JPH01253913A - Semiconductor wafer heat treatment system - Google Patents
Semiconductor wafer heat treatment systemInfo
- Publication number
- JPH01253913A JPH01253913A JP8149588A JP8149588A JPH01253913A JP H01253913 A JPH01253913 A JP H01253913A JP 8149588 A JP8149588 A JP 8149588A JP 8149588 A JP8149588 A JP 8149588A JP H01253913 A JPH01253913 A JP H01253913A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- film
- semiconductor wafer
- film thickness
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000005259 measurement Methods 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 15
- 235000012431 wafers Nutrition 0.000 description 32
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体ウェーハ熱処理装置に関し、特に半導体
ウェーハを高温で熱処理して表面に生成膜を形成する半
導体ウェーハ熱処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor wafer heat treatment apparatus, and more particularly to a semiconductor wafer heat treatment apparatus that heat-treats a semiconductor wafer at high temperature to form a formed film on its surface.
従来、この種の半導体ウェーハ熱処理装置は、第３図に
示すように、ウェーハローディング装置１と、プロセス
チューブ３とヒータ４と排気室５とり９−ンベンチ６と
を備える熱処理炉２と、ガス供給システム７とから構成
されており、半導体ウェーハ９をウェハローディング装
置１によりプロセスチューブ３内へ挿入し、高温雰囲気
でガス供給システムからガス供給口８を介して熱処理炉
２内へ半導体プロセスガスを供給することにより熱処理
が行われる。熱処理終了後、半導体ウェーハはウェーハ
ローディング装置１により熱処理炉２の外へ搬出される
。Conventionally, this type of semiconductor wafer heat treatment apparatus, as shown in FIG. The semiconductor wafer 9 is inserted into the process tube 3 by the wafer loading device 1, and the semiconductor process gas is supplied from the gas supply system to the heat treatment furnace 2 through the gas supply port 8 in a high temperature atmosphere. Heat treatment is performed by doing this. After the heat treatment is completed, the semiconductor wafer is carried out of the heat treatment furnace 2 by the wafer loading device 1.
この後、熱処理によって生成された膜（例えば、酸化膜
）の膜厚を測定するために、作業者の手により膜厚測定
器で膜厚測定が行われる。そして、膜厚測定値が目標値
に対してずれている場合には、再度熱処理炉２に挿入し
、熱処理を追加している。Thereafter, in order to measure the thickness of the film (eg, oxide film) produced by the heat treatment, the operator manually measures the film thickness using a film thickness measuring device. If the measured film thickness value deviates from the target value, the film is inserted into the heat treatment furnace 2 again and heat treatment is added.
上述した従来の半導体ウェーハ熱処理装置は、半導体ウ
ェーハ表面に熱処理により所定の膜を生成させるのであ
るが、熱処理炉内では生成膜厚の監視を行っていないの
で、熱処理終了後ウェーハローディング装置で熱処理炉
内から処理ずみの半導体ウェーハを取出し、膜厚測定器
にかけるまで生成膜厚はわからない。外部での膜厚測定
結果で生成膜厚が目標値通りであれば良いが、熱処理条
件、例えば、プロセスガス一・ブ内の温度及び圧力等が
変動することにより、目標値通りに生成されない場合が
ある。The conventional semiconductor wafer heat treatment equipment described above generates a predetermined film on the surface of the semiconductor wafer by heat treatment, but the thickness of the formed film is not monitored inside the heat treatment furnace. The thickness of the resulting film cannot be determined until the processed semiconductor wafer is removed from the chamber and subjected to a film thickness measuring device. It is fine if the produced film thickness matches the target value based on the results of external film thickness measurement, but if the produced film thickness does not match the target value due to fluctuations in the heat treatment conditions, such as the temperature and pressure inside the process gas tank. There is.
この場合には、再度熱処理を行う必要が生じ、作業が炉
雑となり、作業能率及び装置の処理能力の低下につなが
るという欠点がある。又、こうした再処理の半導体ウェ
ーハが存在すると、製造ライン全体の流れが悪くなり、
ひいては、拡散工期を延長させるという欠点がある。In this case, there is a disadvantage that it becomes necessary to perform heat treatment again, which makes the furnace operation cumbersome and leads to a decrease in work efficiency and processing capacity of the apparatus. In addition, the presence of such reprocessed semiconductor wafers impairs the flow of the entire manufacturing line,
Furthermore, it has the disadvantage of prolonging the diffusion period.
