JPH0837158A - Method and apparatus for heat treatment of substrate - Google Patents
Method and apparatus for heat treatment of substrateInfo
- Publication number
- JPH0837158A JPH0837158A JP19178894A JP19178894A JPH0837158A JP H0837158 A JPH0837158 A JP H0837158A JP 19178894 A JP19178894 A JP 19178894A JP 19178894 A JP19178894 A JP 19178894A JP H0837158 A JPH0837158 A JP H0837158A
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- Prior art keywords
- heat treatment
- substrate
- treatment furnace
- temperature
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、例えばランプアニー
ル装置やＣＶＤ装置などを使用し、熱処理炉内に基板を
１枚ずつ収容して基板を加熱し、基板に対しアニール、
酸窒化、成膜等の熱処理を施す基板の熱処理方法、並び
に、その方法を実施するために使用される熱処理装置に
関し、特に、熱処理炉内を予備加熱するための技術に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention uses, for example, a lamp annealing device or a CVD device to house one substrate in a heat treatment furnace and heat the substrate to anneal the substrate.
The present invention relates to a substrate heat treatment method for performing heat treatment such as oxynitriding and film formation, and a heat treatment apparatus used for implementing the method, and particularly to a technique for preheating the inside of a heat treatment furnace.
【０００２】[0002]
【従来の技術】扁平状に形成された熱処理炉内へ、その
一側面に形成された開口を通して基板を１枚ずつ搬入
し、蓋体によって開口を閉塞した後、熱処理炉内に収容
された基板に対し、熱処理炉内に活性又は不活性なガス
を導入してアニール、酸窒化、成膜、その他の各種熱処
理を施すようにした枚葉式の基板の熱処理装置において
は、１枚目の基板から熱処理品質の繰返し再現性が得ら
れるようにするため、１枚目の基板を熱処理炉内へ搬入
する前に熱処理炉内を予備加熱して熱処理炉を熱的に安
定させるようにしている。この予備加熱の方法として、
従来は、ダミー基板を使用し、熱処理炉内にダミー基板
を収容した状態で、実際に基板を熱処理するときの加熱
プログラムに従ってダミー基板を加熱し、その熱処理サ
イクルを数回繰り返すようにしていた。また、例えば特
公平２−３０１７９号公報には、熱処理炉内を実際の加
熱プログラムに従うなどして加熱し、炉内温度を第１設
定温度以上に一旦上昇させ、ピーク温度を経た後、第２
設定温度以下に降温させ、その加熱サイクルを少なくと
も２回繰り返し、各加熱サイクルにおいて、炉内温度の
昇温時における第１設定温度通過時点から炉内温度の降
温時における第２設定温度通過時点までに要する時間を
計測し、それらの計測時間の差の絶対値が所定値以内に
なった時点をもって予備加熱を終了するようにする熱処
理方法が開示されている。2. Description of the Prior Art Substrates are loaded into a flat heat treatment furnace one by one through an opening formed in one side surface of the heat treatment furnace, the openings are closed by a lid, and then the substrates are accommodated in the heat treatment furnace. On the other hand, in the single-wafer-type substrate heat treatment apparatus in which an active or inactive gas is introduced into the heat treatment furnace to perform annealing, oxynitridation, film formation, and various other heat treatments, the first substrate In order to obtain repetitive reproducibility of heat treatment quality, the inside of the heat treatment furnace is preheated before the first substrate is carried into the heat treatment furnace to thermally stabilize the heat treatment furnace. As a method of this preheating,
Conventionally, a dummy substrate is used, the dummy substrate is housed in a heat treatment furnace, and the dummy substrate is heated according to a heating program for actual heat treatment of the substrate, and the heat treatment cycle is repeated several times. Further, for example, in Japanese Examined Patent Publication No. 2-30179, the inside of the heat treatment furnace is heated according to an actual heating program, the temperature inside the furnace is once raised above the first set temperature, and after the peak temperature is passed, the second
The temperature is lowered below the set temperature, and the heating cycle is repeated at least twice, and in each heating cycle, from the time when the first set temperature passes when the temperature in the furnace rises to the time when the second set temperature passes when the temperature drops in the furnace. There is disclosed a heat treatment method in which the time required for the measurement is measured, and the preheating is terminated when the absolute value of the difference between the measurement times falls within a predetermined value.
【０００３】[0003]
【発明が解決しようとする課題】熱処理炉内にダミー基
板を収容し実際の加熱プログラムに従ってダミー基板を
加熱する熱処理サイクルを数回繰り返して熱処理炉内を
予備加熱する方法では、熱処理サイクルの繰返し回数を
オペレータが決定するようにしている。従って、予備加
熱の終了時点の判断は、オペレータの経験と勘に頼るこ
ととなる。このため、予備加熱の程度に過不足が生じ、
その結果、予備加熱後において最初に熱処理した１枚目
或いは数枚の基板の熱処理品質に再現性が得られない、
といったことが起こる心配もある。In the method of preheating the inside of the heat treatment furnace by repeating the heat treatment cycle of accommodating the dummy substrate in the heat treatment furnace and heating the dummy substrate according to the actual heating program, the number of times of the heat treatment cycle is repeated. Is decided by the operator. Therefore, the judgment of the end point of the preheating depends on the experience and intuition of the operator. For this reason, excess or deficiency occurs in the degree of preheating,
As a result, the reproducibility of the heat treatment quality of the first or several substrates that have been first heat-treated after preheating cannot be obtained.
There is a concern that such things will happen.
【０００４】また、特公平２−３０１７９号公報に記載
されているような方法は、予備加熱工程では単に熱処理
炉内を加熱するだけでダミー基板を熱処理したりはしな
い。このため、予備加熱後において、予備加熱で基板
（ダミー基板）を熱処理せずに１枚目の基板を熱処理し
たときと、１枚目の基板を熱処理した後に２枚目以降の
基板を熱処理したときとで処理品質の再現性が十分に得
られないことがある。特に、実際の熱処理では、基板を
プログラム加熱した後に熱処理炉内を降温させる過程で
熱処理炉の一側面を開口させて熱処理後の基板を熱処理
炉内から搬出し、その基板搬出後に熱処理炉内の温度が
所定温度になった時点で、次に熱処理しようとする基板
を熱処理炉内へ搬入するようにするが、上記公報に記載
されたような予備加熱方法によった場合には、一応予備
加熱終了の条件を満たしていても、予備加熱後に１枚目
の基板を熱処理炉内へ搬入する時の炉内状態と、１枚目
の基板を熱処理して熱処理炉内から搬出した後に２枚目
以降の基板を熱処理炉内へ搬入するときの炉内状態との
間に差を生じるといったことがある。この結果、１枚目
の基板と２枚目以降の基板とで熱処理品質に十分な再現
性が得られない、といった問題点がある。Further, in the method described in Japanese Patent Publication No. 2-30179, the dummy substrate is merely heated in the preheating step, and the dummy substrate is not heat-treated. Therefore, after the preliminary heating, the first substrate is heat-treated without heat-treating the substrate (dummy substrate) by the preliminary heating, and the second and subsequent substrates are heat-treated after the first substrate is heat-treated. In some cases, sufficient reproducibility of processing quality cannot be obtained. In particular, in the actual heat treatment, one side surface of the heat treatment furnace is opened in the process of lowering the temperature inside the heat treatment furnace after the substrate is program-heated, and the substrate after heat treatment is carried out from the heat treatment furnace, and after the substrate is carried out, When the temperature reaches a predetermined temperature, the substrate to be heat treated next is carried into the heat treatment furnace. However, when the preheating method as described in the above publication is used, the preliminary heating is temporarily performed. Even if the conditions for termination are met, the furnace condition when the first substrate is loaded into the heat treatment furnace after preheating and the second substrate after the first substrate is heat treated and removed from the heat treatment furnace A difference may occur between the subsequent substrate and the state inside the furnace when the substrate is carried into the heat treatment furnace. As a result, there is a problem that sufficient reproducibility of heat treatment quality cannot be obtained between the first substrate and the second and subsequent substrates.
【０００５】この発明は、以上のような事情に鑑みてな
されたものであり、被処理基板を熱処理炉内へ搬入する
前において熱処理炉内の予備加熱を過不足無く行なうこ
とができ、予備加熱を終了して１枚目の被処理基板を熱
処理炉内へ搬入する時に炉内を熱的にほぼ完全に安定さ
せることができ、１枚目の基板と２枚目以降の基板とに
おいて熱処理品質に良好な再現性が得られるような基板
の熱処理方法を提供すること、並びに、その方法を好適
に実施することができる基板の熱処理装置を提供するこ
とを目的とする。The present invention has been made in view of the above circumstances, and the preheating in the heat treatment furnace can be performed without excess or deficiency before the substrate to be processed is loaded into the heat treatment furnace. When the first substrate to be processed is loaded into the heat treatment furnace after completion of the heat treatment, the inside of the furnace can be thermally stabilized almost completely, and the heat treatment quality of the first substrate and the second and subsequent substrates can be improved. It is an object of the present invention to provide a method for heat treatment of a substrate that can obtain excellent reproducibility, and an apparatus for heat treatment of a substrate that can suitably implement the method.
