JPH01120828A - Automatic cleaning device for semiconductor wafer - Google Patents
Automatic cleaning device for semiconductor waferInfo
- Publication number
- JPH01120828A JPH01120828A JP27857687A JP27857687A JPH01120828A JP H01120828 A JPH01120828 A JP H01120828A JP 27857687 A JP27857687 A JP 27857687A JP 27857687 A JP27857687 A JP 27857687A JP H01120828 A JPH01120828 A JP H01120828A
- Authority
- JP
- Japan
- Prior art keywords
- pure water
- cleaning
- chemicals
- wafer carrier
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 69
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 239000000126 substance Substances 0.000 claims abstract description 67
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000011282 treatment Methods 0.000 claims abstract description 35
- 239000007921 spray Substances 0.000 claims abstract description 21
- 235000012431 wafers Nutrition 0.000 claims description 73
- 238000001035 drying Methods 0.000 claims description 13
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 239000007789 gas Substances 0.000 abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 description 19
- 238000012993 chemical processing Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010186 staining Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000010129 solution processing Methods 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体製造に係わる半導体ウェハの洗浄工程
において用いられる半導体ウェハの自動洗浄装置に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an automatic semiconductor wafer cleaning apparatus used in a semiconductor wafer cleaning process related to semiconductor manufacturing.
（従来の技術）
従来、このような分野の技術としては、第２図〜第４図
に示すようなものがあった。以下、その構成を図を用い
て説明する。(Prior Art) Conventionally, there have been technologies in this field as shown in FIGS. 2 to 4. The configuration will be explained below using figures.
第２図は従来の半導体ウェハの自動洗浄装置の概略構成
例を示す正面図、第３図は第２図の側面図、及び第４図
は第２図の部分拡大図である。FIG. 2 is a front view showing a schematic configuration example of a conventional automatic semiconductor wafer cleaning apparatus, FIG. 3 is a side view of FIG. 2, and FIG. 4 is a partially enlarged view of FIG. 2.
第２図及び第３図において、この自動洗浄装置はローデ
ィング部１、洗浄装置部２、アンローディング部３及び
搬送装置４によって構成されている。ローディング部１
は、複数の半導体ウェハを収納したウェハキャリア５が
例えば６個我首されるローディングステージ６を有して
いる。In FIGS. 2 and 3, this automatic cleaning device is comprised of a loading section 1, a cleaning device section 2, an unloading section 3, and a conveyance device 4. Loading part 1
has a loading stage 6 on which, for example, six wafer carriers 5 containing a plurality of semiconductor wafers are loaded.
前記洗浄装置部２は、例えば薬液の入った４個の薬液処
理槽７−１〜７−４、純水の入った３個の純水洗浄槽８
−１〜８−３、及び乾燥装置９をイＪしている。薬液処
理槽７−１〜７−４は、ウェハ４ヤリア５に収納された
半導体ウェハに各種の薬液処理を施すものであり、純水
洗浄槽８−１〜８−３は、薬液処理が施された半導体ウ
ェハをつＸＩハキャリア５と共に洗浄するためのもので
ある。The cleaning device section 2 includes, for example, four chemical treatment tanks 7-1 to 7-4 containing chemical solutions, and three pure water cleaning tanks 8 containing pure water.
-1 to 8-3, and the drying device 9. The chemical treatment tanks 7-1 to 7-4 are for performing various chemical treatments on the semiconductor wafers housed in the wafer 4 carrier 5, and the pure water cleaning tanks 8-1 to 8-3 are for performing chemical treatments. This is for cleaning the semiconductor wafers together with the XI carrier 5.
また、乾燥装置９は、純水洗浄された半導体ウェハをウ
ェハキャリア５と共に乾燥するためのものである。前記
アンローディング部３は、乾燥装置９を経たウェハキャ
リア５が載置されるアンローデインダステージ１０を有
している。Further, the drying device 9 is for drying the semiconductor wafer that has been cleaned with pure water together with the wafer carrier 5. The unloading section 3 has an unloading stage 10 on which the wafer carrier 5 that has passed through the drying device 9 is placed.
