）、第４図（Ａ）〜（Ｆ）および第５図（Ａ
）〜（Ｅ）は従来例による液晶表示素子用電極パターン
の工程プロセスを示す断面図である。
１・・ガラス基板、 ２・・・透明導電膜、 ２′・・
・透明導電膜電極パターン、 ３・・・モリブデン金属
薄膜、 ３′・・・金属膜電極パターン、 ４・・・レ
ジスト膜、 ５・・・フォトマスク
代理人 弁理士 杉 山 毅 至（他１名）彰べ
（Ａ）
第１ 図
嘉３図
、ｌ２
（８，ｑ
ス２図
（Ａ）
φナナ
ψψ１１
ノぐ７−ン彬Ａ
（Ｃ）
第４
図1A to 1E are cross-sectional views of a process showing an embodiment of the present invention, and FIG. 2 is a plan view of an electrode pattern for a liquid crystal display element manufactured according to an embodiment of the present invention. Figure 3 (
A)-(F), Fig. 4(A)-(F) and Fig. 5(A)
) to (E) are cross-sectional views illustrating the process of forming an electrode pattern for a liquid crystal display element according to a conventional example. 1...Glass substrate, 2...Transparent conductive film, 2'...
・Transparent conductive film electrode pattern, 3...Molybdenum metal thin film, 3'...Metal film electrode pattern, 4...Resist film, 5...Photomask agent, patent attorney Takeshi Sugiyama (and 1 other person) ) Akabe (A) Figure 1 Figure 3, l2 (8,q Figure 2 (A)
Claims (1)
積層して形成される補助用金属薄膜電極との２層構造で
電極パターンが構成される液晶表示素子の製造方法にお
いて、前記電極パターンの形成を同一の感光性フォトレ
ジストによってフォトリソグラフィーで作製することを
特徴とする液晶表示素子の製造方法。1. A method for manufacturing a liquid crystal display element in which an electrode pattern is configured with a two-layer structure of an electrode of a transparent conductive film for display on a glass substrate and an auxiliary metal thin film electrode laminated thereon, wherein the electrode 1. A method for manufacturing a liquid crystal display element, characterized in that patterns are formed by photolithography using the same photosensitive photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14905188A JPH022519A (en) | 1988-06-15 | 1988-06-15 | Production of liquid crystal display element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14905188A JPH022519A (en) | 1988-06-15 | 1988-06-15 | Production of liquid crystal display element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH022519A true JPH022519A (en) | 1990-01-08 |
Family
ID=15466581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14905188A Pending JPH022519A (en) | 1988-06-15 | 1988-06-15 | Production of liquid crystal display element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH022519A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5124743A (en) * | 1990-09-12 | 1992-06-23 | Fuji Photo Film Co., Ltd. | Photographic printer with apparatus for straightening curl of developed photographic film |
| US5149168A (en) * | 1990-06-25 | 1992-09-22 | Tokai Kogyo Co. Ltd. | Window molding for automobile |
| EP0660381A1 (en) * | 1993-12-21 | 1995-06-28 | Koninklijke Philips Electronics N.V. | Method of manufacturing a transparent conductor pattern and a liquid crystal display device |
| US6850307B2 (en) | 2000-02-18 | 2005-02-01 | Seiko Epson Corporation | Display device substrate, method for manufacturing the display device substrate, liquid-crystal display device, and electronic equipment |
| JP2012169335A (en) * | 2011-02-10 | 2012-09-06 | Shin Etsu Polymer Co Ltd | Method of manufacturing conductive pattern formation substrate |
| WO2014084126A1 (en) * | 2012-11-30 | 2014-06-05 | 株式会社Ｊｖｃケンウッド | Display element and method for manufacturing same |
-
1988
- 1988-06-15 JP JP14905188A patent/JPH022519A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5149168A (en) * | 1990-06-25 | 1992-09-22 | Tokai Kogyo Co. Ltd. | Window molding for automobile |
| US5124743A (en) * | 1990-09-12 | 1992-06-23 | Fuji Photo Film Co., Ltd. | Photographic printer with apparatus for straightening curl of developed photographic film |
| EP0660381A1 (en) * | 1993-12-21 | 1995-06-28 | Koninklijke Philips Electronics N.V. | Method of manufacturing a transparent conductor pattern and a liquid crystal display device |
| US6850307B2 (en) | 2000-02-18 | 2005-02-01 | Seiko Epson Corporation | Display device substrate, method for manufacturing the display device substrate, liquid-crystal display device, and electronic equipment |
| US6922225B2 (en) | 2000-02-18 | 2005-07-26 | Seiko Epson Corporation | Display device substrate, method for manufacturing the display device substrate, liquid-crystal device, and electronic equipment |
| US6924867B2 (en) | 2000-02-18 | 2005-08-02 | Seiko Epson Corporation | Display device substrate, method for manufacturing the display device substrate, liquid-crystal device, and electronic equipment |
| JP2012169335A (en) * | 2011-02-10 | 2012-09-06 | Shin Etsu Polymer Co Ltd | Method of manufacturing conductive pattern formation substrate |
| WO2014084126A1 (en) * | 2012-11-30 | 2014-06-05 | 株式会社Ｊｖｃケンウッド | Display element and method for manufacturing same |
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