【０００６】[0006]
【課題を解決するための手段】この発明では、１枚目の
被処理基板を熱処理炉内へ搬入する前に、次のような方
法で予備加熱並びにその終了時点の判定を行なうように
した。すなわち、熱処理炉内の温度が一定の搬入温度に
なった時点でダミー基板を熱処理炉内へ搬入し、熱処理
炉内に収容されたダミー基板を一定の加熱プログラムに
より加熱し、加熱が終了したダミー基板を熱処理炉内か
ら搬出し、以上の熱処理炉内へのダミー基板の搬入から
熱処理炉内からのダミー基板の搬出までの一連の単位工
程を少なくとも２回繰り返すようにする。そして、熱処
理炉内へのダミー基板の搬入時点から、熱処理炉内から
のダミー基板の搬出後に熱処理炉内の温度が前記搬入温
度になった時点までの時間を計測し、各単位工程におけ
る計測時間の差を算出し、その差が所定値以内になった
時に予備加熱を終了するようにする。According to the present invention, before the first substrate to be processed is loaded into the heat treatment furnace, the preheating and the end point of the preheating are determined by the following method. That is, when the temperature in the heat treatment furnace reaches a certain temperature, the dummy substrate is carried into the heat treatment furnace, the dummy substrate accommodated in the heat treatment furnace is heated by a certain heating program, and the dummy after heating is finished. The substrate is unloaded from the heat treatment furnace, and the series of unit steps from the loading of the dummy substrate into the heat treatment furnace to the unloading of the dummy substrate from the heat treatment furnace are repeated at least twice. Then, the time from the time when the dummy substrate is carried into the heat treatment furnace to the time when the temperature inside the heat treatment furnace reaches the carry-in temperature after the dummy substrate is carried out from the heat treatment furnace, and the measurement time in each unit process is measured. Is calculated, and when the difference is within a predetermined value, preheating is finished.
【０００７】上記方法において、ダミー基板を２枚使用
し、それらのダミー基板を交互に熱処理炉内へ搬入して
加熱するとよい。また、さらに、各単位工程における計
測時間の差の算出を同じダミー基板について行なうよう
にするとよい。In the above method, it is preferable that two dummy substrates are used and the dummy substrates are alternately loaded into the heat treatment furnace and heated. Furthermore, it is preferable that the difference in measurement time in each unit process is calculated for the same dummy substrate.
【０００８】また、上記方法を実施する熱処理装置を、
熱処理炉、基板保持・搬出入手段、加熱手段、計測手段
及び加熱制御手段などを備えた従来の装置構成に以下の
ような構成要素を付加して構成した。すなわち、この発
明に係る熱処理装置には、ダミー基板を収納する基板収
納部と、この収納部に収納されたダミー基板を前記基板
保持・搬出入手段へ移載する基板移載手段と、ダミー基
板を前記熱処理炉内へ搬入する搬入温度を指定する搬入
温度指定手段と、前記測温手段によって測定された熱処
理炉内の温度が、前記搬入温度指定手段によって指定さ
れた搬入温度になったことを判別する温度判別手段と、
この温度判別手段によって熱処理炉内の温度が一定の搬
入温度になったことが判別された時点でダミー基板を熱
処理炉内へ搬入するように前記基板保持・搬出入手段を
制御する基板搬入制御手段と、熱処理炉内へのダミー基
板の搬入時点から、熱処理炉内からのダミー基板の搬出
後に熱処理炉内の温度が前記搬入温度になった時点まで
の時間を計測する計時手段と、この計時手段によって計
測された計測時間を記憶する記憶手段と、前記計時手段
によって新たに計測された計測時間と前記記憶手段に記
憶された先の計測時間との差を算出し、その差が所定値
以内であるかどうかを判別する時間判別手段と、この時
間判別手段によって計測時間の差が所定値以内になった
ことが判別された時点で予備加熱を終了させる予備加熱
終了制御手段とが設けられている。Further, a heat treatment apparatus for carrying out the above method is
The following components were added to the conventional apparatus configuration including a heat treatment furnace, substrate holding / loading / unloading means, heating means, measuring means, and heating control means. That is, in the heat treatment apparatus according to the present invention, a substrate housing portion for housing a dummy substrate, a substrate transfer means for transferring the dummy substrate housed in the housing portion to the substrate holding / carrying-in / out means, and a dummy substrate That the temperature inside the heat treatment furnace measured by the temperature measuring means has reached the carry-in temperature designated by the carry-in temperature designating means. Temperature determining means for determining,
Substrate loading control means for controlling the substrate holding and loading / unloading means so that the dummy substrate is loaded into the heat treatment furnace when it is determined by the temperature determination means that the temperature in the heat treatment furnace has reached a constant loading temperature. And a time measuring means for measuring the time from the time when the dummy substrate is loaded into the heat treatment furnace to the time when the temperature in the heat processing furnace reaches the loading temperature after the dummy substrate is unloaded from the heat treatment furnace. The storage means for storing the measurement time measured by, and the difference between the measurement time newly measured by the clock means and the previous measurement time stored in the storage means is calculated, and the difference is within a predetermined value. There is a time discriminating means for discriminating whether or not there is, and a preheating end control means for terminating the preheating when the time discriminating means discriminates that the difference between the measurement times is within a predetermined value. It has been kicked.
【０００９】上記した構成の装置において、上記基板収
納部を２つ設けて２枚のダミー基板を収納可能とし、そ
れら２枚のダミー基板を交互に熱処理炉内へ搬入して加
熱するように上記基板移載手段を制御する基板移載制御
手段を設けるよう構成するとよい。また、さらに、上記
時間判別手段により、同じダミー基板について計測時間
の差を算出するように構成するとよい。In the apparatus having the above-mentioned structure, the two substrate storage sections are provided so that two dummy substrates can be stored, and the two dummy substrates are alternately loaded into the heat treatment furnace and heated. Substrate transfer control means for controlling the substrate transfer means may be provided. Further, it is preferable that the time discriminating means calculates the difference in measurement time for the same dummy substrate.
【００１０】上記した温度判別手段、基板搬入制御手
段、計時手段、記憶手段、時間判別手段及び予備加熱終
了制御手段や基板移載制御手段は、それらをマイクロコ
ンピュータで構成することができる。The above-mentioned temperature discriminating means, substrate loading control means, time measuring means, storage means, time discriminating means, preheating end control means and substrate transfer control means can be constituted by a microcomputer.
【００１１】さらに、加熱されたダミー基板を冷却する
ダミー基板冷却機構を設けるよう構成するとよい。Further, a dummy substrate cooling mechanism for cooling the heated dummy substrate may be provided.
【００１２】また、ダミー基板の加熱の停止時点から、
炉内の温度が一定の搬入温度になった時点までの時間を
計測し、その計測時間に基づいて、予備加熱を終了させ
るように構成してもよい。From the time when the heating of the dummy substrate is stopped,
The time until the temperature in the furnace reaches a constant temperature may be measured, and the preheating may be terminated based on the measured time.
【００１３】[0013]
【作用】上記した基板の熱処理方法によれば、また、上
記構成の装置を使用して基板の熱処理を行なう場合にお
いては、被処理基板が熱処理炉内へ搬入される前に、熱
処理炉内の温度が一定の搬入温度になった時点でダミー
基板が熱処理炉内へ搬入され、そのダミー基板が一定の
加熱プログラムにより加熱された後熱処理炉内から搬出
される。この一連の単位工程が２回以上繰り返され、熱
処理炉内へのダミー基板の搬入時点から、熱処理炉内か
らダミー基板が搬出された後に熱処理炉内の温度が前記
搬入温度になった時点までの時間が、それぞれの単位工
程ごとに計測される。この場合、熱処理炉の状態が熱的
に安定してくると、前記計測時間が一定値に近付いてき
て、最終的に計測時間がほぼ一定になる。そこで、各単
位工程における計測時間の差、例えば２回目の単位工程
における計測時間から１回目の単位工程における計測時
間を差し引いた値が所定値以内であるかどうかを判別
し、その結果、計測時間の差が所定値以内になったこと
が判別されると、熱処理炉の状態が熱的に安定したと判
断して、その時点で予備加熱を終了させる。一方、１回
目及び２回目の各単位工程における計測時間の差が所定
値以内でないときには、３回目の単位工程を行ない、３
回目の単位工程における計測時間から２回目の単位工程
における計測時間を差し引いた値が所定値以内であるか
どうかを判別し、計測時間の差が所定値以内になったこ
とが判別されると、その時点で予備加熱を終了させ、そ
うでないときには、計測時間の差が所定値以内になった
ことが判別されるまで、単位工程を繰り返し行なう。According to the substrate heat treatment method described above, and in the case where the substrate heat treatment is performed using the apparatus having the above-described structure, the substrate to be processed is placed in the heat treatment furnace before being carried into the heat treatment furnace. When the temperature reaches a constant loading temperature, the dummy substrate is loaded into the heat treatment furnace, and the dummy substrate is heated by a constant heating program and then unloaded from the heat treatment furnace. This series of unit steps is repeated twice or more, and from the time when the dummy substrate is loaded into the heat treatment furnace to the time when the temperature in the heat treatment furnace reaches the loading temperature after the dummy substrate is unloaded from the heat treatment furnace. Time is measured for each unit process. In this case, when the state of the heat treatment furnace becomes thermally stable, the measurement time approaches a constant value, and finally the measurement time becomes almost constant. Therefore, it is determined whether or not the difference in the measurement time in each unit process, for example, the value obtained by subtracting the measurement time in the first unit process from the measurement time in the second unit process is within a predetermined value, and as a result, If it is determined that the difference is within a predetermined value, it is determined that the state of the heat treatment furnace is thermally stable, and the preheating is terminated at that time. On the other hand, when the difference between the measurement times in the first and second unit processes is not within the predetermined value, the third unit process is performed and
It is determined whether a value obtained by subtracting the measurement time in the second unit process from the measurement time in the second unit process is within a predetermined value, and when it is determined that the difference in the measurement time is within the predetermined value, At that point, the preheating is terminated, and if not, the unit process is repeated until it is determined that the difference between the measurement times is within a predetermined value.
