JPH04297054A - Method and apparatus for processing semiconductor wafer - Google Patents
Method and apparatus for processing semiconductor waferInfo
- Publication number
- JPH04297054A JPH04297054A JP3103195A JP10319591A JPH04297054A JP H04297054 A JPH04297054 A JP H04297054A JP 3103195 A JP3103195 A JP 3103195A JP 10319591 A JP10319591 A JP 10319591A JP H04297054 A JPH04297054 A JP H04297054A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- temperature
- processing
- wafer
- thermopile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 119
- 238000012545 processing Methods 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims description 27
- 238000004544 sputter deposition Methods 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000012937 correction Methods 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 4
- 238000009529 body temperature measurement Methods 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 103
- 230000005856 abnormality Effects 0.000 description 4
- 238000000427 thin-film deposition Methods 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- 239000002826 coolant Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、半導体ウエハーの表
面に対してスパッタ、エッチング、又はデポジション等
の処理を行う半導体ウエハーの処理方法および装置に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer processing method and apparatus for performing sputtering, etching, deposition, or other processing on the surface of a semiconductor wafer.
【０００２】0002
【従来の技術】従来、半導体ウエハーの表面に対してス
パッタ、エッチング、又はデポジション等の処理を行う
際には、処理中の半導体ウエハーの温度は、処理結果を
大きく左右するので、正確に制御する必要があった。[Prior Art] Conventionally, when performing processes such as sputtering, etching, or deposition on the surface of a semiconductor wafer, the temperature of the semiconductor wafer during the process greatly affects the process result, so it must be controlled accurately. I needed to.
【０００３】半導体処理装置内で、半導体ウエハーの温
度を測定するには、半導体ウエハーと非接触で測定でき
るのが望ましく、主としてサーモパイル温度計が使用さ
れていた。In order to measure the temperature of a semiconductor wafer in a semiconductor processing apparatus, it is desirable to be able to measure the temperature without contacting the semiconductor wafer, and a thermopile thermometer has mainly been used.
【０００４】0004
【発明が解決しようとする課題】然し乍ら前記サーモパ
イル温度計は、半導体ウエハーの表面から放射される熱
線を多数の熱電対で構成したセンサー部に受けることに
より、温度を計測するものである。然るに、測定対象と
なる半導体ウエハーは、その材質、表面状態等の違いで
熱線の放射率が異るので、前記サーモパイル温度計によ
って、半導体ウエハーの実際の温度を正確に測定できな
い問題点があった。さらに、従来のサーモパイル温度計
による測定は、半導体ウエハーの表面を測定していたの
で、処理中（例えば薄膜堆積中）の温度測定は不可能で
あった。このため、半導体ウエハーの処理中の異常をリ
アルタイムで監視することはできなかった。However, the thermopile thermometer measures temperature by receiving heat rays radiated from the surface of a semiconductor wafer onto a sensor section comprising a large number of thermocouples. However, since the semiconductor wafer to be measured has a different emissivity of heat rays depending on its material, surface condition, etc., there is a problem in that the thermopile thermometer cannot accurately measure the actual temperature of the semiconductor wafer. . Furthermore, measurements using conventional thermopile thermometers measure the surface of the semiconductor wafer, making it impossible to measure temperature during processing (for example, during thin film deposition). For this reason, it has not been possible to monitor abnormalities during processing of semiconductor wafers in real time.
【０００５】この発明の目的は、半導体ウエハーの温度
を監視し乍ら所定の処理が可能な半導体ウエハーの処理
方法および装置を提供することにある。又、この発明の
別の目的は、半導体ウエハーの正確な実際温度を測定で
きる半導体ウエハーの処理方法および装置を提供するこ
とにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a method and apparatus for processing a semiconductor wafer, which can perform predetermined processing while monitoring the temperature of the semiconductor wafer. Another object of the present invention is to provide a semiconductor wafer processing method and apparatus that can accurately measure the actual temperature of a semiconductor wafer.
【０００６】[0006]
【課題を解決する為の手段】この発明の半導体ウエハー
の処理方法は、半導体ウエハーの表面に対して、スパッ
タ、エッチング又はデポジション等の処理を行う方法に
おいて、処理前および処理中に、半導体ウエハーの裏面
から該半導体ウエハーの温度を測定し、予め定めた温度
範囲で処理を行うことを特徴としている。[Means for Solving the Problems] The semiconductor wafer processing method of the present invention is a method for performing sputtering, etching, deposition, or other processing on the surface of a semiconductor wafer. The temperature of the semiconductor wafer is measured from the back side of the semiconductor wafer, and processing is performed within a predetermined temperature range.
