JPH0149788B2 - - Google Patents

Info

Publication number
JPH0149788B2
JPH0149788B2 JP60177782A JP17778285A JPH0149788B2 JP H0149788 B2 JPH0149788 B2 JP H0149788B2 JP 60177782 A JP60177782 A JP 60177782A JP 17778285 A JP17778285 A JP 17778285A JP H0149788 B2 JPH0149788 B2 JP H0149788B2
Authority
JP
Japan
Prior art keywords
palladium
substrate
copper
selectively
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60177782A
Other languages
English (en)
Other versions
JPS61127868A (ja
Inventor
Hooru Baumu Toomasu
An Hooru Furansesu
Ruusu Joonzu Kyaroru
An Koatsuku Kyarorin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24700804&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH0149788(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS61127868A publication Critical patent/JPS61127868A/ja
Publication of JPH0149788B2 publication Critical patent/JPH0149788B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
    • C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1813—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by radiant energy
    • C23C18/182—Radiation, e.g. UV, laser
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
    • C23C18/1831—Use of metal, e.g. activation, sensitisation with noble metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1862—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by radiant energy
    • C23C18/1868—Radiation, e.g. UV, laser
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2026—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by radiant energy
    • C23C18/204—Radiation, e.g. UV, laser
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28—Sensitising or activating
    • C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/184—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light

Description

【発明の詳細な説明】 Ａ 産業上の利用分野 本発明は、たとえば回路板の製造時に、銅を選
択的に付着させる方法に関するものである。
Ｂ 開示の慨要 最初にパラジウム化合物に光を照射して金属パ
ラジウムのシードを選択的に付着させることによ
り、銅を選択的に付着させる方法。パラジウムの
シードを付着させた後、無電解めつきにより銅を
付着させる。
Ｃ 従来技術およびその問題点 銅の無電解めつきに際し、金属パラジウムがシ
ーデイング材として作用することが知られてい
る。現在では、シーデイング操作は湿式法で行わ
れるが、これには数工程を必要とする。
米国特許第4340617号明細書には、本発明の方
法における気相工程に用いることのできる１種の
装置が開示されている。
Ｄ 問題点を解決するための手段 本発明によれば、最初に基板上に小さいパラジ
ウムのクラスタすなわちシードを選択的に付着さ
せる工程により、銅を基板上に選択的に付着させ
る。パラジウム・クラスタを選択的に付着させた
後、シーデイングした部分に銅を無電解めつきに
より付着させる。
パラジウム・シードの選択的付着は、基板をパ
ラジウム化合物の蒸気に接触させ、光を選択的に
照射することにより行う。照射する光はレーザ光
線でよい。光は次の２つのうちいずれかの方法で
作用させることができる。第１は基板が放射を吸
収する光熱法、第２は化合物が放射を吸収する光
化学法である。いずれの方法でも、パラジウム化
合物は還元性雰囲気、または還元剤の使用を必要
とせずに金属パラジウムに還元する。基板として
は、たとえばシリコン、アルミニウム、セラミツ
ク石英、重合体等各種のものが使用できる。この
方法は特に回路板上にパターンのある銅を付着さ
せる場合に適用される。
Ｅ 実施例 本発明の一実施例では、最初に基板をフオトレ
ジストあるいは重合体で被覆する。重合体をコー
テイングした基板に、たとえばマスクを通して選
択的に、パルス化したエクサイマ・レーザ光線を
照射すると、照射した部分の重合体が除去され
る。基板を、パラジウムを含有する化合物の蒸気
に露出すると、同じ場所に金属皮膜の付着が起
る。この皮膜は銅めつきのシードとして作用す
る。無電気めつきすると、回路パターンは重合体
皮膜に埋め込まれ、その表面は平たんになり、し
たがつて回路は機械的損傷から保護される。除去
エツチングと金属シードの付着は同時に行つて
も、同一装置内で別工程として行つてもよい。
本発明で、好ましいパラジウム化合物は、通常
Pd（hfac）2として表わされる、パラジウム（）
ビス（ヘキサフルオロアセチルアセトネート）で
ある。本化合物の他の誘導体を用いることもでき
る。一般に、パラジウム化合物で好ましいもの
は、パラジウムが酸素と結合したものである。
例 ポリイミドをシリコン・ウエーハに、2.4ミク
ロンの厚みにコーテイングし、硬化させた後、こ
のウエーハを、石英の窓と、パラジウム・化合物
を光の通路外に保持するウエルを備えた真空容器
内に置く。次に、このウエーハに、パラジウム
（）ビス（ヘキサフルオロアセチルアセトネー
ト）の存在下で、249nmで作動するパルス化した
エクサイマ・レーザ光を所望のパターンで照射し
た。電力密度約5MW／cm2、反復速度100Hzの条件
で30秒間露出を行うと、シリコン基板の照射を行
つた部分から重合体が完全に除去され、表面上に
は灰色の金属パラジウムの薄い層が見られた。次
に無電解銅めつき浴槽でめつきを行うと、残つた
重合体層とほぼ同じ厚さに銅が付着した。シリコ
ンへの銅の密着は（粘着テープ試験によれば）ポ
リイミドの密着より良好であつた。
Ｆ 発明の効果 本発明によれば、銅めつきのためのパラジウ
ム・シーデイングを極めて簡単に付与することが
できる。