【００１４】以上のように、ダミー基板を使用してその
ダミー基板を実際の基板の熱処理と同様の工程で処理
し、その単位工程を複数回繰り返すことにより、熱処理
炉の予備加熱が、実際の基板の熱処理時に近い状態で行
なわれる。そして、予備加熱の終了時点の判定は、熱処
理炉の状態が熱的に安定したと考えられるパラメータに
基づいて行なわれるので、熱処理炉は、過不足無く予備
加熱され、予備加熱終了後、１枚目の被処理基板を熱処
理炉内へ搬入する時には、炉内は熱的にほぼ完全に安定
した状態になる。炉内の熱的状態は、炉内の温度が低下
するその態様に反映される。ダミー基板の搬入時点か
ら、或いはダミー基板の加熱停止時点から、炉内の温度
が搬入温度になるまでの時間は、熱処理炉の熱的状態を
反映したパラメータとなる。炉内の温度が搬入温度にな
るまでの時間は、炉内の温度の低下の過程を長く含んで
おり、得られた計測時間は熱処理炉の熱的状態を高精度
に反映したパラメータとなる。従って、かかる計測時間
に基づけば、熱処理炉の熱的状態を高精度に察知でき、
予備加熱後の炉内の熱的安定も高精度なものとなる。As described above, by using the dummy substrate, the dummy substrate is treated in the same process as the heat treatment of the actual substrate, and the unit process is repeated a plurality of times, so that the preheating of the heat treatment furnace can It is performed in a state close to the heat treatment of the substrate. Then, the judgment of the end point of the preheating is made based on the parameter that the state of the heat treatment furnace is considered to be thermally stable. When the eye substrate to be processed is loaded into the heat treatment furnace, the inside of the furnace is thermally almost completely stable. The thermal conditions in the furnace are reflected in its manner in which the temperature in the furnace decreases. The time from when the dummy substrate is loaded or when the heating of the dummy substrate is stopped until the temperature in the furnace reaches the loading temperature is a parameter that reflects the thermal state of the heat treatment furnace. The time until the temperature in the furnace reaches the carry-in temperature includes the process of the temperature decrease in the furnace for a long time, and the obtained measurement time is a parameter that accurately reflects the thermal state of the heat treatment furnace. Therefore, based on such measurement time, the thermal state of the heat treatment furnace can be detected with high accuracy,
The thermal stability in the furnace after preheating is also highly accurate.
【００１５】また、ダミー基板を２枚使用し、それらの
ダミー基板を交互に熱処理炉内へ搬入して加熱するよう
にしたときは、２枚のダミー基板を順に使って予備加熱
が時間効率良く行なわれる。また、さらに、各単位工程
における計測時間の差の算出を同じダミー基板について
行なうようにしたときは、熱処理炉内への基板の搬出入
動作も含めて実際の基板の熱処理操作により近い動作で
予備加熱が行なわれるので、予備加熱終了時点における
炉内の状態を熱的により安定させることができ、かつ、
各基板の特性の違いで単位工程における計測時間にばら
つきがあっても、計測時間の差の算出が同じダミー基板
同士間で行なわれるので、基板の特性の違いが予備加熱
終了時点の判定に影響を与えることはない。When two dummy substrates are used and the dummy substrates are alternately loaded into the heat treatment furnace to be heated, the two dummy substrates are sequentially used to perform preheating efficiently in time. Done. Furthermore, when the difference in measurement time in each unit process is calculated for the same dummy substrate, the preliminary operation is performed in a similar manner to the actual heat treatment operation of the substrate, including the operation of loading / unloading the substrate into / from the heat treatment furnace. Since heating is performed, the state inside the furnace at the end of preheating can be more thermally stabilized, and
Even if the measurement time in a unit process varies due to the difference in the characteristics of each board, the difference in the measurement time is calculated between the same dummy boards, so the difference in the board characteristics affects the judgment at the end of preheating. Never give.
【００１６】加熱されたダミー基板を冷却するダミー基
板冷却機構を設ければ、より実際の基板の熱処理時に近
い低温状態のダミー基板を使用した予備加熱が時間効率
良く行なわれる。If a dummy substrate cooling mechanism for cooling the heated dummy substrate is provided, preheating using the dummy substrate in a low temperature state, which is closer to the actual heat treatment of the substrate, can be performed efficiently in time.
【００１７】[0017]
【実施例】以下、この発明の好適な実施例について図面
を参照しながら説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described below with reference to the drawings.
【００１８】最初に、図３は、この発明に係る基板の熱
処理方法を実施するのに使用される熱処理装置の構成の
１例を示す概略斜視図であり、図４は、その装置の制御
系統の１例を示すブロック図である。尚、図３において
は、熱処理炉の加熱用ランプの図示を省略している。First, FIG. 3 is a schematic perspective view showing an example of the structure of a heat treatment apparatus used for carrying out the substrate heat treatment method according to the present invention, and FIG. 4 is a control system of the apparatus. 3 is a block diagram showing an example of FIG. In FIG. 3, the heating lamp of the heat treatment furnace is not shown.
【００１９】図３及び図４に示した熱処理装置はランプ
アニール装置であり、このランプアニール装置は、石英
ガラス等によって扁平状で平面形状が矩形に形成され、
一側面が開口した熱処理炉10を有し、その熱処理炉10に
基板が１枚ずつ収容される。熱処理炉10の一側面の開口
12は、蓋体14によって開閉自在に閉塞されるようになっ
ており、蓋体14の内側面側に、基板を保持して熱処理炉
10内へ搬入し熱処理炉10内から搬出するサセプタ16が固
着されている。蓋体14は、図４に模式的に示したよう
に、それに固着されたナット18を介してボールねじ軸20
に連結されており、ボールねじ軸20はモータ22の回転駆
動軸に連接している。そして、モータ22を正・逆回転駆
動させることにより、蓋体14及びサセプタ16を一体に熱
処理炉10の開口12に対して進退させることができるよう
になっている。また、熱処理炉10の外方側には、上面炉
壁及び下面炉壁にそれぞれ対向するようにかつ上下で互
いに直交する方向に、それぞれ複数本の加熱用ランプ24
が列設されている。また、図示を省略しているが、熱処
理炉10には、その炉内へ酸素、アンモニア、窒素、アル
ゴン、一酸化窒素などの活性又は不活性なガスを供給す
るガス制御ユニットが配管を介して流路接続されてい
る。The heat treatment apparatus shown in FIGS. 3 and 4 is a lamp annealing apparatus, and this lamp annealing apparatus is formed of quartz glass or the like into a flat shape and a rectangular plane shape.
The heat treatment furnace 10 has an opening on one side, and the heat treatment furnace 10 accommodates substrates one by one. Opening on one side of heat treatment furnace 10
The lid 12 is configured to be openably and closably closed by a lid body 14, and a substrate is held on the inner surface side of the lid body 14 to hold a heat treatment furnace.
A susceptor 16 that is loaded into the heat treatment furnace 10 and discharged from the heat treatment furnace 10 is fixed. The lid 14 has a ball screw shaft 20 through a nut 18 fixed to the lid 14 as schematically shown in FIG.
The ball screw shaft 20 is connected to the rotary drive shaft of the motor 22. Then, by driving the motor 22 to rotate forward and backward, the lid 14 and the susceptor 16 can be integrally moved forward and backward with respect to the opening 12 of the heat treatment furnace 10. Further, on the outer side of the heat treatment furnace 10, a plurality of heating lamps 24 are provided so as to face the upper surface furnace wall and the lower surface furnace wall, respectively, and in the directions perpendicular to each other in the vertical direction.
