JP2907318B2 - Electrode-embedded substrate and method of manufacturing the same - Google Patents
Electrode-embedded substrate and method of manufacturing the sameInfo
- Publication number
- JP2907318B2 JP2907318B2 JP6216361A JP21636194A JP2907318B2 JP 2907318 B2 JP2907318 B2 JP 2907318B2 JP 6216361 A JP6216361 A JP 6216361A JP 21636194 A JP21636194 A JP 21636194A JP 2907318 B2 JP2907318 B2 JP 2907318B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- substrate
- acid
- embedded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
Landscapes
- Non-Insulated Conductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は絶縁基板上に成膜された
絶縁膜に電極が埋設して設けられている電極埋設基板及
びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrode-embedded substrate in which electrodes are embedded in an insulating film formed on an insulating substrate, and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】従来、電極埋設基板の製造方法として
は、珪弗化水素酸を含む溶液からの酸化ケイ素（Ｓi
Ｏ2）等の析出堆積によって、親水性の基板表面及び電
極となる金属膜側面への選択的成膜特性を用いて、基板
上に電極を埋設した後の基板表面形状を平坦面にする方
法が知られている。これによれば、Ｃrなどの薄膜の体
積抵抗率で数１０から数１００μΩcm程度の金属材料で
構成される微細な配線電極膜を、基板表面に平坦に埋め
込むことができる。2. Description of the Related Art Conventionally, as a method of manufacturing an electrode-embedded substrate, silicon oxide (Si) from a solution containing hydrosilicofluoric acid has been used.
A method of flattening the surface shape of a substrate after embedding electrodes on a substrate by using selective film formation characteristics on a hydrophilic substrate surface and a metal film side surface serving as an electrode by deposition and deposition of O 2 ) or the like. It has been known. According to this, a fine wiring electrode film made of a metal material having a volume resistivity of about several tens to several hundreds μΩcm of a thin film such as Cr can be buried flat in the substrate surface.
【０００３】[0003]
【発明が解決しようとする課題】ところで、体積抵抗率
が２．５μΩcm程度という低抵抗の材料であるアルミニ
ウム（Ａl）を用いて、Ａl配線電極を基板表面に埋設し
ようとする場合、ＳiＯ2の液相成膜時に使用する珪弗化
水素酸を含む溶液に対するＡlの耐腐食性が低いため
に、パターニングされたＡl金属電極が溶液に溶解して
しまうので、結局、Ａlを電極材料として使用すること
ができない。このように、従来の埋設電極基板の製造方
法にあっては、低抵抗の金属材料であっても酸に弱い性
質を有する材料を電極に使用することができない。When Al wiring electrodes are to be buried on the substrate surface using aluminum (Al), which is a low-resistance material having a volume resistivity of about 2.5 μΩcm, the use of SiO 2 is difficult. Since the corrosion resistance of Al to a solution containing hydrosilicofluoric acid used during liquid phase film formation is low, the patterned Al metal electrode is dissolved in the solution, so that Al is ultimately used as an electrode material. Can not do. As described above, in the conventional method of manufacturing a buried electrode substrate, it is not possible to use a material having a property that is weak to an acid even for a low resistance metal material.
【０００４】[0004]
【課題を解決するための手段】上記課題を解決するため
請求項１の電極埋設基板は、電極を酸に溶解し難い材料
よりなる２つの保護膜の間に低抵抗材料よりなる金属膜
を膜厚方向に挟んでなる構成とした。そして、請求項２
の電極埋設基板の製造方法は、絶縁基板上に酸に溶解し
難い材料よりなる第１保護膜、低抵抗材料よりなる電極
膜及び酸に溶解し難い材料よりなる第２保護膜を順次積
層成膜した後、パターニング及び絶縁膜の液相成膜を行
い、酸に溶解し難い材料よりなる２つの保護膜の間に低
抵抗材料よりなる電極膜を膜厚方向に挟んで電極を埋設
形成するようにした。According to a first aspect of the present invention, there is provided an electrode-embedded substrate in which a metal film made of a low-resistance material is formed between two protective films made of a material that is difficult to dissolve electrodes in acid. It was configured to be sandwiched in the thickness direction. And claim 2
According to the method for manufacturing an electrode-embedded substrate, a first protective film made of a material hardly soluble in acid, an electrode film made of a low-resistance material, and a second protective film made of a material hardly soluble in acid are sequentially laminated on an insulating substrate. After the film is formed, patterning and liquid-phase film formation of an insulating film are performed, and an electrode is buried and formed by sandwiching an electrode film made of a low-resistance material in a film thickness direction between two protective films made of a material hardly soluble in acid. I did it.
