JPH01152255A - Manufacture of soft-magnetic material - Google Patents
Manufacture of soft-magnetic materialInfo
- Publication number
- JPH01152255A JPH01152255A JP30990287A JP30990287A JPH01152255A JP H01152255 A JPH01152255 A JP H01152255A JP 30990287 A JP30990287 A JP 30990287A JP 30990287 A JP30990287 A JP 30990287A JP H01152255 A JPH01152255 A JP H01152255A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- prescribed
- sendust
- sputtering
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000696 magnetic material Substances 0.000 title claims description 10
- 238000004544 sputter deposition Methods 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 15
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 5
- 239000000956 alloy Substances 0.000 claims abstract description 5
- 239000002131 composite material Substances 0.000 claims abstract 2
- 239000007789 gas Substances 0.000 claims description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 1
- 229910000702 sendust Inorganic materials 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 239000010408 film Substances 0.000 abstract description 3
- 150000004767 nitrides Chemical class 0.000 abstract description 3
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 2
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000005291 magnetic effect Effects 0.000 description 18
- 229910000859 α-Fe Inorganic materials 0.000 description 4
- 239000011162 core material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- -1 Nitrogen forms nitrogen ions Chemical class 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、高保磁力の磁気記録媒体に高密度に情報を記
録するのに適した磁気ヘッドのコア材料に用いられる軟
磁性材料の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing a soft magnetic material used as a core material of a magnetic head suitable for recording information at high density on a magnetic recording medium with high coercive force.
従来の技術
高密度磁気記録再生においては、記録媒体の保磁力を大
きくすれば有利であることが一般に知られているが、高
保磁力の記録媒体に情報を記録するためには強い磁場が
必要となる。ヘッドコア材として主流をなすフェライト
材はその飽和磁束密度が４０００〜５０００ガウス程度
であるため、磁気記録媒体の保磁力が１６ｏｏエルステ
・７ドを越えてくると記録が不十分になるという欠点が
ある。Conventional technology In high-density magnetic recording and reproduction, it is generally known that it is advantageous to increase the coercive force of the recording medium, but in order to record information on a recording medium with high coercive force, a strong magnetic field is required. Become. The ferrite material, which is the mainstream material for the head core, has a saturation magnetic flux density of about 4,000 to 5,000 Gauss, so it has the disadvantage that recording becomes insufficient when the coercive force of the magnetic recording medium exceeds 16 oerste.7 de. .
一方金属磁性材料で総括されるセンダスト、パーマロイ
等の結晶質磁性合金、あるいはＣｏＴａＺｒ、ＣｏＺｒ
Ｎｂ等の非晶質合金等を用いた磁気ヘッドは、一般にフ
ェライト材よりも飽和磁束密度が高く、摺動ノイズも低
いという優れた特徴を有する。この金屈磁性材料薄膜を
作製する時、主にスパッタ法が用いられている。この時
、現在のところスパッタガスとしてアルゴンガスが使用
されている（例えば第９回日本応用磁気学会学術講演会
概要！ｌ Ｐ２４２．ｒ’２２９等）。On the other hand, crystalline magnetic alloys such as sendust and permalloy, which are classified as metal magnetic materials, or CoTaZr, CoZr
Magnetic heads using amorphous alloys such as Nb generally have superior characteristics such as higher saturation magnetic flux density and lower sliding noise than ferrite materials. Sputtering is mainly used when producing this thin film of gold-tropic magnetic material. At this time, argon gas is currently used as the sputtering gas (for example, the summary of the 9th Japanese Society of Applied Magnetics Academic Conference!l P242.r'229, etc.).
しかしながらこのような方法で作製した薄膜は耐摩耗性
、加工性、高周波特性という点に欠点を有している。However, thin films produced by such methods have drawbacks in terms of wear resistance, processability, and high frequency characteristics.
