JPH1038702A - Substrate temperature measuring method, substrate temperature controlling method, and substrate treatment equipment using the same - Google Patents
Substrate temperature measuring method, substrate temperature controlling method, and substrate treatment equipment using the sameInfo
- Publication number
- JPH1038702A JPH1038702A JP18935996A JP18935996A JPH1038702A JP H1038702 A JPH1038702 A JP H1038702A JP 18935996 A JP18935996 A JP 18935996A JP 18935996 A JP18935996 A JP 18935996A JP H1038702 A JPH1038702 A JP H1038702A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- temperature
- measured temperatures
- contact
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Measuring Temperature Or Quantity Of Heat (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体基板にア
ニール処理やＣＶＤ処理などの加熱を伴う処理を施す際
の基板温度計測方法および基板温度制御方法、並びに、
これを利用した基板処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring a substrate temperature and a method for controlling a substrate temperature when a process involving heating such as an annealing process or a CVD process is performed on a semiconductor substrate, and
The present invention relates to a substrate processing apparatus using the same.
【０００２】[0002]
【従来の技術】半導体基板（以下、「基板」という。）
にアニール処理やＣＶＤ処理などといった加熱を伴う処
理を施す場合、処理の適否は処理中の基板の温度に大き
く左右される。したがって、処理中の基板の温度計測は
基板の品質を管理する上で重要な管理要素となってい
る。2. Description of the Related Art Semiconductor substrates (hereinafter referred to as "substrates").
When a process involving heating such as an annealing process or a CVD process is performed on a substrate, the suitability of the process largely depends on the temperature of the substrate being processed. Therefore, temperature measurement of a substrate during processing is an important management factor in managing the quality of the substrate.
【０００３】基板の温度計測方法には、大きく分けて熱
電対を利用した接触式の温度計測方法と放射温度計を用
いる非接触式の温度計測方法とがある。接触式の温度計
測は非接触式の温度計測に比べて基板を直接接触して計
測するため、正確な温度計測が可能であるという長所を
有している。このような長所を利用した接触式温度計測
方法の一例を図５に示す。図５に示す計測方法では接触
式温度計１２１を基板１０９の周縁部下方から支持する
ように接触させて接触部位の温度を計測している。ま
た、接触式温度計１２１は基板１０９の温度計測を行う
とともに基板１０９を支持する手段としても用いられて
おり、基板１０９はこの接触式温度計１２１と２つの基
板支持部１０３によって支持されるようになっている。The temperature measurement method for a substrate is roughly classified into a contact-type temperature measurement method using a thermocouple and a non-contact-type temperature measurement method using a radiation thermometer. The contact-type temperature measurement has an advantage that accurate temperature measurement is possible because the measurement is performed by directly contacting the substrate, as compared with the non-contact temperature measurement. An example of a contact-type temperature measurement method utilizing such advantages is shown in FIG. In the measurement method shown in FIG. 5, the contact-type thermometer 121 is contacted so as to be supported from below the peripheral portion of the substrate 109, and the temperature of the contact portion is measured. The contact thermometer 121 measures the temperature of the substrate 109 and is also used as a means for supporting the substrate 109. The substrate 109 is supported by the contact thermometer 121 and the two substrate supporting portions 103. It has become.
【０００４】もちろん、このような計測では基板１０９
の温度は温度計１２１との接触部位でしか計測できない
ので、基板の全面において適切な処理が施されるように
予め装置自体の調整を行っておく必要がある。すなわ
ち、多数の熱電対を取り付けたダミーの基板を用いて温
度を計測をしたり、実際にダミーの基板に処理を施し、
この処理の具合の観察結果に基づいて基板全体に適切に
処理が施されるように加熱手段や処理室内部の構造を予
め調整しておくのである。そして、調整後の装置におい
て、図５に示すように基板１０９と温度計１２１との接
触部位の温度を計測することにより、処理が適切に施さ
れているかどうかを管理することとしている。Of course, in such measurement, the substrate 109
Can be measured only at the site of contact with the thermometer 121, so that the apparatus itself needs to be adjusted in advance so that appropriate processing is performed on the entire surface of the substrate. That is, the temperature is measured using a dummy substrate to which a large number of thermocouples are attached, or the process is actually performed on the dummy substrate,
The heating means and the structure inside the processing chamber are adjusted in advance so that the entire substrate is appropriately processed based on the observation result of the state of the processing. Then, in the device after the adjustment, as shown in FIG. 5, by measuring the temperature of the contact portion between the substrate 109 and the thermometer 121, it is determined whether or not the processing is properly performed.
【０００５】[0005]
【発明が解決しようとする課題】以上説明してきたよう
に、加熱を伴う処理が施される基板の温度管理方法とし
て、接触式温度計を用いて基板の温度を計測する方法が
ある。しかし、この方法は、基板の１箇所のみの温度を
計測するため基板全体において常に適切な温度分布とな
っているという保証はない。なぜならば、予め装置を調
整しておいても、装置内部の経時変化や基板個々の特性
の相違や突発的なトラブルにより装置内部の状態は常に
一定であるとはいえないからである。また、近年の基板
のパターンの細密化によりこの問題は益々重要な課題と
なっている。As described above, as a method of controlling the temperature of a substrate to be subjected to a process involving heating, there is a method of measuring the temperature of the substrate using a contact-type thermometer. However, since this method measures the temperature of only one portion of the substrate, there is no guarantee that the temperature distribution is always appropriate over the entire substrate. This is because, even if the apparatus is adjusted in advance, the state inside the apparatus is not always constant due to the aging of the inside of the apparatus, differences in characteristics of individual substrates, and sudden troubles. In addition, this problem has become an increasingly important problem due to recent miniaturization of the pattern of the substrate.