Are lined up. Although not shown, the heat treatment furnace 10 has a gas control unit for supplying an active or inactive gas such as oxygen, ammonia, nitrogen, argon, or nitric oxide into the furnace through a pipe. The flow path is connected.
【００２０】熱処理炉10の近傍には、図３に示したよう
に、熱処理前及び熱処理後の基板Ｗを収納するカセット
Ｃが位置決め載置される左右の２つのカセットテーブル
26、28が配設されている。各カセットテーブル26、28の
下方側には、第１のダミー基板DM-L及び第２のダミー基
板DM-Rをそれぞれ収納する左右２つのダミー基板収納部
30、32が配設されている。さらに、左側のダミー基板収
納部30の下方側には、基板Ｗ及びダミー基板DM-L、DM-R
を冷却するための冷却機構34が設けられており、また、
右側のダミー基板収納部32の下方側には、基板の位置調
整を行なうためのアライメント機構36が設けられてい
る。また、この装置には、基板を載置して支持するハン
ドリングアーム40を備えた基板移送機構38が設けられて
いる。ハンドリングアーム40は、昇降駆動可能に本体部
42に取り付けられており、また、本体部42は、レール44
に案内され、図示しない駆動装置（例えばボールねじ軸
とモータ）により駆動されて、往復移動可能とされてい
る。そして、この基板移送機構38により、左右のカセッ
トテーブル26、28上に載置されたカセットＣ、アライメ
ント機構36、サセプタ16、冷却機構34及び左右のダミー
基板収納部30、32の各間において、基板Ｗ及びダミー基
板DM-L、DM-Rが移送される。In the vicinity of the heat treatment furnace 10, as shown in FIG. 3, two cassette tables, left and right, on which the cassettes C for storing the substrates W before and after the heat treatment are positioned and mounted.
26 and 28 are provided. Below the respective cassette tables 26 and 28, two left and right dummy substrate storage units for storing the first dummy substrate DM-L and the second dummy substrate DM-R, respectively.
30 and 32 are provided. Further, on the lower side of the left dummy substrate housing portion 30, the substrate W and the dummy substrates DM-L, DM-R are provided.
A cooling mechanism 34 for cooling the
An alignment mechanism 36 for adjusting the position of the substrate is provided below the dummy substrate housing 32 on the right side. Further, the apparatus is provided with a substrate transfer mechanism 38 having a handling arm 40 for mounting and supporting the substrate. The handling arm 40 has a main body that can be moved up and down.
It is attached to the rail 42, and the main body 42 is attached to the rail 44.
And is driven by a driving device (not shown) (for example, a ball screw shaft and a motor) to be reciprocally movable. Then, by the substrate transfer mechanism 38, between the cassette C placed on the left and right cassette tables 26, 28, the alignment mechanism 36, the susceptor 16, the cooling mechanism 34, and the left and right dummy substrate storage sections 30, 32, respectively. The substrate W and the dummy substrates DM-L and DM-R are transferred.
【００２１】また、熱処理炉10には、その内方に石英管
48によって支持されたモニター用ウエハ46が配設されて
おり、そのモニター用ウエハ46から放射される赤外線を
受光し、モニター用ウエハ46の温度、従って熱処理炉10
内の温度を測定する温度センサ50が設けられている。そ
して、温度センサ50の検出信号は、Ａ／Ｄコンバータ52
を経てマイクロコンピュータ（以下、「マイコン」とい
う）54へ送られる。マイコン54にはメモリ56が併設され
ており、そのメモリ56に、基板Ｗ及びダミー基板DM-L、
DM-Rを熱処理炉10内へ搬入するときの搬入温度並びに熱
処理炉10内から搬出するときの搬出温度を指定する各デ
ータが記憶されている。また、マイコン54は、温度セン
サの検出信号に基づいて熱処理炉10内の温度が前記搬入
温度になったことを判別し、また、所定の搬出温度にな
ったことを判別する機能、熱処理炉10内の温度が搬入温
度になったことが判別された時点でシーケンサ（マイコ
ン）58へ制御信号を送ってシーケンサ58からモータ22へ
駆動信号を送り、サセプタ16に保持された基板Ｗ又はダ
ミー基板DM-L、DM-Rを熱処理炉10内へ搬入させ、また、
加熱後において熱処理炉10内の温度が所定の搬出温度に
なったことが判別された時点で、同様にして、サセプタ
16に保持された加熱後の基板Ｗ又はダミー基板DM-L、DM
-Rを熱処理炉10内から搬出させるようにする機能、シー
ケンサ58へ制御信号を送ってシーケンサ58から基板移送
機構38へ駆動信号を送り、基板移送機構38を作動させて
各カセット26、28上のカセットＣ、アライメント機構3
6、サセプタ16、冷却機構34及び各ダミー基板収納部3
0、32の各間における基板Ｗ又はダミー基板DM-L、DM-R
の移送を行なわせるようにする機能、並びに、Ｄ／Ａコ
ンバータ60を経てランプ用電源62へ信号を送ってランプ
用電源62の電圧、電流を変化させ、光源用ランプ24によ
り熱処理炉10内に収容された基板Ｗ又はダミー基板DM-
L、DM-Rを一定の加熱プログラムに従って加熱するよう
に制御する機能を具備している。さらにまた、マイコン
54は、熱処理炉10内へのダミー基板DM-L、DM-Rの搬入時
点から、熱処理炉10内からダミー基板DM-L、DM-Rが搬出
された後熱処理炉10内の温度が再び搬入温度になった時
点までの時間を計測する機能、計測された計測時間を記
憶する機能、新たに計測された計測時間と先に記憶され
た計測時間との差を算出し、その差が所定値以内である
かどうかを判別する機能、並びに、計測時間の差が所定
値以内になったことが判別された時点で予備加熱を終了
させ、シーケンサ58を介し基板移送機構38を制御して、
１枚目の基板Ｗの熱処理操作を開始させるようにする機
能も具備している。尚、計測時間の差が所定値以内にな
ったかどうかを判別するときの基準値は、装置ごとに固
有の値としてメモリ56にデータとして予め記憶されてい
る。Further, the heat treatment furnace 10 has a quartz tube inside thereof.
A monitor wafer 46 supported by 48 is arranged, receives infrared rays radiated from the monitor wafer 46, receives the temperature of the monitor wafer 46, and thus the heat treatment furnace 10.
A temperature sensor 50 for measuring the temperature inside is provided. The detection signal of the temperature sensor 50 is the A / D converter 52.
And is sent to a microcomputer (hereinafter referred to as “microcomputer”) 54. A memory 56 is provided in parallel with the microcomputer 54. The memory 56 has a substrate W and a dummy substrate DM-L,
Each data that specifies the carry-in temperature when carrying the DM-R into the heat treatment furnace 10 and the carry-out temperature when carrying out from the heat treatment furnace 10 is stored. Further, the microcomputer 54 determines, based on the detection signal of the temperature sensor, that the temperature inside the heat treatment furnace 10 has reached the carry-in temperature, and also that the temperature has reached a predetermined carry-out temperature, the heat treatment furnace 10 When it is determined that the internal temperature has reached the carry-in temperature, a control signal is sent to the sequencer (microcomputer) 58, a drive signal is sent from the sequencer 58 to the motor 22, and the substrate W or the dummy substrate DM held by the susceptor 16 is sent. -L, DM-R is carried into the heat treatment furnace 10,
When it is determined that the temperature in the heat treatment furnace 10 has reached the predetermined discharge temperature after heating, the susceptor is similarly processed.
Heated substrate W held on 16 or dummy substrates DM-L, DM
-A function to carry out R from the heat treatment furnace 10, send a control signal to the sequencer 58 to send a drive signal from the sequencer 58 to the substrate transfer mechanism 38, and operate the substrate transfer mechanism 38 to operate on each cassette 26, 28. Cassette C, alignment mechanism 3
6, susceptor 16, cooling mechanism 34 and each dummy substrate storage 3
Substrate W or dummy substrate DM-L, DM-R between 0 and 32
And a function to allow the lamp power source 62 to transmit a signal through the D / A converter 60 to change the voltage and current of the lamp power source 62, and the light source lamp 24 causes the lamp power source 62 to move into the heat treatment furnace 10. Stored substrate W or dummy substrate DM-
It has a function to control L and DM-R to be heated according to a certain heating program. Furthermore, the microcomputer
Reference numeral 54 denotes a temperature inside the heat treatment furnace 10 after the dummy substrates DM-L and DM-R are carried out from the heat treatment furnace 10 from the time when the dummy substrates DM-L and DM-R are carried into the heat treatment furnace 10. Function to measure the time until the temperature reaches the carry-in temperature, function to memorize the measured time, and calculate the difference between the newly measured time and the previously memorized time. A function of determining whether or not it is within a value, and when it is determined that the difference in measurement time is within a predetermined value, preheating is terminated, and the substrate transfer mechanism 38 is controlled via the sequencer 58.
It also has a function of starting the heat treatment operation of the first substrate W. The reference value for determining whether or not the difference between the measurement times is within a predetermined value is previously stored as data in the memory 56 as a value unique to each device.