発明が解決しようとする問題点
従来のセンダスト合金に関しては、その耐摩耗性に対し
て疑問が持たれており、寿命もフェライト材を用いたヘ
ッドに比べると劣るものであった。Problems to be Solved by the Invention Regarding conventional sendust alloys, there have been doubts about their wear resistance, and their lifespan has been inferior to heads using ferrite materials.
また金属磁性材料は電気抵抗率が低いために高周波領域
で渦電流損失が大きくなり、実効透磁率が小さくなると
いう欠点を有している０本発明は耐摩耗性、並びに高周
波領域において優れた軟磁気特性を示す磁性材料を作製
する方法に関してである。In addition, since metal magnetic materials have low electrical resistivity, they have the disadvantage that eddy current loss increases in the high frequency range and the effective magnetic permeability decreases. The present invention relates to a method for producing a magnetic material exhibiting magnetic properties.
問題点を解決するための手段
スパッタ法によりセンダスト薄膜を作製する際にスパッ
タガスとしてアルゴンガスと窒素ガスからなる混合ガス
を用いることにより窒化センダスト薄膜が作製できる。Means for Solving the Problems A nitride sendust thin film can be produced by using a mixed gas of argon gas and nitrogen gas as a sputtering gas when producing a sendust thin film by sputtering.
センダスト薄膜が窒素を含むことにより耐摩耗性に優れ
た、また高周波特性の良好な軟磁性薄膜となる。Since the sendust thin film contains nitrogen, it becomes a soft magnetic thin film with excellent wear resistance and good high frequency characteristics.
作用
この技術的手段の作用は次のようになる。窒素はプラズ
マ中で窒素イオン、窒素ラジカルを形成し、反応しやす
い状態になっている。−ガスバッタによりターゲットか
らたたき出された原子は、このプラズマ中を通って基板
上に堆積されるわけであるが、これらの原子のいくつか
はプラズマ中を通る際に、反応しやすい状態になってい
る窒素と結合し、基板上には窒素を含んだ軟磁性材料が
堆積される。Effect The effect of this technical means is as follows. Nitrogen forms nitrogen ions and nitrogen radicals in plasma, making it highly reactive. - The atoms that are ejected from the target by the gas batter pass through this plasma and are deposited on the substrate, but some of these atoms become reactive as they pass through the plasma. A soft magnetic material containing nitrogen is deposited on the substrate.
またこのようにして作製された窒化センダストＮ膜は、
従来のセンダストに比べて電気抵抗率が大きいため、高
周波領域に於いても渦電流損失が小さく、高周波特性の
優れた軟磁性薄膜となる。Moreover, the nitride sendust N film prepared in this way is
Since it has a higher electrical resistivity than conventional sendust, eddy current loss is small even in the high frequency range, resulting in a soft magnetic thin film with excellent high frequency characteristics.
実施例
以下本発明の一実施例について、図面を用いて説明する
。EXAMPLE An example of the present invention will be described below with reference to the drawings.
（実施例１）
第１図は、本発明に用いたスパッタ装置の模式図である
。ターゲット１はＦｅＡＡ！Ｓｉ合金ターゲット、基板
２は非磁性のセラミック材である。(Example 1) FIG. 1 is a schematic diagram of a sputtering apparatus used in the present invention. Target 1 is FeAA! The Si alloy target and the substrate 2 are nonmagnetic ceramic materials.
基板温度５０°Ｃ〜４００℃の範囲であればよい。The substrate temperature may be in the range of 50°C to 400°C.
真空室内をＩ Ｘ １０４ｔａＴｏｒｒより高真空に排
気したのち、Ｎ２ガスを０．８〜Ｚ ｍＴｏｒｒ ｆ１
人し、アルゴンガスを１０ｍＴｏｒｒになるまで導入す
る。全圧力が２０ｍＴｏｒｒになるように排気系のオリ
フィスを調整する０次にターゲットに負の高電圧（Ｄ、
Ｃ，スパッタ法）もしくは高周波電圧（Ｒ，Ｆ、スパッ
タ法）を加えて放電を起こす。After evacuating the vacuum chamber to a higher vacuum than I
Then, introduce argon gas until the pressure reaches 10 mTorr. Adjust the orifice of the exhaust system so that the total pressure is 20 mTorr. Apply a negative high voltage (D,
C, sputtering method) or high frequency voltage (R, F, sputtering method) is applied to cause discharge.