【０００６】そこで、この発明は、上記課題に鑑みなさ
れたもので、接触式温度計を用いて基板を計測するとと
もに、この計測結果を用いて基板の品質管理の向上を図
ることができ、さらに、基板の品質および歩留りの向上
を図ることができる基板温度計測方法および基板温度制
御方法、並びに、これを利用した基板処理装置を提供す
ることを目的とする。The present invention has been made in view of the above problems, and it is possible to measure a substrate using a contact-type thermometer and to improve the quality control of the substrate using the measurement result. It is an object of the present invention to provide a substrate temperature measurement method and a substrate temperature control method capable of improving the quality and yield of a substrate, and a substrate processing apparatus using the same.
【０００７】[0007]
【課題を解決するための手段】請求項１の発明は、加熱
を伴う処理が施される基板の温度を計測する基板温度計
測方法であって、複数の接触式温度計を用いて前記基板
の複数箇所の温度を計測し、複数の計測温度を取得する
温度計測工程を有する。A first aspect of the present invention is a substrate temperature measuring method for measuring the temperature of a substrate to be subjected to a process involving heating, wherein the substrate temperature is measured using a plurality of contact thermometers. The method includes a temperature measurement step of measuring temperatures at a plurality of locations and acquiring a plurality of measured temperatures.
【０００８】請求項２の発明は、請求項１記載の基板温
度計測方法であって、前記複数の計測温度を表示する表
示工程をさらに有する。According to a second aspect of the present invention, there is provided the substrate temperature measuring method according to the first aspect, further comprising a display step of displaying the plurality of measured temperatures.
【０００９】請求項３の発明は、請求項１または２記載
の基板温度計測方法であって、前記複数の計測温度から
前記基板の温度分布の異常を検出する異常検出工程をさ
らに有する。A third aspect of the present invention is the substrate temperature measuring method according to the first or second aspect, further comprising an abnormality detecting step of detecting an abnormality in the temperature distribution of the substrate from the plurality of measured temperatures.
【００１０】請求項４の発明は、請求項３記載の基板温
度計測方法であって、前記異常検出工程が、前記複数の
計測温度のうち、最大値と最小値との差が所定の値より
大きいときに前記基板の温度分布を異常と判断する。According to a fourth aspect of the present invention, in the substrate temperature measuring method according to the third aspect, the abnormality detecting step determines that a difference between a maximum value and a minimum value of the plurality of measured temperatures is smaller than a predetermined value. When it is larger, the temperature distribution of the substrate is determined to be abnormal.
【００１１】請求項５の発明は、複数の加熱手段により
加熱される基板の温度を制御する基板温度制御方法であ
って、複数の接触式温度計を用いて前記基板の複数箇所
の温度を計測し、複数の計測温度を取得する温度計測工
程と、前記複数の計測温度に基づいて前記複数の加熱手
段のそれぞれに与える電力を求める温度制御工程とを有
する。A fifth aspect of the present invention is a substrate temperature control method for controlling the temperature of a substrate heated by a plurality of heating means, wherein the temperature of a plurality of locations on the substrate is measured using a plurality of contact thermometers. And a temperature control step of obtaining a plurality of measured temperatures and a temperature control step of obtaining electric power to be applied to each of the plurality of heating means based on the plurality of measured temperatures.
【００１２】請求項６の発明は、請求項５記載の基板温
度制御方法であって、前記制御工程が、前記複数の計測
温度のうちの１つの値に基づいて、前記複数の加熱手段
に与えられる総電力を求める総電力制御工程を有する。According to a sixth aspect of the present invention, there is provided the substrate temperature control method according to the fifth aspect, wherein the controlling step includes providing the plurality of heating means based on one of the plurality of measured temperatures. A total power control step of determining the total power to be obtained.
【００１３】請求項７の発明は、基板に加熱を伴う処理
を施す基板処理装置であって、前記基板を加熱する加熱
手段と、前記基板の温度を接触して計測する複数の接触
式温度計とを備える。According to a seventh aspect of the present invention, there is provided a substrate processing apparatus for performing a process involving heating on a substrate, comprising: a heating means for heating the substrate; and a plurality of contact-type thermometers for measuring the temperature of the substrate by contacting the same. And
【００１４】請求項８の発明は、請求項７記載の基板処
理装置であって、前記複数の接触式温度計から取得され
る複数の計測温度に基づいて前記基板の温度分布の異常
を検出する異常検出手段をさらに備える。According to an eighth aspect of the present invention, in the substrate processing apparatus according to the seventh aspect, an abnormality in the temperature distribution of the substrate is detected based on a plurality of measured temperatures obtained from the plurality of contact thermometers. The apparatus further includes abnormality detection means.
