JPS609878A - Device for forming film deposited by electric discharge - Google Patents
Device for forming film deposited by electric dischargeInfo
- Publication number
- JPS609878A JPS609878A JP11781283A JP11781283A JPS609878A JP S609878 A JPS609878 A JP S609878A JP 11781283 A JP11781283 A JP 11781283A JP 11781283 A JP11781283 A JP 11781283A JP S609878 A JPS609878 A JP S609878A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- deposition chamber
- film
- gas
- gaseous raw
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、排気された堆積室内で、原料ガスをグロー放
電アーク放電等の放電によシ分解又は重合して、成膜す
べき基体上に堆積膜を形成する装置に関するものである
。DETAILED DESCRIPTION OF THE INVENTION The present invention is an apparatus for forming a deposited film on a substrate to be deposited by cyolyzing or polymerizing raw material gas by electric discharge such as glow discharge arc discharge in an evacuated deposition chamber. It is related to.
このような放電による堆積膜形成装置は、例えば、光導
電膜、半導体膜、無機絶縁膜、有機樹脂膜等を、成膜す
べき基体上に形成するのに有効な（１）
もので、近来、このような分野に広く使用されている。Such a deposited film forming apparatus using discharge is effective (1) for forming, for example, a photoconductive film, a semiconductor film, an inorganic insulating film, an organic resin film, etc. on a substrate to be deposited, and has recently been developed. , is widely used in such fields.
従来の放電成膜装置は堆積室内全体に原料ガスを導入し
、グロー放電を発生して成膜を行なうように構成されて
いだが、このような堆積膜形成装置においては、反応時
に生ずる副生成物が堆積室全体に付着し、大量生産時に
は次のように問題がある。Conventional discharge film forming equipment is configured to introduce raw material gas into the entire deposition chamber and generate a glow discharge to form a film. adheres to the entire deposition chamber, causing the following problems during mass production.
（１） 副生成物による汚染（混入、付着等による）に
よって高品質の膜かで＠ない。(1) Contamination by by-products (due to contamination, adhesion, etc.) may affect the quality of the membrane.
（２）何回もくりかえし生産する時、副生成物による汚
染のソータが必要となる。(2) When repeating production many times, it is necessary to sort out contamination by by-products.
本発明の目的は、原料ガスの導入を、成膜すべき基体部
分に接する出来るだけ小さな区域に限定して、原料ガス
が堆積室全体にひろがるのを防止することによって、従
来装置における上記の問題点を解決するとともに、原料
ガスの成膜効率を著るしく向上させた堆積膜形成装置を
提供することにある。An object of the present invention is to limit the introduction of the raw material gas to as small an area as possible in contact with the substrate portion to be deposited, thereby preventing the raw material gas from spreading throughout the deposition chamber, thereby solving the problems described above in the conventional apparatus. It is an object of the present invention to provide a deposited film forming apparatus which solves the problems and significantly improves the film forming efficiency of raw material gas.
本発明による堆積膜形成装置の特徴とするところは、成
膜すべき基体の成膜すべき部分に原料ガ（２）
スを局部的に導入するとともに該原料ガスが堆積室全体
にひろがらないように上記部分の局部的排気を行なう原
料ガス導入および排気ユニットを上記の堆積室内に設け
たことにある。このような原料ガス導入および排気ユニ
ットは、必要に応じて、堆積室内に２以上設けることが
できる。The feature of the deposited film forming apparatus according to the present invention is that the raw material gas (2) is locally introduced into the part of the substrate on which the film is to be deposited, and the raw material gas does not spread throughout the deposition chamber. In this way, a raw material gas introduction and exhaust unit for locally exhausting the above portion is provided within the above deposition chamber. Two or more such raw material gas introduction and exhaust units may be provided in the deposition chamber, if necessary.
以下、図面を参照して説明する。This will be explained below with reference to the drawings.
第１図は本発明に係る堆積膜形成装置の基本的構成を示
す。図中、１は堆積室、２は堆積室を排気する主排気バ
ルブ、３は放電電極、４は該電極のシールド、５は成膜
すべき基体を固定する固定台、６は該固定台上に固定さ
れた基体、７は該基体を加熱するヒータを示す。FIG. 1 shows the basic configuration of a deposited film forming apparatus according to the present invention. In the figure, 1 is a deposition chamber, 2 is a main exhaust valve for evacuating the deposition chamber, 3 is a discharge electrode, 4 is a shield for the electrode, 5 is a fixing table for fixing the substrate to be deposited, and 6 is above the fixing table. A base body is fixed to the base body, and 7 indicates a heater that heats the base body.