【０００５】また、請求項３の電極埋設基板は、電極を
低抵抗材料よりなる金属膜の周囲に酸に溶解し難い材料
よりなる保護膜が設けられている構成とした。そして、
請求項４の電極埋設基板の製造方法は、絶縁基板上に低
抵抗材料よりなる電極膜を成膜した後、この電極膜のパ
ターニングを行い、次いでパターニング後の電極膜の周
囲に酸に溶解し難い材料よりなる保護膜を成膜した後、
絶縁膜の液相成膜を行って、低抵抗材料よりなる電極膜
の周囲に酸に溶解し難い材料よりなる保護膜が設けられ
ている電極を埋設形成するようにした。The electrode-embedded substrate according to the third aspect of the present invention has a structure in which an electrode is provided around a metal film made of a low-resistance material with a protective film made of a material that is hardly dissolved in acid. And
In the method of manufacturing an electrode-embedded substrate according to claim 4, after forming an electrode film made of a low-resistance material on an insulating substrate, the electrode film is patterned and then dissolved in an acid around the patterned electrode film. After forming a protective film made of difficult materials,
An insulating film is formed in a liquid phase, and an electrode provided with a protective film made of a material that is hardly dissolved in an acid is provided around an electrode film made of a low-resistance material.
【０００６】[0006]
【作用】酸に溶解し難い材料よりなる２つの保護膜の間
に低抵抗材料よりなる金属膜を膜厚方向に挟むことによ
って、あるいは電極が低抵抗材料よりなる金属膜の周囲
に酸に溶解し難い材料よりなる保護膜を設けることで、
酸を含む溶液を用いた液相成膜法によって選択的に絶縁
膜を形成するときに、低抵抗材料よりなる金属膜が溶液
に晒されないので、耐酸性の低い低抵抗材料を電極材料
として用いることができる。[Function] A metal film made of a low-resistance material is sandwiched in the thickness direction between two protective films made of a material hardly soluble in an acid, or an electrode is dissolved in an acid around a metal film made of a low-resistance material. By providing a protective film made of a difficult material,
When an insulating film is selectively formed by a liquid phase film formation method using a solution containing an acid, a metal film made of a low-resistance material is not exposed to the solution, and thus a low-resistance material having low acid resistance is used as an electrode material. be able to.
【０００７】[0007]
【実施例】以下に本発明の実施例を添付図面に基づいて
説明する。図１は請求項１及び２に係る電極埋設基板及
びその製造方法を説明する模式図、図２は請求項３及び
４に係る電極埋設基板及びその製造方法を説明する模式
図である。Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a schematic diagram illustrating an electrode-embedded substrate according to claims 1 and 2 and a method for manufacturing the same, and FIG. 2 is a schematic diagram illustrating an electrode-embedded substrate according to claims 3 and 4 and a method for manufacturing the same.
【０００８】先ず、図１を参照して請求項２に係る電極
埋設基板の製造方法によって請求項１に係る電極埋設基
板を製造する過程について説明する。ここでは、同図
（ａ）に示すように、まず絶縁基板１上に、酸に溶解し
難い材料よりなる第１保護膜２、低抵抗材料よりなる電
極膜３及び酸に溶解し難い材料よりなる第２保護膜４を
順次積層成膜し、これらの第１保護膜２、電極膜３及び
第２保護膜４からなる積層電極膜５を形成する。First, a process of manufacturing an electrode-embedded substrate according to claim 1 by a method for manufacturing an electrode-embedded substrate according to claim 2 will be described with reference to FIG. Here, as shown in FIG. 1A, first, a first protective film 2 made of a material hardly soluble in acid, an electrode film 3 made of a low-resistance material, and a material hardly soluble in acid are formed on an insulating substrate 1. The second protective film 4 is sequentially laminated to form a laminated electrode film 5 including the first protective film 2, the electrode film 3, and the second protective film 4.
【０００９】ここで、基板１は低アルカリガラス、アル
カリパーッシベーションを施したようなソーダガラス、
または樹脂基板、例えばＰＥＴ（ポリエチレンテレフタ
レート）基板等を用いることができる。この基板１とし
ては、ＳiＯ2の液相で選択的成膜を行うために、その表
面が親水性であることが好ましい。Here, the substrate 1 is made of low alkali glass, soda glass subjected to alkali passivation,
Alternatively, a resin substrate, for example, a PET (polyethylene terephthalate) substrate or the like can be used. The surface of the substrate 1 is preferably hydrophilic in order to selectively form a film in a liquid phase of SiO 2 .
【００１０】ここで、第１保護膜２、第２保護膜４とし
て用いる酸に溶解し難い材料としては、酸を含む溶液に
溶解し難い性質を有する材料であれば特に限定されない
が、Ｃr、Ｔa、Ｎi、Ｍo、Ｗ、Ｔiなどの金属材料やこ
れらの酸化物、あるいはこれらの金属同士の合金及び複
合酸化物、また、ＳiＯ2、Ａl2Ｏ3、Ｎa2Ｏ、ＭｇＯな
どの酸化物やＳiＮなどの窒化物が好ましい。ただし、
第１，第２保護膜２，４の材料としては、電極の埋設工
程に使用する酸を含む溶液に基板上の薄膜として浸漬し
た場合の膜厚の溶解速度が、埋設工程で用いる液相成膜
によるＳiＯ2などの絶縁膜の成膜速度より遅いことが好
ましい。また、第１保護膜２及び第２保護膜４は同じ材
料でも、異なる材料でもよいが、基板表面上から見て電
極として機能する必要があるので、第２保護膜４には導
電性の材料を用いることが好ましい。Here, the material hardly soluble in an acid used for the first protective film 2 and the second protective film 4 is not particularly limited as long as it is a material hardly soluble in a solution containing an acid. Metal materials such as Ta, Ni, Mo, W, and Ti, oxides thereof, alloys and composite oxides of these metals, and oxides such as SiO 2 , Al 2 O 3 , Na 2 O, and MgO And nitrides such as SiN are preferred. However,
As the material of the first and second protective films 2 and 4, the dissolution rate of the film thickness when immersed as a thin film on a substrate in a solution containing an acid used in the embedding step of the electrode depends on the liquid phase composition used in the embedding step. It is preferable that the deposition rate of the insulating film such as SiO 2 is lower than that of the film. The first protective film 2 and the second protective film 4 may be the same material or different materials. However, since the first protective film 2 and the second protective film 4 need to function as electrodes when viewed from above the substrate surface, the second protective film 4 is made of a conductive material. It is preferable to use
【００１１】また、電極膜３として用いる低抵抗材料と
しては、体積抵抗率で１ｍΩｃｍ程度以下の低抵抗材料
であれば良く、特に、Ａl、Ｃu、Ｃr、Ｔa等が抵抗の低
さとコストの上でも好ましいが、Ａu、Ａg、Ｐt等を用
いることもできる。また、これらの合金や複合膜でもよ
く、更にＩＴＯ（インジウム−スズ−酸化物）等の導電
性のある金属酸化物でもよい。ここで、本発明の効果が
特に顕著に現れるのは、ＡlやＡlを主成分とした合金に
代表されるような酸を含む溶液に比較的溶解し易い材料
を用いた場合である。The low-resistance material used for the electrode film 3 may be any low-resistance material having a volume resistivity of about 1 mΩcm or less. In particular, Al, Cu, Cr, Ta, etc. are preferred because of their low resistance and cost. However, Au, Ag, Pt and the like can also be used. Further, an alloy or a composite film of these may be used, and a conductive metal oxide such as ITO (indium-tin-oxide) may be used. Here, the effect of the present invention appears particularly remarkably when a material that is relatively easily dissolved in an acid-containing solution such as Al or an alloy containing Al as a main component is used.
【００１２】さらに、第１保護膜２、電極膜３及び第２
保護膜４の膜厚の範囲については限定されないが、例え
ばＴＦＴゲート電極の場合、電極膜３にＡlを用いた場
合にその膜厚を３００ｎｍ程度とすると、第１，第２保
護膜２，４にＣrを選択しているとき、その膜厚は５０
ｎｍ程度にするのが電気特性及び製造工程上で実用的で
ある。また、電極膜３がガラス等の基板表面と密着性が
良くない場合、下地となる第１保護膜２としてガラスと
の密着性が高い材料を選択することによって、電極膜３
の基板表面の密着性が間接的に向上し、パターニング中
や埋設工程中の配線剥離の防止を図れる。Further, the first protective film 2, the electrode film 3, and the second
The range of the thickness of the protective film 4 is not limited. For example, in the case of a TFT gate electrode, when Al is used for the electrode film 3 and the thickness is about 300 nm, the first and second protective films 2 and 4 are formed. When Cr is selected for
It is practical to set it to about nm in terms of electrical characteristics and manufacturing processes. When the electrode film 3 has poor adhesion to the substrate surface such as glass, the material of the electrode film 3 is selected by selecting a material having high adhesion to glass as the first protective film 2 serving as a base.
The adhesion of the substrate surface is indirectly improved, and the peeling of the wiring during the patterning or the embedding process can be prevented.
【００１３】その後、同図（ｂ）に示すように、フォト
リソグラフィ法等に従って、基板上の積層電極膜５上に
レジストを塗布し、このレジストを露光及び現像してレ
ジストパターンを形成した後、このレジストパターンを
エッチング用マスクとして積層電極膜５をエッチングし
てパターニングし、レジストパターン（レジスト膜）６
を残したままとする。Thereafter, as shown in FIG. 1B, a resist is applied on the laminated electrode film 5 on the substrate by photolithography or the like, and the resist is exposed and developed to form a resist pattern. Using the resist pattern as an etching mask, the laminated electrode film 5 is etched and patterned to form a resist pattern (resist film) 6.
Is left.
【００１４】ここで、エッチング用レジスト膜（耐腐食
膜）は、フォトリソグラフィに通常用いられるフォトレ
ジストを用いることができる。また、レジスト膜の成膜
方法は、スピンコート、ロールコータなどの成膜方法を
用いることができる。更に、レジスト膜は印刷法等によ
る他のレジスト材料の部分成膜であってもよく、フォト
リソグラフィ以外の方法でパターニングすることもでき
る。Here, as the etching resist film (corrosion-resistant film), a photoresist generally used for photolithography can be used. In addition, as a method for forming the resist film, a film forming method such as spin coating or a roll coater can be used. Further, the resist film may be a partial film formation of another resist material by a printing method or the like, and may be patterned by a method other than photolithography.
【００１５】次いで、珪弗化水素酸を含む溶液を用いた
ＳiＯ2の液相析出成膜法を用いて、同図（ｃ）に示すよ
うに積層電極膜５がエッチングされて露出した基板１表
面部分に、ＳiＯ2絶縁膜７を積層電極５と同じ厚さだけ
成膜し、その後、同図（ｄ）に示すようにレジストパタ
ーン６を剥離する。Next, as shown in FIG. 1C, the substrate 1 on which the laminated electrode film 5 is etched and exposed is formed by a liquid phase deposition method of SiO 2 using a solution containing hydrofluoric acid. On the surface portion, an SiO 2 insulating film 7 is formed in the same thickness as the laminated electrode 5, and thereafter, the resist pattern 6 is peeled off as shown in FIG.
【００１６】ここで、絶縁膜７の成膜方法は、上記のよ
うに珪弗化水素酸を含む溶液からＳiＯ2を析出する方法
を用いるのが好ましいが、その他の溶液組成については
特に限定されるものではない。積層電極膜５以外の表面
に成膜可能で本発明の効果を発揮するものであれば、例
えばＡl2Ｏ3、ＭgＯ、Ｂ2Ｏ3、ＣrＯ2、Ｔa2Ｏ5等の電
気的絶縁性を有する金属酸化物やその他の絶縁性無機材
料をも用いることができる。更に、本用途に耐え得れ
ば、有機材料組成などを含む溶液から成膜する絶縁性有
機系材料を用いることもできる。Here, as a method of forming the insulating film 7, it is preferable to use a method of depositing SiO 2 from a solution containing hydrosilicofluoric acid as described above, but other composition of the solution is not particularly limited. Not something. As long as it can form a film on the surface other than the laminated electrode film 5 and exhibits the effects of the present invention, for example, it is possible to use an electrically insulating material such as Al 2 O 3 , MgO, B 2 O 3 , CrO 2 , Ta 2 O 5, etc. Metal oxides having the above and other insulating inorganic materials can also be used. Furthermore, an insulating organic material which is formed from a solution containing an organic material composition or the like can be used as long as it can withstand this use.
【００１７】このようにして、基板１上に酸に溶解し難
い材料よりなる２つの保護膜２，４の間に低抵抗材料よ
りなる金属膜３を膜厚方向に挟んでなる低抵抗の微細配
線電極をなす積層電極膜５が絶縁膜７に埋設され、表面
が平坦面をなす電極埋設基板が得られる。In this manner, a low-resistance fine film formed by sandwiching the metal film 3 made of a low-resistance material between the two protective films 2 and 4 made of a material that is hardly dissolved in an acid on the substrate 1 in the film thickness direction. The laminated electrode film 5 serving as a wiring electrode is embedded in the insulating film 7, and an electrode-embedded substrate having a flat surface is obtained.
【００１８】次に、図２を参照して請求項４に係る電極
埋設基板の製造方法によって請求項３に係る電極埋設基
板を製造する過程について説明する。ここでは、同図
（ａ）に示すように、まず絶縁基板１上に低抵抗材料よ
りなる電極膜３を成膜し、上記の場合と同様に、フォト
リソグラフィ法等により、所望の電極パターンにパター
ニングした後、そのときに使用したレジストパターン６
を残したままにし、同図（ｂ）に示すように電極膜３の
側面（周囲）に酸に溶解し難い材料よりなる保護膜８を
形成して、保護膜付き金属膜９を形成する。Next, a process of manufacturing the electrode-embedded substrate according to the third aspect by the method for manufacturing an electrode-embedded substrate according to the fourth aspect will be described with reference to FIG. Here, as shown in FIG. 1A, first, an electrode film 3 made of a low-resistance material is formed on an insulating substrate 1, and a desired electrode pattern is formed by a photolithography method or the like as in the above case. After patterning, resist pattern 6 used at that time
Is left, a protective film 8 made of a material that is hardly dissolved in acid is formed on the side surface (periphery) of the electrode film 3 as shown in FIG.
【００１９】ここで、電極膜３に用いる材料及び保護膜
８に用いる酸に溶解し難い材料も前述したと同様であ
る。この保護膜８を設ける手段は特に限定されないが、
例えば金属膜３がＡlのときには、陽極酸化法を用い
て、金属膜３を陽極とし、クエン酸溶液に浸漬した陰極
と直流電源を介して接続し、これに電圧を印加すること
によって、露出した電極膜３側面を選択的にアルミニウ
ム酸化物（Ａl2Ｏ3）の膜で被覆し、これを保護膜８と
する方法が、電極膜３側面に選択的に成膜ができるとい
う点で好ましい。この陽極酸化法は、ＴＦＴＬＣＤプロ
セス中でのゲート電極の表面酸化プロセスとして用いら
れており、また、電極膜３がＴaやＭoの場合にも適用す
ることができる。Here, the material used for the electrode film 3 and the material hardly soluble in acid used for the protective film 8 are the same as described above. Means for providing the protective film 8 is not particularly limited,
For example, when the metal film 3 is Al, the metal film 3 is used as an anode, connected to a cathode immersed in a citric acid solution via a DC power source, and exposed by applying a voltage to the metal film 3 using an anodic oxidation method. A method of selectively covering the side surface of the electrode film 3 with a film of aluminum oxide (Al 2 O 3 ) and using the film as the protective film 8 is preferable in that the film can be selectively formed on the side surface of the electrode film 3. This anodic oxidation method is used as a surface oxidation process of a gate electrode in a TFTLCD process, and can also be applied when the electrode film 3 is Ta or Mo.
