JPS5911673A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS5911673A JPS5911673A JP57120900A JP12090082A JPS5911673A JP S5911673 A JPS5911673 A JP S5911673A JP 57120900 A JP57120900 A JP 57120900A JP 12090082 A JP12090082 A JP 12090082A JP S5911673 A JPS5911673 A JP S5911673A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- filter
- semiconductor substrate
- substrate
- brought
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000011521 glass Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 238000003384 imaging method Methods 0.000 claims description 17
- 238000000926 separation method Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000013459 approach Methods 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract description 3
- 239000003086 colorant Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は固体撮像装置に関する。[Detailed description of the invention] The present invention relates to a solid-state imaging device.
現在、固体＃Ｌ像装置は小形化、軽量および高信頼性等
に優れ、撮像管からおきかわりつつある。Currently, solid-state #L imaging devices are superior in size, light weight, and high reliability, and are replacing image pickup tubes.
従来、臼黒用固体撮像装置として主に導入されたが、最
近カラー用撮像装置の実用化が試みられている。カラー
用撮像装置とし°Ｃ用いるには半導体基板上に色分離用
フィルターを設ける必要が生じる。しかしながら固体撮
像装置は撮像管と異り半導体基板上には半導体を動作さ
せる信号供給用の金属線が形成される為、前記フィルタ
ーを前記金属線の配置内に設置する必要が生じる。従っ
て、固体撮像装置においては前記フィルターの基板であ
るガラス側面に入射した光が半導体基板上の光電変換部
に到達し、偽信号が生じやすい。In the past, it was mainly introduced as a solid-state image pickup device for black color, but recently attempts have been made to put it into practical use as a color image pickup device. In order to use the color imaging device at °C, it is necessary to provide a color separation filter on the semiconductor substrate. However, unlike an image pickup tube, in a solid-state imaging device, a metal wire for supplying a signal to operate the semiconductor is formed on a semiconductor substrate, so it is necessary to install the filter within the arrangement of the metal wire. Therefore, in the solid-state imaging device, light incident on the glass side surface of the filter substrate reaches the photoelectric conversion section on the semiconductor substrate, and false signals are likely to occur.
本発明は、固体撮像装置において上記偽信号を防止する
ことを目的とする。An object of the present invention is to prevent the above-mentioned false signals in a solid-state imaging device.
本発明の特徴は、半導体基板上に撮像機能を有し、この
半導体基板に接してガラス基板上に形成した色分離用の
フィルターを設けた固体撮像装置におい′Ｃ１前記ガラ
ス基板の端部と半導体基板上の光電変換部の距離を少く
とも前記ガラス基根厚さ以上有する固体撮像装置にある
。The present invention is characterized in that a solid-state imaging device has an imaging function on a semiconductor substrate and is provided with a color separation filter formed on a glass substrate in contact with the semiconductor substrate. There is provided a solid-state imaging device in which the distance between the photoelectric conversion portion on the substrate is at least equal to or greater than the thickness of the glass base.
まずはじめに偽信号が発生する動作を第１図および第２
図を用いて説明する。First of all, the operation that generates false signals is shown in Figures 1 and 2.
This will be explained using figures.
第１図は固体撮像装置の外形を示すものでケース基板１
に接して撮像機能を有する半導体基板２に接して色分離
用フィルター３が形成され、最上部に保護ガラス層４を
有す。又半導体基板への信号供給用金属線３も併せて記
す。Figure 1 shows the outline of the solid-state imaging device.
A color separation filter 3 is formed in contact with a semiconductor substrate 2 having an imaging function and has a protective glass layer 4 on the top. A metal wire 3 for supplying signals to the semiconductor substrate is also shown.
第２図に第１図における点線領域の拡大図を示す。第２
図には半導体基板２上の光電変換領域６および色フィル
ターの色分離用染色領域７も併せて示す。今、光８がガ
ラス基板側面９に対してθの角度で入射した場合を考え
る。ガラスの屈折率ｎ、光が入射するガラス高さをＨ′
とし、前記光が半導体基板上の有効絵素領域に近づく距
離をＬ′とすると、 （ｔ） 、 （２）式の関係が成
り立つ。FIG. 2 shows an enlarged view of the dotted line area in FIG. 1. Second
The figure also shows a photoelectric conversion region 6 on the semiconductor substrate 2 and a dyed region 7 for color separation of a color filter. Now, consider the case where the light 8 is incident on the side surface 9 of the glass substrate at an angle of θ. The refractive index of the glass is n, and the height of the glass where light enters is H'
If the distance at which the light approaches the effective picture element area on the semiconductor substrate is L', then (t), the relationship of equation (2) holds true.