本発明によれば、上記の堆積室１内に、基体６の成膜す
べき部分に原料ガスを局部的に導入するとともに該原料
ガスが堆積室全体にひろがらないように上記部分の局部
的排気を行なう原料ガス導入および排気を行うユニット
が設けられる。この原料ガス導入および排気ユニットは
、ガスカバー８と、このガスカバー８内に原料ガスを供
給するガス供給パイプ９と、このガスカバー内部の排気
を行々うガス排気バルブ１０よ構成る。上記のがスカパ
ー８の端縁と成膜基体６０面の間には１ ｍｎ程度の間
隙が設けられる。According to the present invention, the source gas is locally introduced into the deposition chamber 1 into the portion of the substrate 6 where the film is to be formed, and the source gas is locally introduced into the portion so that the source gas does not spread throughout the deposition chamber. A unit for introducing and exhausting raw material gas is provided. This source gas introduction and exhaust unit includes a gas cover 8, a gas supply pipe 9 for supplying source gas into the gas cover 8, and a gas exhaust valve 10 for exhausting the inside of the gas cover. A gap of about 1 mm is provided between the edge of the above-mentioned skyper 8 and the surface of the film-forming substrate 60.
堆積膜形成の際、基体６は固定台５上に固定された後主
排気バルブ２を開いて堆積室１が４ノ１゛気され、次い
で、基体６はヒータ７によって加熱される。次にガス排
気バルブ１０を開とし、ガスカバー８に囲まれた区域内
に、ガス供給パイプ９よシ原料ガスを導入する。放電電
極３に電圧を印加して所定時間アーク放電又はグロー放
電を行なって、基体６上に成膜をする。During the formation of a deposited film, the substrate 6 is fixed on the fixing table 5, and then the main exhaust valve 2 is opened to evacuate the deposition chamber 1 by 4 cm, and then the substrate 6 is heated by the heater 7. Next, the gas exhaust valve 10 is opened and raw material gas is introduced into the area surrounded by the gas cover 8 through the gas supply pipe 9. A voltage is applied to the discharge electrode 3 to perform arc discharge or glow discharge for a predetermined period of time to form a film on the substrate 6.
第２図は、円筒形の基体の円筒面上に堆積膜を形成する
ための堆積膜製造装置の一実施例を示すもので、円筒形
基体を垂直に保持し、これを垂直軸の周シに回転しなが
らその側方から成膜するようにしたものの上方からの図
、第３図は同実施例の横方向からの図である。第２図に
おいて第１図に示す部分に該当する部分は同じ符号によ
って指示する。この実施例においては、堆積室１は成膜
すべき基体６の形状に対応する円筒形の形状を有し、そ
の軸が垂直になるように配置される。原料ガス導入およ
び排気ユニットは堆積室１内に図示される様に配置され
、該堆積室１内にこれと同軸に配置された円筒形基体６
の所定方向から円筒形基体の円筒面上に堆積膜を形成す
る。基体６は矢印で示す方向に回転されて、その円筒面
全体に堆積膜が形成される。その堆積膜形成のプロセス
は第１図について説明したと同様である。Fig. 2 shows an embodiment of a deposited film manufacturing apparatus for forming a deposited film on the cylindrical surface of a cylindrical substrate, in which the cylindrical substrate is held vertically and the cylindrical substrate is FIG. 3 is a view from above of the device in which the film is formed from the side while rotating, and FIG. 3 is a view from the lateral direction of the same embodiment. In FIG. 2, parts corresponding to those shown in FIG. 1 are designated by the same reference numerals. In this embodiment, the deposition chamber 1 has a cylindrical shape corresponding to the shape of the substrate 6 to be deposited, and is arranged so that its axis is vertical. A raw material gas introduction and exhaust unit is arranged as shown in the deposition chamber 1, and a cylindrical base 6 is arranged coaxially with the deposition chamber 1.
A deposited film is formed on the cylindrical surface of the cylindrical substrate from a predetermined direction. The base body 6 is rotated in the direction indicated by the arrow, and a deposited film is formed on the entire cylindrical surface of the base body 6. The process of forming the deposited film is the same as that described with reference to FIG.
第２図および第３図に示す装置は、例えば円筒形の基体
の円筒面上にａ−８ｉＨ（アモルファスシリコン）の膜
を形成することによって感光ドラムを作成するのに使用
できる。なお、図示の実施例においては、ガス供給／？
イブとしてガスカバー内に２本のガス供給パイプを設け
た構造のものを示しであるが、これは膜厚および膜質の
分布を均一化するためのものであって、必らずしも２本
設ける必要はなく、２本以上設けてもよいし、或いは均
一の膜厚および膜質の分布を得られれば１本でもよい。The apparatus shown in FIGS. 2 and 3 can be used, for example, to make a photosensitive drum by forming a film of a-8iH (amorphous silicon) on the cylindrical surface of a cylindrical substrate. In the illustrated embodiment, gas supply/?