【００１５】請求項９の発明は、請求項７記載の基板処
理装置であって、前記加熱手段が複数であり、前記複数
の計測温度に基づいて前記複数の加熱手段のそれぞれに
与える電力を求める温度制御手段をさらに備える。According to a ninth aspect of the present invention, there is provided the substrate processing apparatus according to the seventh aspect, wherein the plurality of heating means are provided, and electric power applied to each of the plurality of heating means is obtained based on the plurality of measured temperatures. Temperature control means is further provided.
【００１６】[0016]
【発明の実施の形態】図１はこの発明に係る一の実施の
形態である基板処理装置１の側方からの断面の概略を示
した図である。この装置は基板９を加熱手段であるラン
プ１５を用いて加熱するＲＴＰ（Rapid Thermal Proces
sing）装置であり、処理対象である基板９は上方に開口
を有する本体部１１とこの開口を塞ぐように配置される
石英窓１３とにより形成される処理空間ＳＰ内部にて処
理されるようになっている。石英窓１３の上方には石英
窓１３を覆うように蓋部１２が配置され、蓋部１２下方
には加熱手段であるランプ１５が配置されている。ま
た、本体部１１には、基板９の搬出入する際の出入り口
である搬入口３３、基板への処理ガスを供給する供給口
３１、および、処理空間ＳＰ内部のガスを排気する排気
口３２が設けられている。FIG. 1 is a view schematically showing a cross section from the side of a substrate processing apparatus 1 according to one embodiment of the present invention. This apparatus heats a substrate 9 using a lamp 15 as a heating means.
sing) apparatus, in which a substrate 9 to be processed is processed in a processing space SP formed by a main body 11 having an opening above and a quartz window 13 arranged to close the opening. Has become. A lid 12 is arranged above the quartz window 13 so as to cover the quartz window 13, and a lamp 15 as heating means is arranged below the lid 12. Further, the main body 11 includes a carry-in port 33 which is an entrance / exit when loading / unloading the substrate 9, a supply port 31 for supplying a processing gas to the substrate, and an exhaust port 32 for exhausting a gas inside the processing space SP. Is provided.
【００１７】処理空間ＳＰ内部下方には基板９を支持す
る支持本体１６が設けられ、この支持本体１６上には３
つの接触式温度計２１ａ、２１ｂ、２１ｃが取り付けら
れたリング状の均熱リング１７が配置されている。均熱
リング１７は図２に示すように基板９の側方周囲を取り
囲むような板状の形状をしており、基板９を見かけ上大
きくして中心付近に配置された基板９の温度分布を均一
にするためのものである。さらに、その上端面にて基板
９の裏面中心付近を接触支持する接触式温度計２１ｄ
が、後述するベース部材１８を貫通するかたちで配置さ
れている。この均熱リング１７に取り付けられた接触式
温度計２１ａ〜２１ｃは先端にて基板９を接触支持し、
基板を支持するとともに温度計測を行うようになってお
り、接触式温度計２１ｄはその上端面にて基板９の裏面
中心付近の温度計測を行うようになっている。A support body 16 for supporting the substrate 9 is provided below the inside of the processing space SP.
A ring-shaped soaking ring 17 to which two contact thermometers 21a, 21b, 21c are attached is arranged. The heat equalizing ring 17 has a plate-like shape surrounding the side periphery of the substrate 9 as shown in FIG. 2, and increases the apparent appearance of the substrate 9 to reduce the temperature distribution of the substrate 9 arranged near the center. This is for uniformity. Further, a contact-type thermometer 21d for contacting and supporting near the center of the back surface of the substrate 9 at the upper end surface
Are arranged so as to penetrate a base member 18 described later. The contact thermometers 21a to 21c attached to the heat equalizing ring 17 support the substrate 9 at the tips thereof,
The contact type thermometer 21d measures the temperature near the center of the rear surface of the substrate 9 at the upper end surface thereof while supporting the substrate and measuring the temperature.
【００１８】なお、処理空間ＳＰの下方および側方には
石英からなるベース部材１８およびライナー１４が設け
られており、本体部１１内部の底面および側面からの汚
染物質の発生や侵入を防止している。また、蓋部１２に
設けられたランプ１５は図３に示すように格子状に８本
設けられており、蓋部１２内部にはこれらのランプ１５
(1)〜１５(8)から受ける熱を排出するための冷却水路１
９が設けられている。A base member 18 and a liner 14 made of quartz are provided below and beside the processing space SP to prevent generation and intrusion of contaminants from the bottom and side surfaces inside the main body 11. I have. As shown in FIG. 3, eight lamps 15 provided on the lid 12 are provided in a grid pattern.
Cooling channel 1 for discharging heat received from (1) to 15 (8)
9 are provided.
【００１９】以上がこの基板処理装置１の構成の概要で
あるが、次に、この装置の動作の概略について説明す
る。The above is the outline of the configuration of the substrate processing apparatus 1. Next, the outline of the operation of the apparatus will be described.
【００２０】この装置では、まず、基板９は搬入口３３
から矢印Ａに沿ってロボットハンド（図示省略）により
搬入され、接触式温度計２１ａ〜２１ｄ上に載置され
る。基板９の搬入が完了すると搬入口３３をシャッタ
（図示省略）により塞ぎ、処理空間ＳＰを密閉する。そ
して、所定の処理ガスを供給口３１から矢印Ｆ１に沿っ
て供給し、また、必要ならば処理空間ＳＰ内のガスを排
気口３２から矢印Ｆ２に沿って排気して処理空間ＳＰ内
の雰囲気を処理に適した状態とする。In this apparatus, first, the substrate 9 is loaded into the loading port 33.