ｎ＝５ｉｎ（π−θ）／５ｉｎ（π−θ’ ） ・
・・（１）Ｌ’ ＝＝ Ｈ’ ｔａｎθ’
−・・−＝ （２）今、一般に固体撮像装
置で第２図に示すように側面に入ってくる入射角θの最
大角度は使用レンズ等により異るが６°位と見なせる。n=5in(π-θ)/5in(π-θ')・
...(1) L' == H'tanθ'
-...-= (2) In general, in a solid-state imaging device, as shown in FIG. 2, the maximum angle of incidence θ entering the side surface can be considered to be about 6°, although it varies depending on the lens used.
又ガラスの屈折率ｎは１．４程度である。以上の佃から
Ｌ′とＨ’の関係は（３）式となる。Further, the refractive index n of glass is about 1.4. From the above Tsukuda, the relationship between L' and H' is expressed by equation (3).
ＬｌへＨｌ ・・・・・・
（３）即ち、（３）式によると光がガラス側面９に入射
する高さの距離程度有効絵素に近づく。即ちフィル２−
の端部から有効絵素の距離りは少くともフィルターの高
さＨ以上とする必要がある。以上の余裕を取るととによ
りフィルター側面９からの光入射による偽信号を防止す
ることが可能となる。Ll to Hl...
(3) That is, according to equation (3), the light approaches the effective picture element by the distance of the height at which the light enters the glass side surface 9. That is, fill 2-
The distance from the end of the effective picture element must be at least the height H of the filter. By providing the above margin, it becomes possible to prevent false signals caused by light incident from the filter side surface 9.
即ち本発明によれば、固体撮像装置において生じやすい
ガラス側面への光入射による偽信号を防ぐことが可能と
なる。That is, according to the present invention, it is possible to prevent false signals caused by light incident on the side surface of the glass, which tend to occur in solid-state imaging devices.
第１図は固体撮像デバイスをパッケージに組み込んだ断
面図、第２図は第１図の点線領域Ａの拡大図である。
なお図において、１・・・・・・パッケージ、２・・・
・・・半導体基鈑、３・・・・・・フィルタ用ガラス基
板、４・・・・・・保護ガラス、５・・・・・・配線用
金属線、６．７・・・・・・半導体およびフィルターの
有効絵素領域、である。FIG. 1 is a sectional view of a solid-state imaging device assembled into a package, and FIG. 2 is an enlarged view of the dotted line area A in FIG. In the diagram, 1...package, 2...
... Semiconductor substrate, 3 ... Glass substrate for filter, 4 ... Protective glass, 5 ... Metal wire for wiring, 6.7 ... This is the effective pixel area of semiconductors and filters.
Claims (1)
ガラス基板上に形成した色分離用のフィルターを設けた
固体撮像装置において、前記ガラス基板の端部と半導体
基板上の光電変換部との距離を少くとも前記ガラス基板
の厚さ以上とすることを特徴とする固体撮像装置。In a solid-state imaging device that has an imaging function on a semiconductor substrate and is provided with a color separation filter formed on a glass substrate in contact with the semiconductor substrate, an end of the glass substrate and a photoelectric conversion section on the semiconductor substrate are provided. A solid-state imaging device characterized in that the distance is at least equal to or greater than the thickness of the glass substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57120900A JPS5911673A (en) | 1982-07-12 | 1982-07-12 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57120900A JPS5911673A (en) | 1982-07-12 | 1982-07-12 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5911673A true JPS5911673A (en) | 1984-01-21 |
Family
ID=14797772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57120900A Pending JPS5911673A (en) | 1982-07-12 | 1982-07-12 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5911673A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011117947A1 (en) * | 2010-03-26 | 2011-09-29 | パナソニック株式会社 | Optical semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5618479A (en) * | 1979-07-25 | 1981-02-21 | Toshiba Corp | Solid-state image pickup device |
-
1982
- 1982-07-12 JP JP57120900A patent/JPS5911673A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5618479A (en) * | 1979-07-25 | 1981-02-21 | Toshiba Corp | Solid-state image pickup device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011117947A1 (en) * | 2010-03-26 | 2011-09-29 | パナソニック株式会社 | Optical semiconductor device |
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