Claims (1)

  1. 【特許請求の範囲】 １ (イ) 基板をパラジウム化合物の蒸気に接触さ
    せ、 (ロ) 上記のパラジウム化合物に光を選択的に照射
    して、上記の基板上に金属パラジウムのシード
    を選択的に付着させ、 (ハ) 基板上のパラジウムのシードが付着した部分
    に、無電解めつきにより銅を付着させることを
    特徴とする。 基板上に銅を選択的に付着させる方法。
JP60177782A 1984-11-19 1985-08-14 銅の選択的付着方法 Granted JPS61127868A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/672,975 US4574095A (en) 1984-11-19 1984-11-19 Selective deposition of copper
US672975 1984-11-19

Publications (2)

Publication Number Publication Date
JPS61127868A JPS61127868A (ja) 1986-06-16
JPH0149788B2 true JPH0149788B2 (ja) 1989-10-26

Family

ID=24700804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60177782A Granted JPS61127868A (ja) 1984-11-19 1985-08-14 銅の選択的付着方法

Country Status (4)

Country Link
US (1) US4574095A (ja)
EP (1) EP0182193B1 (ja)
JP (1) JPS61127868A (ja)
DE (1) DE3563635D1 (ja)

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661372A (en) * 1985-12-23 1987-04-28 General Motors Corporation UV-induced copper-catalyzed electroless deposition onto styrene-derivative polymer surface
GB8602331D0 (en) * 1986-01-30 1986-03-05 Ici Plc Multilayer systems
EP0233145B1 (de) * 1986-01-30 1989-10-18 Ciba-Geigy Ag Polymerzusammensetzungen enthaltend einen gelösten Dibenzalaceton-Palladiumkomplex
US4865873A (en) * 1986-09-15 1989-09-12 General Electric Company Electroless deposition employing laser-patterned masking layer
EP0260514B1 (en) * 1986-09-15 1991-06-19 General Electric Company Photoselective metal deposition process
EP0260516A1 (en) * 1986-09-15 1988-03-23 General Electric Company Photoselective metal deposition process
US5075037A (en) * 1986-11-07 1991-12-24 Monsanto Company Selective catalytic activation of polymeric films
US4910072A (en) * 1986-11-07 1990-03-20 Monsanto Company Selective catalytic activation of polymeric films
US4853252A (en) * 1986-12-17 1989-08-01 Siemens Aktiengesellschaft Method and coating material for applying electrically conductive printed patterns to insulating substrates
EP0287843B1 (de) * 1987-04-24 1990-08-29 Siemens Aktiengesellschaft Verfahren zur Herstellung von Leiterplatten
JPS6417874A (en) * 1987-07-10 1989-01-20 Ibm Metallizing method
DE3826046A1 (de) * 1987-08-17 1989-03-02 Asea Brown Boveri Verfahren zur herstellung von metallischen schichten
US4775608A (en) * 1987-10-05 1988-10-04 International Business Machines Corporation Generation of capacitive servo patterns on magnetic storage disks
US5171709A (en) * 1988-07-25 1992-12-15 International Business Machines Corporation Laser methods for circuit repair on integrated circuits and substrates
US5182230A (en) * 1988-07-25 1993-01-26 International Business Machines Corporation Laser methods for circuit repair on integrated circuits and substrates
US4960613A (en) * 1988-10-04 1990-10-02 General Electric Company Laser interconnect process
US5084311A (en) * 1988-12-28 1992-01-28 General Electric Company Electromagnetic transducers and method of making them
US5167983A (en) * 1988-12-28 1992-12-01 General Electric Company Method of forming a conductor pattern on the inside of a hollow tube by reacting a gas or fluid therein with actinic radiation
US5084299A (en) * 1989-08-10 1992-01-28 Microelectronics And Computer Technology Corporation Method for patterning electroless plated metal on a polymer substrate
US5192581A (en) * 1989-08-10 1993-03-09 Microelectronics And Computer Technology Corporation Protective layer for preventing electroless deposition on a dielectric
US4981715A (en) * 1989-08-10 1991-01-01 Microelectronics And Computer Technology Corporation Method of patterning electroless plated metal on a polymer substrate
GB8927310D0 (en) * 1989-12-02 1990-01-31 Lsi Logic Europ Via-hole filling in semiconductor devices
US5183795A (en) * 1989-12-13 1993-02-02 Intel Corporation Fully planar metalization process
US5405656A (en) * 1990-04-02 1995-04-11 Nippondenso Co., Ltd. Solution for catalytic treatment, method of applying catalyst to substrate and method of forming electrical conductor