【０００７】又この発明の半導体ウエハーの処理装置は
、処理室内にウエハーホルダーが設置され、該ウエハー
ホルダーに支持された半導体ウエハーの表面に対するス
パッタ、エッチング又はデポジション等の処理機構を備
えた半導体処理装置において、前記ウエハーホルダーに
は、半導体ウエハーの裏面を透視可能とする透孔が形成
され、該透孔の軸線上に非接触温度測定手段が、半導体
ウエハーの裏面と対向可能に設置してあることを特徴と
している。Further, the semiconductor wafer processing apparatus of the present invention includes a wafer holder installed in the processing chamber, and is equipped with a processing mechanism for sputtering, etching, or deposition on the surface of the semiconductor wafer supported by the wafer holder. In the apparatus, a through hole is formed in the wafer holder so that the back surface of the semiconductor wafer can be seen through, and a non-contact temperature measuring means is installed on the axis of the through hole so as to be able to face the back surface of the semiconductor wafer. It is characterized by
【０００８】前記非接触温度測定手段は、サーモパイル
温度計とするのが望ましい。半導体ウエハーの放射率の
相異による測定誤差を除く為には、ウエハーホルダーへ
半導体ウエハーを搬送する搬送路に、放射率計を半導体
ウエハーの裏面と対向可能に設置し、該放射率計の出力
をサーモパイル温度計に対して、補正成分として与える
。Preferably, the non-contact temperature measuring means is a thermopile thermometer. In order to eliminate measurement errors due to differences in the emissivity of semiconductor wafers, an emissivity meter is installed on the transport path that transports the semiconductor wafer to the wafer holder so that it can face the back side of the semiconductor wafer, and the output of the emissivity meter is is given as a correction component to the thermopile thermometer.
【０００９】前記放射率計およびサーモパイル温度計は
、半導体ウエハーの処理装置における処理室内の搬送路
に夫々設置される場合のほか、サーモパイル温度計が処
理室内に設置される一方、放射率計が処理室と別個に設
置されたロードロック室など別の室内に設置される場合
もある。The emissivity meter and thermopile thermometer may be installed in the transport path within the processing chamber of a semiconductor wafer processing apparatus, or the thermopile thermometer may be installed within the processing chamber, while the emissivity meter may be installed within the processing chamber. In some cases, it is installed in a separate room, such as a load lock room that is installed separately from the room.
【００１０】0010
【作用】この発明によれば、半導体ウエハーの温度を処
理中も連続して測定することが可能となり、半導体ウエ
ハーに対して所定の処理を所定の条件で行うことかがで
きる。According to the present invention, it is possible to continuously measure the temperature of a semiconductor wafer during processing, and a predetermined process can be performed on a semiconductor wafer under predetermined conditions.
【００１１】又、半導体ウエハーの温度測定は、測定対
象の半導体ウエハーの放射率で補正するようにしたので
、処理中の温度を正確に測定することができる。Furthermore, since the temperature measurement of the semiconductor wafer is corrected using the emissivity of the semiconductor wafer to be measured, the temperature during processing can be accurately measured.
【００１２】0012
【実施例】以下この発明をスパッタ処理装置に実施した
例について、図面を参照して説明する。
ウエハー温度補正
スパッタ処理装置は、図１に示したようにスパッタ
チャンバー１とロードロックチャンバー２を備えており
、両チャンバー間を半導体ウエハー３が搬送路４に沿っ
て搬送されるようになっている。DESCRIPTION OF THE PREFERRED EMBODIMENTS An example in which the present invention is implemented in a sputter processing apparatus will be described below with reference to the drawings. Wafer Temperature Correction The sputter processing apparatus is equipped with a sputter chamber 1 and a load lock chamber 2, as shown in FIG. 1, and a semiconductor wafer 3 is transported between both chambers along a transport path 4. .
【００１３】スパッタチャンバー１内で半導体ウエハー
３を保持するウエハーホルダー５は加熱用のヒータ６お
よび冷却用の冷媒流路（図示していない）を内蔵してい
ると共に、中央に透孔７が穿設され、該透孔７を通して
ウエハーホルダー５の外側に設置したサーモパイル温度
計８で半導体ウエハー３の裏面の温度測定ができるよう
になっている。ウエハーホルダー５に保持された半導体
ウエハー３は、シャッター板９を挟んでカソード１０と
対向するようになっており、ウエハーホルダー５とカソ
ード１０間に電力を投入し、シャッター板９を開くと、
カソード１０よりスパッタされた物質が半導体ウエハー
３の表面に堆積するようになっている。The wafer holder 5 that holds the semiconductor wafer 3 in the sputtering chamber 1 has a built-in heater 6 for heating and a refrigerant channel (not shown) for cooling, and also has a through hole 7 in the center. The temperature of the back surface of the semiconductor wafer 3 can be measured through the through hole 7 with a thermopile thermometer 8 installed outside the wafer holder 5. The semiconductor wafer 3 held by the wafer holder 5 faces a cathode 10 with a shutter plate 9 in between. When power is applied between the wafer holder 5 and the cathode 10 and the shutter plate 9 is opened,
A substance sputtered from the cathode 10 is deposited on the surface of the semiconductor wafer 3.