Is carried in by a robot hand (not shown) along arrow A, and is placed on the contact type thermometers 21a to 21d. When the loading of the substrate 9 is completed, the loading port 33 is closed by a shutter (not shown), and the processing space SP is sealed. Then, a predetermined processing gas is supplied from the supply port 31 along the arrow F1, and if necessary, the gas in the processing space SP is exhausted from the exhaust port 32 along the arrow F2 to reduce the atmosphere in the processing space SP. Make it suitable for processing.
【００２１】基板９の処理環境が整うと、ランプ１５を
点灯し、基板９に石英窓１３を介して光Ｌを照射して加
熱を伴う処理を施す。このとき、加熱と同時に基板９の
温度を接触式温度計２１ａ〜２１ｄを用いて計測すると
ともに、この計測結果に基づいてランプ１５へ与える電
力を制御することにより、基板９の温度分布が調整され
る。When the processing environment of the substrate 9 is set, the lamp 15 is turned on and the substrate 9 is irradiated with light L through the quartz window 13 to perform a process involving heating. At this time, the temperature of the substrate 9 is measured by using the contact thermometers 21a to 21d at the same time as the heating, and the power distribution to the lamp 15 is controlled based on the measurement result, whereby the temperature distribution of the substrate 9 is adjusted. You.
【００２２】基板９の加熱を伴う処理が完了すると搬入
口３３のシャッタが開きロボットハンドにより基板９が
矢印Ａと反対方向に沿って取り出され、次の基板の処理
を待つ状態となる。When the processing involving the heating of the substrate 9 is completed, the shutter of the entrance 33 is opened and the substrate 9 is taken out by the robot hand in the direction opposite to the arrow A, and a state of waiting for the processing of the next substrate is set.
【００２３】次に、この装置の温度計測方法および温度
制御動作について説明する。図４はこの装置の温度計測
方法および温度制御動作を示すブロック図であり、接触
式温度計２１ａ〜２１ｄからの出力信号が計測制御部４
に入力され、計測制御部４から各ランプに与えるべき電
力であるランプ電力ＱL1〜ＱL8を示す信号がランプ電源
５１に入力される様子を示している。Next, a temperature measuring method and a temperature control operation of the apparatus will be described. FIG. 4 is a block diagram showing a temperature measurement method and a temperature control operation of this apparatus. The output signals from the contact thermometers 21a to 21d are output from the measurement control unit 4.
And signals indicating lamp powers QL1 to QL8, which are powers to be given to the respective lamps, from the measurement controller 4 are input to the lamp power supply 51.
【００２４】計測制御部４は接触式温度計２１ａ〜２１
ｄからの出力信号より、温度分布の異常を検出する偏差
警報検出部４１、温度情報や警報を表示する表示部４１
ａ、基板９全体の温度を調整する目標温度制御部４２、
基板９の温度分布を制御する目標温度分布制御部４３、
および、各ランプに与える電力を算出するランプ電力演
算部４４から構成される。The measurement control unit 4 includes contact thermometers 21 a to 21
deviation alarm detection unit 41 for detecting an abnormality in the temperature distribution from the output signal from d, and a display unit 41 for displaying temperature information and an alarm
a, a target temperature control unit 42 for adjusting the temperature of the entire substrate 9;
A target temperature distribution control unit 43 for controlling the temperature distribution of the substrate 9;
And a lamp power calculator 44 for calculating power to be applied to each lamp.
【００２５】まず、４つの接触式温度計２１ａ〜２１ｄ
からの出力信号がそれぞれ増幅器２２を介して計測温度
Ｔａ〜Ｔｄを示す信号として偏差警報検出部４１に入力
される。偏差警報検出部４１では、計測温度Ｔａ〜Ｔｄ
に基づいて基板９の温度分布の異常を検出する。具体的
には、４つの計測温度Ｔａ〜Ｔｄのうち、最大のものと
最小のものとの差を求め、この差が所定の値を越える場
合に温度分布が異常であると検出する。また、これらの
計測温度Ｔａ〜Ｔｄおよび温度分布の異常の検出の有無
の情報は表示部４１ａに送られ表示される。これによ
り、異常の検出が確認できるとともに、異常検出時の状
態や運転中の装置の状態を計測温度Ｔａ〜Ｔｄの表示を
見ることによりリアルタイムに、あるいは、処理後に確
認することができる。First, four contact thermometers 21a to 21d
Are input to the deviation alarm detection unit 41 via the amplifier 22 as signals indicating the measured temperatures Ta to Td, respectively. In the deviation alarm detection unit 41, the measured temperatures Ta to Td
The abnormality of the temperature distribution of the substrate 9 is detected based on Specifically, of the four measured temperatures Ta to Td, the difference between the largest one and the smallest one is obtained, and if this difference exceeds a predetermined value, it is detected that the temperature distribution is abnormal. The information on whether or not the measured temperatures Ta to Td and the abnormality in the temperature distribution have been detected is sent to the display unit 41a and displayed. Thus, the detection of the abnormality can be confirmed, and the state at the time of abnormality detection and the state of the operating apparatus can be confirmed in real time by checking the display of the measured temperatures Ta to Td or after the processing.