JPH0775789B2 (ja) * 1990-06-14 1995-08-16 インターナショナル・ビジネス・マシーンズ・コーポレイション 化学ハンダおよびそれを用いる結合方法
US5145714A (en) * 1990-10-30 1992-09-08 Mcnc Metal-organic chemical vapor deposition for repairing broken lines in microelectronic packages
US5153023A (en) * 1990-12-03 1992-10-06 Xerox Corporation Process for catalysis of electroless metal plating on plastic
US5139818A (en) * 1991-06-06 1992-08-18 General Motors Corporation Method for applying metal catalyst patterns onto ceramic for electroless copper deposition
US5264108A (en) * 1992-09-08 1993-11-23 The United States Of America As Represented By The United States Department Of Energy Laser patterning of laminated structures for electroplating
US5459098A (en) * 1992-10-19 1995-10-17 Marietta Energy Systems, Inc. Maskless laser writing of microscopic metallic interconnects
US5462897A (en) * 1993-02-01 1995-10-31 International Business Machines Corporation Method for forming a thin film layer
JPH0737887A (ja) * 1993-07-22 1995-02-07 Mitsubishi Electric Corp 配線形成方法，配線修復方法，及び配線パターン変更方法
US5674787A (en) * 1996-01-16 1997-10-07 Sematech, Inc. Selective electroless copper deposited interconnect plugs for ULSI applications
US5824599A (en) * 1996-01-16 1998-10-20 Cornell Research Foundation, Inc. Protected encapsulation of catalytic layer for electroless copper interconnect
US5891513A (en) * 1996-01-16 1999-04-06 Cornell Research Foundation Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications
US6429120B1 (en) * 2000-01-18 2002-08-06 Micron Technology, Inc. Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
US5660706A (en) * 1996-07-30 1997-08-26 Sematech, Inc. Electric field initiated electroless metal deposition
US5695810A (en) * 1996-11-20 1997-12-09 Cornell Research Foundation, Inc. Use of cobalt tungsten phosphide as a barrier material for copper metallization
US5969422A (en) * 1997-05-15 1999-10-19 Advanced Micro Devices, Inc. Plated copper interconnect structure
DE19723734C2 (de) 1997-06-06 2002-02-07 Gerhard Naundorf Leiterbahnstrukturen auf einem nichtleitenden Trägermaterial und Verfahren zu ihrer Herstellung
US5833820A (en) * 1997-06-19 1998-11-10 Advanced Micro Devices, Inc. Electroplating apparatus
US5972192A (en) * 1997-07-23 1999-10-26 Advanced Micro Devices, Inc. Pulse electroplating copper or copper alloys
US6136693A (en) * 1997-10-27 2000-10-24 Chartered Semiconductor Manufacturing Ltd. Method for planarized interconnect vias using electroless plating and CMP
US6211073B1 (en) 1998-02-27 2001-04-03 Micron Technology, Inc. Methods for making copper and other metal interconnections in integrated circuits
US6006582A (en) * 1998-03-17 1999-12-28 Advanced Technology Materials, Inc. Hydrogen sensor utilizing rare earth metal thin film detection element
US5968333A (en) * 1998-04-07 1999-10-19 Advanced Micro Devices, Inc. Method of electroplating a copper or copper alloy interconnect
US6284656B1 (en) 1998-08-04 2001-09-04 Micron Technology, Inc. Copper metallurgy in integrated circuits
US6288442B1 (en) 1998-09-10 2001-09-11 Micron Technology, Inc. Integrated circuit with oxidation-resistant polymeric layer
US6165912A (en) * 1998-09-17 2000-12-26 Cfmt, Inc. Electroless metal deposition of electronic components in an enclosable vessel
US6255192B1 (en) 1998-09-29 2001-07-03 Conexant Systems, Inc. Methods for barrier layer formation
US6495200B1 (en) 1998-12-07 2002-12-17 Chartered Semiconductor Manufacturing Ltd. Method to deposit a seeding layer for electroless copper plating
US6100195A (en) * 1998-12-28 2000-08-08 Chartered Semiconductor Manu. Ltd. Passivation of copper interconnect surfaces with a passivating metal layer
US20020127845A1 (en) * 1999-03-01 2002-09-12 Paul A. Farrar Conductive structures in integrated circuits
US8236159B2 (en) 1999-04-13 2012-08-07 Applied Materials Inc. Electrolytic process using cation permeable barrier
US20060157355A1 (en) * 2000-03-21 2006-07-20 Semitool, Inc. Electrolytic process using anion permeable barrier
US8852417B2 (en) 1999-04-13 2014-10-07 Applied Materials, Inc. Electrolytic process using anion permeable barrier