本発明の半導体ウェーハ熱処理装置は、半導体ウェーハ
を熱処理炉内の高温雰囲気中で熱処理して生成膜を形成
する半導体ウェーハ熱処理装置において、前記生成膜の
膜厚を測定する膜厚測定器と、該膜厚測定器からの測定
データを基に熱処理シーケンスを制御する制御部と、前
記熱処理炉からの輻射熱から前記膜厚測定器を保護する
石英板及び遮蔽板を備える保護部とを有している。The semiconductor wafer heat treatment apparatus of the present invention is a semiconductor wafer heat treatment apparatus that heat-treats a semiconductor wafer in a high-temperature atmosphere in a heat treatment furnace to form a produced film, and includes a film thickness measuring device that measures the thickness of the produced film; It has a control unit that controls a heat treatment sequence based on measurement data from the film thickness measurement device, and a protection unit that includes a quartz plate and a shielding plate that protects the film thickness measurement device from radiant heat from the heat treatment furnace. .
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の平面図である。ただし、第
１図では理解しやすいよう、熱処理炉の外殻を取除いた
状態を示す。FIG. 1 is a plan view of one embodiment of the present invention. However, for ease of understanding, FIG. 1 shows the heat treatment furnace with the outer shell removed.
第１図１こ示すように、ウェーハローディング装Ｗ１と
、プロセスチューブ３とヒータ４と排気室５とクリーン
ベンチ６とを備える熱処理炉２と、ガス供給システム７
と、排気室５に設けられた投光側の膜厚測定器１０１と
受光側の膜厚測定器１０ｂと、膜厚測定器１０−．１０
ｂの前面に取付けられた石英板１２と遮蔽板１３とを備
える保護部１１と、膜厚測定器制御部１４と、比較制御
部１６とマシンコントローラ１７とデータファイル１８
とから成る制御部１５とを′含む。As shown in FIG. 1, a heat treatment furnace 2 comprising a wafer loading equipment W1, a process tube 3, a heater 4, an exhaust chamber 5, and a clean bench 6, and a gas supply system 7
, a film thickness measuring device 101 on the light emitting side, a film thickness measuring device 10b on the light receiving side, and a film thickness measuring device 10-. 10
a protection unit 11 including a quartz plate 12 and a shielding plate 13 attached to the front surface of b, a film thickness measuring device control unit 14, a comparison control unit 16, a machine controller 17, and a data file 18.
and a control section 15 consisting of.
ヒータ４の内側にはプロセスチューブ３が設置されてい
て、プロセスチューブ３内に半導体ウェーハ９をマシン
コントローラ１７からの制御信号にしたがってウェーハ
ローティング装置１により挿入及び搬出が行われる。マ
シンコントローラ１７からのガス供給制御信号によりガ
ス供給システム７からガス供給口８を介して、半導体プ
ロセスガスがプロセスチューブ３内に供給され、半導体
ウェーハ９の熱処理が行われる。A process tube 3 is installed inside the heater 4, and a semiconductor wafer 9 is inserted into and taken out of the process tube 3 by the wafer loading device 1 in accordance with a control signal from a machine controller 17. A semiconductor process gas is supplied into the process tube 3 from the gas supply system 7 via the gas supply port 8 in response to a gas supply control signal from the machine controller 17, and the semiconductor wafer 9 is heat-treated.
排気室５には、膜厚測定器１０ｍ、１０ｂがプロセスチ
ューブ３の開口端３３付近で半導体ウェーハ９表面の生
成膜厚を測定できるよう、半導体ウェーハ９の面に対し
所定の角度をもって設置されている。膜厚測定器１０．
は投光側でレーザ光源と偏光板とを備え、膜厚測定器１
０ｂは受光側で分析器が取付けられている。In the exhaust chamber 5, film thickness measuring devices 10m and 10b are installed at a predetermined angle with respect to the surface of the semiconductor wafer 9 so as to measure the thickness of the film formed on the surface of the semiconductor wafer 9 near the open end 33 of the process tube 3. There is. Film thickness measuring device 10.
is equipped with a laser light source and a polarizing plate on the light emitting side, and a film thickness measuring device 1
0b is the light receiving side and an analyzer is attached thereto.