【００２６】以上がこの装置の温度計測方法と温度分布
の異常の検出方法であるが、この装置ではさらにこの計
測温度を利用して基板９の温度分布の制御が以下のよう
にして行われる。The method of measuring the temperature of the apparatus and the method of detecting an abnormality in the temperature distribution have been described above. In this apparatus, the temperature distribution of the substrate 9 is further controlled using the measured temperature as follows.
【００２７】まず、接触式温度計２１ａからの計測温度
Ｔａを基板９の基準の温度であるとみなし、この計測温
度Ｔａと目標温度制御部４２内部において予め格納され
ている目標温度Ｔｏとを比較する。目標温度Ｔｏは処理
開始時刻からの経過時間の関数となっており、この関数
に沿って計測温度Ｔａが変化するようにランプ全体に与
えるべき総電力であるランプ総電力Ｑが求められる。First, the measured temperature Ta from the contact-type thermometer 21a is regarded as the reference temperature of the substrate 9, and this measured temperature Ta is compared with a target temperature To stored in the target temperature control section 42 in advance. I do. The target temperature To is a function of the time elapsed from the processing start time, and the lamp total power Q, which is the total power to be applied to the entire lamp, is determined along this function so that the measured temperature Ta changes.
【００２８】また、ランプ総電力Ｑが求められる一方
で、目標温度分布制御部４３においてランプ１５から与
えられるエネルギーを各温度計２１ａ〜２１ｄの計測す
る領域付近にどのように配分しするかを決定する配分係
数Ｋqa〜Ｋqdが求められる。この配分係数Ｋqa〜Ｋqd
は、目標温度分布制御部４３内部に予め記憶されている
基板の目標とする温度分布偏差と各計測温度Ｔａ〜Ｔｄ
から求められる温度分布偏差とを比較することにより求
められるものである。Further, while the lamp total power Q is obtained, the target temperature distribution control unit 43 determines how the energy given from the lamp 15 is distributed to the vicinity of the area measured by each of the thermometers 21a to 21d. Distribution coefficients Kqa to Kqd are calculated. The distribution coefficients Kqa to Kqd
Is the target temperature distribution deviation of the substrate stored in advance in the target temperature distribution control unit 43 and each of the measured temperatures Ta to Td.
Is obtained by comparing the temperature distribution deviation obtained from the above.
【００２９】各制御部において求められたランプ総電力
Ｑおよび配分係数Ｋqa〜Ｋqdはランプ電力演算部４４に
送られ、ここで、各ランプ１５(1)〜１５(8)に供給され
るべき電力であるランプ電力ＱL1〜ＱL8が求められる。
この実施の形態では８本のランプ１５が図３に示すよう
に格子状に配置されているため、図３中ＸおよびＹの方
向におけるランプからのエネルギーの配分を配分係数Ｋ
qa〜Ｋqdより求め、Ｘ方向の配分に合わせてランプ１５
(5)〜１５(8)に与えるべきランプ電力ＱL5〜ＱL8を求
め、Ｙ方向の配分に合わせてランプ１５(1)〜１５(4)に
与えるべきランプ電力ＱL1〜ＱL4を求める。もちろん、
温度の計測位置やランプの配置の形態によっては配分係
数から各ランプに与えるべき電力を正確に求めることが
できない場合があるが、装置内部の形状やランプからの
光Ｌの反射状態を考慮して適宜算出方法は調整される。The total lamp power Q and the distribution coefficients Kqa to Kqd obtained in each control unit are sent to a lamp power calculation unit 44, where the power to be supplied to each lamp 15 (1) to 15 (8) Are obtained.
In this embodiment, since the eight lamps 15 are arranged in a grid as shown in FIG. 3, the distribution of energy from the lamps in the X and Y directions in FIG.
qa to Kqd, and ramp 15 according to the distribution in the X direction.
The lamp powers QL5 to QL8 to be applied to (5) to 15 (8) are obtained, and the lamp powers QL1 to QL4 to be applied to the lamps 15 (1) to 15 (4) are obtained in accordance with the distribution in the Y direction. of course,
Depending on the measurement position of the temperature and the arrangement of the lamps, it may not be possible to accurately determine the power to be applied to each lamp from the distribution coefficient, but in consideration of the internal shape of the device and the state of reflection of light L from the lamp. The calculation method is appropriately adjusted.
【００３０】ランプ電力演算部４４において求められた
ランプ電力ＱL1〜ＱL8を示す信号はランプ電源５１に送
られ、ランプ電源５１はこれらの電力を各ランプ１５
(1)〜１５(8)に与えて、ランプからの光Ｌが基板９に照
射されることとなる。これにより、基板９全体の温度お
よび温度分布が目標温度および目標温度分布に合わせて
能動的に調整されることとなる。Signals indicating the lamp powers QL1 to QL8 obtained by the lamp power calculator 44 are sent to the lamp power supply 51, and the lamp power supply 51
(1) to (15), the light L from the lamp is applied to the substrate 9. As a result, the temperature and temperature distribution of the entire substrate 9 are actively adjusted in accordance with the target temperature and the target temperature distribution.