US6251781B1 (en) 1999-08-16 2001-06-26 Chartered Semiconductor Manufacturing Ltd. Method to deposit a platinum seed layer for use in selective copper plating
EP1234167A4 (en) * 1999-11-18 2005-06-29 Mst Technology Gmbh OPTICAL DETECTOR OF HYDROGEN
US7262130B1 (en) * 2000-01-18 2007-08-28 Micron Technology, Inc. Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
US6420262B1 (en) 2000-01-18 2002-07-16 Micron Technology, Inc. Structures and methods to enhance copper metallization
US6376370B1 (en) 2000-01-18 2002-04-23 Micron Technology, Inc. Process for providing seed layers for using aluminum, copper, gold and silver metallurgy process for providing seed layers for using aluminum, copper, gold and silver metallurgy
US7211512B1 (en) * 2000-01-18 2007-05-01 Micron Technology, Inc. Selective electroless-plated copper metallization
US20060189129A1 (en) * 2000-03-21 2006-08-24 Semitool, Inc. Method for applying metal features onto barrier layers using ion permeable barriers
US6674167B1 (en) * 2000-05-31 2004-01-06 Micron Technology, Inc. Multilevel copper interconnect with double passivation
US6423629B1 (en) * 2000-05-31 2002-07-23 Kie Y. Ahn Multilevel copper interconnects with low-k dielectrics and air gaps
GB0025989D0 (en) * 2000-10-24 2000-12-13 Shipley Co Llc Plating catalysts
US6977224B2 (en) 2000-12-28 2005-12-20 Intel Corporation Method of electroless introduction of interconnect structures
FR2828334A1 (fr) * 2001-08-03 2003-02-07 Schlumberger Systems & Service Procede pour rendre connectable electriquement et mecaniquement un dispositif electrique ayant une face munie de plots de contacts
GB2385863A (en) * 2001-10-29 2003-09-03 Qinetiq Ltd High resolution patterning method
GB2381274A (en) * 2001-10-29 2003-04-30 Qinetiq Ltd High resolution patterning method
WO2003060959A2 (en) * 2002-01-10 2003-07-24 Semitool, Inc. Method for applying metal features onto barrier layers using electrochemical deposition
US7008872B2 (en) 2002-05-03 2006-03-07 Intel Corporation Use of conductive electrolessly deposited etch stop layers, liner layers and via plugs in interconnect structures
US20050238812A1 (en) * 2002-06-04 2005-10-27 Bhangale Sunil M Method for electroless metalisation of polymer substrate
KR100819297B1 (ko) * 2002-06-26 2008-04-02 삼성전자주식회사 고반사율 미세 패턴의 제조방법
DE10245928B4 (de) * 2002-09-30 2006-03-23 Infineon Technologies Ag Verfahren zur strukturierten, selektiven Matallisierung einer Oberfläche eines Substrats
GB2417132B (en) * 2003-01-23 2007-04-04 Advanced Micro Devices Inc Method of forming a metal layer over a patterned dielectric by electroless deposition using a catalyst
US7087104B2 (en) * 2003-06-26 2006-08-08 Intel Corporation Preparation of electroless deposition solutions
US7220665B2 (en) * 2003-08-05 2007-05-22 Micron Technology, Inc. H2 plasma treatment
US20050274772A1 (en) * 2004-06-14 2005-12-15 Nelson Curtis L Treating an area to increase affinity for a fluid
US20050276933A1 (en) * 2004-06-14 2005-12-15 Ravi Prasad Method to form a conductive structure
US20050274933A1 (en) * 2004-06-15 2005-12-15 Peng Chen Formulation for printing organometallic compounds to form conductive traces
US20050276911A1 (en) * 2004-06-15 2005-12-15 Qiong Chen Printing of organometallic compounds to form conductive traces
CN102395712A (zh) 2009-02-12 2012-03-28 技术研究及发展基金有限公司 电镀铜的方法
US8952919B2 (en) 2011-02-25 2015-02-10 Taiwan Green Point Enterprises Co., Ltd. Capacitive touch sensitive housing and method for making the same
US20120273261A1 (en) 2010-10-20 2012-11-01 Taiwan Green Point Enterprises Co., Ltd. Circuit substrate having a circuit pattern and method for making the same
US8621749B2 (en) 2010-03-12 2014-01-07 Taiwan Green Point Enterprises Co., Ltd Non-deleterious technique for creating continuous conductive circuits
CN103313505B (zh) * 2012-03-13 2016-05-25 昆山联滔电子有限公司 非导电承载材料上的导体轨道结构的制造方法
US8795788B2 (en) * 2012-11-14 2014-08-05 Eastman Kodak Company Method for functional printing system