【００１４】一方、前記ロードロックチャンバー２の半
導体ウエハー３の停止位置（半導体ウエハーの保持部材
は図示していない）には、放射率計１１が半導体ウエハ
ー３と対向するように設置してある。放射率計１１は、
放射率が１である黒体発熱器１２とサーモパイル温度計
１３とで測定される温度から放射率を求めることができ
るものである。放射率計１１をロードロックチャンバー
２内に設置したのは、放射率の測定雰囲気を大気中とす
るよりも真空中とした方が、測定精度が向上する為であ
る。On the other hand, at the stop position of the semiconductor wafer 3 in the load lock chamber 2 (the semiconductor wafer holding member is not shown), an emissivity meter 11 is installed so as to face the semiconductor wafer 3. The emissivity meter 11 is
The emissivity can be determined from the temperature measured by the black body heater 12 and the thermopile thermometer 13, both of which have an emissivity of 1. The reason why the emissivity meter 11 was installed in the load lock chamber 2 is that measurement accuracy is improved when the emissivity is measured in a vacuum rather than in the atmosphere.
【００１５】前記各サーモパイル温度計８、１３の出力
はシーケンサ１４のＡ／Ｄ変換器１５、１６に与えられ
てデジタル変換された後、放射率補正回路１７（一種の
割算回路）に与えられるようになっており、放射率補正
回路１７の出力が、ウエハー実温度表示回路１８に与え
られている。前記放射率補正回路１７の出力は、ウエハ
ーホルダー５のヒータ６に電力を供給するパワーコント
ローラ１９にも制御信号として与えられており、測定し
た半導体ウエハー３の温度に従ってヒータ６に投入され
る電力がコントロールされ、半導体ウエハー３を所定の
温度に調節できるようになっている。半導体ウエハーの
冷却が必要の場合には、自然冷却させたり、冷媒流路へ
冷媒を流して行われる。The outputs of the thermopile thermometers 8 and 13 are applied to A/D converters 15 and 16 of a sequencer 14 for digital conversion, and then applied to an emissivity correction circuit 17 (a type of division circuit). The output of the emissivity correction circuit 17 is given to the wafer actual temperature display circuit 18. The output of the emissivity correction circuit 17 is also given as a control signal to a power controller 19 that supplies power to the heater 6 of the wafer holder 5, and the power input to the heater 6 is adjusted according to the measured temperature of the semiconductor wafer 3. It is controlled so that the temperature of the semiconductor wafer 3 can be adjusted to a predetermined temperature. When the semiconductor wafer needs to be cooled, it may be cooled naturally or by flowing a coolant into a coolant channel.
【００１６】上記実施例によれば、半導体ウエハー３の
温度をスパッタ処理中に連続的に測定することが可能で
あり、又、シーケンサ１４ではスパッタチャンバー１で
、サーモパイル温度計８で測定した半導体ウエハー３の
温度を、ロードロックチャンバー２で予め測定した実際
の半導体ウエハー３の放射率で補正するので、スパッタ
チャンバー１内で処理されている半導体ウエハー３の実
際の温度を正確に求めることができる。
ウエハー温度管理
図２に示すようなセパレーションチャンバー２１に
、ロードロックチャンバー２と複数のスパッタチャンバ
ー１を設置したマルチチャンバシステムでは、前工程（
例えばセパレーションチャンバー２１内でのウエハー加
熱）で半導体ウエハーを予め加熱する。その後でプロセ
スチャンバーであるスパッタチャンバー１に半導体ウエ
ハーを搬送する。スパッタチャンバー１内では処理（薄
膜堆積）を開始する前に処理開始温度を一定にする目的
で待ち時間を設ける。この待ち時間は、スループット（
量産性）を向上するためにはなるべく短縮することが望
ましい。しかし、加熱した半導体ウエハーが搬送の途中
でなんらかの外部の作用（外乱）により温度変動を起す
場合がある。このような半導体ウエハーの温度変動があ
る場合、処理開始の半導体ウエハーの温度がそれぞれの
半導体ウエハーごとに異なり、一様な処理ができなくな
る。たとえば、薄膜堆積の開始温度が異なると、半導体
デバイスの製品異常が発生し、不良品の増加をもたらす
。さらに、半導体ウエハー処理中でも、温度変動がある
と同様に半導体デバイスの製品異常の発生の原因となる
。According to the above embodiment, it is possible to continuously measure the temperature of the semiconductor wafer 3 during the sputtering process, and the sequencer 14 can measure the temperature of the semiconductor wafer 3 measured by the thermopile thermometer 8 in the sputter chamber 1. 3 is corrected by the emissivity of the actual semiconductor wafer 3 measured in advance in the load lock chamber 2, so the actual temperature of the semiconductor wafer 3 being processed in the sputter chamber 1 can be accurately determined. Wafer temperature management In a multi-chamber system in which a load-lock chamber 2 and a plurality of sputter chambers 1 are installed in a separation chamber 21 as shown in FIG.