【００３１】以上説明してきたように、この実施の形態
では、基板９の複数箇所の温度を計測することにより、
基板９の温度分布を取得することができ、基板９の処理
状態の適否を正確に把握することができる。これによ
り、１つの接触式温度計により基板９の温度を計測する
場合に比べて基板９の品質をより適切に管理することが
でき、品質管理の向上を図ることができる。As described above, in this embodiment, by measuring the temperature at a plurality of locations on the substrate 9,
The temperature distribution of the substrate 9 can be obtained, and the suitability of the processing state of the substrate 9 can be accurately grasped. Thereby, the quality of the substrate 9 can be more appropriately managed as compared with the case where the temperature of the substrate 9 is measured by one contact thermometer, and the quality control can be improved.
【００３２】また、この実施の形態では、複数の計測温
度を用いて複数のランプ１５に与える電力を制御するの
で、基板９の温度分布を適正に維持することができ、こ
れにより、基板９の品質および歩留りの向上を図ること
ができる。Further, in this embodiment, since the electric power applied to the plurality of lamps 15 is controlled using the plurality of measured temperatures, the temperature distribution of the substrate 9 can be properly maintained. Quality and yield can be improved.
【００３３】以上、この実施の形態における基板処理装
置１の温度計測方法および温度制御動作について説明し
てきたが、この発明は上記実施の形態に限定されるもの
ではない。Although the temperature measuring method and the temperature control operation of the substrate processing apparatus 1 according to this embodiment have been described above, the present invention is not limited to the above embodiment.
【００３４】例えば、上記実施の形態では、計測温度Ｔ
ａを用いてランプ総電力Ｑを求めているが、４つの計測
温度Ｔａ〜Ｔｄの平均値を基準としてランプ総電力Ｑを
求めるようにしてもよい。For example, in the above embodiment, the measured temperature T
Although the lamp total power Q is obtained using a, the lamp total power Q may be obtained based on the average value of the four measured temperatures Ta to Td.
【００３５】また、上記実施の形態では、接触式温度計
を４つ用いているが、もちろん４つに限定されるもので
はない。Although four contact thermometers are used in the above embodiment, the number of contact thermometers is not limited to four.
【００３６】また、上記実施の形態では、棒状のランプ
１５を８本用いているが、８本に限定されるものではな
いし、また、ランプの形状も棒状ではなく、球状のラン
プを用いるようにしてもよい。また、ランプを個別に制
御するのではなく、複数のランプをまとめて制御するよ
うにしてもよい。さらに、加熱手段はランプに限定され
るものではなく、例えば、電熱線によるヒータを用いる
ようにしてもよい。In the above embodiment, eight rod-shaped lamps 15 are used. However, the number of the lamps is not limited to eight, and the shape of the lamp is not a rod but a spherical lamp. You may. Instead of controlling the lamps individually, a plurality of lamps may be controlled collectively. Further, the heating means is not limited to a lamp, and for example, a heater using a heating wire may be used.
【００３７】また、上記実施の形態では表示部４１ａに
おいて計測温度や異常状態を表示するようにしている
が、異常状態が発生した場合に警報を鳴らすようにして
もよい。In the above embodiment, the measured temperature and the abnormal state are displayed on the display section 41a. However, an alarm may be sounded when an abnormal state occurs.
【００３８】さらに、上記実施の形態では、目標温度制
御部４２においてランプ総電力Ｑを求めているが、目標
温度分布制御部４３において各温度計近傍に与えるべき
エネルギーを求めた後に、ランプ総電力Ｑを求めるよう
にしてもよい。Further, in the above-described embodiment, the total lamp power Q is determined by the target temperature control section 42. However, after the target temperature distribution control section 43 determines the energy to be applied near each thermometer, the total lamp power Q is calculated. Q may be obtained.
【００３９】[0039]
【発明の効果】以上説明したように、請求項１記載の発
明では、複数の接触式温度計を用いて基板の複数箇所の
正確な温度を計測することができるので、基板の品質管
理の向上を図ることができる。As described above, according to the first aspect of the present invention, it is possible to use a plurality of contact thermometers to measure accurate temperatures at a plurality of locations on a substrate, thereby improving the quality control of the substrate. Can be achieved.
【００４０】請求項２記載の発明では、複数の接触式温
度計からの計測温度を表示器に表示するので、基板の処
理状態を迅速に把握することができ、その結果、基板の
品質管理の向上を図ることができる。According to the second aspect of the present invention, since the temperatures measured from the plurality of contact thermometers are displayed on the display, the processing state of the substrate can be quickly grasped, and as a result, the quality control of the substrate can be achieved. Improvement can be achieved.
【００４１】請求項３記載の発明では、基板の複数箇所
の計測温度から基板の温度分布の異常を検出することが
できるので、基板の品質管理の向上を図ることができ
る。According to the third aspect of the present invention, since an abnormality in the temperature distribution of the substrate can be detected from the measured temperatures at a plurality of locations on the substrate, the quality control of the substrate can be improved.
【００４２】請求項４記載の発明では、複数の計測温度
の最大値と最小値との差から基板の温度分布の異常を検
出するので、請求項３記載の発明の同様、基板の品質管
理の向上を図ることができる。According to the fourth aspect of the present invention, the abnormality in the temperature distribution of the substrate is detected from the difference between the maximum value and the minimum value of the plurality of measured temperatures. Improvement can be achieved.