前１．ｄ搬送装置４は、ウェハキャリア５をローディン
グ部１から洗浄装置部２を経てアンローディング部３ま
で運ぶためのもので、例えば搬送ロボット１１を備えて
いる。この搬送ロボット１１は、上下方向に駆動してウ
ェハキャリア５を把持するハンド部１１−１を有してい
る。Previous 1. The transport device 4 is for transporting the wafer carrier 5 from the loading section 1 to the unloading section 3 via the cleaning device section 2, and includes, for example, a transport robot 11. This transfer robot 11 has a hand section 11-1 that is driven in the vertical direction and grips the wafer carrier 5.
以上のように構成された半導体ウェハの自動洗浄装置の
動作について、第４図を用いて説明する。The operation of the automatic semiconductor wafer cleaning apparatus configured as described above will be explained using FIG. 4.
複数の半導体ウェハ１２を収納し、ローディングステー
ジ６上に載置されていたウェハキャリア５は、搬送ロボ
ット１１のハンド部１１−１により把持され、上方の所
定位置に引き上げられる。The wafer carrier 5 containing a plurality of semiconductor wafers 12 and placed on the loading stage 6 is gripped by the hand portion 11-1 of the transfer robot 11 and pulled up to a predetermined position above.
次に、搬送ロボット１１により図中矢印で示す方向に移
動したウェハキャリア５は、例えば薬液処理４１７−１
内に降ろされる。薬液処理槽７−１内で一定時間浸漬処
理されたウェハキャリア５は、′４１ｊびハンド部１１
−１によって把持され、上方に引き上げられた後に、純
水洗浄槽８−１内に降ろされる。純水洗浄槽８−１内に
おいて、ウェハキャリア５及び半導体ウェハ１２に付着
した薬液が洗浄除去される。Next, the wafer carrier 5 moved by the transfer robot 11 in the direction indicated by the arrow in the figure is transferred to, for example, a chemical treatment 417-1.
be lowered inside. The wafer carrier 5 that has been immersed in the chemical treatment tank 7-1 for a certain period of time is
-1, and after being pulled upward, is lowered into the pure water cleaning tank 8-1. In the pure water cleaning tank 8-1, the chemical solution adhering to the wafer carrier 5 and the semiconductor wafer 12 is cleaned and removed.
純水洗浄が施されたウェハキャリア５は、純水洗浄槽８
−１から引き上げられた後、必要に応じて薬液処理槽７
−２〜７−４及び純水洗浄槽８−２．８−３において処
理を受ける。その俊、ウェハキャリア５は乾燥装置９で
乾燥され、アンローディングステージ１０上に載置され
る。The wafer carrier 5 that has been cleaned with pure water is transferred to a pure water cleaning tank 8.
- After being lifted from 1, chemical treatment tank 7 is added as necessary.
-2 to 7-4 and purified water cleaning tanks 8-2, 8-3. At that moment, the wafer carrier 5 is dried in the drying device 9 and placed on the unloading stage 10.
（発明が解決しようとする問題点）
しかしながら、上記構成の半導体ウェハの自動洗浄装置
においては、半導体ウェハ１２を収納したウェハキャリ
ア５を薬液処理槽７−１〜７−４に浸漬した後、これに
付着した薬液を洗浄除去するため純水洗浄槽８−１〜８
−３に入れるために、次のような問題点があった。(Problems to be Solved by the Invention) However, in the automatic semiconductor wafer cleaning apparatus having the above configuration, after the wafer carrier 5 containing the semiconductor wafer 12 is immersed in the chemical treatment baths 7-1 to 7-4, Pure water cleaning tanks 8-1 to 8 are used to wash and remove the chemical solution adhering to the
The following problems were encountered in order to be ranked -3.
（１） 薬液処理槽７−１〜７−４から出されたウニ１
ハキヤリア５は、比較的多量の薬液が付着した状態のま
ま純水洗浄槽８−１〜Ｂ−３に投入される。それ故、純
水洗浄槽８−１〜８−３における洗浄に多くの時間を要
すると共に、薬液の混入によって純水が容易に汚染され
、洗浄効果が低下してしまう。(1) Sea urchins 1 taken out from chemical treatment tanks 7-1 to 7-4
The filters 5 are put into the pure water cleaning tanks 8-1 to B-3 with a relatively large amount of chemical solution attached to them. Therefore, cleaning in the pure water cleaning tanks 8-1 to 8-3 takes a lot of time, and the pure water is easily contaminated by mixing with chemicals, resulting in a decrease in cleaning effectiveness.