【００２２】次に、図１に示したフローチャートに基づ
き、予備加熱の方法について説明する。Next, the preheating method will be described with reference to the flow chart shown in FIG.
【００２３】最初に、基板移送機構38によりダミー基板
収納部30から第１のダミー基板DM-Lを取り出してそのダ
ミー基板DM-Lをサセプタ16上に移載しておく。そして、
熱処理炉10内の温度が一定の搬入温度になった時点で、
サセプタ16上に保持されたダミー基板DM-Lを熱処理炉10
内へ搬入する。ダミー基板DM-Lが熱処理炉10内に収容さ
れると、加熱用ランプ24による加熱を開始し、一定の加
熱プログラムに従ってダミー基板DM-Lを熱処理する。そ
して、一定時点で加熱を停止する。加熱を停止すると、
熱処理炉10内の温度が下降するが、熱処理炉10内の温度
が一定の搬出温度になった時点で、サセプタ16上に保持
されたダミー基板DM-Lを熱処理炉10外へ搬出する。尚、
第１のダミー基板DM-Lをサセプタ16に移載した後、基板
搬送機構38は、第２のダミー基板DM-Rをダミー基板収納
部32から取り出してアライメント機構36へ搬送し、予め
アライメントがなされる。そして、第１のダミー基板DM
-Lが熱処理炉10外へ搬出されると、基板移送機構38によ
り、ダミー基板DM-Lをサセプタ16上から冷却機構34上へ
移送し、続いて、予めアライメントしてあった第２のダ
ミー基板DM-Rをアライメント機構36から取り出してサセ
プタ16上へ移載しておく。尚、第１のダミー基板DM-L
は、冷却機構34により所定時間冷却処理し、その後に冷
却機構34からダミー基板収納部30へ戻しておくようにす
る。First, the substrate transfer mechanism 38 takes out the first dummy substrate DM-L from the dummy substrate storage section 30 and transfers the dummy substrate DM-L onto the susceptor 16. And
At the time when the temperature in the heat treatment furnace 10 reaches a constant carry-in temperature,
The dummy substrate DM-L held on the susceptor 16 is heat-treated in the furnace 10
Bring it in. When the dummy substrate DM-L is housed in the heat treatment furnace 10, heating by the heating lamp 24 is started, and the dummy substrate DM-L is heat-treated according to a certain heating program. Then, the heating is stopped at a certain point. When you stop heating,
Although the temperature in the heat treatment furnace 10 is lowered, when the temperature in the heat treatment furnace 10 reaches a constant carry-out temperature, the dummy substrate DM-L held on the susceptor 16 is carried out of the heat treatment furnace 10. still,
After the first dummy substrate DM-L is transferred onto the susceptor 16, the substrate transfer mechanism 38 takes out the second dummy substrate DM-R from the dummy substrate storage section 32 and transfers it to the alignment mechanism 36 so that the alignment is performed in advance. Done. Then, the first dummy substrate DM
When -L is carried out of the heat treatment furnace 10, the substrate transfer mechanism 38 transfers the dummy substrate DM-L from the susceptor 16 onto the cooling mechanism 34, and then the second dummy that has been previously aligned. The substrate DM-R is taken out from the alignment mechanism 36 and placed on the susceptor 16. The first dummy substrate DM-L
Is cooled by the cooling mechanism 34 for a predetermined time, and then returned from the cooling mechanism 34 to the dummy substrate storage section 30.
【００２４】熱処理炉10内の温度が再び一定の搬入温度
になると、サセプタ16上に保持されたダミー基板DM-Rを
熱処理炉10内へ搬入する。また、このとき、第１のダミ
ー基板DM-Lが熱処理炉10内へ搬入された時点から、熱処
理炉10内の温度が再び搬入温度になって第２のダミー基
板DM-Rの搬入が行なわれる時点までの時間ｔ1を計測し
てマイコン54に記憶させておく。そして、上記と同様の
工程により、熱処理炉10内に収容されたダミー基板DM-R
を熱処理し、加熱停止後熱処理炉10内の温度が搬出温度
になった時点でダミー基板DM-Rを熱処理炉10外へ搬出す
る。熱処理炉10外へ搬出されたダミー基板DM-Rは、上記
と同様にして、サセプタ16上から冷却機構34を経てダミ
ー基板収納部32へ戻される。一方、第１のダミー基板DM
-Lは、ダミー基板収納部30へ戻されると直ちにアライメ
ント機構36へ運ばれて、アライメントされた状態とされ
る。そして、第２のダミー基板DM-Rがサセプタ16から冷
却機構34へ移送されると、第１のダミー基板DM-Lは直ち
にサセプタ16上へ再び移載される。そして、熱処理炉10
内の温度が再び搬入温度になった時点で、ダミー基板DM
-Lが熱処理炉10内へ搬入され、また、このとき、第２の
ダミー基板DM-Rが熱処理炉10内へ搬入された時点から熱
処理炉10内の温度が搬入温度になった時点までの時間ｔ
2を計測してマイコン54に記憶させる。When the temperature inside the heat treatment furnace 10 reaches a constant carry-in temperature again, the dummy substrate DM-R held on the susceptor 16 is carried into the heat treat furnace 10. Further, at this time, from the time when the first dummy substrate DM-L is loaded into the heat treatment furnace 10, the temperature in the heat treatment furnace 10 becomes the loading temperature again, and the second dummy substrate DM-R is loaded. The time t 1 up to the point of time is measured and stored in the microcomputer 54. Then, the dummy substrate DM-R housed in the heat treatment furnace 10 is subjected to the same steps as described above.
After the heating is stopped, the dummy substrate DM-R is carried out of the heat treatment furnace 10 when the temperature inside the heat treatment furnace 10 reaches the carry-out temperature. The dummy substrate DM-R carried out of the heat treatment furnace 10 is returned to the dummy substrate housing section 32 from above the susceptor 16 through the cooling mechanism 34 in the same manner as described above. On the other hand, the first dummy substrate DM
As soon as -L is returned to the dummy substrate storage section 30, it is carried to the alignment mechanism 36 and brought into an aligned state. Then, when the second dummy substrate DM-R is transferred from the susceptor 16 to the cooling mechanism 34, the first dummy substrate DM-L is immediately transferred onto the susceptor 16 again. And the heat treatment furnace 10
When the temperature inside reaches the carry-in temperature again, the dummy substrate DM
-L is carried into the heat treatment furnace 10, and at this time, from the time when the second dummy substrate DM-R is carried into the heat treatment furnace 10 to the time when the temperature in the heat treatment furnace 10 reaches the carry-in temperature. Time t
2 is measured and stored in the microcomputer 54.
【００２５】さらに、熱処理炉10内に収容された第１の
ダミー基板DM-Lについて上記と全く同様の操作を繰り返
し、ダミー基板DM-Lが熱処理炉10内へ搬入された時点か
ら熱処理炉10内の温度が搬入温度になって第２のダミー
基板DM-Rが熱処理炉10内へ搬入された時点までの時間ｔ
3を計測する。Further, the same operation as described above is repeated for the first dummy substrate DM-L housed in the heat treatment furnace 10, and the heat treatment furnace 10 is loaded from the time when the dummy substrate DM-L is loaded into the heat treatment furnace 10. The time t until the second dummy substrate DM-R is loaded into the heat treatment furnace 10 when the temperature inside has reached the loading temperature.
Measure 3 .
【００２６】ここで、各単位工程において熱処理炉10内
の温度は、図２にタイムチャートを示したように変化す
るが、ダミー基板DM-L、DM-Rを熱処理炉10内へ搬入した
時点から加熱を停止する時点までの時間ｔaは、一定の
加熱プログラムに従って熱処理が行なわれるので一定で
あり、一方、加熱を停止した時点から熱処理炉10内の温
度が一定の搬入温度になって次のダミー基板DM-R、DM-L
が熱処理炉10内へ搬入される時点までの時間ｔbは、熱
処理炉10の状態によって変化する。すなわち、単位工程
の繰返し回数が多くなる程、熱処理炉10は熱的に安定し
た状態になってくるため、時間ｔbが長くなり、従って
ダミー基板DM-L、DM-Rの搬入時点から炉内が一定の搬入
温度になる時点までの上記計測時間ｔn（ｔa＋ｔb）が
長くなり、かつ、各単位工程における計測時間の差は次
第に小さくなってくる。そこで、計測時間の差が所定値
以内であるかどうかを判別し、計測時間の差が所定値以
内になったことが判別されたことをもって予備加熱を終
了することとする。この場合、２枚のダミー基板の特性
の違いで予備加熱終了時点の判定に影響が出ないように
するため、同じダミー基板、ここでは、第１のダミー基
板DM-Lについて計測時間の差〔ｔ 2ｎ+1−ｔ 2ｎ-1〕
（ｎ：正の整数）を算出することとした。すなわち、新
たに計測された時間ｔ3とマイコン54に記憶させておい
て先の計測時間ｔ1との差を算出し、その差〔ｔ3−
ｔ1〕が所定値以内であるかどうかを判別する。Here, in each unit process, the temperature in the heat treatment furnace 10 changes as shown in the time chart in FIG. 2, but when the dummy substrates DM-L and DM-R are carried into the heat treatment furnace 10. The time ta from when the heating is stopped to the time when the heating is stopped is constant because the heat treatment is performed according to a constant heating program. Dummy board DM-R, DM-L
The time tb until the time when the heat treatment is carried into the heat treatment furnace 10 changes depending on the state of the heat treatment furnace 10. That is, as the number of repetitions of the unit process increases, the heat treatment furnace 10 becomes in a thermally stable state, and the time tb becomes longer. Therefore, the dummy substrates DM-L and DM-R are loaded into the furnace from the time of loading. The measurement time tn (ta + tb) until the temperature reaches a constant loading temperature becomes longer, and the difference between the measurement times in each unit process becomes gradually smaller. Therefore, it is determined whether or not the difference between the measurement times is within a predetermined value, and the preheating is terminated when it is determined that the difference between the measurement times is within the predetermined value. In this case, in order to prevent the determination of the end time of preheating from being affected by the difference in the characteristics of the two dummy substrates, the difference in measurement time between the same dummy substrate, here, the first dummy substrate DM-L t 2n + 1-t 2n-1]
It was decided to calculate (n: positive integer). That is, the difference between the newly measured time t 3 and the previously measured time t 1 stored in the microcomputer 54 is calculated, and the difference [t 3 −
It is determined whether or not t 1 ] is within a predetermined value.