The structure shown here has two gas supply pipes installed inside the gas cover, but this is to equalize the distribution of film thickness and film quality, and it is not necessary to install two gas supply pipes. It is not necessary to provide one, and two or more may be provided, or one may be provided as long as uniform film thickness and film quality distribution can be obtained.
また、放電電極は、必らずしｔ堆積室内に（５）
配置する必要はなく、堆積室の外に配置することも可能
で、また、ガスカバーとすることも可能である。Further, the discharge electrode does not necessarily have to be placed inside the deposition chamber (5), but can be placed outside the deposition chamber, or can be provided as a gas cover.
本発明装置によれば、原料ガス導入および排気ユニット
において、（原料ガス供給量）〈（ポンプ排気量）の関
係にある限り、放電中のラジカル、イオンはほとんどガ
スカバーよｐ外に漏れることはなく、原料ガスのひろが
シはガスカバー内の非常に小さい区域内に限定される。According to the device of the present invention, in the raw material gas introduction and exhaust unit, as long as the relationship of (raw material gas supply amount) < (pump displacement amount) exists, radicals and ions during discharge will hardly leak outside the gas cover. Therefore, the distribution of feed gas is limited to a very small area within the gas cover.
そのために、その成膜効率は従来の装置に比して、５乃
至１０割というように著しく向上される。然して原料ガ
スのひろがシが防止されることによって、堆積室内に副
生成物が付着する部分も少なくすることができる。Therefore, the film forming efficiency is significantly improved by 50 to 100% compared to conventional equipment. By preventing the raw material gas from spreading out, it is possible to reduce the area in which by-products adhere to the inside of the deposition chamber.
【図面の簡単な説明】
第１図は本発明による堆積膜形成装置の基本的構成を示
す断面図、第２図は円筒形の基体を垂直に保持し、成膜
するようにした本発明の実施例を示す上方からみた断面
図、第３図は第２図に示した実施例を横方向からみた断
面図である。
（６）
１・・・堆積室、 ２・・・主排気パルプ、３・・・グ
ロー放電電極、４・・・シールド、５・・・固定台、
６・・・基体、
７・・・ヒータ、 ８・・・ガスカバー、９・・・ガス
供給パイプ、１ｏ川排気パルフ。
（７）[Brief Description of the Drawings] Fig. 1 is a sectional view showing the basic configuration of a deposited film forming apparatus according to the present invention, and Fig. 2 is a sectional view showing the basic configuration of a deposited film forming apparatus according to the present invention. FIG. 3 is a cross-sectional view of the embodiment shown in FIG. 2, viewed from the side. (6) 1...Deposition chamber, 2...Main exhaust pulp, 3...Glow discharge electrode, 4...Shield, 5...Fixing stand,
6...Base body, 7...Heater, 8...Gas cover, 9...Gas supply pipe, 1o river exhaust palf. (7)
Claims (1)
膜すべき基体上に、堆積膜を形成する装置において、上
記基体の成膜すべき部分に原料ガスを局部的に導入する
とともに該原料ガスが堆積室全体にひろがらないように
上記の部分の局部的排気を行う原料ガス導入および排気
ユニットを上記堆積室内に設けたことを特徴とする放電
による堆積膜形成装置。In an apparatus that introduces a raw material gas into an evacuated deposition chamber and forms a deposited film on a substrate on which a p film is to be formed by electric discharge, the raw material gas is locally introduced into the portion of the substrate on which a film is to be formed, and An apparatus for forming a deposited film by electric discharge, characterized in that a source gas introduction and exhaust unit for locally exhausting the above portion so that the source gas does not spread throughout the deposition chamber is provided within the deposition chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11781283A JPS609878A (en) | 1983-06-29 | 1983-06-29 | Device for forming film deposited by electric discharge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11781283A JPS609878A (en) | 1983-06-29 | 1983-06-29 | Device for forming film deposited by electric discharge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS609878A true JPS609878A (en) | 1985-01-18 |
Family
ID=14720870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11781283A Pending JPS609878A (en) | 1983-06-29 | 1983-06-29 | Device for forming film deposited by electric discharge |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS609878A (en) |
-
1983
- 1983-06-29 JP JP11781283A patent/JPS609878A/en active Pending
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