For example, the semiconductor wafer is preheated by heating the wafer within the separation chamber 21. Thereafter, the semiconductor wafer is transferred to a sputtering chamber 1 which is a process chamber. In the sputter chamber 1, a waiting time is provided for the purpose of keeping the process start temperature constant before starting the process (thin film deposition). This waiting time is equal to the throughput (
In order to improve mass productivity, it is desirable to shorten the time as much as possible. However, during transportation of the heated semiconductor wafer, temperature fluctuations may occur due to some external action (disturbance). When there is such a temperature fluctuation of the semiconductor wafer, the temperature of the semiconductor wafer at the start of processing differs for each semiconductor wafer, making it impossible to perform uniform processing. For example, if the starting temperatures of thin film deposition differ, product abnormalities occur in semiconductor devices, leading to an increase in the number of defective products. Furthermore, even during semiconductor wafer processing, temperature fluctuations can similarly cause product abnormalities in semiconductor devices.
【００１７】そこで、図３に示すように、図１に示した
実施例の放射率補正回路１７の出力に処理開始温度管理
機構２２および温度幅管理機構２３を接続し、これらの
機構でスパッター制御装置（図示していない）を制御す
るようにする。Therefore, as shown in FIG. 3, a process start temperature control mechanism 22 and a temperature range control mechanism 23 are connected to the output of the emissivity correction circuit 17 of the embodiment shown in FIG. to control a device (not shown).
【００１８】処理開始温度管理機構は、設定電圧と半導
体ウエハーの温度に対応した電圧を比較する回路からな
り、予め設定した温度になるまで待ち時間を自動的に制
御する機能を有している。温度幅管理機構は、設定電圧
と半導体ウエハーの温度に対応した電圧を比較する回路
が２つで構成され、予め上限温度、下限温度を設定して
おき、上限温度と下限温度の範囲内に温度が保持できる
制御機能を有している。The processing start temperature control mechanism includes a circuit that compares a set voltage with a voltage corresponding to the temperature of the semiconductor wafer, and has a function of automatically controlling the waiting time until a preset temperature is reached. The temperature range control mechanism consists of two circuits that compare the set voltage and the voltage corresponding to the temperature of the semiconductor wafer.The upper temperature limit and lower limit temperature are set in advance, and the temperature range is set within the range of the upper and lower temperature limits. It has a control function that can be maintained.
【００１９】半導体ウエハー処理中の温度監視の手順を
図４を用いて説明する。加熱された半導体ウエハーがス
パッタチャンバー１内に搬送され、チャッキングされる
（１）。そこから半導体ウエハーの温度モニターを開始
する（２）。第１図の実施例と同様の温度測定装置によ
りウエハー温度を測定し、実温に補正する。その温度が
処理開始温度管理機構２２に予め設定した温度からはず
れていたときは、温度を制御して設定温度に温度制御す
る（３） 。制御方法は、もし半導体ウエハーの温度が
開始温度として設定した温度より高ければ、図５（ａ）
、（ｂ） のように冷却を行う。その間、温度は連続
的に測定できるので、開始温度に達した時点で処理を開
始する。反対に、ウエハー温度が開始温度として設定し
た温度より低ければ、図５（ｃ） ように加熱を行う。
その間、同様に半導体ウエハーの温度を連続的に測定す
る。この場合、ランプ加熱式ガス加熱ホルダー（実願平
２−３７８９０号）を併用すれば、加熱温度を正確に制
御できるので、短時間に所定の開始温度に達することが
できる。The procedure for temperature monitoring during semiconductor wafer processing will be explained with reference to FIG. A heated semiconductor wafer is transported into a sputtering chamber 1 and chucked (1). From there, temperature monitoring of the semiconductor wafer begins (2). The wafer temperature is measured using a temperature measuring device similar to that of the embodiment shown in FIG. 1, and corrected to the actual temperature. If the temperature deviates from the temperature preset in the process start temperature control mechanism 22, the temperature is controlled to the set temperature (3). The control method is that if the temperature of the semiconductor wafer is higher than the temperature set as the starting temperature,
, (b). During this time, the temperature can be measured continuously, and the process is started when the starting temperature is reached. On the other hand, if the wafer temperature is lower than the temperature set as the starting temperature, heating is performed as shown in FIG. 5(c). During this time, the temperature of the semiconductor wafer is also continuously measured. In this case, if a lamp heating type gas heating holder (Utility Application No. 2-37890) is used, the heating temperature can be controlled accurately, so that the predetermined starting temperature can be reached in a short time.
