JPS62292059A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS62292059A JPS62292059A JP61136781A JP13678186A JPS62292059A JP S62292059 A JPS62292059 A JP S62292059A JP 61136781 A JP61136781 A JP 61136781A JP 13678186 A JP13678186 A JP 13678186A JP S62292059 A JPS62292059 A JP S62292059A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- state image
- image pickup
- transparent insulating
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000000126 substance Substances 0.000 claims abstract description 7
- 238000003384 imaging method Methods 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000005388 borosilicate glass Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 230000006866 deterioration Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000010453 quartz Substances 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 230000000007 visual effect Effects 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 14
- 230000001070 adhesive effect Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 241000345998 Calamus manan Species 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000012950 rattan cane Nutrition 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔産業上の利用分野〕
本発明は、固体撮像装置、特に透明絶縁基板側から光が
入射する型の固体描像素子を複数個接続して成る固体撮
像装置においての、固体撮像素子接続部近傍に存在する
光電変換素子よりの出力信号特性の改善に関する。[Detailed Description of the Invention] 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a solid-state imaging device, particularly a solid-state imaging device in which a plurality of solid-state imaging elements of a type in which light enters from a transparent insulating substrate side are connected. The present invention relates to improvement of output signal characteristics from a photoelectric conversion element located near a solid-state image sensor connecting portion in a solid-state image sensor comprising: a solid-state image sensor;
従来の固体撮像装置における固体１最像素子の透明絶縁
基板には、石英ガラス（屈折率１．４６）が用いられて
いた。これは、前記固体１最像素子に、光電変換素子及
び該光電変換素子を駆動する駆動回路を内臓した場合、
該駆動回路を形成する薄膜トランジスタの製造工程にお
いて温度が１０００℃程度の工程を行っていたため、透
明絶縁基板の熱膨張、そり等に起因する不良を防止する
ためであった。Silica glass (refractive index: 1.46) has been used for the transparent insulating substrate of the solid-state first imaging element in a conventional solid-state imaging device. This is possible when a photoelectric conversion element and a drive circuit for driving the photoelectric conversion element are built into the solid-state first image element.
This was to prevent defects caused by thermal expansion, warping, etc. of the transparent insulating substrate, since the manufacturing process for the thin film transistor forming the drive circuit was performed at a temperature of about 1000°C.
従来の固体撮像装置の固体撮像素子接続部における、光
電変換素子への光の入射経路を第２図に示す、同図にお
いて、２０１及び２０２は透明絶縁基板で、屈折率１．
４６の石英が用いられている。FIG. 2 shows the incident path of light to the photoelectric conversion element at the solid-state image sensor connection part of a conventional solid-state image sensor. In the same figure, 201 and 202 are transparent insulating substrates with a refractive index of 1.
46 quartz is used.
２０３は接着剤で、透明絶縁基板２０１と２０２のすき
間にも浸透している。２０４は透明絶縁基板２０１上の
光電変換素子、２０５は透明絶縁基板２０２上の光電変
換素子である。２０６は透明絶縁基板２０２への入射光
、２０７は２０６が接着剤２０３と透明絶縁基４Ｉｉ、
２０２の境界面で反射される光、２０８は２０６が前記
境界面で屈折、透過する光、２０９は２０８が透明絶縁
基板２０２と接着剤２０３の境界面で反射する光、２１
０は２０８が前記境界面で透過する光、２１１は２１０
が接着剤２０３と透明絶縁基板２０１の境界面で反射す
る光、２１３は２１０が前記境界面で屈折、透過する光
、２１２は２１１が接着剤２０３と透明絶縁基板２０２
の境界面で屈折、透過する光で、前記境界面で反射する
光は省略しである。Reference numeral 203 denotes an adhesive which has also penetrated into the gap between the transparent insulating substrates 201 and 202. 204 is a photoelectric conversion element on the transparent insulating substrate 201, and 205 is a photoelectric conversion element on the transparent insulating substrate 202. 206 is the incident light on the transparent insulating substrate 202, 207 is the adhesive 203 and the transparent insulating base 4Ii,
208 is the light that is refracted and transmitted by the interface of 206, 209 is the light that is reflected by the interface between the transparent insulating substrate 202 and the adhesive 203, 21
0 is the light transmitted by 208 at the boundary surface, 211 is the light transmitted by 210
is the light reflected at the interface between the adhesive 203 and the transparent insulating substrate 201, 213 is the light 210 is refracted and transmitted at the interface, and 212 is the light 211 is the light between the adhesive 203 and the transparent insulating substrate 202.
The light that is refracted and transmitted at the boundary surface, and the light that is reflected at the boundary surface is omitted.
前記従来例において、接着剤２０３には屈折率１．４９
乃至１．５６の物質が用いられていた。これは、さらに
低屈折率の接着剤を用いた場合、接着強度や伸び率の問
題により熱応力で接着面に破断が起きていた為である。In the conventional example, the adhesive 203 has a refractive index of 1.49.
1.56 materials were used. This is because when an adhesive with a lower refractive index is used, the bonding surface would break due to thermal stress due to problems with adhesive strength and elongation.
透明絶縁基板２０１．２０２の屈折率は１．４６で接着
剤の屈折率と異なるため、接着剤と透明絶縁基板の境界
面で第２図に示す如き光の反射、屈折が生じる。同図に
おいて、光電変換素子２０４に入射する筈の光２０６は
、一部が固体撮像素子接続面における反射光２０９．２
１２（２１１）として光電変換素子２０５へも入射して
いる。このため、光電変換素子２０４と２０５間の分解
能（Ｍ Ｔ Ｆ ）が劣化し、映像を読み出した場合に
はぼけた線となって現われる。Since the refractive index of the transparent insulating substrates 201 and 202 is 1.46, which is different from the refractive index of the adhesive, light is reflected and refracted as shown in FIG. 2 at the interface between the adhesive and the transparent insulating substrate. In the figure, part of the light 206 that should be incident on the photoelectric conversion element 204 is reflected light 209.2 on the solid-state image sensor connection surface.
It also enters the photoelectric conversion element 205 as 12 (211). For this reason, the resolution (M TF ) between the photoelectric conversion elements 204 and 205 deteriorates, and when the image is read out, it appears as a blurred line.
そこで本発明は以上の如き問題点を解決するもので、そ
の目的とするところは、固体撮像素子接続部近傍ビット
におけるＭＴＦの劣化を改善することにある。SUMMARY OF THE INVENTION The present invention is intended to solve the above-mentioned problems, and its purpose is to improve the deterioration of the MTF in bits near the solid-state image sensor connection portion.
本発明の固体撮像装置は、固体ｔｉ像素子チップの透明
絶縁基板に、屈折率が可視光領域で１．４９以上の物質
を用いたことを特徴とする。The solid-state imaging device of the present invention is characterized in that a material having a refractive index of 1.49 or more in the visible light region is used for the transparent insulating substrate of the solid-state Ti image element chip.
第１図は本発明の実施例で、［８１は斜視図で、（ｂｌ
は長辺方向から見た断面図である。同図において１０１
は実装基板、１０２及び１０３は固体撮像素子、１０４
は接着剤、１０５乃至１０８は固体撮像素子１０２中の
光！変換素子、１０９乃至１１２は固体撮像素子１０３
中の光電変換素子、１１３は固体撮像素子ＩＱ２の透明
絶縁基板、１１４は固体撮像素子１０３の透明絶縁基板
で、透明絶縁基板１１３及び１１４には、屈折率１．４
９以上の物質が用いられる。FIG. 1 shows an embodiment of the present invention, [81 is a perspective view, (bl
is a sectional view seen from the long side direction. In the same figure, 101
is a mounting board, 102 and 103 are solid-state image sensors, 104
is the adhesive, and 105 to 108 are the light inside the solid-state image sensor 102! Conversion elements 109 to 112 are solid-state image sensors 103
The photoelectric conversion element inside, 113 is a transparent insulating substrate of the solid-state image sensor IQ2, 114 is a transparent insulating substrate of the solid-state image sensor 103, and the transparent insulating substrates 113 and 114 have a refractive index of 1.4.
9 or more substances are used.
従来の固体撮像素子においては前述の如く透明絶縁基板
には屈折率１．４６の石英が用いられていた。ところが
、駆動回路内臓型固体撮像素子の場合においても、駆動
回路を形成する薄膜トランジスタの製造工程に、最大６
００℃程度の温度で済む工程の採用が可能となった。こ
のため、固体撮像素子の透明絶縁基板にバリウムホウケ
イ酸ガラス（屈折率１．５３）等の、屈折率が１．４９
以上で、熱膨張率が石英よりも大きな物質を用いること
が可能となった。In conventional solid-state imaging devices, quartz having a refractive index of 1.46 has been used for the transparent insulating substrate as described above. However, even in the case of a solid-state image sensor with a built-in drive circuit, the manufacturing process of the thin film transistor that forms the drive circuit requires up to 6
It has become possible to adopt a process that requires a temperature of around 00°C. For this reason, the transparent insulating substrate of the solid-state image sensor is made of barium borosilicate glass (refractive index 1.53), etc., which has a refractive index of 1.49.
As described above, it has become possible to use a material with a larger coefficient of thermal expansion than quartz.
本発明固体盪像装置の固体撮像素子接続部における、光
電変換素子への光の入射経路を第３図に示す、同図にお
いて、第２図と同一の記号は第２図と同一のものを表わ
す。接着剤２０３の屈折率は、透明絶縁基板２０１及び
２０２の屈折率１．４９以上に合わせて選択できるため
、２０１．２０２．２０３間の屈折率の差がなくなり、
入射光２０６、第２図３０１，３０２．３０３に示され
る如く、反射、屈折を起こさず光電変換素子２０４に入
射する。The incident path of light to the photoelectric conversion element at the solid-state imaging device connection part of the solid-state imaging device of the present invention is shown in FIG. 3. In the same figure, the same symbols as in FIG. represent The refractive index of the adhesive 203 can be selected according to the refractive index of 1.49 or more of the transparent insulating substrates 201 and 202, so there is no difference in the refractive index between 201, 202, and 203.
The incident light 206, as shown in FIG. 2, 301, 302, and 303, enters the photoelectric conversion element 204 without being reflected or refracted.
第４図も本発明の実施例で、固体撮像素子を３個接続し
た固体撮像装置である。同図（ａｌは斜視図、同図（ｂ
ｌは長辺方向の断面図であり、第１図と同一の記号は第
１図と同一のものを表わす。４０１乃至４０３は透明絶
縁基板に屈折率１．４９以上の物質を用いた固体撮像素
子、４０４は接着剤である。FIG. 4 also shows an embodiment of the present invention, which is a solid-state imaging device in which three solid-state imaging devices are connected. The same figure (al is a perspective view, the same figure (b)
1 is a sectional view in the long side direction, and the same symbols as in FIG. 1 represent the same things as in FIG. 1. 401 to 403 are solid-state image sensing devices using a substance with a refractive index of 1.49 or more on a transparent insulating substrate, and 404 is an adhesive.
同図は固体１最像素子を３個接続した実施例であるが、
もちろん４個以上接続した固体撮像装置に本発明を用い
てもよい。The figure shows an example in which three solid-state image elements are connected.
Of course, the present invention may be applied to four or more connected solid-state imaging devices.
以上述べた如く、本発明を用いることにより固体撮像素
子接続部近傍ビー／ トにおけるＭＴＦの劣化が改善さ
れ、出力信号においてつなぎ目の目立たない固体撮像装
置が実現される。As described above, by using the present invention, the deterioration of the MTF in the beat/beat near the solid-state image sensor connecting portion is improved, and a solid-state image sensor in which the joints are not noticeable in the output signal is realized.
また、通常実装基板にはソーダガラス等の熱膨張率の大
きな物質が用いられるが、本発明により石英ガラスより
熱膨張率の大きな物質が固体撮像素子の透明絶縁基板と
して使用される事になる為、該透明絶縁基板と実装基板
との熱膨張率の差が小さくなり固体撮像素子の透明絶縁
基板と実装基板の接着面に高温時における破断が起こり
にくくなった。即ち、本発明により、固体撮像装置の温
度特性が改善されるという副次的な効果がある。Furthermore, although a material with a large coefficient of thermal expansion such as soda glass is normally used for the mounting substrate, according to the present invention, a material with a coefficient of thermal expansion larger than quartz glass can be used as the transparent insulating substrate of the solid-state image sensor. The difference in coefficient of thermal expansion between the transparent insulating substrate and the mounting substrate is reduced, making it difficult for the bonding surface between the transparent insulating substrate and the mounting substrate of the solid-state imaging device to break at high temperatures. That is, the present invention has the secondary effect of improving the temperature characteristics of the solid-state imaging device.
第１図ｆａｔは本発明の実施例における斜視図。
第１図山）は本発明の実施例における断面図。
第２図は従来の固体撮像装置における、固体撮像素子接
続部の光の入射経路を示した図。
第３図は本発明の実施例における、固体撮像素子接続部
の光の入射経路を示した図。
第４図（５）は本発明の実施例で、固体撮像素子を３個
接続した固体撮像装置の斜視図。
第４図（′ｂ）は第４図（ａｌに示す固体撮像装置の断
面図。
１０１・・・・・・・・・・・・・・・・・・実装基板
１０２．１０３・・・・・・固体撮像素子１０４・・・
・・・・・・・・・・・・・・・接着剤１０５乃至１１
２・・・光電変換素子
１１３．１１４・・・・・・屈折率１．４９以上の物質
を用いた透明絶縁基板
以 上
出願人 セイコーエプソン株式会社
代理人 弁理士 最 上 務 他１名第１図（改）
ノＩ／
第１図（ソ）
スσり〜スフ３ 虻４にと籐呑
第３図FIG. 1 is a perspective view of an embodiment of the present invention. 1) is a sectional view of an embodiment of the present invention. FIG. 2 is a diagram showing an incident path of light at a solid-state image sensor connecting portion in a conventional solid-state image sensor. FIG. 3 is a diagram showing an incident path of light at a solid-state image sensor connecting portion in an embodiment of the present invention. FIG. 4(5) is a perspective view of a solid-state imaging device according to an embodiment of the present invention, in which three solid-state imaging devices are connected. FIG. 4('b) is a sectional view of the solid-state imaging device shown in FIG. 4(al). 101......Mounting board 102, 103... ...Solid-state image sensor 104...
・・・・・・・・・・・・Adhesives 105 to 11
2...Photoelectric conversion element 113,114...Transparent insulating substrate or more using a substance with a refractive index of 1.49 or more Applicant Seiko Epson Co., Ltd. Agent Patent attorney Tsutomu Mogami and 1 other person No. 1 Figure (Revised) No I / Figure 1 (So) Su σri ~ Sufu 3 Flies 4 and rattan cup Figure 3
Claims (2)
固体撮像素子を複数個接続して成る固体撮像装置におい
て、前記透明絶縁基板に、屈折率が可視光領域で１．４
９以上の物質を用いたことを特徴とする固体撮像装置。(1) In a solid-state imaging device in which a plurality of solid-state imaging devices each having a photoelectric conversion element or the like formed on a transparent insulating substrate are connected, the transparent insulating substrate has a refractive index of 1.4 in the visible light region.
A solid-state imaging device characterized by using a substance of 9 or more.
用いたことを特徴とする、特許請求の範囲第１項記載の
固体撮像装置。(2) The solid-state imaging device according to claim 1, wherein barium borosilicate glass is used for the transparent insulating substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61136781A JPS62292059A (en) | 1986-06-12 | 1986-06-12 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61136781A JPS62292059A (en) | 1986-06-12 | 1986-06-12 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62292059A true JPS62292059A (en) | 1987-12-18 |
Family
ID=15183367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61136781A Pending JPS62292059A (en) | 1986-06-12 | 1986-06-12 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62292059A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010278240A (en) * | 2009-05-28 | 2010-12-09 | Kyocera Corp | Light emitting device and exposure device with the same, image forming apparatus, and light irradiation head |
-
1986
- 1986-06-12 JP JP61136781A patent/JPS62292059A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010278240A (en) * | 2009-05-28 | 2010-12-09 | Kyocera Corp | Light emitting device and exposure device with the same, image forming apparatus, and light irradiation head |
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