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1132923B (de) 1960-05-19 1962-07-12 Basf Ag Verfahren zur Herstellung von metallorganischen Komplexverbindungen des Palladiums
US3801368A (en) * 1970-11-25 1974-04-02 Toray Industries Process of electroless plating and article made thereby
US4324854A (en) 1980-03-03 1982-04-13 California Institute Of Technology Deposition of metal films and clusters by reactions of compounds with low energy electrons on surfaces
US4259409A (en) * 1980-03-06 1981-03-31 Ses, Incorporated Electroless plating process for glass or ceramic bodies and product
US4340617A (en) * 1980-05-19 1982-07-20 Massachusetts Institute Of Technology Method and apparatus for depositing a material on a surface
US4410569A (en) * 1980-06-13 1983-10-18 Minnesota Mining And Manufacturing Company Palladium (II) bis(hexafluoroacetylacetonate), adducts derived therefrom and uses thereof
US4495255A (en) * 1980-10-30 1985-01-22 At&T Technologies, Inc. Laser surface alloying
US4472513A (en) * 1980-12-29 1984-09-18 Allied Corporation Laser-synthesized catalysts
DE3150399A1 (de) 1981-12-15 1983-07-21 Schering Ag, 1000 Berlin Und 4619 Bergkamen Verfahren zur haftfesten metallisierung von keramischen materialien
US4451503A (en) 1982-06-30 1984-05-29 International Business Machines Corporation Photo deposition of metals with far UV radiation
US4420365A (en) * 1983-03-14 1983-12-13 Fairchild Camera And Instrument Corporation Formation of patterned film over semiconductor structure
US4486463A (en) * 1983-12-21 1984-12-04 Gte Laboratories, Incorporated Selective metal plating onto poly(phenylene sulfide) substrates