膜厚測定の方法は、投光側の膜厚測定器１０ａから出た
光が半導体ウェーハ９の表面で反射し、受光側の膜厚測
定器１０’ｂで反射光の偏光状態を測定するのである。The film thickness measurement method is such that the light emitted from the film thickness measuring device 10a on the light emitting side is reflected on the surface of the semiconductor wafer 9, and the polarization state of the reflected light is measured by the film thickness measuring device 10'b on the light receiving side. be.
石英板１２は排気室５内と膜厚測定器１０．．１０ｂの
前面とを隔離するために設置し、遮蔽板１３は膜厚測定
器１ｏ、。The quartz plate 12 is placed inside the exhaust chamber 5 and the film thickness measuring device 10. ．． The shielding plate 13 is installed to isolate the front surface of the film thickness measuring device 10b.
１０ｂを使用しない時にプロセスチューブ３がらの輻射
熱で膜厚測定器が損傷しないよう設けである。This is provided to prevent the film thickness measuring device from being damaged by radiant heat from the process tube 3 when the device 10b is not in use.
第２図は第１図の実施例の動作を説明するための熱処理
シーケンスの流れ図である。以下に、第２図を参照して
第１図の実施例の熱処理動作について説明する。FIG. 2 is a flowchart of a heat treatment sequence for explaining the operation of the embodiment shown in FIG. The heat treatment operation of the embodiment shown in FIG. 1 will be explained below with reference to FIG.
手順２０において、ウェーハローディング装置１に半導
体ウェーハ９をセットし、手順２１において、プロセス
チューブ３内に挿入する。手順２２において、指定した
時間熱処理が行われると、手順２３においてウェーハロ
ーディング装置１は半導体ウェーハ９をプロセスチュー
ブ３の開口端３．の膜厚測定位置まで移動する。In step 20, the semiconductor wafer 9 is set in the wafer loading device 1, and in step 21, it is inserted into the process tube 3. When the heat treatment is performed for the specified time in step 22, the wafer loading apparatus 1 loads the semiconductor wafer 9 into the open end 3. of the process tube 3 in step 23. Move to the film thickness measurement position.
次に、手順２４において、膜厚測定器１０８゜１０ｂに
より膜厚測定が行われる。手順２５において、測定した
膜厚データＤ、は比較制御部１６へ転送されて膜厚目標
値Ｔと比較され、Ｄｔ＜Ｔの場合は追加熱処理、Ｄｔ≧
Ｔの場合は熱処理終了と判断され、手順２６において、
半導体ウェーハ９を搬出し熱処理を終る。追加熱処理の
場合は、手順２７において、マシンコントローラ１７は
データファイル１８に格納したデータと膜厚データＤｔ
に基づき追加熱処理時間を算出し、マシンコントローラ
１７からウェーハローディング装置１とヒータ４とガス
供給システム７にそれぞれの制御信号が供給される。Next, in step 24, the film thickness is measured by the film thickness measuring device 108° 10b. In step 25, the measured film thickness data D is transferred to the comparison control unit 16 and compared with the film thickness target value T, and if Dt<T, additional heat treatment is performed, Dt≧
In the case of T, it is determined that the heat treatment is completed, and in step 26,
The semiconductor wafer 9 is carried out and the heat treatment is completed. In the case of additional heat treatment, in step 27, the machine controller 17 uses the data stored in the data file 18 and the film thickness data Dt.
The additional heat treatment time is calculated based on this, and control signals are supplied from the machine controller 17 to the wafer loading device 1, heater 4, and gas supply system 7, respectively.
以上説明したように本発明は、熱処理炉に熱処理による
生成膜厚を測定するための膜厚測定器を設置し、この膜
厚データを基に熱処理シーケンスに帰還制御をかける制
御部を有することにより、熱処理炉内での生成膜厚の管
理ができるので、目標膜厚値に対しての誤差及びバッチ
単位でのばらつきも減少できる効果がある。又、作業性
の点からも、熱処理終了後、半導体ウェーハを熱処理炉
から取出し、その後で膜厚測定器にかけて測定をし、膜
厚不良の時は再度熱処理を行う従来の作業に比べ、作業
効率が高く作業性が向上する。従って、熱処理能力を向
上させ、ひいては、半導体装置製造ラインでの拡散工期
を短縮できる効果がある。As explained above, the present invention includes installing a film thickness measuring device in a heat treatment furnace to measure the film thickness produced by heat treatment, and having a control section that performs feedback control on the heat treatment sequence based on this film thickness data. Since the thickness of the film formed in the heat treatment furnace can be controlled, errors with respect to the target film thickness value and variations between batches can be reduced. In addition, in terms of workability, the work efficiency is improved compared to the conventional process of taking the semiconductor wafer out of the heat treatment furnace after heat treatment, measuring it with a film thickness measuring device, and performing heat treatment again if the film thickness is poor. is high and work efficiency is improved. Therefore, it is possible to improve the heat treatment ability and shorten the diffusion process time on the semiconductor device manufacturing line.