数十分間のプレスパツタの後シャンター４を開く。After pressing for several minutes, the shunter 4 is opened.
スパッタ時間を調節することにより所望の厚さのＦｅＡ
１！５ｉ−Ｎｉｉ！膜が得られる。なおスパッタ中にコ
イル３に電流を流すことにより幾らかは膜の堆積速度を
大きくすることができる。FeA of desired thickness can be obtained by adjusting sputtering time.
1!5i-Nii! A membrane is obtained. Note that the film deposition rate can be increased somewhat by passing current through the coil 3 during sputtering.
（実施例２）
第２図は、本発明に用いたスパッタ装置の模式図である
。ターゲット１０はＦｅＡβＳｉ合金であり、２枚のタ
ーゲットが対向するように置かれている（対向ターゲッ
ト式スパッタ法）、ターゲ７）１０の裏側にはマグネッ
ト１１が置かれである。マグネットの磁極は図に示すよ
うに、片側のターゲットの裏側にはＮ極が、他方にはＳ
極が配置されており、磁力線はターゲツト面に垂直にな
っている。真空室内をＩ Ｘ １０’ Ｔｏｒｒより高
真空に排気した後Ｎ２ガスを０．２〜０．８ ｍＴｏｒ
ｒ導入し、アルゴンガスを２ｍＴｏｒｒになるまで導入
する。全圧力が３ ｍＴｏｒｒになるように排気系のオ
リフィスを調整する。(Example 2) FIG. 2 is a schematic diagram of a sputtering apparatus used in the present invention. The target 10 is a FeAβSi alloy, and two targets are placed facing each other (facing target sputtering method). A magnet 11 is placed on the back side of the target 7). As shown in the figure, the magnetic poles of the magnet are N pole on the back side of the target on one side and S pole on the other side.
The poles are arranged so that the magnetic field lines are perpendicular to the target plane. After evacuating the vacuum chamber to a higher vacuum than I x 10' Torr, N2 gas was pumped to 0.2 to 0.8 mTorr.
Then, argon gas was introduced until the pressure reached 2 mTorr. Adjust the orifice of the exhaust system so that the total pressure is 3 mTorr.
以下実施例１と同様に放電を起こし、スパッタ法により
ＦｅＡｎＳｉ−Ｎ薄膜が得られる。Thereafter, a discharge is generated in the same manner as in Example 1, and a FeAnSi-N thin film is obtained by sputtering.
なお実施例１．２共に共通することであるが、尊大する
Ｎ２ガス圧力、アルゴンガス圧力は実施例ではその一例
を示したのみであり、Ｎ２ガスとアルゴンガスの混合ガ
ス中でのＮ２ガスの分圧比が０．１％以上４０％以下で
あれば、オリフィスを調整した後のスパッタガス圧力が
０．５〜４０ｍＴｏｒｒの広い範囲で耐摩耗性、高周波
特性の優れた軟磁性薄膜が得られる。Note that, although it is common to Examples 1 and 2, the exaggerated N2 gas pressure and argon gas pressure are only one example shown in the example, and the N2 gas pressure in a mixed gas of N2 gas and argon gas is If the partial pressure ratio is 0.1% or more and 40% or less, a soft magnetic thin film with excellent wear resistance and high frequency characteristics can be obtained over a wide range of sputtering gas pressure of 0.5 to 40 mTorr after adjusting the orifice.
また用いるターゲットもここではＦｅＡｊ！Ｓ ｉとな
っているがＦｅＡｊ！Ｓｉを主成分とする物であれば同
様の性質を持つＦｅＡｆＳｉ Ｎ薄膜が得られる。Also, the target used here is FeAj! Although it is S i, it is FeAj! A FeAfSiN thin film having similar properties can be obtained if Si is the main component.