（２） 薬液処理槽７−１〜７−４から引き上げられた
ウェハキャリア５が純水洗浄槽８−１〜８−３まで移動
する間に、ウェハキャリア５や半導体ウェハ１２に付着
された薬液が滴下する。この薬液の滴下により自動洗浄
装置に汚損や腐食をイ１じてしまう。(2) While the wafer carrier 5 pulled up from the chemical treatment tanks 7-1 to 7-4 moves to the pure water cleaning tanks 8-1 to 8-3, the chemical solution attached to the wafer carrier 5 and the semiconductor wafer 12 drips. This dripping of the chemical solution will cause staining and corrosion to the automatic cleaning device.
（３） 薬液処理槽７−１〜７−４内の薬液が付？）に
より持ち出され、比較的短時間内に減少してしまうため
、その補充に手間を要すると共に、洗浄二１ストが上昇
してしまう。(3) Is there a chemical solution in the chemical solution processing tanks 7-1 to 7-4? ), and the amount decreases within a relatively short period of time, so it takes time to replenish it, and the number of cleaning strokes increases.
本発明は、前記従来技術がもっていた問題点として、純
水洗浄効率と洗浄効果が低い点、自動洗浄装置に汚損や
腐食を生じる点、及び薬液の補充に１間とコストを要す
る点について解決した半導体ウェハの自動洗浄装置を提
供するものである。The present invention solves the problems of the prior art, such as low pure water cleaning efficiency and cleaning effect, staining and corrosion of automatic cleaning equipment, and the need for time and cost to replenish chemical solutions. The present invention provides an automatic cleaning device for semiconductor wafers.
（問題点を解決するための手段）
本発明は、前記問題点を解決するために、ウェハ：１ヤ
リアに収納された複数の半導体ウェハを薬液中に浸漬し
て薬液処理を施す薬液処理槽と、前記薬液処理が施され
た前記半導体ウェハを純水中に浸漬して純水洗浄を施す
純水洗浄槽と、前記純水洗浄が施された前記半導体ウェ
ハを乾燥させる乾燥装置と、前記半導体ウェハを前記薬
液処理槽、純水洗浄槽及び乾燥装置へ搬送する搬送装置
とを備えた半導体ウェハの自動洗浄装置において、前記
薬液処理槽から引き上げられる前記ウエハキャリアの周
囲を囲むように該薬液処理槽の上部に下向きに配置され
、前記ウェハキャリア及び前記半導体ウェハに不活性ガ
スを噴射する複数のスプレーノズルを設けたものである
。(Means for Solving the Problems) In order to solve the above-mentioned problems, the present invention provides a chemical treatment tank for immersing a plurality of semiconductor wafers housed in a wafer in a chemical solution to perform chemical treatment. , a deionized water cleaning tank for immersing the semiconductor wafer subjected to the chemical treatment in deionized water and performing deionized water cleaning; a drying device for drying the semiconductor wafer subjected to the deionized water cleaning; In an automatic semiconductor wafer cleaning apparatus comprising a chemical treatment tank, a pure water cleaning tank, and a transport device for transporting wafers to a drying device, the chemical treatment is carried out so as to surround the wafer carrier pulled up from the chemical treatment tank. A plurality of spray nozzles are provided at the top of the tank so as to face downward and spray an inert gas onto the wafer carrier and the semiconductor wafer.