【００２７】計測時間の差〔ｔ3−ｔ1〕が所定値以内で
あるかどうかを判別した結果、差〔ｔ3−ｔ1〕が所定値
以内であることが判別されたときには、熱処理炉10内に
収容された第２のダミー基板DM-Rを熱処理した後熱処理
炉10外へ搬出し、実際の被処理基板Ｗの熱処理工程へ移
行するようにして、予備加熱工程を終了する。一方、差
〔ｔ3−ｔ1〕が所定値以内でないと判別されたときに
は、上記と同様にして、第２のダミー基板DM-Rを加熱し
た後、さらに第１のダミー基板DM-Lを加熱し熱処理炉10
外へ搬出して、熱処理炉10内へのダミー基板DM-Lの搬入
時点から熱処理炉10内の温度が搬入温度になった時点ま
での時間ｔ5を計測し、その計測時間ｔ5とマイコンに記
憶された先の計測時間ｔ3との差〔ｔ5−ｔ3〕が所定値
以内であるかどうかを判別する。その結果、差〔ｔ5−
ｔ3〕が所定値以内であることが判別されたときは、上
記と同様にして予備加熱工程を終了し、そうでないと判
別されたときは、計測時間の差〔ｔ 2ｎ+1−ｔ 2ｎ-1〕
が所定値以内になるまで、上記単位工程を繰り返す。As a result of determining whether the difference [t 3 −t 1 ] of the measurement times is within a predetermined value, when it is determined that the difference [t 3 −t 1 ] is within the predetermined value, the heat treatment furnace After the second dummy substrate DM-R housed in the substrate 10 is heat-treated, it is carried out of the heat treatment furnace 10 and the actual heating process of the substrate W to be processed is started to complete the preliminary heating process. On the other hand, when it is determined that the difference [t 3 −t 1 ] is not within the predetermined value, the second dummy substrate DM-R is heated and then the first dummy substrate DM-L is further added in the same manner as above. Heating and heat treatment furnace 10
The time t 5 from the time when the dummy substrate DM-L is carried into the heat treatment furnace 10 to the time when the temperature inside the heat treatment furnace 10 reaches the carry-in temperature is measured, and the measured time t 5 and the microcomputer are measured. the difference between the previous measurement time t 3 when stored [t 5 -t 3] to determine whether it is within a predetermined value to. As a result, the difference [t 5 −
When it is determined that t 3 ] is within the predetermined value, the preheating step is ended in the same manner as described above, and when it is determined that it is not, the difference in measurement time [t 2n + 1−t 2n -1]
The above unit process is repeated until is within a predetermined value.
【００２８】尚、上記実施例では、２枚のダミー基板の
うちの一方のダミー基板DM-Lについて各計測時間の差
〔ｔ 2ｎ+1−ｔ 2ｎ-1〕が所定値以内であるかどうかを
判別するようにしたが、他方のダミー基板DM-Rについて
も各計測時間の差〔ｔ 2n+2−ｔ 2ｎ〕（ｎ：正の整
数）が所定値以内であるかどうかを判別するようにし、
何れか一方のダミー基板について計測時間の差が所定値
以内になったことが判別されたときに、予備加熱を終了
させるようにしてもよい。また、タイミング的に可能で
あれば、１枚のダミー基板を使用して上記と同様の方法
で予備加熱を行なうようにしてもよいし、また、３枚も
しくはそれ以上のダミー基板を使用するようにしてもよ
い。In the above embodiment, whether the difference [t 2n + 1-t 2n-1] between the measurement times of one dummy substrate DM-L of the two dummy substrates is within a predetermined value or not. However, for the other dummy substrate DM-R, it is also determined whether the difference [t 2n + 2-t 2n] (n: positive integer) between the respective measurement times is within a predetermined value. West,
The preheating may be terminated when it is determined that the difference between the measurement times of either one of the dummy substrates is within a predetermined value. If it is possible in terms of timing, one dummy substrate may be used to perform preheating in the same manner as described above, or three or more dummy substrates may be used. You may
【００２９】また、上記実施例では、ダミー基板の搬入
時点から、炉内の温度が搬入温度になるまでの時間ｔn
を計測していたが、ダミー基板の加熱停止時点から、炉
内の温度が一定の搬入温度になるまでの時間ｔbのみを
計測し、その計測時間に基づいて、予備加熱を終了させ
るように構成してもよい。さらに、加熱されたダミー基
板を冷却するダミー基板冷却機構を設ければ、より実際
の基板の熱処理時に近い低温状態のダミー基板を使用し
た予備加熱を時間効率良く行なうことができ、特に本実
施例に示したように、２枚のダミー基板を用いれば、１
枚のダミー基板を使った予備加熱が終わったとき、直ち
に他の１枚のダミー基板を使って予備加熱を続けて行な
い、同時に先に使用したダミー基板を次の予備加熱のた
めにダミー基板冷却機構で冷却できるので、予備加熱を
特に時間効率良く行なうことができる。Further, in the above embodiment, the time tn from the time of carrying in the dummy substrate until the temperature in the furnace reaches the carrying-in temperature.
However, only the time tb from the time when the heating of the dummy substrate is stopped until the temperature in the furnace reaches a constant temperature is measured, and the preheating is completed based on the measured time. You may. Further, if a dummy substrate cooling mechanism for cooling the heated dummy substrate is provided, preheating using a dummy substrate in a low temperature state that is closer to the actual heat treatment of the substrate can be performed efficiently in time. As shown in, if two dummy substrates are used,
When the preheating using one dummy substrate is finished, immediately perform the preheating using another dummy substrate, and at the same time, cool the previously used dummy substrate to the dummy substrate for the next preheating. Since it can be cooled by the mechanism, preheating can be performed particularly efficiently in time.
【００３０】[0030]
【発明の効果】この発明は以上説明したように構成され
かつ作用するので、請求項１、１０に記載された発明に
係る基板の熱処理方法によれば、被処理基板を熱処理炉
内へ搬入される前に熱処理炉の予備加熱を過不足無く行
なうことができるため、予備加熱を必要以上に長時間行
なって全体の処理時間が長くなったり、予備加熱の程度
が不十分で基板の熱処理品質に再現性が得られなかった
りするといったことを避けることができ、予備加熱を終
了して１枚目の被処理基板を熱処理炉内へ搬入する時点
では炉内を熱的にほぼ完全に安定した状態にすることが
できるため、１枚目の基板と２枚目以降の基板とで熱処
理品質に良好な再現性が得られることになる。Since the present invention is constructed and operates as described above, according to the method of heat treating a substrate according to the invention described in claims 1 and 10, the substrate to be processed is carried into the heat treatment furnace. Since the preheating of the heat treatment furnace can be performed without excess or deficiency before the heat treatment, the pretreatment can be performed for an unnecessarily long time to lengthen the entire processing time, or the degree of preheating is insufficient to improve the heat treatment quality of the substrate. It is possible to avoid that reproducibility is not obtained, and at the time when the first substrate to be processed is loaded into the heat treatment furnace after the completion of preheating, the inside of the furnace is in a thermally almost completely stable state. Therefore, good reproducibility of heat treatment quality can be obtained between the first substrate and the second and subsequent substrates.