第１図は本発明の一実施例の平面図、第２図は第１図の
実施例の動作を説明するための熱処理シーケンスの流れ
図、第３図は従来の半導体ウェーハ熱処理装置の一例の
平面図である。
°１・・・ウェーハローティング装置、２・・・熱処理
炉、３・・・プロセスチューブ、３１・・・開口端、４
・・・ヒータ、５・・・排気室、６・・・クリーンベン
チ、７・・・ガス供給システム、８・・・ガス供給口、
９・・・半導体ウェーハ、１０．．１０ｂ・・・膜厚測
定器、１１・・・保護部、１２・・・石英板、１３・・
・遮蔽板、１４・・・膜厚測定器制御部、１５・・・制
御部、１６・・・比較制御部、１７・・・マシンコント
ローラ、１８・・・データファイル、Ｄｔ・・・膜厚デ
ータ、Ｔ・・・膜厚目標値。
代理人 弁理士 内 原 音
情 ２ ｍFIG. 1 is a plan view of an embodiment of the present invention, FIG. 2 is a flowchart of a heat treatment sequence to explain the operation of the embodiment of FIG. 1, and FIG. 3 is a plan view of an example of a conventional semiconductor wafer heat treatment apparatus. It is a diagram. °1... Wafer rolling device, 2... Heat treatment furnace, 3... Process tube, 31... Open end, 4
... Heater, 5... Exhaust chamber, 6... Clean bench, 7... Gas supply system, 8... Gas supply port,
9... Semiconductor wafer, 10. ．． 10b...Film thickness measuring device, 11...Protection part, 12...Quartz plate, 13...
- Shielding plate, 14... Film thickness measuring device control section, 15... Control section, 16... Comparison control section, 17... Machine controller, 18... Data file, Dt... Film thickness Data, T... Film thickness target value. Agent Patent Attorney Uchihara Onjo 2m
Claims (1)
して生成膜を形成する半導体ウェーハ熱処理装置におい
て、前記生成膜の膜厚を測定する膜厚測定器と、該膜厚
測定器からの測定データを基に熱処理シーケンスを制御
する制御部と、前記熱処理炉からの輻射熱から前記膜厚
測定器を保護する石英板及び遮蔽板を備える保護部とを
有することを特徴とする半導体ウェーハ熱処理装置。A semiconductor wafer heat treatment apparatus that heat-treats a semiconductor wafer in a high-temperature atmosphere in a heat treatment furnace to form a produced film includes a film thickness measuring device that measures the film thickness of the produced film, and measurement data from the film thickness measuring device. A semiconductor wafer heat treatment apparatus comprising: a control section that controls a heat treatment sequence based on the heat treatment sequence; and a protection section that includes a quartz plate and a shielding plate that protects the film thickness measuring device from radiant heat from the heat treatment furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8149588A JPH01253913A (en) | 1988-04-01 | 1988-04-01 | Semiconductor wafer heat treatment system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8149588A JPH01253913A (en) | 1988-04-01 | 1988-04-01 | Semiconductor wafer heat treatment system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01253913A true JPH01253913A (en) | 1989-10-11 |
Family
ID=13747967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8149588A Pending JPH01253913A (en) | 1988-04-01 | 1988-04-01 | Semiconductor wafer heat treatment system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01253913A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100381538B1 (en) * | 2000-07-10 | 2003-05-22 | 학교법인 고황재단 | film thickness and composition control method using surface photoabsorption |
| KR100475078B1 (en) * | 2002-04-30 | 2005-03-10 | 삼성전자주식회사 | System and method for real time deposition process control based on resulting product detection |
-
1988
- 1988-04-01 JP JP8149588A patent/JPH01253913A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100381538B1 (en) * | 2000-07-10 | 2003-05-22 | 학교법인 고황재단 | film thickness and composition control method using surface photoabsorption |
| KR100475078B1 (en) * | 2002-04-30 | 2005-03-10 | 삼성전자주식회사 | System and method for real time deposition process control based on resulting product detection |
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