（作 用）
本発明（よれば、以上のように半導体ウェハの自動洗浄
装置を構成したので、薬液処理槽の上部に下向きに配置
され、不活性ガスを噴射する複数のスプレーノズルは、
前記薬液処理槽から引き上げられるウェハキャリア及び
半導体ウェハに対し不活性ガスを高速で噴出し、これら
に付着した薬液を薬液処理槽内に洗い落とす働きをする
。この働きにより、ウェハキャリア及び半導体ウェハに
付着残留する薬液量は極めて微分に抑えられる。(Function) According to the present invention, since the automatic cleaning device for semiconductor wafers is configured as described above, the plurality of spray nozzles which are arranged downwardly at the top of the chemical treatment tank and which inject inert gas are
The inert gas is ejected at high speed to the wafer carrier and semiconductor wafers being pulled up from the chemical processing tank, and serves to wash away the chemical adhering to these into the chemical processing tank. Due to this function, the amount of chemical liquid remaining on the wafer carrier and the semiconductor wafer can be suppressed to a very small amount.
したがって、前記問題点を除去することができる。Therefore, the above problem can be eliminated.
（実施例）
第１図は本発明の実施例を示１半導体ウェハの自動洗浄
装置の部分拡大図、及び第５図は第１図の平面図である
。(Embodiment) FIG. 1 shows an embodiment of the present invention, and is a partially enlarged view of an automatic semiconductor wafer cleaning apparatus, and FIG. 5 is a plan view of FIG. 1.
この自動洗浄装置の薬液処理槽２１の上部周壁には、ノ
ズル固定枠２２が設けられている。ノズル固定枠２２は
、内壁２２−１及び外壁２２−２により中空構造のダク
ト状に形成されているもので、内壁２２−１には内周に
沿って複数のスプレーノズル２３が設けられている。こ
のスプレーノズル２３は、水平に対し下方に約４５度の
角度で取付けられている。A nozzle fixing frame 22 is provided on the upper peripheral wall of the chemical treatment tank 21 of this automatic cleaning device. The nozzle fixing frame 22 is formed into a hollow duct shape by an inner wall 22-1 and an outer wall 22-2, and a plurality of spray nozzles 23 are provided along the inner periphery of the inner wall 22-1. . This spray nozzle 23 is installed downward at an angle of about 45 degrees with respect to the horizontal.
前記ノズル固定枠２２には、図示しない不活性ガスの供
給管が接続されており、この供給管には不活性ガスの供
給を制御するための制御装置が設けられている。制御装
置は搬送ロボットのハンド部２４に連動し、ハンド部２
４の動きに対応して不活性ガスをノズル固定枠２２に供
給したり、遮断できるように設定されている。An inert gas supply pipe (not shown) is connected to the nozzle fixing frame 22, and this supply pipe is provided with a control device for controlling the supply of the inert gas. The control device is linked to the hand section 24 of the transfer robot, and is connected to the hand section 24 of the transfer robot.
It is set so that inert gas can be supplied to the nozzle fixing frame 22 or cut off in response to the movement of the nozzle fixing frame 22.
前記薬液処理槽２１の隣には純水洗浄槽２５が配設され
ている。これらの薬液処理槽２１及び純水洗浄槽２５の
他にも、従来の自動洗浄装置と同様に、必要に応じて図
示しない薬液処理槽、純水洗浄槽及び乾燥装置等が設け
られている。但し、図示しない薬液処理槽にも、前記薬
液処理槽２１と同様にノズル固定枠２２及びスプレーノ
ズル２３等が設けられている。A pure water cleaning tank 25 is provided next to the chemical treatment tank 21 . In addition to the chemical treatment tank 21 and pure water cleaning tank 25, a chemical treatment tank, a pure water cleaning tank, a drying device, etc. (not shown) are provided as necessary, as in the conventional automatic cleaning device. However, the chemical liquid processing tank (not shown) is also provided with a nozzle fixing frame 22, a spray nozzle 23, etc., similarly to the chemical liquid processing tank 21.
上記のように構成された半導体ウェハの自動法）′ｆｌ
装置の動作について、第１図及び第５図を用いて説明す
る。Automatic method for semiconductor wafers configured as above)'fl
The operation of the apparatus will be explained using FIGS. 1 and 5.
複数の半導体ウェハ２６を収納し、ローディングステー
ジ２７上に載置されていたウェハキャリア２８は、搬送
ロボットのハンド部２４により把すされ、薬液処理槽２
１の上方に移動される。その復、ハンド部２４が下降し
て、ウェハキャリア２８は薬液処理槽２１の薬液２９中
に浸漬される。The wafer carrier 28 accommodating a plurality of semiconductor wafers 26 and placed on the loading stage 27 is grasped by the hand section 24 of the transfer robot and transferred to the chemical processing tank 2.