Also Published As

Publication number Publication date
EP0182193A2 (en) 1986-05-28
US4574095A (en) 1986-03-04
EP0182193B1 (en) 1988-07-06
DE3563635D1 (en) 1988-08-11
JPS61127868A (ja) 1986-06-16
EP0182193A3 (en) 1986-10-22

Similar Documents

Publication Publication Date Title
JPH0149788B2 (ja)
US4865873A (en) Electroless deposition employing laser-patterned masking layer
EP0260514B1 (en) Photoselective metal deposition process
US4981715A (en) Method of patterning electroless plated metal on a polymer substrate
US6319564B1 (en) Conductor track structures arranged on a nonconductive support material, especially fine conductor track structures, and method for producing the same
EP0180101A2 (en) Deposition of patterns using laser ablation
US4659587A (en) Electroless plating process and process for producing multilayer wiring board
US5250329A (en) Method of depositing conductive lines on a dielectric
US4869930A (en) Method for preparing substrates for deposition of metal seed from an organometallic vapor for subsequent electroless metallization
JPS6331555B2 (ja)
JPH04272182A (ja) 部分金属層製造方法および装置
JP2006128599A (ja) 金属膜を備えた基板および金属膜の形成方法
JPS63105974A (ja) 光選択的金属付着法
US5750212A (en) Process for the deposition of structured metallic coatings on glass substrates
US7081304B2 (en) Surface conductive resin, process for forming the same and wiring board
EP0298345B1 (en) Method for preparing substrates for subsequent electroless metallization
US5064681A (en) Selective deposition process for physical vapor deposition
Zhang et al. Photo-induced decomposition of platinum metalorganic films for electroless copper plating
JPS6066896A (ja) 基体に金属銅を付着するための方法
JP2501791B2 (ja) フイルムキヤリヤ形基板とその製造方法
EP0260410A2 (en) Process for selective physical vapour deposition
JP2006526889A (ja) ポリマー支持体材料およびセラミック支持体材料の構造化された金属被覆の方法、および当該方法に用いられる活性化可能な化合物
JPH01116920A (ja) 容量性サーボ・パターン生成方法
US5496772A (en) Method of manufacturing film carrier type substrate
JPH04362178A (ja) 完全または部分的被覆金層の製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees