JPS5970761A - Film forming device - Google Patents
Film forming deviceInfo
- Publication number
- JPS5970761A JPS5970761A JP18347782A JP18347782A JPS5970761A JP S5970761 A JPS5970761 A JP S5970761A JP 18347782 A JP18347782 A JP 18347782A JP 18347782 A JP18347782 A JP 18347782A JP S5970761 A JPS5970761 A JP S5970761A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- raw material
- reaction
- film
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、ガスを原料とし、放電反応によって膜支持体
上に膜を形成する膜形成装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a film forming apparatus that uses gas as a raw material and forms a film on a membrane support by a discharge reaction.
膜形成装置は、加熱可能な膜支持体を内蔵し、排気系に
設けたポンプによって減圧にし得る反応容器内に原料ガ
スを流通させ、そこで放電反応を生起することによって
前記膜支持体上に膜形成を行ない、その後前記反応容器
を流通した原料ガスを排気系に尋いて排出する装置であ
る。The film forming apparatus has a built-in heatable membrane support, flows raw material gas into a reaction vessel that can be reduced in pressure by a pump installed in an exhaust system, and forms a film on the membrane support by causing a discharge reaction there. This device performs formation and then discharges the raw material gas that has passed through the reaction vessel through an exhaust system.
しかしながらこの種の膜形成製ａｒｔにあっては、前記
反応容器内での放電反応の副生成物として不要な粉体を
生ずる場合が多い。このため、従来装置では不要な粉体
が排気系の排気管 、Ｉｐタンプフィルタ、種々の弁に
堆積し、排気能力すなわち反応容器内の減圧能力が低下
して成膜を困難にするという問題があった。また同様の
理由により、頻繁に排気系の清掃をしなければならなく
なシ、長時間の連続成膜が不可能になるという問題があ
った。However, in this type of film forming art, unnecessary powder is often produced as a by-product of the discharge reaction within the reaction vessel. For this reason, with conventional equipment, unnecessary powder accumulates in the exhaust pipe of the exhaust system, the Ip tamp filter, and various valves, reducing the exhaust capacity, that is, the ability to reduce the pressure inside the reaction vessel, and making film formation difficult. there were. Further, for the same reason, there is a problem in that the exhaust system must be cleaned frequently, making continuous film formation for a long time impossible.
本発明は上記事情に鑑みてなされたものであり、成膜の
際に放電反応の副生成物として不要な粉体を生じても、
成膜中に排気能力が低下することを防止することができ
、しかも長時間の連続成膜を可能にすることのできる膜
形成装置を提供することを目的とするものである。The present invention has been made in view of the above circumstances, and even if unnecessary powder is produced as a by-product of the discharge reaction during film formation,
It is an object of the present invention to provide a film forming apparatus that can prevent deterioration of exhaust capacity during film formation and also enable continuous film formation over a long period of time.
本発明は上記目的を達成するために、反応容器内での放
電反応にょ多副生成物として生じた不要な粉体を捕獲す
る粉体捕獲手段を原料ガスの排気系に設けたものである
。In order to achieve the above-mentioned object, the present invention is provided with a powder trapping means in a raw material gas exhaust system for trapping unnecessary powder produced as a by-product of a discharge reaction in a reaction vessel.
以下本発明を１図面を参照しながら説明する。 The present invention will be explained below with reference to one drawing.
第１図は本発明の一実施例装説を示す概略断面図である
。図において１で示すものは加熱可能な膜支持体２を内
蔵した減圧にし得る反応容器である。この反応容器１は
、円筒状の容器１人に上蓋１Ｂと下蓋１０とが取付けら
れ、そのほぼ中央には前記膜支持体２例えばヒータ２Ａ
＝５１−内蔵しだ円筒形のアルミ製支持体２Ｂが回転自
在に配置され、さらにその外方には放電′１１１．極６
が設けられて構成されている。この放ｒ、（１電極３は
、前記円筒状の容器１人の上下瑞部に取付けられている
Ｏリング付きテフロンリング４を介し容器１人内部に設
けられていて、接地されている前記容器ＩＡ、上蓋ＩＢ
。FIG. 1 is a schematic sectional view showing an embodiment of the present invention. In the figure, the reference numeral 1 denotes a reaction vessel containing a heatable membrane support 2 and capable of being reduced in pressure. This reaction container 1 has an upper lid 1B and a lower lid 10 attached to one cylindrical container, and the membrane support 2, for example, a heater 2A, is installed approximately in the center of the reaction container 1.
=51-A built-in cylindrical aluminum support 2B is rotatably arranged, and a discharge '111. pole 6
It is set up and configured. This electrode 3 is provided inside the container via a Teflon ring 4 with an O-ring attached to the top and bottom of the cylindrical container, and the container is grounded. IA, upper lid IB
.
下蓋１Ｃとは電気的に絶縁されている。なお前記放電電
極６と容器１人の内面との間には原料ガス導入部空間５
が形成され、かつ前記放電電極６には多数の孔から成る
原ネ・１ガス流出口３Ａが形成されている。そして前記
原料ガス導入部空間５には、流量制御装置６を介して原
料ガスゼンペ７から導かれたＪＪｌｔ料ガスが供給され
るようになっている。It is electrically insulated from the lower lid 1C. Note that there is a raw material gas introduction space 5 between the discharge electrode 6 and the inner surface of one container.
is formed, and the discharge electrode 6 is formed with a raw gas outlet 3A consisting of a large number of holes. The raw material gas inlet space 5 is supplied with the JJlt raw material gas guided from the raw material gas 7 through the flow rate control device 6.
特に、原料ガスは前記原料ガス導入部空間５に供給され
、その後原料ガス流出口６Ａから反応容器１中に導入さ
れるので、原料ガスの流束の均一性を保つことができる
。また「１「記放電電極３と前記アルミ製支持体２Ｂ表
面との間に放電例えばグロー放電を生起させるだめに、
マッチングヂツクス１０と高周波電源１１とが設けられ
ている。そして前記反応容器１を流通した原料ガスを反
応容器１内から排出する排出口１２が前記下蓋１Ｂに形
成されており、この排出Ｉコ１２には原料ガスの排気系
１６が接続されている、この排気系１６は、前記排出口
１２に一端部が接続され、かつ他端部にロータリー月？
ンゾ１４が取付けられた排気管１５と、この排気管１５
の中間部に順次（前記排出口１２に近い順）取付けた粉
体捕獲手段例えば粉体４１（Ｉ獲器１６．圧力調整用ス
ロットルバルブ１７゜バルブ１８．メカニカルブースタ
ーポンプ１９とによって構成されている。前記粉体捕獲
器１６は、前記反応容器１内での放電反応によシ副生成
物として生じた不要な粉体を捕獲するものであシ、例え
ば円筒状容器１６Ａ中に円筒状金属メツシュ１６Ｂが配
置され、側方から上方へ排気できる構成になっている６
時にこの上うな構成にすれば粉体捕獲器１６によって捕
獲した粉体を排気系の下流にもれにくくすることができ
る。なお前記粉体捕獲器１６中に捕獲された粉体は、蓋
１６０を開けることによって定期的に除去することが可
能である。In particular, since the raw material gas is supplied to the raw material gas inlet space 5 and then introduced into the reaction vessel 1 from the raw gas outlet 6A, the uniformity of the flux of the raw material gas can be maintained. In addition, "1" In order to cause a discharge, for example, a glow discharge, between the recording discharge electrode 3 and the surface of the aluminum support 2B,
A matching device 10 and a high frequency power source 11 are provided. A discharge port 12 for discharging the raw material gas flowing through the reaction vessel 1 from inside the reaction vessel 1 is formed in the lower lid 1B, and a raw material gas exhaust system 16 is connected to this discharge port 12. , this exhaust system 16 has one end connected to the exhaust port 12, and the other end connected to a rotary moon?
Exhaust pipe 15 to which engine 14 is attached, and this exhaust pipe 15
For example, powder capturing means 41 (I capture device 16, pressure adjustment throttle valve 17° valve 18, and mechanical booster pump 19) are installed in the intermediate portion of the device in order (in the order closest to the discharge port 12). The powder trap 16 is for capturing unnecessary powder produced as a by-product by the discharge reaction in the reaction container 1. For example, a cylindrical metal mesh is placed in the cylindrical container 16A. 16B is arranged so that exhaust can be exhausted from the side to the top 6
In addition, with such a configuration, it is possible to prevent the powder captured by the powder trap 16 from leaking into the downstream of the exhaust system. Note that the powder trapped in the powder trap 16 can be periodically removed by opening the lid 160.
また前記ロータリーポンプ１４とメカニカルブースター
ポンプ１９とは、原料ガスや不要な粉体を前記反応容器
１内から排気するだめのものであるが、同時に前記反応
容器１内を減圧するためのものである。したがって、そ
れらによって排気を行なうとともに、前記圧力調整用ス
ロットルバルブ１７を操作する仁とによって反応容器１
内は所定圧力に減圧されることになる。なお図において
２０で示すものは）々ルブであシ、２１で示すものは反
応容器リーク弁であり、２２で示すものは排気系リーク
弁である。Further, the rotary pump 14 and the mechanical booster pump 19 are used to exhaust raw material gas and unnecessary powder from the reaction vessel 1, but at the same time they are used to reduce the pressure inside the reaction vessel 1. . Therefore, the reaction vessel is evacuated by the pressure adjusting throttle valve 17.
The inside will be reduced to a predetermined pressure. In the figure, the reference numeral 20 is a valve, the reference numeral 21 is a reaction vessel leak valve, and the reference numeral 22 is an exhaust system leak valve.
次に上記実施例装置の作用について説明する。Next, the operation of the apparatus of the above embodiment will be explained.
前記流量制御装置６を介して原料ガスゼンペ７から原料
ガスを反応容器１内に導入するとともに、前記ロータリ
ーポンプ１４とメカニカルブースターポンプ１９とによ
って排気を行ない、かつ前記圧力調整用スロットルバル
ブ１７を操作して反応容器１内・を所望の定常圧力に減
圧する。そして前記ヒータ２Ａを介して前記アルミ製支
持体２Ｂを加熱し、かつ前記マッチングゼックス１０と
高周波電源１１とを介して前記アルミ製支持体２Ｂの表
面と放電電極６との間にグロー放電を生起させると、前
記アルミ製支持体２Ｂの表面に膜が形成される。そして
、原料ガスは、前記放電反応による成膜が行なわれた後
、前記メカニカルブースターポンプ１９及びロータリー
ポンプ１４によって原料ガス排出口１２から排気される
が、前記放電反応の副生成物として不要の粉体が生じた
場合には、この粉体は前記粉体捕獲器１６にて捕獲され
ることになる。したがって、この不要な粉体は、前記圧
力調整用スロットルバルブ１７．ノ々ルプ１８゜メカニ
カルブースターポンプ１９及びロータリーポンプ１４の
メツシュトラップ上に堆積したシ、前記排気管１５の内
壁に堆積したシすることはない。このため、粉体捕獲器
１６に捕獲された不要な粉体を定期的に除去してやれば
、成膜中に排気系１５の排気能力が低下して（すなわち
反応容器内の減圧能力が低下して）成膜が困難になると
いうことはなく、しかも長時間の連続成膜が可能になる
。The raw material gas is introduced into the reaction vessel 1 from the raw material gas Zenpe 7 via the flow rate control device 6, and is evacuated by the rotary pump 14 and mechanical booster pump 19, and the pressure regulating throttle valve 17 is operated. The pressure inside the reaction vessel 1 is reduced to a desired steady pressure. Then, the aluminum support 2B is heated via the heater 2A, and glow discharge is generated between the surface of the aluminum support 2B and the discharge electrode 6 via the matching ZEX 10 and the high frequency power source 11. As a result, a film is formed on the surface of the aluminum support 2B. After the film is formed by the discharge reaction, the raw material gas is exhausted from the raw material gas outlet 12 by the mechanical booster pump 19 and the rotary pump 14, but unnecessary powder is removed as a by-product of the discharge reaction. If powder is generated, this powder will be captured by the powder trap 16. Therefore, this unnecessary powder is removed from the pressure regulating throttle valve 17. There will be no deposits on the mesh traps of the nozzle 18° mechanical booster pump 19 and rotary pump 14, and there will be no deposits on the inner wall of the exhaust pipe 15. Therefore, if the unnecessary powder captured by the powder trap 16 is periodically removed, the exhaust capacity of the exhaust system 15 will decrease during film formation (i.e., the depressurization capacity in the reaction vessel will decrease). ) Film formation does not become difficult, and continuous film formation for a long period of time becomes possible.
欠如本発明の他の実施例装置を第２図に基づいて説明す
る。第１図と同一の部材には同符号を付してその詳細な
説明を省略する。第１図に示すものと異なる構成は、前
記粉体捕獲器１６を２個並列に配置し、かつ各々の粉体
捕獲器１６を隔離バルブ２４．２５によって隔離可能に
して排気系１６を構成したことである。特にこのよう建
構成すれば、一方の粉体捕獲器１６に原料ガスを流して
いる間に、他方の粉体捕獲器１６を洗浄することが可能
であり、この結果粉体捕獲器からの粉体除去時間の装置
体ＩＥ損失をなくすことができ、よシ長時間の連続成膜
が可能になる。Another embodiment of the present invention will now be described with reference to FIG. The same members as in FIG. 1 are given the same reference numerals and detailed explanation thereof will be omitted. In a configuration different from that shown in FIG. 1, the exhaust system 16 is constructed by arranging two powder traps 16 in parallel and making it possible to isolate each powder trap 16 by isolation valves 24 and 25. That's true. In particular, with this construction, it is possible to wash the other powder trap 16 while flowing the raw material gas into one powder trap 16, and as a result, the powder from the powder trap 16 can be cleaned. It is possible to eliminate the IE loss of the apparatus body during body removal time, and continuous film formation for a longer period of time becomes possible.
ここで上記実ｈＮ ｆ９１装置と従来装置との連続成膜
時間の比軸実験結果について説明する。例えば、電子写
真用感光体に使用するだめに、モノシランのグロー放電
分解により前記アルミ’ｌＵ支持体２Ｂの表面に非晶質
シリコン膜を形成した１箱合について説明する。Here, the results of a ratio axis experiment of continuous film formation time between the actual hN f91 apparatus and the conventional apparatus will be explained. For example, a case in which an amorphous silicon film is formed on the surface of the aluminum support 2B by glow discharge decomposition of monosilane for use in an electrophotographic photoreceptor will be described.
先ず、従来装置（第１図及び第２図に示す装置から粉体
捕獲器１６を除去しだ（１ｑ成の装置ｆｆ、 ）によっ
て、以下の条件でアルミ製支持体２Ｂ表面にａ−８ｉ膜
の形成を行なった。First, an a-8i film was applied to the surface of the aluminum support 2B under the following conditions using a conventional device (the device shown in FIGS. 1 and 2, with the powder trap 16 removed (1Q device ff)). was formed.
アルミ製支持体温度 ２２０℃
Ｓ ｉ Ｈ４流ｊＨ，’ ２００ ＣＣ／ＭＭ
反応圧力 ［１４，１ｏｒｒ
高周波社力 １００ｗ
成膜速度 ４μｍ／ｈ ｒ
コノトキには、排気系特にメカニカルブースターポンプ
上のフィルターに粉体（この場合には、アルミ製支持体
上の副反応として、気相中のプラズマ重合のｔ青果生成
される（ＳｉＨ２）ｎ）が堆積し、排気能力が急速に低
下して反応圧力（反応容器内の減圧圧力）Ｏ−４ｔｏｒ
ｒを維持できたのは３時間に過ぎなかった。Aluminum support temperature 220℃ S i H4 flow jH,' 200 CC/MM
Reaction pressure [14.1orr Koshuha Shariki 100w Film forming rate 4μm/hr Konotoki is equipped with powder (in this case, gas as a side reaction on the aluminum support) in the exhaust system, especially the filter on the mechanical booster pump. (SiH2)n) produced by plasma polymerization in the phase is deposited, and the exhaust capacity rapidly decreases, reducing the reaction pressure (vacuum pressure inside the reaction vessel) to O-4torr.
I was able to maintain r for only 3 hours.
これに対し１本実施例装置を使用して上記と同様の条件
でａ−８ｉ膜を形成した場合には、従来装置とは比較に
ならない程の長時間成膜が可能であった。On the other hand, when the a-8i film was formed using the apparatus of this embodiment under the same conditions as above, it was possible to form the film for a longer time than with the conventional apparatus.
なお上記実施例は一例であシ、本発明の要旨の範囲内で
種々の変形実施が可能である。例えば排気系に粉体捕獲
器１６を並列配置する場合には２個に限定されるもので
はなく、それ以上の個数を並列配置することも可能であ
る。また粉体捕獲器１６を直列に接続することも可能で
あシ、直列に接続した複数組のものを並列配置すること
も可能である。さらに粉体捕獲器自体の構造も実施例で
説明した横１に限定されるものではなく、粉体の性質や
排気系の構造などに応じて適宜構造とすることが可能で
ある。Note that the above-mentioned embodiment is merely an example, and various modifications can be made within the scope of the gist of the present invention. For example, when the powder traps 16 are arranged in parallel in the exhaust system, the number is not limited to two, and it is also possible to arrange more than two in parallel. It is also possible to connect the powder traps 16 in series, and it is also possible to arrange a plurality of sets connected in series in parallel. Furthermore, the structure of the powder trap itself is not limited to the horizontal one described in the embodiment, but can be appropriately structured depending on the properties of the powder, the structure of the exhaust system, etc.
以上の説明から明らかなように本発明の膜形成装置にあ
っては、成膜の際に放電反応の副生成物として不要な粉
体を生じても、成膜中に排気能力が低下して成膜が困難
になることを防止することができ、しかもし時間の連続
成膜を可能にすることができるなどの優れた効果を有す
るものである。As is clear from the above description, in the film forming apparatus of the present invention, even if unnecessary powder is produced as a byproduct of the discharge reaction during film formation, the exhaust capacity is reduced during film formation. This method has excellent effects such as being able to prevent film formation from becoming difficult and also enabling continuous film formation.
第１図は本発明の一実施例製置を示す概略断面図、第２
図は本発明の他の実施例装置を示す概略断面図である。
１・・・反応容器、２・・・膜支持体、１６・・・排気
系、１６・・・粉体捕獲手段、２４．２５・・・隔離ノ
々ルプ。Fig. 1 is a schematic sectional view showing the installation of an embodiment of the present invention;
The figure is a schematic sectional view showing another embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Reaction container, 2... Membrane support, 16... Exhaust system, 16... Powder capture means, 24.25... Isolation nozzle.
Claims (1)
させて放電反応を生起させることにより前記膜支持体上
に膜を形成し、前記反応容器に導入した原料ガ、スを排
気系に導いて排出する膜形成装置において、前記反応容
器内での放電反応により副生成、物として生じた不要な
粉体を捕獲する粉体捕獲手段を前記排気系に設けたこと
を特徴とする膜形成装置。 Ｑ）前記粉体捕獲手段は、前記排気系に複数個並列に設
けられている特許請求の範囲第１項記載の膜形成装置。 （６）前記粉体捕獲手段は、排気系に設けた隔離ノ々ル
ブによつ１隔離可能に設けられている特許請求の範囲第
２項記載の膜形成装置。[Scope of Claims] (1) A film is formed on the membrane support by introducing a raw material gas into a reaction vessel containing a membrane support to cause a discharge reaction, and the raw material introduced into the reaction vessel In a film forming apparatus that guides and discharges gas and gas to an exhaust system, the exhaust system is provided with a powder capturing means that captures unnecessary powder produced as a by-product or substance by the discharge reaction in the reaction vessel. A film forming apparatus characterized by: Q) The film forming apparatus according to claim 1, wherein a plurality of the powder capturing means are provided in parallel in the exhaust system. (6) The film forming apparatus according to claim 2, wherein the powder capturing means is provided so as to be isolated by an isolation knob provided in the exhaust system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18347782A JPS5970761A (en) | 1982-10-18 | 1982-10-18 | Film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18347782A JPS5970761A (en) | 1982-10-18 | 1982-10-18 | Film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5970761A true JPS5970761A (en) | 1984-04-21 |
Family
ID=16136481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18347782A Pending JPS5970761A (en) | 1982-10-18 | 1982-10-18 | Film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5970761A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6220874A (en) * | 1985-07-19 | 1987-01-29 | Canon Inc | Accumulated film formation device |
| JPS6220875A (en) * | 1985-07-19 | 1987-01-29 | Canon Inc | Accumulated film formation device |
| JPH0225573A (en) * | 1988-07-14 | 1990-01-29 | Tel Sagami Ltd | Treating equipment |
| JP2004358407A (en) * | 2003-06-06 | 2004-12-24 | Tokyo Electron Ltd | Trap construction of exhaust system and auxiliary trap, and method for enhancing collection efficiency of exhaust trap in exhaust system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100671A (en) * | 1981-12-11 | 1983-06-15 | Canon Inc | Plasma cvd device provided with capturing device for fine powder |
| JPS5969494A (en) * | 1982-10-14 | 1984-04-19 | Ulvac Corp | Reaction and treatment apparatus for low pressure gas or vapor |
| JPS647728U (en) * | 1987-07-01 | 1989-01-17 |
-
1982
- 1982-10-18 JP JP18347782A patent/JPS5970761A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100671A (en) * | 1981-12-11 | 1983-06-15 | Canon Inc | Plasma cvd device provided with capturing device for fine powder |
| JPS5969494A (en) * | 1982-10-14 | 1984-04-19 | Ulvac Corp | Reaction and treatment apparatus for low pressure gas or vapor |
| JPS647728U (en) * | 1987-07-01 | 1989-01-17 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6220874A (en) * | 1985-07-19 | 1987-01-29 | Canon Inc | Accumulated film formation device |
| JPS6220875A (en) * | 1985-07-19 | 1987-01-29 | Canon Inc | Accumulated film formation device |
| JPH0121872B2 (en) * | 1985-07-19 | 1989-04-24 | Canon Kk | |
| JPH049872B2 (en) * | 1985-07-19 | 1992-02-21 | ||
| JPH0225573A (en) * | 1988-07-14 | 1990-01-29 | Tel Sagami Ltd | Treating equipment |
| JP2004358407A (en) * | 2003-06-06 | 2004-12-24 | Tokyo Electron Ltd | Trap construction of exhaust system and auxiliary trap, and method for enhancing collection efficiency of exhaust trap in exhaust system |
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