1 above. Then, the hand portion 24 is lowered, and the wafer carrier 28 is immersed in the chemical solution 29 in the chemical solution treatment tank 21 .
薬液２９は、例えばＨ２ＳＯ４と）−１２０２の溶液か
ら成り、半導体ウェハ２６表面上の汚れや酸化膜こ剥離
させるためのものである。The chemical solution 29 is made of, for example, a solution of H2SO4 and )-1202, and is used to remove dirt and oxide film on the surface of the semiconductor wafer 26.
薬液処理槽２１内で一定時間浸漬処理されたつ、−１ハ
キヤリア２８は、ハンド部２４により上方に引き上げら
れる。その際、ハンド部２４が上昇するときの信号によ
り前記制御装置が作動し、供給管Ｊ、リノズル固定枠２
２内に不活性ガス、例えば窒系ガスが放出される。ノズ
ル固定枠２２内に放出された不活性ガスは、例えば２〜
３ Ｋ’ｊ／ａｎ”程麿の圧力でスプレーノズル２３か
ら斜め下方に噴出する。この不活性ガスにより、ウェハ
キャリア２８及び半導体ウェハ２６は、その上昇につれ
上部から下部に亘って洗浄され、付着した薬液は薬液処
理槽２１内に洗い落とされる。その後、ハンド部２４が
上死点に到達したときの信号により、不活性ガスの供給
は遮断される。After being immersed in the chemical treatment tank 21 for a certain period of time, the -1 carrier 28 is pulled upward by the hand portion 24. At that time, the control device is actuated by a signal when the hand section 24 is raised, and the supply pipe J and the renozzle fixing frame 2 are
An inert gas, such as a nitrogen-based gas, is released into the chamber 2. The inert gas released into the nozzle fixing frame 22 is, for example,
The inert gas is ejected obliquely downward from the spray nozzle 23 at a pressure of about 3 K'j/an. As the wafer carrier 28 and semiconductor wafer 26 rise, they are cleaned from the top to the bottom, removing any adhesion. The chemical solution is washed away into the chemical solution processing tank 21. Thereafter, the supply of inert gas is cut off by a signal when the hand section 24 reaches the top dead center.
次に、上死点に達したハンド部２４は、図中矢印Ａの如
く純水洗浄槽２５上に移動し、再び降下してウェハキャ
リア２８を純水洗浄槽２５内に浸漬し、薬液の洗浄除去
を行なう。Next, the hand section 24 that has reached the top dead center moves above the pure water cleaning tank 25 as indicated by arrow A in the figure, descends again, and immerses the wafer carrier 28 in the pure water cleaning tank 25, and then immerses the wafer carrier 28 in the pure water cleaning tank 25. Clean and remove.
その後、必要に応じて図示しない薬液処理槽及び純水洗
浄槽において同様の動作が繰り返された後、乾燥装置に
よって水分の乾燥処理が施される。After that, similar operations are repeated in a chemical treatment tank and a pure water cleaning tank (not shown) as needed, and then a drying process is performed to remove water by a drying device.
本実施例においては次のような利点を有する。This embodiment has the following advantages.
（ｉ） ウェハキャリア２８は薬液処理槽２１から引
き出される際に、スプレーノズル２３から噴射される不
活性ガスによって洗浄を受ける。これにより、ウェハキ
ャリア２８に付着した薬液の多くは除去されるので、純
水洗浄槽２５における洗浄効率が高められ、純水洗浄処
理サイクルを従来に比べて約３０％短縮することができ
る。また、薬液による純水の汚染も最小限に抑えられる
ので、洗浄効果も向上する。(i) When the wafer carrier 28 is pulled out from the chemical treatment tank 21, it is cleaned by an inert gas sprayed from the spray nozzle 23. As a result, most of the chemical solution adhering to the wafer carrier 28 is removed, so the cleaning efficiency in the pure water cleaning tank 25 is increased, and the pure water cleaning cycle can be shortened by about 30% compared to the conventional method. In addition, contamination of pure water by chemical solutions can be minimized, resulting in improved cleaning effectiveness.
（ｉ：） ウェハキャリア２８に付着した薬液の多く
は不活性ガスにより除去されるので、移動中に滴下する
ことはない。それ故、自動洗浄装置の汚損や腐食が防止
できる。(i:) Since most of the chemical liquid adhering to the wafer carrier 28 is removed by the inert gas, it will not drip during movement. Therefore, staining and corrosion of the automatic cleaning device can be prevented.
（ｉｉｉ ） ウェハキャリア２８に付着する薬液量
はｆｌ’・かであり、しかも不活性ガスにより洗浄され
たへ！液は薬液処理槽２１内に落下する。それ故、薬液
の減少量は少なく、その補充に要する手間とコストを削
減することができる。(iii) The amount of chemical liquid adhering to the wafer carrier 28 was fl'. Moreover, it was cleaned with an inert gas! The liquid falls into the chemical treatment tank 21. Therefore, the amount of chemical solution decreases is small, and the effort and cost required for replenishing it can be reduced.
なお、本発明は図示の実施例に限定されず種々の変形が
可能であり、例えば次のような変形例が挙げられる。Note that the present invention is not limited to the illustrated embodiment and can be modified in various ways, such as the following modifications.
（ａ＞ 第１図及び第５図においては、ノズル固定枠
２２を中空のダクト状に形成し、その内壁２２−１にス
プレーノズル２３を取付けるものとしたが、これに限定
されない。例えば、単板で形成されたノズル固定枠２２
の内周に配管を取付け、この配管にスプレーノズル２３
を固定してもよい。(a> In FIGS. 1 and 5, the nozzle fixing frame 22 is formed into a hollow duct shape, and the spray nozzle 23 is attached to the inner wall 22-1 of the nozzle fixing frame 22, but the invention is not limited to this. For example, Nozzle fixing frame 22 formed of a plate
Attach a pipe to the inner circumference of the pipe, and attach the spray nozzle 23 to this pipe.
may be fixed.
この場合、不活性ガスは配管を経てスプレーノズル２３
から噴射される。In this case, the inert gas is passed through the pipe to the spray nozzle 23.
is sprayed from.
（ｂ） 第１図及び第５図ではノズル固定枠２２の内
周に沿って１列にスプレーノズル２３を配置したが、こ
れに限らず複数列に配置してもよい。(b) Although the spray nozzles 23 are arranged in one row along the inner periphery of the nozzle fixing frame 22 in FIGS. 1 and 5, the spray nozzles 23 are not limited to this and may be arranged in multiple rows.
例えば２列、即ち上下２段にスプレーノズル２３を配置
すれば、より均等な洗浄を行なうことができる。For example, if the spray nozzles 23 are arranged in two rows, that is, in upper and lower stages, more uniform cleaning can be performed.
（Ｃ） 上記実施例では、スプレーノズル２３はノズ
ル固定枠２２の内壁２２−１に取付けることとしたが、
これに限定されない。例えば第５図のように２個のウェ
ハキャリア２８が薬液処理槽２１に出し入れされる場合
、ノズル固定枠２２の中央部にこれを仕切るようにして
配管を設け、この配管の両側にもスプレーノズル２３を
設けることができる。(C) In the above embodiment, the spray nozzle 23 was attached to the inner wall 22-1 of the nozzle fixing frame 22, but
It is not limited to this. For example, when two wafer carriers 28 are taken in and out of the chemical processing tank 21 as shown in FIG. 23 can be provided.
（ｄ） スプレーノズル２３は、水平に対し下方に約
４５度の角度で取付けるのが望ましいが、３０〜６０度
の範囲内に取付ければ、洗浄効果に大きな影響はない。(d) It is desirable that the spray nozzle 23 be installed downward at an angle of about 45 degrees with respect to the horizontal, but if it is installed within the range of 30 to 60 degrees, the cleaning effect will not be significantly affected.
（ｅ） 不活性ガスの供給を制御するための制御装置
は種々の方式の採用が可能である。例えば制御装置を供
給管に設けずに、不活性ガスの供給源に設けてもよい。(e) Various types of control devices can be adopted for controlling the supply of inert gas. For example, the control device may not be provided on the supply pipe, but may be provided on the inert gas supply source.
また、ハンド部２４が上死点に達する前に不活性ガスの
供給を断つ等の供給、遮断のタイミングを変えることも
できる。Furthermore, the timing of supply and cutoff can be changed, such as cutting off the supply of inert gas before the hand portion 24 reaches the top dead center.
（発明の効果）
以十詳細（説明したように本発明によれば、薬液処理槽
の上部にウェハキャリアの周囲を囲むようにして不活性
ガス噴射用のスプレーノズルを設けたので、前記ウェハ
キャリアに付着した薬液を不活性ガスにより薬液処理槽
内に洗い落とすことができる。それ故、純水洗浄槽への
薬液の混入が微量に抑えられ、純水洗浄効率及び洗浄効
果を著しく高めることができる。また、ウェハキャリア
移動中における薬液の滴下がないので、自動洗浄装置の
汚損、腐食を防止できる。さらに、薬液処理槽における
薬液の減少を微量に抑え、その補充に要する手間やコス
トを削減できるという効果もある。(Effects of the Invention) In more detail (As explained above, according to the present invention, a spray nozzle for injecting an inert gas is provided in the upper part of the chemical processing tank so as to surround the wafer carrier, so that no adhesion to the wafer carrier is caused. It is possible to wash away the chemical solution into the chemical processing tank using an inert gas. Therefore, the mixing of the chemical solution into the pure water cleaning tank can be suppressed to a very small amount, and the pure water cleaning efficiency and cleaning effect can be significantly improved. Since there is no dripping of the chemical solution while the wafer carrier is moving, it is possible to prevent the automatic cleaning equipment from becoming contaminated or corroded.Furthermore, it has the effect of minimizing the loss of the chemical solution in the chemical processing tank, reducing the labor and cost required for replenishing it. There is also.
第１図は本発明の実施例を示す半導体ウェハの自動洗浄
装置の部分拡大図、第２図は従来の半導体つ■ハの自動
洗浄装置を示す正面図、第３図は第２図の側面図、第４
図は第２図の部分拡大図、及び第５図は第１図の平面図
である。
２１・・・・・・薬液処理槽、２３・・・・・・スプレ
ーノズル、２４・・・・・・ハンド部、２５・・・・・
・純水洗浄槽、２６・・・・・・半導体ウェハ、２８・
・・・・・ウェハキャリア。FIG. 1 is a partially enlarged view of an automatic semiconductor wafer cleaning device showing an embodiment of the present invention, FIG. 2 is a front view of a conventional semiconductor wafer automatic cleaning device, and FIG. 3 is a side view of FIG. 2. Figure, 4th
The figure is a partially enlarged view of FIG. 2, and FIG. 5 is a plan view of FIG. 1. 21... Chemical treatment tank, 23... Spray nozzle, 24... Hand part, 25...
・Pure water cleaning tank, 26... Semiconductor wafer, 28.
...Wafer carrier.