【００２０】また、保護膜８を設ける他の方法として
は、例えばパターニングした電極膜３にレジストを残留
させたまま、必要な電圧を与えて行う電界メッキ法を用
いて、Ｎi、Ｚn、Ａu、Ｐt、Ａg、Ｐbなどの耐酸性の比
較的高い材料の被膜を選択的に電極膜３の側面に成膜す
る方法も電極膜３側面に選択的に成膜ができるという点
で好ましい。As another method of providing the protective film 8, for example, Ni, Zn, Au, Ni, Au, or the like is used by using an electroplating method in which a required voltage is applied while a resist is left on the patterned electrode film 3. A method of selectively forming a film of a relatively acid-resistant material such as Pt, Ag, or Pb on the side surface of the electrode film 3 is also preferable in that the film can be selectively formed on the side surface of the electrode film 3.
【００２１】次いで、珪弗化水素酸を含む溶液を用いた
ＳiＯ2の液相析出成膜法を用いて、同図（ｃ）に示すよ
うに保護膜付き電極膜９のない基板１表面部分に、Ｓi
Ｏ2絶縁膜７を保護膜付き電極膜９と同じ厚さだけ成膜
し、その後、同図（ｄ）に示すようにレジストパターン
６を剥離する。Next, as shown in FIG. 2C, a surface portion of the substrate 1 without the electrode film 9 with a protective film is formed by a liquid phase deposition method of SiO 2 using a solution containing hydrofluoric acid as shown in FIG. And Si
An O 2 insulating film 7 is formed to the same thickness as the electrode film 9 with a protective film, and then the resist pattern 6 is peeled off as shown in FIG.
【００２２】このようにして、基板１上に低抵抗材料よ
りなる金属膜３の周囲に酸に溶解し難い材料よりなる保
護膜８が設けられている低抵抗の微細配線電極をなす保
護膜付き電極膜９が絶縁膜７に埋設され、表面が平坦面
をなす電極埋設基板が得られる。In this manner, the protective film 8 is formed on the substrate 1 around the metal film 3 made of a low-resistance material, and the protection film 8 is made of a material that is hardly dissolved in an acid. The electrode film 9 is buried in the insulating film 7 to obtain an electrode-embedded substrate having a flat surface.
【００２３】以下に本発明の具体的な実施例について説
明する。 実施例１ 縦３５０ｍｍ、横４００ｍｍ、厚さ２ｍｍのサイズのＴ
ＦＴＬＣＤ用低アルカリガラス基板を用いて、これを洗
浄した後、スパッタ成膜によって第１保護膜となるＣr
膜を膜厚５０ｎｍで、電極膜となるＡl膜を膜厚３００
ｎｍで、第２保護膜となるＣr膜を膜厚５０ｎｍで順次
積層成膜し、総和で膜厚４００ｎｍの積層電極膜を成膜
した。Hereinafter, specific embodiments of the present invention will be described. Example 1 T having a size of 350 mm in length, 400 mm in width, and 2 mm in thickness
Using a low alkali glass substrate for FTLCD, cleaning the substrate, and then forming a first protective film of Cr by sputtering film formation.
The film has a thickness of 50 nm and the Al film serving as an electrode film has a thickness of 300 nm.
Then, a Cr film serving as a second protective film was sequentially laminated with a thickness of 50 nm and a laminated electrode film having a total thickness of 400 nm was formed.
【００２４】次に、フォトレジスト樹脂溶液をスピンコ
ートで１μｍの膜厚で積層電極膜（より詳細には第２保
護膜）上に成膜し、レジスト膜を得た。これをオーブン
にて乾燥し、パターニングのための所定のポジ用フォト
マスクを通して紫外線露光し、現像液にてレジストを現
像した。そして、Ｃr用エッチャントとＡl用エッチャン
トを順次用いて積層電極膜のエッチングを行い、所定の
パターンの積層電極膜を得た。Next, a photoresist resin solution was spin-coated to a thickness of 1 μm on the laminated electrode film (more specifically, the second protective film) to obtain a resist film. This was dried in an oven, exposed to ultraviolet light through a predetermined positive photomask for patterning, and developed with a developer. Then, the laminated electrode film was etched by sequentially using the etchant for Cr and the etchant for Al to obtain a laminated electrode film having a predetermined pattern.
【００２５】次いで、このレジスト膜を残したままの状
態で、積層電極膜をメッキ用電極としてＮiの電界メッ
キ用溶液に浸漬し、積層電極膜の側壁にＮiを析出させ
てＮi保護膜を膜厚１００ｎｍで成膜した。Next, with the resist film left as it is, the laminated electrode film is immersed in a Ni electrolytic plating solution as a plating electrode, and Ni is deposited on the side wall of the laminated electrode film to form a Ni protective film. A film was formed with a thickness of 100 nm.
