JPH0221770U - - Google Patents

Info

Publication number
JPH0221770U
JPH0221770U JP10068388U JP10068388U JPH0221770U JP H0221770 U JPH0221770 U JP H0221770U JP 10068388 U JP10068388 U JP 10068388U JP 10068388 U JP10068388 U JP 10068388U JP H0221770 U JPH0221770 U JP H0221770U
Authority
JP
Japan
Prior art keywords
semiconductor laser
semiconductor
fused
surface layer
resistance surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10068388U
Other languages
English (en)
Other versions
JP2504995Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988100683U priority Critical patent/JP2504995Y2/ja
Publication of JPH0221770U publication Critical patent/JPH0221770U/ja
Application granted granted Critical
Publication of JP2504995Y2 publication Critical patent/JP2504995Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Description

【図面の簡単な説明】
第１図と第２図は本考案の一実施例に係わる光
半導体チツプキヤリアの構成を示す側面図と平面
図、第３図は従来の光半導体チツプキヤリアを含
むフラツト形パツケージの光モジユールの構成を
示す断面図である。 １０……半導体レーザ、１１，１２……ボンデ
イングワイヤ、２０……フオトダイオード、２１
，２２……ボンデイングワイヤ、３０……ヒート
シンク、３１……低抵抗の表面層、３２……高抵
抗の表面層、３３，３４……メタライズ層、４０
……金属ブロツク。

Claims (1)

  1. 【実用新案登録請求の範囲】 半導体レーザと、 この半導体レーザからの出力光をモニタする半
    導体受光素子と、 前記半導体レーザがメタライズ層を介して融着
    固定される低抵抗の表面層及び前記半導体受光素
    子がメタライズ層を介して融着固定される高抵抗
    の表面層を有する導電性のヒートシンクとを備え
    たことを特徴とする光半導体チツプキヤリア。
JP1988100683U 1988-07-29 1988-07-29 光半導体チップキャリア Expired - Lifetime JP2504995Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988100683U JP2504995Y2 (ja) 1988-07-29 1988-07-29 光半導体チップキャリア

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988100683U JP2504995Y2 (ja) 1988-07-29 1988-07-29 光半導体チップキャリア

Publications (2)

Publication Number Publication Date
JPH0221770U true JPH0221770U (ja) 1990-02-14
JP2504995Y2 JP2504995Y2 (ja) 1996-07-24

Family

ID=31328979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988100683U Expired - Lifetime JP2504995Y2 (ja) 1988-07-29 1988-07-29 光半導体チップキャリア

Country Status (1)

Country Link
JP (1) JP2504995Y2 (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60166172U (ja) * 1984-04-11 1985-11-05 ソニー株式会社 半導体発光装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60166172U (ja) * 1984-04-11 1985-11-05 ソニー株式会社 半導体発光装置

Also Published As

Publication number Publication date
JP2504995Y2 (ja) 1996-07-24

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