【００３１】また、請求項２に記載の発明に係る方法に
よれば、２枚のダミー基板を順に使って予備加熱が時間
効率良く行なわれる。また、請求項３に記載の発明に係
る方法によれば、予備加熱終了時点における熱処理炉内
の状態を熱的により安定させることができ、かつ、２枚
のダミー基板に特性の違いがあってもその違いが予備加
熱終了時点の判定に影響を与えることがないため、基板
の熱処理品質における再現性を一層向上させることがで
きる。According to the method of the second aspect of the present invention, the preheating is time-efficiently performed by sequentially using the two dummy substrates. Further, according to the method of the invention described in claim 3, the state in the heat treatment furnace at the end of the preheating can be thermally stabilized, and the two dummy substrates have different characteristics. However, since the difference does not affect the determination at the end of preheating, the reproducibility of the heat treatment quality of the substrate can be further improved.
【００３２】請求項４、１１に記載の発明に係る装置を
使用して基板の熱処理を行なうようにしたときは、請求
項１に記載の発明に係る方法を好適に実施して上記効果
を達成することができ、また、請求項６、７に記載の発
明に係る装置を使用すれば、それぞれ請求項２、３に記
載の発明に係る方法を好適に実施して上記効果を達成す
ることができる。また、請求項５及び請求項８にそれぞ
れ記載されているように、所定の各手段をマイクロコン
ピュータで構成するようにすれば、実際の装置を簡単に
構成することができる。When the apparatus according to the invention described in claims 4 and 11 is used to heat-treat the substrate, the method according to the invention according to claim 1 is preferably carried out to achieve the above effect. Further, by using the apparatus according to the inventions described in claims 6 and 7, it is possible to suitably carry out the method according to the inventions described in claims 2 and 3 to achieve the above effects. it can. Further, as described in claims 5 and 8, respectively, if each predetermined means is configured by a microcomputer, an actual device can be easily configured.
【００３３】請求項９に記載の発明に係る装置を使用す
れば、より実際の基板の熱処理時に近い低温状態のダミ
ー基板を使用した予備加熱が時間効率良く行なわれる。By using the apparatus according to the ninth aspect of the present invention, preheating using a dummy substrate in a low temperature state, which is closer to the actual heat treatment of the substrate, is performed with good time efficiency.
【図１】この発明の１実施例を示し、基板の熱処理方法
における一連の工程を説明するためのフローチャートで
ある。FIG. 1 is a flowchart showing one embodiment of the present invention and illustrating a series of steps in a substrate heat treatment method.
【図２】この発明に係る方法を実施して予備加熱を行な
ったときの、各単位工程における熱処理炉内の温度の時
間的変化を示すタイムチャートである。FIG. 2 is a time chart showing a temporal change in the temperature in the heat treatment furnace in each unit process when the method according to the present invention is carried out and preheating is performed.
【図３】この発明に係る方法を実施するために使用され
る基板の熱処理装置の構成の１例を示す概略斜視図であ
る。FIG. 3 is a schematic perspective view showing an example of the configuration of a substrate heat treatment apparatus used for carrying out the method according to the present invention.
【図４】図３に示した装置の制御系統の１例を示すブロ
ック図である。4 is a block diagram showing an example of a control system of the device shown in FIG.
10 熱処理炉 14 蓋体 16 サセプタ 24 加熱用ランプ 26、28 カセットテーブル 30、32 ダミー基板収納部 38 基板移送機構 40 ハンドリングアーム 46 モニター用ウエハ 50 温度センサ 54 マイクロコンピュータ 56 メモリ 58 シーケンサ 62 ランプ用電源 Ｗ 基板 DM-L、DM-R ダミー基板 10 Heat treatment furnace 14 Lid 16 Susceptor 24 Heating lamp 26, 28 Cassette table 30, 32 Dummy substrate storage section 38 Substrate transfer mechanism 40 Handling arm 46 Monitor wafer 50 Temperature sensor 54 Microcomputer 56 Memory 58 Sequencer 62 Lamp power supply W Substrate DM-L, DM-R Dummy substrate
───────────────────────────────────────────────────── フロントページの続き (72)発明者 安江 淳 京都市伏見区羽束師古川町322番地 大日 本スクリーン製造株式会社洛西工場内 (72)発明者 高橋 光和 京都市伏見区羽束師古川町322番地 大日 本スクリーン製造株式会社洛西工場内 (72)発明者 樹山 弘喜 京都市伏見区羽束師古川町322番地 大日 本スクリーン製造株式会社洛西工場内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Atsushi Yasue 322 Hazashishi Furukawa-cho, Fushimi-ku, Kyoto City Dainichi Screen Manufacturing Co., Ltd. Rakusai Factory (72) Inventor Mitsukazu Takahashi 322 Hazushi-shi Furukawa-cho, Fushimi-ku, Kyoto Address Dainichi Main Screen Manufacturing Co., Ltd. Rakusai Factory (72) Inventor Hiroki Kiyama 322 Hazashishi Furukawacho, Fushimi-ku, Kyoto City Dainichi Screen Manufacturing Co., Ltd. Rakusai Factory
Claims (11)
所定の状態になった時点で予備加熱を終了し、被処理基
板を１枚ずつ前記熱処理炉内に収容して熱処理する基板
の熱処理方法において、 熱処理炉内の温度が一定の搬入温度になった時点でダミ
ー基板を熱処理炉内へ搬入し、熱処理炉内に収容された
ダミー基板を一定の加熱プログラムにより加熱し、加熱
が終了したダミー基板を熱処理炉内から搬出し、 以上の熱処理炉内へのダミー基板の搬入から熱処理炉内
からのダミー基板の搬出までの一連の単位工程を少なく
とも２回繰り返し、 熱処理炉内へのダミー基板の搬入時点から、熱処理炉内
からのダミー基板の搬出後に熱処理炉内の温度が前記搬
入温度になった時点までの時間を計測し、 各単位工程における計測時間の差を算出し、その差が所
定値以内になった時に予備加熱を終了することを特徴と
する基板の熱処理方法。1. A substrate for preheating in a heat treatment furnace, terminating the preheating when the atmosphere in the furnace reaches a predetermined state, and accommodating substrates to be heat treated in the heat treatment furnace one by one. In the heat treatment method, the dummy substrate is loaded into the heat treatment furnace when the temperature in the heat treatment furnace reaches a certain temperature, and the dummy substrate stored in the heat treatment furnace is heated by a certain heating program, and heating is completed. The dummy substrate is unloaded from the heat treatment furnace, and the series of unit steps from loading the dummy substrate into the heat treatment furnace to unloading the dummy substrate from the heat treatment furnace are repeated at least twice, and the dummy substrate is put into the heat treatment furnace. The time from the time when the substrate was carried in to the time when the temperature in the heat treatment furnace reached the carry-in temperature after the dummy substrate was carried out of the heat treatment furnace was measured, and the difference in the measurement time in each unit process was calculated. Heat treatment method of the substrate, characterized in that the difference has finished preliminary heating when it is within a predetermined value.
ー基板を交互に熱処理炉内へ搬入して加熱するようにす
る請求項１記載の基板の熱処理方法。2. The heat treatment method for a substrate according to claim 1, wherein two dummy substrates are used, and the dummy substrates are alternately loaded into a heat treatment furnace and heated.
ー基板を交互に熱処理炉内へ搬入して加熱し、 各単位工程における計測時間の差の算出を同じダミー基
板について行なうようにする請求項１記載の基板の熱処
理方法。3. Use of two dummy substrates, the dummy substrates are alternately loaded into a heat treatment furnace and heated, and the difference in measurement time in each unit process is calculated for the same dummy substrate. Item 2. A heat treatment method for a substrate according to Item 1.