【００２６】更に、レジスト膜を残したままの状態で、
珪弗化水素酸溶液中でのＳiＯ2の析出を用いた液相成膜
法によって、レジスト膜の存在しない部分で、親水性で
ある基板表面及び積層電極膜の側壁の部分に析出するよ
うにして、積層電極膜と同じ膜厚４００ｎｍのＳiＯ2の
絶縁膜を成膜した。そして、残留しているレジスト膜を
剥離液にて剥離することによって、基板上に所定パター
ンの積層電極膜が絶縁膜と同じ膜厚で埋め込まれて、表
面が平坦に形成された電極埋設基板が得られた。Further, with the resist film left,
By a liquid phase film forming method using precipitation of SiO 2 in a hydrosilicofluoric acid solution, the liquid is deposited on a hydrophilic substrate surface and a side wall of a laminated electrode film in a portion where no resist film exists. Thus, an SiO 2 insulating film having the same thickness as the stacked electrode film having a thickness of 400 nm was formed. By peeling off the remaining resist film with a peeling liquid, a laminated electrode film having a predetermined pattern is buried on the substrate with the same thickness as the insulating film, and the electrode buried substrate having a flat surface is formed. Obtained.
【００２７】実施例２ 縦３５０ｍｍ、横４００ｍｍ、厚さ２ｍｍのサイズのパ
ッシベーション用ＳiＯ2膜付きソーダライムガラス基板
を用いて、これを洗浄した後、スパッタ成膜によって電
極膜となるＡl膜を膜厚３００ｎｍで成膜した。次に、
フォトレジスト樹脂溶液をスピンコートで１μｍの膜厚
で電極膜上に成膜し、レジスト膜を得た。これをオーブ
ンにて乾燥し、パターニングのための所定のポジ用フォ
トマスクを通して紫外線露光し、現像液にてレジストを
現像した。Example 2 A soda lime glass substrate with a SiO 2 film for passivation having a size of 350 mm in length, 400 mm in width and 2 mm in thickness was washed, and then an Al film serving as an electrode film was formed by sputtering. A film was formed with a thickness of 300 nm. next,
A photoresist resin solution was spin-coated to a thickness of 1 μm on the electrode film to obtain a resist film. This was dried in an oven, exposed to ultraviolet light through a predetermined positive photomask for patterning, and developed with a developer.
【００２８】その後、Ａl用エッチャントをＡl膜のエッ
チングを行い、所定のパターンの電極膜を得た。次い
で、このレジスト膜を残したままの状態で、電極膜を陽
極とし、白金板を陰極として所定の電圧を印加しながら
陽極酸化用溶液に浸漬し、電極膜の側面に保護膜となる
Ａl2Ｏ3膜を膜厚２００ｎｍで形成した。After that, the Al film was etched with an Al etchant to obtain an electrode film having a predetermined pattern. Then, while still leaving the resist film, the electrode film as an anode and a platinum plate were immersed in the anodizing solution while applying a predetermined voltage as the cathode, a protective layer on the side surfaces of the electrode film Al 2 An O 3 film was formed with a thickness of 200 nm.
【００２９】更に、レジスト膜を残したままの状態で、
珪弗化水素酸溶液中でのＳiＯ2の析出を用いた液相成膜
法によって、レジスト膜の存在しない部分で、親水性で
ある基板表面及び電極膜の側壁の部分に析出するように
して、電極膜と同じ膜厚３００ｎｍのＳiＯ2の絶縁膜を
成膜した。そして、残留しているレジスト膜を剥離液に
て剥離することによって、基板上に所定パターンの電極
膜が絶縁膜と同じ膜厚で埋め込まれて、表面が平坦に形
成された電極埋設基板が得られた。Further, with the resist film left,
By a liquid phase film forming method using precipitation of SiO 2 in a hydrosilicofluoric acid solution, a liquid is deposited on a hydrophilic substrate surface and a side wall of an electrode film in a portion where no resist film exists. Then, an SiO 2 insulating film having a thickness of 300 nm, which is the same as the electrode film, was formed. Then, by removing the remaining resist film with a stripping solution, an electrode film having a predetermined pattern is embedded on the substrate with the same thickness as the insulating film, and an electrode-embedded substrate having a flat surface is obtained. Was done.