発明の効果
本発明による軟磁性材料の作製方法により、例えばＶＴ
Ｒ用ヘッドのコア材としてこの材料を用いた際に、長時
間使用してもその摩耗量は少なくフェライトなみの寿命
が保証され、高飽和磁束密度、耐摩耗性に優れ、高周波
特性の優れたＦｅＡｊ！５ｉ−Ｎ薄膜が比較的容易な方
法で得られるわけである。Effects of the Invention By the method for producing a soft magnetic material according to the present invention, for example, VT
When this material is used as the core material of the R head, it has a guaranteed lifespan comparable to ferrite with little wear even after long-term use, and has high saturation magnetic flux density, excellent wear resistance, and excellent high frequency characteristics. FeAj! 5i-N thin film can be obtained by a relatively easy method.
第１図、第２図は本発明の軟磁性薄膜を製造するときに
用いるスパッタ装置の模式図である。
１・・・・・・ターゲット、２・・・・・・基板、３・
・・・・・コイル、４・・・・・・シャッター、５・・
・・・・基板ホルダー、６・・・・・・ガス導入口、７
・・・・・・排気口、８・・・・・・チャンバー。
代理人の氏名 弁理士 中尾敏男 はか１名／−−−タ
ーケヅト
２−−一基板
３−ｍ−コイか
４−−−シでヅクー
５−一一基認ホルダー
６−−−力゛ス導λロ
アー１１１＝気口
８−ｍ−＋でンバ′−
第１図FIGS. 1 and 2 are schematic diagrams of a sputtering apparatus used in manufacturing the soft magnetic thin film of the present invention. 1...Target, 2...Substrate, 3.
...Coil, 4...Shutter, 5...
...Substrate holder, 6...Gas inlet, 7
...Exhaust port, 8...Chamber. Name of agent: Patent attorney Toshio Nakao 1 person/---Tarket 2--1 board 3-M-Koika 4--Shi dezu 5-11 basic recognition holder 6--Power guide λ lower 111 = air opening 8-m-+ and member'- Figure 1
Claims (2)
ターゲットもしくは主成分がＦｅ、Ａｌ、Ｓｉ各元素よ
りなる複合ターゲットを用い、ＦｅＡｌＳｉ−Ｎ薄膜を
スパッタ法で作製する際、窒素ガスとアルゴンガスの混
合ガスをスパッタガスに用いることを特徴とする軟磁性
材料の製造方法。(1) When producing a FeAlSi-N thin film by sputtering using an alloy target whose main component is FeAlSi or a composite target whose main components are Fe, Al, and Si elements, a mixture of nitrogen gas and argon gas is used. A method for producing a soft magnetic material, characterized in that a gas is used as a sputtering gas.
上４０％以下であることを特徴とする特許請求の範囲第
（１）項記載の軟磁性材料の製造方法。(2) The method for producing a soft magnetic material according to claim (1), wherein the partial pressure ratio of nitrogen gas in the sputtering gas is 0.1% or more and 40% or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30990287A JPH01152255A (en) | 1987-12-08 | 1987-12-08 | Manufacture of soft-magnetic material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30990287A JPH01152255A (en) | 1987-12-08 | 1987-12-08 | Manufacture of soft-magnetic material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01152255A true JPH01152255A (en) | 1989-06-14 |
Family
ID=17998705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30990287A Pending JPH01152255A (en) | 1987-12-08 | 1987-12-08 | Manufacture of soft-magnetic material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01152255A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6706156B1 (en) * | 1996-09-06 | 2004-03-16 | Seagate Technology Llc | Method of making an improved MR sensor |
-
1987
- 1987-12-08 JP JP30990287A patent/JPH01152255A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6706156B1 (en) * | 1996-09-06 | 2004-03-16 | Seagate Technology Llc | Method of making an improved MR sensor |
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