【００４３】請求項５記載の発明では、複数の計測温度
から複数の加熱手段に与えるべき電力を求めるので、基
板の温度分布を制御することができ、その結果、基板の
品質および歩留りの向上を図ることができる。According to the fifth aspect of the present invention, since the power to be supplied to the plurality of heating means is obtained from the plurality of measured temperatures, the temperature distribution of the substrate can be controlled, and as a result, the quality of the substrate and the yield can be improved. Can be planned.
【００４４】請求項６記載の発明では、加熱手段に与え
るべき総電力を１つの計測温度から求めるので、請求項
５記載の発明の効果に加え、簡易に基板全体の温度を制
御することができる。According to the sixth aspect of the present invention, since the total power to be applied to the heating means is obtained from one measured temperature, the temperature of the entire substrate can be easily controlled in addition to the effect of the fifth aspect of the present invention. .
【００４５】請求項７記載の発明では、複数の接触式温
度計を備えているので、基板の複数箇所の温度を正確に
計測することができ、これにより、基板の品質管理の向
上を図ることができる。According to the seventh aspect of the present invention, since a plurality of contact thermometers are provided, it is possible to accurately measure the temperature of a plurality of portions of the substrate, thereby improving the quality control of the substrate. Can be.
【００４６】請求項８記載の発明では、複数の計測温度
から基板の温度分布の異常を検出することができるの
で、基板の品質管理の向上を図ることができる。According to the eighth aspect of the present invention, an abnormality in the temperature distribution of the substrate can be detected from a plurality of measured temperatures, so that quality control of the substrate can be improved.
【００４７】請求項９記載の発明では、複数の計測温度
から基板の温度分布を制御することができるので、基板
の品質および歩留りの向上を図ることができる。According to the ninth aspect of the present invention, the temperature distribution of the substrate can be controlled from a plurality of measured temperatures, so that the quality of the substrate and the yield can be improved.
【図１】この発明に係る一の実施の形態である基板処理
装置の断面図である。FIG. 1 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
【図２】接触式温度計の配置を示す斜視図である。FIG. 2 is a perspective view showing an arrangement of a contact thermometer.
【図３】ランプの配置を示す斜視図である。FIG. 3 is a perspective view showing an arrangement of a lamp.
【図４】計測制御部の構成を示すブロック図である。FIG. 4 is a block diagram illustrating a configuration of a measurement control unit.
【図５】従来の接触式温度計を用いた温度計測方法を示
す斜視図である。FIG. 5 is a perspective view showing a temperature measuring method using a conventional contact thermometer.
４ 計測制御部 ９ 基板 １５ ランプ ２１ａ、２１ｂ、２１ｃ、２１ｄ 接触式温度計 ４１ 偏差警報検出部 ４１ａ 表示部 ４２ 目標温度制御部 ４３ 目標温度分布制御部 ４４ ランプ電力演算部 Ｔａ、Ｔｂ、Ｔｃ、Ｔｄ 計測温度 Ｑ ランプ総電力 ＱL1〜ＱL8 ランプ電力 4 Measurement control unit 9 Substrate 15 Lamp 21a, 21b, 21c, 21d Contact thermometer 41 Deviation alarm detection unit 41a Display unit 42 Target temperature control unit 43 Target temperature distribution control unit 44 Lamp power calculation unit Ta, Tb, Tc, Td Measured temperature Q Lamp total power QL1 ~ QL8 Lamp power
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/26 Ｈ０１Ｌ 21/324 Ｄ 21/324 21/66 Ｔ 21/66 21/26 Ｌ (72)発明者 西原 英夫 京都市伏見区羽束師古川町322番地 大日 本スクリーン製造株式会社洛西事業所内 (72)発明者 中島 敏博 京都市伏見区羽束師古川町322番地 大日 本スクリーン製造株式会社洛西事業所内──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code Agency reference number FI Technical indication location H01L 21/26 H01L 21/324 D 21/324 21/66 T 21/66 21/26 L (72 ) Inventor Hideo Nishihara 322 Hashinashi Furukawa-cho, Fushimi-ku, Kyoto, Japan Dainippon Screen Manufacturing Co., Ltd. In business office
Claims (9)
計測する基板温度計測方法であって、 複数の接触式温度計を用いて前記基板の複数箇所の温度
を計測し、複数の計測温度を取得する温度計測工程、を
有することを特徴とする基板温度計測方法。1. A substrate temperature measuring method for measuring a temperature of a substrate to be subjected to a process involving heating, wherein a plurality of contact-type thermometers are used to measure temperatures at a plurality of locations on the substrate, and a plurality of measurements are performed. A substrate temperature measuring method, comprising: a temperature measuring step of acquiring a temperature.
て、 前記複数の計測温度を表示する表示工程、をさらに有す
ることを特徴とする基板温度計測方法。2. The substrate temperature measuring method according to claim 1, further comprising a display step of displaying the plurality of measured temperatures.
法であって、 前記複数の計測温度から前記基板の温度分布の異常を検
出する異常検出工程、をさらに有することを特徴とする
基板温度計測方法。3. The substrate temperature measuring method according to claim 1, further comprising an abnormality detecting step of detecting an abnormality in the temperature distribution of the substrate from the plurality of measured temperatures. Measurement method.