【００２０】このように、加熱・冷却しても温度変化を
連続的に測定でき、かつ正確な温度が測定できるので温
度設定は短時間に行える。[0020] In this way, temperature changes can be continuously measured even during heating and cooling, and the temperature can be measured accurately, so temperature setting can be done in a short time.
【００２１】次に、所定の開始温度に到達したならば、
半導体ウエハーの処理を開始する（４） 。半導体ウエ
ハーが処理される面の裏面を測定しているため、処理中
の半導体ウエハー温度が逐次連続的に測定できる。ここ
で、温度幅管理機構２３により、半導体ウエハーの温度
が上限温度と下限温度の範囲内にあるかどうか逐次監視
される（５） 。もし、この温度範囲から半導体ウエハ
ーの温度がはずれたならば、警報を鳴らすことにより作
業者に異常を知らせることができる（６） 。この場合
、実際に何が原因となって温度範囲がずれているのか知
りえないので、パワーコントローラ１９で半導体ウエハ
ーの温度を制御するよりも、装置そのものを停止した方
がよい。もし、このような警報がなければ、継続して処
理が進められる（７） 。もちろん、装置の停止に代え
て、処理中のウエハーの温度を調節しても良い。ウエハ
ーの温度調節は、半導体ウエハーの実温度の情報が与え
られるパワーコントローラ１９とクーラントコントロー
ラ２４でウエハーホルダー５の温度を制御することによ
り行われる。Next, once the predetermined starting temperature is reached,
Start processing the semiconductor wafer (4). Since the back side of the semiconductor wafer is being measured, the temperature of the semiconductor wafer during processing can be measured successively and continuously. Here, the temperature range management mechanism 23 sequentially monitors whether the temperature of the semiconductor wafer is within the range of the upper limit temperature and the lower limit temperature (5). If the temperature of the semiconductor wafer deviates from this temperature range, an alarm can be sounded to notify the operator of the abnormality (6). In this case, it is not possible to know what is actually causing the deviation in the temperature range, so it is better to stop the apparatus itself rather than controlling the temperature of the semiconductor wafer with the power controller 19. If there is no such alarm, processing continues (7). Of course, instead of stopping the apparatus, the temperature of the wafer during processing may be adjusted. The temperature of the wafer is adjusted by controlling the temperature of the wafer holder 5 using a power controller 19 and a coolant controller 24, which are provided with information on the actual temperature of the semiconductor wafer.
【００２２】図６は複数の半導体ウエハーを一枚ずつ処
理した場合の半導体ウエハーの温度データである。図中
のａ点で半導体ウエハーがウエハーホルダー５にセット
され、ｂ点からｃ点の間でスパッタによる薄膜堆積が行
われ、ｃ点で半導体ウエハーがウエハーホルダー５から
取り出されたものである。各半導体ウエハー共、許容さ
れた温度幅の範囲で処理を行うことができた。FIG. 6 shows temperature data of semiconductor wafers when a plurality of semiconductor wafers are processed one by one. A semiconductor wafer is set on the wafer holder 5 at point a in the figure, thin film deposition is performed by sputtering between points b and c, and the semiconductor wafer is taken out from the wafer holder 5 at point c. Each semiconductor wafer could be processed within the allowed temperature range.
【００２３】以上、半導体ウエハーのスパッタ処理を例
として実施例を説明したが、エッチングや蒸着等その他
の処理でもこの発明を実施することが可能である。Although the embodiments have been described above using the sputtering process of semiconductor wafers as an example, the present invention can also be practiced in other processes such as etching and vapor deposition.