【００３０】[0030]
【発明の効果】以上に説明したように請求項１及び請求
項２の電極埋設基板及びその製造方法によれば、絶縁基
板上に酸に溶解し難い材料よりなる第１保護膜、低抵抗
材料よりなる電極膜及び酸に溶解し難い材料よりなる第
２保護膜を順次積層成膜し、電極が酸に溶解し難い材料
よりなる２つの保護膜の間に低抵抗材料よりなる金属膜
を膜厚方向に挟んでなる構成としたので、酸を含む溶液
を用いた液相成膜法によって選択的に絶縁膜を形成する
ときに、低抵抗材料よりなる金属膜が溶液に晒されない
ので、耐酸性の低い低抵抗材料を電極材料として用いる
ことができ、低抵抗の電極を容易にかつ低コストで埋設
することが可能になる。As described above, according to the electrode-embedded substrate and the method of manufacturing the electrode-embedded substrate according to the first and second aspects, the first protective film and the low-resistance material made of a material that is hardly dissolved in an acid are formed on the insulating substrate. An electrode film made of a material that is hardly soluble in acid and a second protective film made of a material that is hardly soluble in acid are sequentially laminated, and a metal film made of a low-resistance material is formed between two protective films made of a material whose electrode is hardly soluble in acid. Since the insulating film is sandwiched in the thickness direction, the metal film made of a low-resistance material is not exposed to the solution when the insulating film is selectively formed by a liquid phase film forming method using a solution containing an acid. A low-resistance material having low resistance can be used as an electrode material, and a low-resistance electrode can be embedded easily and at low cost.
【００３１】また請求項３及び請求項４の電極埋設基板
及びその製造方法によれば、基板上に低抵抗材料よりな
る電極膜を成膜した後、この電極膜のパターニングを行
い、次いでパターニング後の電極膜の周囲に酸に溶解し
難い材料よりなる保護膜を成膜し、電極が低抵抗材料よ
りなる金属膜の周囲に酸に溶解し難い材料よりなる保護
膜が設けられている構成としたので、酸を含む溶液を用
いた液相成膜法によって選択的に絶縁膜を形成するとき
に、低抵抗材料よりなる金属膜が溶液に晒されないの
で、耐酸性の低い低抵抗材料を電極材料として用いるこ
とができ、低抵抗の電極を容易にかつ低コストで埋設す
ることが可能になる。According to the electrode-embedded substrate and the method of manufacturing the same according to the third and fourth aspects, an electrode film made of a low-resistance material is formed on the substrate, and then the electrode film is patterned. A protective film made of a material that is hardly soluble in acid is formed around the electrode film, and a protective film made of a material that is hardly soluble in acid is provided around a metal film whose electrodes are made of a low-resistance material; Therefore, when an insulating film is selectively formed by a liquid-phase film forming method using a solution containing an acid, a metal film made of a low-resistance material is not exposed to the solution, so that a low-resistance material having low acid resistance is used as an electrode. It can be used as a material, and a low-resistance electrode can be embedded easily and at low cost.
【図１】請求項１及び２に係る電極埋設基板及びその製
造方法を説明する模式図FIG. 1 is a schematic diagram illustrating an electrode-embedded substrate and a method for manufacturing the same according to claim 1;
【図２】請求項３及び４に係る電極埋設基板及びその製
造方法を説明する模式図FIG. 2 is a schematic diagram illustrating an electrode-embedded substrate and a method of manufacturing the same according to claims 3 and 4;
１…基板、２…第１保護膜、３…電極膜、４…第２保護
膜、５…積層電極膜、６…レジストパターン、７…絶縁
膜、８…保護膜、９…保護膜付き電極膜。DESCRIPTION OF SYMBOLS 1 ... board | substrate, 2 ... 1st protective film, 3 ... electrode film, 4 ... 2nd protective film, 5 ... laminated electrode film, 6 ... resist pattern, 7 ... insulating film, 8 ... protective film, 9 ... electrode with a protective film film.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０１Ｌ 21/3205 Ｈ０１Ｌ 21/88 Ｒ (72)発明者 青木 裕一 大阪府大阪市中央区道修町３丁目５番11 号 日本板硝子株式会社内 (72)発明者 斉藤 英昭 大阪府大阪市中央区道修町３丁目５番11 号 日本板硝子株式会社内 (72)発明者 楠田 幸久 大阪府大阪市中央区道修町３丁目５番11 号 日本板硝子株式会社内 (72)発明者 竹村 和夫 大阪府大阪市中央区道修町３丁目５番11 号 日本板硝子株式会社内 (58)調査した分野(Int.Cl.6，ＤＢ名) H05K 1/11,1/09 H05K 3/28 H05K 3/40 ────────────────────────────────────────────────── ─── Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 21/3205 H01L 21/88 R (72) Inventor Yuichi Aoki 3-5-1-11 Doshomachi, Chuo-ku, Osaka-shi, Osaka Nippon Sheet Glass (72) Inventor Hideaki Saito 3-5-11, Doshu-cho, Chuo-ku, Osaka-shi, Osaka Nippon Sheet Glass Co., Ltd. (72) Yukihisa Kusuda 3-5-1, Doshu-cho, Chuo-ku, Osaka-shi, Osaka Within Nippon Sheet Glass Co., Ltd. (72) Inventor Kazuo Takemura 3-5-11, Doshumachi, Chuo-ku, Osaka-shi, Osaka Nippon Sheet Glass Co., Ltd. (58) Field surveyed (Int.Cl. 6 , DB name) H05K 1 / 11,1 / 09 H05K 3/28 H05K 3/40
Claims (4)
埋設された電極埋設基板において、前記電極は、酸に溶
解し難い材料よりなる２つの保護膜の間に低抵抗材料よ
りなる金属膜を膜厚方向に挟んで構成したことを特徴と
する電極埋設基板。In an electrode-embedded substrate in which an electrode is embedded in an insulating film formed on an insulating substrate, the electrode is made of a low-resistance material between two protective films made of a material that is hardly dissolved in acid. An electrode-embedded substrate comprising a metal film sandwiched in a thickness direction.
後、このパターニングに用いたレジストを前記電極膜上
に残留させたまま前記基板上の電極膜が除去された部分
に、酸を含む溶液を用いた液相成膜法によって選択的に
絶縁膜を形成することで絶縁膜に電極が埋設された電極
埋設基板を製造する方法において、前記絶縁基板上に酸
に溶解し難い材料よりなる第１保護膜、低抵抗材料より
なる電極膜及び酸に溶解し難い材料よりなる第２保護膜
を順次積層成膜した後、前記パターニング及び絶縁膜の
液相成膜を行い、酸に溶解し難い材料よりなる２つの保
護膜の間に低抵抗材料よりなる電極膜を膜厚方向に挟ん
でなる電極を埋設形成することを特徴とする電極埋設基
板の製造方法。2. After patterning an electrode film on an insulating substrate, a solution containing an acid is applied to a portion of the substrate from which the electrode film has been removed while the resist used for the patterning remains on the electrode film. In a method of manufacturing an electrode-embedded substrate in which an electrode is embedded in an insulating film by selectively forming an insulating film by a liquid phase film forming method used, a first material made of a material that is difficult to dissolve in an acid is formed on the insulating substrate. After sequentially forming a protective film, an electrode film made of a low-resistance material and a second protective film made of a material that is hardly soluble in acid, the patterning and liquid-phase film formation of the insulating film are performed, and a material that is hardly soluble in acid. A method for manufacturing an electrode-embedded substrate, comprising: burying an electrode formed by sandwiching an electrode film made of a low-resistance material in a thickness direction between two protective films made of the same.
埋設された電極埋設基板において、前記電極は、低抵抗
材料よりなる金属膜の周囲に酸に溶解し難い材料よりな
る保護膜を設けて構成したことを特徴とする電極埋設基
板。3. An electrode-embedded substrate in which an electrode is embedded in an insulating film formed on an insulating substrate, wherein the electrode is a protective film made of a material that is hardly dissolved in acid around a metal film made of a low-resistance material. An electrode-embedded substrate characterized by comprising:
後、このパターニングに用いたレジストを前記電極膜上
に残留させたまま前記基板上の電極膜が除去された部分
に、酸を含む溶液を用いた液相成膜法によって選択的に
絶縁膜を形成することで絶縁膜に電極が埋設された電極
埋設基板を製造する方法において、前記絶縁基板上に低
抵抗材料よりなる電極膜を成膜した後、この電極膜のパ
ターニングを行い、次いでパターニング後の電極膜の周
囲に酸に溶解し難い材料よりなる保護膜を成膜した後、
前記絶縁膜の液相成膜を行って、低抵抗材料よりなる電
極膜の周囲に酸に溶解し難い材料よりなる保護膜が設け
られている電極を埋設形成することを特徴とする電極埋
設基板の製造方法。4. After patterning an electrode film on an insulating substrate, a solution containing an acid is applied to a portion of the substrate where the electrode film has been removed while the resist used for the patterning remains on the electrode film. In a method for manufacturing an electrode-embedded substrate in which electrodes are embedded in an insulating film by selectively forming an insulating film by a liquid phase film forming method used, an electrode film made of a low-resistance material is formed on the insulating substrate. After that, after patterning this electrode film, then after forming a protective film made of a material that is hardly dissolved in acid around the patterned electrode film,
An electrode-embedded substrate, wherein a liquid-phase film formation of the insulating film is performed, and an electrode provided with a protective film made of a material that is hardly dissolved in acid is provided around an electrode film made of a low-resistance material. Manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6216361A JP2907318B2 (en) | 1994-09-09 | 1994-09-09 | Electrode-embedded substrate and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6216361A JP2907318B2 (en) | 1994-09-09 | 1994-09-09 | Electrode-embedded substrate and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0883965A JPH0883965A (en) | 1996-03-26 |
| JP2907318B2 true JP2907318B2 (en) | 1999-06-21 |
Family
ID=16687367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6216361A Expired - Lifetime JP2907318B2 (en) | 1994-09-09 | 1994-09-09 | Electrode-embedded substrate and method of manufacturing the same |
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| Country | Link |
|---|---|
| JP (1) | JP2907318B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0855614A4 (en) | 1996-05-15 | 2001-12-19 | Seiko Epson Corp | Thin film device having coating film, liquid crystal panel, electronic apparatus and method of manufacturing the thin film device |
| KR100412743B1 (en) | 1999-03-30 | 2003-12-31 | 세이코 엡슨 가부시키가이샤 | Method of manufacturing thin-film transistor |
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- 1994-09-09 JP JP6216361A patent/JP2907318B2/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| JPH0883965A (en) | 1996-03-26 |
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