て、 前記異常検出工程が、前記複数の計測温度のうち、最大
値と最小値との差が所定の値より大きいときに前記基板
の温度分布を異常と判断することを特徴とする基板温度
計測方法。4. The substrate temperature measuring method according to claim 3, wherein the abnormality detecting step is performed when a difference between a maximum value and a minimum value of the plurality of measured temperatures is larger than a predetermined value. A temperature distribution of the substrate is determined to be abnormal.
温度を制御する基板温度制御方法であって、 複数の接触式温度計を用いて前記基板の複数箇所の温度
を計測し、複数の計測温度を取得する温度計測工程と、 前記複数の計測温度に基づいて前記複数の加熱手段のそ
れぞれに与える電力を求める温度制御工程と、を有する
ことを特徴とする基板温度制御方法。5. A substrate temperature control method for controlling a temperature of a substrate heated by a plurality of heating means, wherein a plurality of contact-type thermometers are used to measure the temperature at a plurality of locations on the substrate, and the plurality of measurements are performed. A substrate temperature control method, comprising: a temperature measurement step of acquiring a temperature; and a temperature control step of obtaining electric power to be applied to each of the plurality of heating units based on the plurality of measurement temperatures.
て、 前記制御工程が、 前記複数の計測温度のうちの１つの値に基づいて、前記
複数の加熱手段に与えられる総電力を求める総電力制御
工程、を有することを特徴とする基板温度制御方法。6. The substrate temperature control method according to claim 5, wherein the control step determines a total power supplied to the plurality of heating units based on one of the plurality of measured temperatures. A substrate temperature control method, comprising: a total power control step.
置であって、 前記基板を加熱する加熱手段と、 前記基板の温度を接触して計測する複数の接触式温度計
と、を備えることを特徴とする基板処理装置。7. A substrate processing apparatus for performing a process involving heating on a substrate, comprising: a heating unit for heating the substrate; and a plurality of contact thermometers for measuring the temperature of the substrate by contacting the substrate. A substrate processing apparatus characterized by the above-mentioned.
に基づいて前記基板の温度分布の異常を検出する異常検
出手段、をさらに備えることを特徴とする基板処理装
置。8. The substrate processing apparatus according to claim 7, further comprising: an abnormality detecting unit configured to detect an abnormality in a temperature distribution of the substrate based on a plurality of measured temperatures obtained from the plurality of contact thermometers. A substrate processing apparatus further provided.
れぞれに与える電力を求める温度制御手段、をさらに備
えることを特徴とする基板処理装置。9. The substrate processing apparatus according to claim 7, wherein the plurality of heating units are provided, and a temperature control unit that obtains electric power to be applied to each of the plurality of heating units based on the plurality of measured temperatures. A substrate processing apparatus further provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18935996A JPH1038702A (en) | 1996-07-18 | 1996-07-18 | Substrate temperature measuring method, substrate temperature controlling method, and substrate treatment equipment using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18935996A JPH1038702A (en) | 1996-07-18 | 1996-07-18 | Substrate temperature measuring method, substrate temperature controlling method, and substrate treatment equipment using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1038702A true JPH1038702A (en) | 1998-02-13 |
Family
ID=16240011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18935996A Pending JPH1038702A (en) | 1996-07-18 | 1996-07-18 | Substrate temperature measuring method, substrate temperature controlling method, and substrate treatment equipment using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1038702A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001168051A (en) * | 1999-12-06 | 2001-06-22 | Toshiba Ceramics Co Ltd | Method and apparatus of controlling up and down temperature for semiconductor substrate |
| KR100762157B1 (en) * | 2000-09-29 | 2007-10-01 | 가부시키가이샤 히다치 고쿠사이 덴키 | Temperature controlling method, thermal treating apparatus, and method of manufacturing semiconductor device |
| JP2010027846A (en) * | 2008-07-18 | 2010-02-04 | Kokusai Electric Semiconductor Service Inc | Substrate processing apparatus and manufacturing method for semiconductor device |
| US9290674B2 (en) | 2011-08-16 | 2016-03-22 | Shenzhen China Star Optoelectronics Technology Co. Ltd | Method for preparing a base film of modified polyvinyl alcohol polymer |
-
1996
- 1996-07-18 JP JP18935996A patent/JPH1038702A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001168051A (en) * | 1999-12-06 | 2001-06-22 | Toshiba Ceramics Co Ltd | Method and apparatus of controlling up and down temperature for semiconductor substrate |
| JP4480056B2 (en) * | 1999-12-06 | 2010-06-16 | コバレントマテリアル株式会社 | Method and apparatus for controlling temperature increase / decrease of semiconductor substrate |
| KR100762157B1 (en) * | 2000-09-29 | 2007-10-01 | 가부시키가이샤 히다치 고쿠사이 덴키 | Temperature controlling method, thermal treating apparatus, and method of manufacturing semiconductor device |
| JP2010027846A (en) * | 2008-07-18 | 2010-02-04 | Kokusai Electric Semiconductor Service Inc | Substrate processing apparatus and manufacturing method for semiconductor device |
| US9290674B2 (en) | 2011-08-16 | 2016-03-22 | Shenzhen China Star Optoelectronics Technology Co. Ltd | Method for preparing a base film of modified polyvinyl alcohol polymer |
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