【００２４】[0024]
【発明の効果】以上に説明したようにこの発明によれば
、半導体ウエハー表面の放射率を測定し、サーモパイル
温度計の測定値を補正したので、スパッタ、エッチング
、デポジション等の処理対象である半導体ウエハーの温
度を非接触で測定できると共に、実際の温度を正確に測
定できる効果がある。然して処理中の半導体ウエハーの
温度を正確にコントロールすることも可能となり、所期
の処理を正しく行える効果がある。更に、半導体ウエハ
ーの処理開始の温度や、処理中の温度を監視できるので
一定の条件で多数の半導体ウエハーを処理できる効果が
ある。[Effects of the Invention] As explained above, according to the present invention, the emissivity of the semiconductor wafer surface is measured and the measured value of the thermopile thermometer is corrected, so that it can be used for processing such as sputtering, etching, and deposition. It has the effect of not only being able to measure the temperature of a semiconductor wafer without contact, but also being able to accurately measure the actual temperature. However, it is also possible to accurately control the temperature of the semiconductor wafer during processing, which has the effect of correctly performing the intended processing. Furthermore, since the temperature at the start of semiconductor wafer processing and the temperature during processing can be monitored, it is possible to process a large number of semiconductor wafers under constant conditions.
【図１】この発明の実施例のブロック図である。FIG. 1 is a block diagram of an embodiment of the invention.
【図２】この発明の他の実施例のマルチチャンバーシス
テムの平面図である。FIG. 2 is a plan view of a multi-chamber system according to another embodiment of the invention.
【図３】処理開始温度管理機構と温度幅管理機構の実施
例のブロック図である。FIG. 3 is a block diagram of an embodiment of a process start temperature management mechanism and a temperature range management mechanism.
【図４】実施例の動作を説明するフローチャートである
。FIG. 4 is a flowchart illustrating the operation of the embodiment.
【図５】（ａ） 、（ｂ） 、（Ｃ） は半導体ウエハ
ーの処理開始温度に至る種々の例を表わすグラフである
。FIGS. 5(a), 5(b), and 5(c) are graphs representing various examples leading to the processing start temperature of a semiconductor wafer.
【図６】実施例で処理した複数の半導体ウエハーの温度
測定データのグラフである。FIG. 6 is a graph of temperature measurement data of a plurality of semiconductor wafers processed in Examples.
１ スパッタチャンバー ２ ロードロックチャンバー ３ 半導体ウエハー ４ 搬送路 ５ ウエハーホルダー ６ ヒータ ７ 透孔 ８ サーモパイル温度計 １１ 放射率計 １２ 黒体発熱器 １３ サーモパイル温度計 １４ シーケンサ １５ Ａ／Ｄ変換器 １６ Ａ／Ｄ変換器 １７ 放射率補正回路 １８ ウエハー実温度表示回路 １９ パワーコントローラ ２２ 処理開始温度管理機構 ２３ 温度幅管理機構 1 Sputter chamber 2 Load lock chamber 3 Semiconductor wafer 4 Conveyance path 5 Wafer holder 6 Heater 7 Through hole 8 Thermopile thermometer 11 Emissivity meter 12 Black body heating element 13 Thermopile thermometer 14 Sequencer 15 A/D converter 16 A/D converter 17 Emissivity correction circuit 18 Wafer actual temperature display circuit 19 Power controller 22 Processing start temperature control mechanism 23 Temperature range control mechanism
Claims (1)
ッタ、エッチング、又はデポジション等の処理を行う方
法において、処理前および処理中に半導体ウエハーの裏
面から該半導体ウエハーの温度を測定し、予め定めた温
度範囲で処理を行うことを特徴とする半導体ウエハーの
処理方法 【請求項２】 半導体ウエハーの温度測定は、サーモ
パイル温度計を用いて無接触で行う請求項１記載の半導
体ウエハーの処理方法 【請求項３】 サーモパイル温度計を用いた温度測定
は、半導体ウエハーの放射率で補正する請求項２記載の
半導体ウエハーの処理方法 【請求項４】 半導体ウエハーの測定した温度と、予
め定めた処理開始温度を比較し、予め定めた処理開始温
度に到達した時、半導体ウエハーの処理を開始する請求
項１記載の半導体ウエハーの処理方法 【請求項５】 半導体ウエハーの測定した温度と、予
め定めた処理中の上限温度および下限温度を比較し、前
記上限温度と下限温度の温度範囲から外れた時、警報を
発し、又は半導体ウエハーの処理を停止する請求項１記
載の半導体ウエハーの処理方法 【請求項６】 処理室内にウエハーホルダーが設置さ
れ、該ウエハーホルダーに支持された半導体ウエハーの
表面に対するスパッタ、エッチング、又はデポジション
等の処理機構を備えた半導体処理装置において、前記ウ
エハーホルダーには半導体ウエハーの裏面を透視可能と
する透孔が形成され、該透孔の軸線上に非接触温度測定
手段が半導体ウエハーの裏面と対向可能に設置してある
ことを特徴とする半導体ウエハーの処理装置【請求項７
】 非接触温度測定手段は、サーモパイル温度計とし
た請求項６記載の半導体ウエハーの処理装置【請求項８
】 ウエハーホルダーには、加熱手段および／または
冷却手段が設けてある請求項６記載の半導体ウエハーの
処理装置 【請求項９】 ウエハーホルダーへ半導体ウエハーを
搬送する搬送路に、放射率計が半導体ウエハーの裏面と
対向可能に設置してあり、該放射率計の出力がサーモパ
イル温度計に補正成分として与えてある請求項６記載の
半導体ウエハーの処理装置 【請求項１０】 非接触温度測定手段の出力は、ウエ
ハーホルダーの加熱および／または冷却手段の制御装置
に制御入力として与えてある請求項６記載の半導体ウエ
ハーの処理装置 【請求項１１】 非接触温度測定手段の出力は、半導
体ウエハーの処理開始指令手段の入力として与えられて
いる請求項６記載の半導体ウエハーの処理装置【請求項
１２】 非接触温度測定手段の出力は、半導体ウエハ
ーの温度幅管理手段の入力として与えられている請求項