搬出する基板保持・搬出入手段と、 前記熱処理炉内に収容された基板を加熱する加熱手段
と、 前記熱処理炉内の温度を測定する測温手段と、 前記熱処理炉内に収容された基板を一定の加熱プログラ
ムにより加熱するように前記加熱手段を制御する加熱制
御手段とを備えた基板の熱処理装置において、 ダミー基板を収納する基板収納部と、 この収納部に収納されたダミー基板を前記基板保持・搬
出入手段へ移載する基板移載手段と、 ダミー基板を前記熱処理炉内へ搬入する搬入温度を指定
する搬入温度指定手段と、 前記測温手段によって測定された熱処理炉内の温度が、
前記搬入温度指定手段によって指定された搬入温度にな
ったことを判別する温度判別手段と、 この温度判別手段によって熱処理炉内の温度が一定の搬
入温度になったことが判別された時点でダミー基板を熱
処理炉内へ搬入するように前記基板保持・搬出入手段を
制御する基板搬入制御手段と、 熱処理炉内へのダミー基板の搬入時点から、熱処理炉内
からのダミー基板の搬出後に熱処理炉内の温度が前記搬
入温度になった時点までの時間を計測する計時手段と、 この計時手段によって計測された計測時間を記憶する記
憶手段と、 前記計時手段によって新たに計測された計測時間と前記
記憶手段に記憶された先の計測時間との差を算出し、そ
の差が所定値以内であるかどうかを判別する時間判別手
段と、 この時間判別手段によって計測時間の差が所定値以内に
なったことが判別された時点で予備加熱を終了させる予
備加熱終了制御手段とを設けたことを特徴とする基板の
熱処理装置。4. A heat treatment furnace for accommodating the substrates one by one, a substrate holding / removing means for retaining the substrates and carrying them into the heat treatment furnace, and unloading them from the heat treatment furnace, and the heat treatment furnace accommodated in the heat treatment furnace. Heating means for heating the substrate, temperature measuring means for measuring the temperature in the heat treatment furnace, and heating control means for controlling the heating means to heat the substrate accommodated in the heat treatment furnace according to a certain heating program. In a substrate heat treatment apparatus including: a substrate storage unit for storing a dummy substrate; a substrate transfer unit for transferring the dummy substrate stored in the storage unit to the substrate holding / loading / unloading unit; The temperature in the heat treatment furnace, which is measured by the temperature measurement means, and the temperature in the heat treatment furnace that specifies the temperature for carrying in the heat treatment furnace,
A temperature discriminating means for discriminating that the carry-in temperature designated by the carry-in temperature designating means has been reached, and a dummy substrate at the time when the temperature discriminating means discriminates that the temperature in the heat treatment furnace has reached a constant carry-in temperature. Substrate loading / unloading means for controlling the substrate holding and loading / unloading means so that the dummy substrate is loaded into the heat treatment furnace, and the dummy substrate is loaded into the heat treatment furnace from the time when the dummy substrate is loaded into the heat treatment furnace. Time means for measuring the time until the temperature reaches the carry-in temperature, storage means for storing the measurement time measured by the time measuring means, and measurement time newly measured by the time measuring means and the storage A time discriminating means for calculating a difference from the previous measurement time stored in the means, and discriminating whether or not the difference is within a predetermined value; There thermal processing apparatus of the substrate, characterized by comprising a preheating termination control means for terminating the preheating when it is determined that becomes within a predetermined value.
手段、記憶手段、時間判別手段及び予備加熱終了制御手
段がマイクロコンピュータで構成された請求項４記載の
基板の熱処理装置。5. The substrate heat treatment apparatus according to claim 4, wherein the temperature discriminating means, the substrate loading control means, the timing means, the storage means, the time discriminating means and the preheating end control means are constituted by a microcomputer.
収納部を有し、 前記２枚のダミー基板を交互に熱処理炉内へ搬入して加
熱するように基板移載手段を制御する基板移載制御手段
を設けたものである請求項４又は請求項５記載の基板の
熱処理装置。6. A substrate having two substrate storage portions for storing two dummy substrates, and controlling the substrate transfer means so as to alternately carry the two dummy substrates into a heat treatment furnace and heat them. The substrate heat treatment apparatus according to claim 4 or 5, further comprising transfer control means.
て計測時間の差の算出を行なうようにするものである請
求項６記載の基板の熱処理装置。7. The substrate heat treatment apparatus according to claim 6, wherein the time discriminating means calculates a difference in measurement time for the same dummy substrate.
タで構成された請求項６記載の基板の熱処理装置。8. The substrate heat treatment apparatus according to claim 6, wherein the substrate transfer control means comprises a microcomputer.
基板冷却機構を設けた請求項４ないし請求項８のいずれ
かに記載の基板の熱処理装置。9. The substrate heat treatment apparatus according to claim 4, further comprising a dummy substrate cooling mechanism that cools the heated dummy substrate.
が所定の状態になった時点で予備加熱を終了し、被処理
基板を１枚ずつ前記熱処理炉内に収容して熱処理する基
板の熱処理方法において、 ダミー基板を熱処理炉内へ搬入し、熱処理炉内に収容さ
れたダミー基板を一定の加熱プログラムにより加熱し、
加熱が終了したダミー基板を熱処理炉内から搬出し、 以上の熱処理炉内へのダミー基板の搬入から熱処理炉内
からのダミー基板の搬出までの一連の単位工程を少なく
とも２回繰り返し、 熱処理炉内でのダミー基板の加熱の停止時点から、熱処
理炉内からのダミー基板の搬出後に熱処理炉内の温度が
一定の搬入温度になった時点までの時間を計測し、 各単位工程における計測時間の差を算出し、その差が所
定値以内になった時に予備加熱を終了することを特徴と
する基板の熱処理方法。10. A substrate to be preheated in a heat treatment furnace, finished when the atmosphere in the furnace reaches a predetermined state, and housed one substrate at a time in the heat treatment furnace for heat treatment. In the heat treatment method, the dummy substrate is loaded into the heat treatment furnace, and the dummy substrate housed in the heat treatment furnace is heated by a certain heating program,
The heated dummy substrate is unloaded from the heat treatment furnace, and the series of unit steps from loading the dummy substrate into the heat treatment furnace to unloading the dummy substrate is repeated at least twice, The time from when the heating of the dummy substrate was stopped to the time when the temperature in the heat treatment furnace reached a constant loading temperature after the dummy substrate was unloaded from the heat treatment furnace, and the difference in the measurement time in each unit process was measured. And a preheating is finished when the difference is within a predetermined value.
搬出する基板保持・搬出入手段と、 前記熱処理炉内に収容された基板を加熱する加熱手段
と、 前記熱処理炉内の温度を測定する測温手段と、 前記熱処理炉内に収容された基板を一定の加熱プログラ
ムにより加熱するように前記加熱手段を制御する加熱制
御手段とを備えた基板の熱処理装置において、 ダミー基板を収納する基板収納部と、 この収納部に収納されたダミー基板を前記基板保持・搬
出入手段へ移載する基板移載手段と、 ダミー基板を前記熱処理炉内へ搬入する搬入温度を指定
する搬入温度指定手段と、 前記測温手段によって測定された熱処理炉内の温度が、
前記搬入温度指定手段によって指定された搬入温度にな
ったことを判別する温度判別手段と、 この温度判別手段によって熱処理炉内の温度が一定の搬
入温度になったことが判別された時点でダミー基板を熱
処理炉内へ搬入するように前記基板保持・搬出入手段を
制御する基板搬入制御手段と、 熱処理炉内でのダミー基板の加熱の停止時点から、熱処
理炉内からのダミー基板の搬出後に熱処理炉内の温度が
前記搬入温度になった時点までの時間を計測する計時手
段と、 この計時手段によって計測された計測時間を記憶する記
憶手段と、 前記計時手段によって新たに計測された計測時間と前記
記憶手段に記憶された先の計測時間との差を算出し、そ
の差が所定値以内であるかどうかを判別する時間判別手
段と、 この時間判別手段によって計測時間の差が所定値以内に
なったことが判別された時点で予備加熱を終了させる予
備加熱終了制御手段とを設けたことを特徴とする基板の
熱処理装置。11. A heat treatment furnace for accommodating the substrates one by one, a substrate holding / removing means for retaining the substrates and carrying them into the heat treatment furnace, and unloading them from the heat treatment furnace, and the heat treatment furnace accommodated in the heat treatment furnace. Heating means for heating the substrate, temperature measuring means for measuring the temperature in the heat treatment furnace, and heating control means for controlling the heating means to heat the substrate accommodated in the heat treatment furnace according to a certain heating program. In a substrate heat treatment apparatus including: a substrate storage unit for storing a dummy substrate; a substrate transfer unit for transferring the dummy substrate stored in the storage unit to the substrate holding / loading / unloading unit; The temperature in the heat treatment furnace, which is measured by the temperature measurement means, and the temperature in the heat treatment furnace that specifies the temperature for carrying in the heat treatment furnace,
A temperature discriminating means for discriminating that the carry-in temperature designated by the carry-in temperature designating means has been reached, and a dummy substrate at the time when the temperature discriminating means discriminates that the temperature in the heat treatment furnace has reached a constant carry-in temperature. Substrate loading / unloading means for controlling the substrate holding / loading / unloading means so that the dummy substrate is loaded into the heat treatment furnace, and after the dummy substrate is unloaded from the heat treatment furnace after the dummy substrate heating is stopped in the heat treatment furnace. Time measuring means for measuring the time until the temperature in the furnace reaches the carry-in temperature, storage means for storing the measurement time measured by this time measuring means, and measurement time newly measured by the time measuring means A time discriminating means for calculating a difference from the previously measured time stored in the storage means and discriminating whether or not the difference is within a predetermined value; and measuring by the time discriminating means. Thermal processing apparatus of a substrate the difference between is characterized by providing a preheating termination control means for terminating the preheating when it is determined that becomes within a predetermined value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06191788A JP3102832B2 (en) | 1994-07-21 | 1994-07-21 | Heat treatment method and heat treatment apparatus for substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06191788A JP3102832B2 (en) | 1994-07-21 | 1994-07-21 | Heat treatment method and heat treatment apparatus for substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0837158A true JPH0837158A (en) | 1996-02-06 |
| JP3102832B2 JP3102832B2 (en) | 2000-10-23 |
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ID=16280554
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06191788A Expired - Fee Related JP3102832B2 (en) | 1994-07-21 | 1994-07-21 | Heat treatment method and heat treatment apparatus for substrate |
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