JPH01205078A - Plasma cvd device - Google Patents
Plasma cvd deviceInfo
- Publication number
- JPH01205078A JPH01205078A JP2742388A JP2742388A JPH01205078A JP H01205078 A JPH01205078 A JP H01205078A JP 2742388 A JP2742388 A JP 2742388A JP 2742388 A JP2742388 A JP 2742388A JP H01205078 A JPH01205078 A JP H01205078A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- exhaust pipe
- plasma cvd
- vacuum
- exhaust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 15
- 239000007789 gas Substances 0.000 description 28
- 108091008695 photoreceptors Proteins 0.000 description 10
- 239000012495 reaction gas Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、電子写真感光体等の製造に使用されるプラズ
マＣＶＤ装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a plasma CVD apparatus used for manufacturing electrophotographic photoreceptors and the like.
従来の技術
従来、ケイ素系の感光層を有する電子写真感光体の製造
は、例えば、真空槽内に、回転可能な感光体ドラム保持
部材と、その周りに設けた円筒状又は円弧状電極とを配
設したプラズマＣＶＤ装置を用い、真空槽内を高真空に
した後、真空槽内に設けたガス導入口より反応ガスを導
入して、グロー放電分解させることにより、感光体ドラ
ム保持部材上に保持された導電性支持体上に非晶質膜を
形成させることによって行われている。2. Description of the Related Art Conventionally, electrophotographic photoreceptors having a silicon-based photoreceptor layer have been manufactured by, for example, placing a rotatable photoreceptor drum holding member and a cylindrical or arcuate electrode provided around it in a vacuum chamber. After creating a high vacuum in the vacuum chamber using the installed plasma CVD device, a reactive gas is introduced from the gas inlet provided in the vacuum chamber and decomposed by glow discharge, thereby forming a film on the photoreceptor drum holding member. This is done by forming an amorphous film on a held conductive support.
第３図は従来の容量結合型プラズマＣＶＤ装置の一例を
示す。１は真空反応槽であり、その中に、モータ８によ
り回転する円筒状の感光体保持部材２を載置し、一方、
複数のガス噴出孔６を設けた剛性の金属よりなる中空対
向電極３を、感光体保持部材上のドラム状導電性基板１
９に対向してそれを取り囲むように設置する。中空対向
電極３はＲＦ電源によって高周波電圧が印加されている
。真空反応槽内部は、高真空排気系１０に於いて、バル
ブ１１が設けられた高真空排気用の排気配管７を通して
高真空に排気され、その後、原料ガスを、ボンベ４から
ガス導入管５により導入し、ガス噴出孔から噴出し、ガ
ス排気系２０によりガスをガス排気用の排気配管１５を
通して排気しながらグロー放電を起こさせて、導電性基
板１９上に膜を堆積形成させる。FIG. 3 shows an example of a conventional capacitively coupled plasma CVD apparatus. 1 is a vacuum reaction tank, in which a cylindrical photoreceptor holding member 2 rotated by a motor 8 is placed;
A hollow counter electrode 3 made of a rigid metal provided with a plurality of gas ejection holes 6 is attached to a drum-shaped conductive substrate 1 on a photoreceptor holding member.
Place it facing 9 and surrounding it. A high frequency voltage is applied to the hollow counter electrode 3 by an RF power source. The inside of the vacuum reaction tank is evacuated to a high vacuum through a high vacuum evacuation pipe 7 provided with a valve 11 in a high vacuum evacuation system 10, and then raw material gas is introduced from a cylinder 4 through a gas introduction pipe 5. The gas is introduced and ejected from the gas ejection hole, and the gas is exhausted through the gas exhaust pipe 15 for gas exhaust by the gas exhaust system 20 to cause glow discharge, thereby depositing a film on the conductive substrate 19.
発明が解決しようとする課題
上記従来のプラズマＣＶＤ装置においては、高真空排気
用の排気配管の途中にバルブが設けられており、成膜時
に通路を遮断するように構成されている。ところが、排
気配管の途中にバルブが設けられている為に、バルブか
ら真空反応槽に至る排気配管の部分Ａがデッドスペース
になり、グロー放電を行なう際に、そのデッドスペース
のために、真空反応槽内の反応ガスの流れに滞留部分が
生じ、反応ガスの流れが乱されて均一な膜厚の感光層が
得られなくなるという問題があった。Problems to be Solved by the Invention In the conventional plasma CVD apparatus described above, a valve is provided in the middle of the exhaust piping for high vacuum evacuation, and is configured to block the passage during film formation. However, because the valve is installed in the middle of the exhaust piping, part A of the exhaust piping from the valve to the vacuum reaction tank becomes a dead space. There is a problem in that a stagnation portion occurs in the flow of the reaction gas in the tank, and the flow of the reaction gas is disturbed, making it impossible to obtain a photosensitive layer with a uniform thickness.
本発明は、従来の技術における上記のような問題点に鑑
みてなされたものでおる。The present invention has been made in view of the above-mentioned problems in the conventional technology.
したがって、本発明の目的は、均一な膜厚の感光層を形
成することのできるプラズマＣＶＤ装置を提供すること
におる。Therefore, an object of the present invention is to provide a plasma CVD apparatus that can form a photosensitive layer with a uniform thickness.
課題を解決するための手段
本発明のプラズマＣＶＤ装置は、真空反応槽内に、円筒
状又は円弧状電極が配設され、その円筒状又は円弧状電
極の内側に、回転可能な感光体ドラム保持部材が設けら
れてあり、そして、この真空反応槽壁部には、高真空排
気用の排気配管及びガス排気用の排気配管が接続された
構成を有している。そして本発明における特徴点は、そ
の真空反応槽と高真空排気用の排気配管との接続部分に
ゲートバルブを設けた点におる。Means for Solving the Problems In the plasma CVD apparatus of the present invention, a cylindrical or arc-shaped electrode is disposed in a vacuum reaction tank, and a rotatable photoreceptor drum holder is mounted inside the cylindrical or arc-shaped electrode. A member is provided, and an exhaust pipe for high vacuum exhaust and an exhaust pipe for gas exhaust are connected to the wall of the vacuum reaction tank. A feature of the present invention is that a gate valve is provided at the connection between the vacuum reaction tank and the exhaust piping for high vacuum evacuation.
作用
本発明のプラズマＣＶＤ装置を用いて電子写真感光層を
形成する際には、まず感光体ドラム保持部材上に導電性
基板を載置し、ゲートバルブを開いて高真空排気用の排
気配管から排気し、真空反応槽内を高真空にした後、ゲ
ートバルブを閉じ、真空構内に反応ガス、例えばシラン
ガスを導入し、円筒状電極に設けられたガス噴出孔から
噴出させ、同時にガス排気用の排気配管より、このガス
を排気する。円筒状電極と導電性基板との間には、電界
が形成されているため、反応ガスのグロー放電分解が行
われ、導電性基板上に感光膜が形成される。本発明にお
いては、ゲートバルブが真空反応槽と高真空排気用の排
気配管との接続部分に設けられているので、従来のプラ
ズマＣＶＤ装置におけるような、デッドスペースがなく
、このため、反応ガスが滞留を起こすということがなく
、反応ガスは真空反応槽内をスムースに流れる。したが
って、感光膜は−様な条件で形成されることになる。Operation When forming an electrophotographic photosensitive layer using the plasma CVD apparatus of the present invention, first place the conductive substrate on the photosensitive drum holding member, open the gate valve, and drain from the exhaust piping for high vacuum exhaust. After evacuating and creating a high vacuum inside the vacuum reactor, the gate valve is closed, and a reaction gas, such as silane gas, is introduced into the vacuum chamber and is ejected from the gas outlet provided in the cylindrical electrode. This gas is exhausted from the exhaust pipe. Since an electric field is formed between the cylindrical electrode and the conductive substrate, the reactive gas is decomposed by glow discharge, and a photoresist film is formed on the conductive substrate. In the present invention, since the gate valve is provided at the connection between the vacuum reaction tank and the exhaust piping for high vacuum evacuation, there is no dead space unlike in conventional plasma CVD equipment, and therefore the reaction gas is The reaction gas flows smoothly within the vacuum reactor without stagnation. Therefore, the photoresist film is formed under -like conditions.
実施例 以下、図面によって本発明を説明する。Example The present invention will be explained below with reference to the drawings.
第１図は、本発明のプラズマＣＶＤ装置の一実施例の概
略断面図であり、第２図はその横断面図である。FIG. 1 is a schematic sectional view of an embodiment of the plasma CVD apparatus of the present invention, and FIG. 2 is a cross-sectional view thereof.
１は、真空反応槽であり、その内部に、高周波電源９に
接続されたガス噴出孔６を有する中空円筒状電極３が配
設されている。この、中空円筒状電極の筒内には、モー
タ８によって回転する感光体ドラム保持部材２が設けら
れている。この真空反応槽１の壁部には、高真空排気用
の排気配管７がゲートバルブ１２を介して接続されてお
り、デイフュージョンポンプ１３及びロータリーポンプ
１４に接続している。更に真空反応槽１には、成膜中に
排気するためのガス排気系が設けられている。即ち、そ
の壁部にバルブ１６を備えたガス排気用の排気配管１５
が取り付けられており、その排気配管はメカニカルブー
スターポンプ１７及びロータリーポンプ１８に接続して
いる。Reference numeral 1 denotes a vacuum reaction tank, in which a hollow cylindrical electrode 3 having a gas ejection hole 6 connected to a high frequency power source 9 is disposed. A photosensitive drum holding member 2 rotated by a motor 8 is provided inside the hollow cylindrical electrode. An exhaust pipe 7 for high vacuum evacuation is connected to the wall of the vacuum reaction tank 1 via a gate valve 12, and is connected to a diffusion pump 13 and a rotary pump 14. Furthermore, the vacuum reaction chamber 1 is provided with a gas exhaust system for exhausting gas during film formation. That is, an exhaust pipe 15 for gas exhaust equipped with a valve 16 on its wall.
is attached, and its exhaust pipe is connected to a mechanical booster pump 17 and a rotary pump 18.
尚、本発明において用いるゲートバルブは公知のもので
あって、シャッター状のゲートが摺動してバルブの開閉
を行なう形式のものならば、どの様なものを使用しても
よい。Incidentally, the gate valve used in the present invention may be of any known type as long as it has a shutter-like gate that slides to open and close the valve.
上記のプラズマＣＶＤ装置を用いて電子写真感光体を製
造するには、感光体ドラム保持部材２上に導電性基板１
９を載置する。ゲートバルブ１２を開いてデイフュージ
ョンポンプ１３及びロータリーポンプ１４を作動させ、
排気筒７から真空反応槽内を、例えば１０−６Ｔｏｒｒ
程度の高真空に排気する。次いで、ゲートバルブ１２を
閉じた後、例えばシランガスをカス導入管５によって中
空円筒状電極３内に導入し、ガス噴出孔６より中空円筒
状電極３内に噴出させる。感光体ドラム保持部材は、モ
ータ８によって回転させる。中空円筒状電極３には、高
周波電源９によって所定の電力が供給されているため、
円筒状電極と、接地電圧に維持されている導電性基板と
の間でグロー放電が起こり、シランガスを分解して導電
性基板上に非晶質ケイ素膜が形成する。成膜中は、真空
反応槽内を排気する。In order to manufacture an electrophotographic photoreceptor using the plasma CVD apparatus described above, a conductive substrate 1 is placed on a photoreceptor drum holding member 2.
Place 9. Open the gate valve 12 and operate the diffusion pump 13 and rotary pump 14,
The inside of the vacuum reaction tank is heated from the exhaust pipe 7 to, for example, 10-6 Torr.
Evacuate to a moderately high vacuum. Next, after closing the gate valve 12, for example, silane gas is introduced into the hollow cylindrical electrode 3 through the waste introduction pipe 5, and is ejected into the hollow cylindrical electrode 3 through the gas injection hole 6. The photosensitive drum holding member is rotated by a motor 8. Since the hollow cylindrical electrode 3 is supplied with a predetermined power by the high frequency power source 9,
A glow discharge occurs between the cylindrical electrode and the conductive substrate maintained at ground voltage, decomposing the silane gas and forming an amorphous silicon film on the conductive substrate. During film formation, the inside of the vacuum reaction tank is evacuated.
即ら、メカニカルブースターポンプ１７及びロータリー
ポンプ１８を作動させ、バルブ１６を開いて排気管１５
より所定の真空度、例えばＩＴｏｒｒ程度に保持する。That is, the mechanical booster pump 17 and the rotary pump 18 are operated, the valve 16 is opened, and the exhaust pipe 15 is opened.
The degree of vacuum is maintained at a predetermined level, for example, about ITorr.
本発明の上記プラズマＣＶＤ装置においては、ゲートバ
ルブが真空反応槽１と排気配管７との接続部分に設けら
れているので、成膜中、真空反応槽内に反応ガスの滞留
する部分がなくなり、反応ガスは真空反応槽内を滞留を
起こすことなくスムースに流れる。したがって、感光膜
は−様な条件で形成されることになる。尚、通常、ガス
排気用の排気配管１５は高真空排気用の排気配管７に比
較して直径が小さいために、反応ガスの流れを乱す程の
影響を与えることはないので、ゲートバルブを設ける必
要はない。むしろ、この排気管との接続部分にゲートバ
ルブを設けると、排気ガス中に含まれる反応生成物の粉
等の為にゲートの摺動が困難になる場合が生じる。In the plasma CVD apparatus of the present invention, since the gate valve is provided at the connection between the vacuum reaction tank 1 and the exhaust pipe 7, there is no part where reaction gas stays in the vacuum reaction tank during film formation. The reaction gas flows smoothly within the vacuum reactor without stagnation. Therefore, the photoresist film is formed under -like conditions. Note that since the exhaust pipe 15 for gas exhaust usually has a smaller diameter than the exhaust pipe 7 for high vacuum exhaust, a gate valve is provided because it does not have a significant effect on the flow of the reaction gas. There's no need. On the contrary, if a gate valve is provided at the connection portion with the exhaust pipe, it may become difficult to slide the gate due to powder of reaction products contained in the exhaust gas.
発明の効果
本発明のプラズマＣＶＤ装置は、上記の様に、真空反応
槽と高真空排気用の排気配管との接続部分にゲートバル
ブを設けてなるから、電子写真感光層を形成する場合、
反応ガスの滞留がないので、ガス流の流れが乱れること
がない。したがって、常に均一な膜厚の電子写真感光層
を形成することができる。Effects of the Invention As described above, the plasma CVD apparatus of the present invention is provided with a gate valve at the connection part between the vacuum reaction tank and the exhaust piping for high vacuum evacuation, so when forming an electrophotographic photosensitive layer,
Since there is no stagnation of reaction gas, the gas flow is not disturbed. Therefore, an electrophotographic photosensitive layer with a uniform thickness can always be formed.
第１図は本発明の一実施例の概略断面図、第２図は第１
図のＡ−Ａ線の横断面図、第３図は従来のプラズマＣＶ
Ｄ装置の構成図である。
１・・・真空反応槽、２・・・感光体ドラム保持部材、
３・・・中空円筒状電極、４・・・ボンベ、５・・・ガ
ス導入管、６・・・ガス噴出孔、７・・・排気配管、８
・・・モータ、９・・・高周波電源、１０・・・高真空
排気系、１１・・・バルブ、１２・・・ゲートバルブ、
１３・・・デイフュージョンポンプ、１４・・・ロータ
リーポンプ、１５・・・排気配管、１６・・・バルブ、
１７・・・メカニカルブースターポンプ、１８・・・ロ
ータリーポンプ、１９・・・導電性基板、２０・・・排
気系。
特許出願人 富士ゼロックス株式会社代理人
弁理士 眼部 剛
節１図
第２図FIG. 1 is a schematic sectional view of one embodiment of the present invention, and FIG.
A cross-sectional view taken along line A-A in the figure, Figure 3 is a conventional plasma CV
It is a block diagram of D apparatus. 1... Vacuum reaction tank, 2... Photosensitive drum holding member,
3...Hollow cylindrical electrode, 4...Cylinder, 5...Gas introduction pipe, 6...Gas blowout hole, 7...Exhaust pipe, 8
...Motor, 9...High frequency power supply, 10...High vacuum exhaust system, 11...Valve, 12...Gate valve,
13...Diffusion pump, 14...Rotary pump, 15...Exhaust piping, 16...Valve,
17... Mechanical booster pump, 18... Rotary pump, 19... Conductive substrate, 20... Exhaust system. Patent applicant Fuji Xerox Co., Ltd. Agent
Patent Attorney Eye Part 1 Figure 2
Claims (1)
、該円筒状又は円弧状電極の内側に、回転可能な感光体
ドラム保持部材を配設し、該真空反応槽壁部に高真空排
気用の排気配管及びガス排気用の排気配管を別々に接続
してなるプラズマＣＶＤ装置において、該真空反応槽と
該高真空排気用の排気配管との接続部分に、ゲートバル
ブを設けてなることを特徴とするプラズマＣＶＤ装置。(1) A cylindrical or arc-shaped electrode is disposed in a vacuum reaction tank, a rotatable photosensitive drum holding member is disposed inside the cylindrical or arc-shaped electrode, and a wall of the vacuum reaction tank is In a plasma CVD apparatus in which an exhaust pipe for high vacuum evacuation and an exhaust pipe for gas exhaust are connected separately to a plasma CVD apparatus, a gate valve is provided at the connection part between the vacuum reaction tank and the exhaust pipe for high vacuum evacuation. A plasma CVD apparatus characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2742388A JP2653083B2 (en) | 1988-02-10 | 1988-02-10 | Plasma CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2742388A JP2653083B2 (en) | 1988-02-10 | 1988-02-10 | Plasma CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01205078A true JPH01205078A (en) | 1989-08-17 |
| JP2653083B2 JP2653083B2 (en) | 1997-09-10 |
Family
ID=12220692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2742388A Expired - Lifetime JP2653083B2 (en) | 1988-02-10 | 1988-02-10 | Plasma CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2653083B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5439524A (en) * | 1993-04-05 | 1995-08-08 | Vlsi Technology, Inc. | Plasma processing apparatus |
| WO2018098980A1 (en) * | 2016-11-30 | 2018-06-07 | 江苏菲沃泰纳米科技有限公司 | Device for forming plasma polymerized coating |
| US11332829B2 (en) | 2016-11-30 | 2022-05-17 | Jiangsu Favored Nanotechnology Co., LTD | Plasma polymerization coating with uniformity control |
| US11339477B2 (en) | 2016-11-30 | 2022-05-24 | Jiangsu Favored Nanotechnology Co., LTD | Plasma polymerization coating apparatus and process |
-
1988
- 1988-02-10 JP JP2742388A patent/JP2653083B2/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5439524A (en) * | 1993-04-05 | 1995-08-08 | Vlsi Technology, Inc. | Plasma processing apparatus |
| US5503881A (en) * | 1993-04-05 | 1996-04-02 | Vlsi Technology, Inc. | Method of processing a semiconductor wafer |
| WO2018098980A1 (en) * | 2016-11-30 | 2018-06-07 | 江苏菲沃泰纳米科技有限公司 | Device for forming plasma polymerized coating |
| US10424465B2 (en) | 2016-11-30 | 2019-09-24 | Jiangsu Favored Nanotechnology Co., LTD | Plasma polymerization coating apparatus |
| US11332829B2 (en) | 2016-11-30 | 2022-05-17 | Jiangsu Favored Nanotechnology Co., LTD | Plasma polymerization coating with uniformity control |
| US11339477B2 (en) | 2016-11-30 | 2022-05-24 | Jiangsu Favored Nanotechnology Co., LTD | Plasma polymerization coating apparatus and process |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2653083B2 (en) | 1997-09-10 |
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