６記載の半導体ウエハーの処理装置【請求項１３】
非接触温度測定手段の出力は、警報装置の入力として与
えられている請求項６記載の半導体ウエハーの処理装置[Scope of Claims] [Claim 1] In a method of performing processing such as sputtering, etching, or deposition on the surface of a semiconductor wafer, the temperature of the semiconductor wafer is controlled from the back surface of the semiconductor wafer before and during the processing. 2. A method for processing a semiconductor wafer, characterized in that the temperature of the semiconductor wafer is measured in a predetermined temperature range.Claim 2: The method according to claim 1, wherein the temperature of the semiconductor wafer is measured without contact using a thermopile thermometer. A method for processing a semiconductor wafer.Claim 3: A method for processing a semiconductor wafer according to claim 2, wherein the temperature measurement using a thermopile thermometer is corrected by the emissivity of the semiconductor wafer.Claim 4: A method for processing a semiconductor wafer according to claim 2, wherein the temperature measured using a thermopile thermometer is corrected by the emissivity of the semiconductor wafer. The method for processing a semiconductor wafer according to claim 1, wherein the processing start temperature is compared with a predetermined processing start temperature, and when the predetermined processing start temperature is reached, the processing of the semiconductor wafer is started.Claim 5: The measured temperature of the semiconductor wafer. 2. The semiconductor wafer according to claim 1, wherein a predetermined upper limit temperature and a lower limit temperature during processing are compared, and when the temperature falls outside the temperature range of the upper limit temperature and the lower limit temperature, an alarm is issued or the processing of the semiconductor wafer is stopped. 6. A semiconductor processing apparatus comprising a wafer holder installed in a processing chamber and a processing mechanism for performing sputtering, etching, or deposition on the surface of a semiconductor wafer supported by the wafer holder, wherein the wafer is A semiconductor wafer characterized in that a through hole is formed in the holder so that the back surface of the semiconductor wafer can be seen through, and a non-contact temperature measuring means is installed on the axis of the through hole so as to be able to face the back surface of the semiconductor wafer. A processing device [Claim 7
] The semiconductor wafer processing apparatus according to claim 6, wherein the non-contact temperature measuring means is a thermopile thermometer.[Claim 8]
10. The semiconductor wafer processing apparatus according to claim 6, wherein the wafer holder is provided with heating means and/or cooling means. The semiconductor wafer processing apparatus according to claim 6, wherein the emissivity meter is installed so as to be able to face the back surface of the thermopile thermometer, and the output of the emissivity meter is provided as a correction component to the thermopile thermometer.Claim 10: The output of the non-contact temperature measuring means. The semiconductor wafer processing apparatus according to claim 6, wherein: is given as a control input to a control device for heating and/or cooling means of the wafer holder.Claim 11: The output of the non-contact temperature measuring means is used to control the start of semiconductor wafer processing. A semiconductor wafer processing apparatus according to claim 6, wherein the output of the non-contact temperature measuring means is provided as an input to the semiconductor wafer temperature range management means. A semiconductor wafer processing apparatus according to claim 13.
7. The semiconductor wafer processing apparatus according to claim 6, wherein the output of the non-contact temperature measuring means is given as an input to an alarm device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3103195A JP2939771B2 (en) | 1990-04-09 | 1991-04-08 | Semiconductor wafer processing method and apparatus |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3789190 | 1990-04-09 | ||
| JP2-37891 | 1990-04-09 | ||
| JP3103195A JP2939771B2 (en) | 1990-04-09 | 1991-04-08 | Semiconductor wafer processing method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04297054A true JPH04297054A (en) | 1992-10-21 |
| JP2939771B2 JP2939771B2 (en) | 1999-08-25 |
Family
ID=26377055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3103195A Expired - Lifetime JP2939771B2 (en) | 1990-04-09 | 1991-04-08 | Semiconductor wafer processing method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2939771B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6549392B1 (en) | 1998-06-18 | 2003-04-15 | Ngk Insulators, Ltd. | Method for reducing particles from an electrostatic chuck and an equipment for manufacturing a semiconductor |
| WO2005029020A1 (en) * | 2003-09-24 | 2005-03-31 | Hitachi Kokusai Electric Inc. | Substrate processing device and device producing method |
| US6975497B2 (en) | 1998-07-06 | 2005-12-13 | Ngk Insulators, Ltd. | Method for reducing particles from an electrostatic chuck and an equipment for manufacturing a semiconductor |
| CN111373520A (en) * | 2017-11-28 | 2020-07-03 | 瑞士艾发科技 | Substrate processing apparatus and method of processing substrate and manufacturing processed workpiece |
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|---|---|---|---|---|
| JPS4871688A (en) * | 1971-12-27 | 1973-09-27 | ||
| JPS62118519A (en) * | 1985-11-19 | 1987-05-29 | Mitsubishi Electric Corp | Semiconductor substrate heating device |
| JPH01268120A (en) * | 1988-04-20 | 1989-10-25 | Fujitsu Ltd | Temperature measurement for semiconductor device wafer |
| JPH03165514A (en) * | 1989-11-24 | 1991-07-17 | Fujitsu Ltd | Manufacture of semiconductor device and manufacture device thereof |
| JPH04183862A (en) * | 1990-11-17 | 1992-06-30 | Miyagi Oki Denki Kk | Heater of base plate |
| JPH04226047A (en) * | 1990-04-19 | 1992-08-14 | Applied Materials Inc | Heating and monitoring system of wafer and its operating method |
-
1991
- 1991-04-08 JP JP3103195A patent/JP2939771B2/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4871688A (en) * | 1971-12-27 | 1973-09-27 | ||
| JPS62118519A (en) * | 1985-11-19 | 1987-05-29 | Mitsubishi Electric Corp | Semiconductor substrate heating device |
| JPH01268120A (en) * | 1988-04-20 | 1989-10-25 | Fujitsu Ltd | Temperature measurement for semiconductor device wafer |
| JPH03165514A (en) * | 1989-11-24 | 1991-07-17 | Fujitsu Ltd | Manufacture of semiconductor device and manufacture device thereof |
| JPH04226047A (en) * | 1990-04-19 | 1992-08-14 | Applied Materials Inc | Heating and monitoring system of wafer and its operating method |
| JPH04183862A (en) * | 1990-11-17 | 1992-06-30 | Miyagi Oki Denki Kk | Heater of base plate |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6549392B1 (en) | 1998-06-18 | 2003-04-15 | Ngk Insulators, Ltd. | Method for reducing particles from an electrostatic chuck and an equipment for manufacturing a semiconductor |
| US6975497B2 (en) | 1998-07-06 | 2005-12-13 | Ngk Insulators, Ltd. | Method for reducing particles from an electrostatic chuck and an equipment for manufacturing a semiconductor |
| WO2005029020A1 (en) * | 2003-09-24 | 2005-03-31 | Hitachi Kokusai Electric Inc. | Substrate processing device and device producing method |
| CN111373520A (en) * | 2017-11-28 | 2020-07-03 | 瑞士艾发科技 | Substrate processing apparatus and method of processing substrate and manufacturing processed workpiece |
| JP2021504958A (en) * | 2017-11-28 | 2021-02-15 | エヴァテック・アーゲー | Substrate processing equipment, method of processing substrates and method of manufacturing processed products |
| CN111373520B (en) * | 2017-11-28 | 2023-08-29 | 瑞士艾发科技 | Substrate processing apparatus and method of processing substrate and manufacturing processed workpiece |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2939771B2 (en) | 1999-08-25 |
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