Claims (1)
液中に浸漬して薬液処理を施す薬液処理槽と、前記薬液
処理が施された前記半導体ウェハを純水中に浸漬して純
水洗浄を施す純水洗浄槽と、前記純水洗浄が施された前
記半導体ウェハを乾燥させる乾燥装置と、前記半導体ウ
ェハを前記薬液処理槽、純水洗浄槽及び乾燥装置へ搬送
する搬送装置とを備えた半導体ウェハの自動洗浄装置に
おいて、 前記薬液処理槽から引き上げられる前記ウェハキャリア
の周囲を囲むように該薬液処理槽の上部に下向きに配置
され、前記ウェハキャリア及び前記半導体ウェハに不活
性ガスを噴射する複数のスプレーノズルを設けたことを
特徴とする半導体ウェハの自動洗浄装置。[Scope of Claims] A chemical treatment tank for immersing a plurality of semiconductor wafers housed in a wafer carrier in a chemical solution to perform chemical treatment; A deionized water cleaning tank that performs deionized water cleaning, a drying device that dries the semiconductor wafer that has been subjected to deionized water cleaning, and a transport device that conveys the semiconductor wafer to the chemical treatment tank, deionized water cleaning tank, and drying device. an automatic semiconductor wafer cleaning apparatus comprising: a semiconductor wafer that is disposed facing downwardly at the top of the chemical treatment tank so as to surround the wafer carrier pulled up from the chemical treatment tank; An automatic semiconductor wafer cleaning device characterized by being equipped with a plurality of spray nozzles that spray gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27857687A JPH01120828A (en) | 1987-11-04 | 1987-11-04 | Automatic cleaning device for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27857687A JPH01120828A (en) | 1987-11-04 | 1987-11-04 | Automatic cleaning device for semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01120828A true JPH01120828A (en) | 1989-05-12 |
Family
ID=17599192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27857687A Pending JPH01120828A (en) | 1987-11-04 | 1987-11-04 | Automatic cleaning device for semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01120828A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04215879A (en) * | 1990-11-26 | 1992-08-06 | Seiko Epson Corp | Method and apparatus for washing work |
| JPH04215878A (en) * | 1990-03-14 | 1992-08-06 | Seiko Epson Corp | Submerged jet washing method and apparatus |
| JPH0596254A (en) * | 1990-05-07 | 1993-04-20 | Haneda Seisakusho:Kk | Ultrasonic washing apparatus and washing tank used therein |
| JPH0567380U (en) * | 1992-02-14 | 1993-09-07 | 株式会社北村製作所 | Cleaning equipment |
| JPH0966267A (en) * | 1995-09-01 | 1997-03-11 | Japan Field Kk | Vacuum cleaning fluid tank |
| US5730162A (en) * | 1995-01-12 | 1998-03-24 | Tokyo Electron Limited | Apparatus and method for washing substrates |
| WO1999036944A1 (en) * | 1998-01-13 | 1999-07-22 | Steag Microtech Gmbh | Method and device for drying an object |
| US6059891A (en) * | 1997-07-23 | 2000-05-09 | Tokyo Electron Limited | Apparatus and method for washing substrate |
| US6115867A (en) * | 1997-08-18 | 2000-09-12 | Tokyo Electron Limited | Apparatus for cleaning both sides of substrate |
| US6431184B1 (en) | 1997-08-05 | 2002-08-13 | Tokyo Electron Limited | Apparatus and method for washing substrate |
| KR20040032200A (en) * | 2002-10-01 | 2004-04-17 | 주식회사 에이텍 | Apparatus for washing and drying wafer and method of washing and drying wafer using that |
| US6777966B1 (en) * | 1999-07-30 | 2004-08-17 | International Test Solutions, Inc. | Cleaning system, device and method |
| CN111001625A (en) * | 2019-12-25 | 2020-04-14 | 芜湖鼎恒材料技术有限公司 | Equipment for removing oil stain on engine cylinder cover |
-
1987
- 1987-11-04 JP JP27857687A patent/JPH01120828A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04215878A (en) * | 1990-03-14 | 1992-08-06 | Seiko Epson Corp | Submerged jet washing method and apparatus |
| JPH0596254A (en) * | 1990-05-07 | 1993-04-20 | Haneda Seisakusho:Kk | Ultrasonic washing apparatus and washing tank used therein |
| JPH04215879A (en) * | 1990-11-26 | 1992-08-06 | Seiko Epson Corp | Method and apparatus for washing work |
| JPH0567380U (en) * | 1992-02-14 | 1993-09-07 | 株式会社北村製作所 | Cleaning equipment |
| US5817185A (en) * | 1995-01-12 | 1998-10-06 | Tokyo Electron Limited | Method for washing substrates |
| US5730162A (en) * | 1995-01-12 | 1998-03-24 | Tokyo Electron Limited | Apparatus and method for washing substrates |
| JPH0966267A (en) * | 1995-09-01 | 1997-03-11 | Japan Field Kk | Vacuum cleaning fluid tank |
| US6059891A (en) * | 1997-07-23 | 2000-05-09 | Tokyo Electron Limited | Apparatus and method for washing substrate |
| US6431184B1 (en) | 1997-08-05 | 2002-08-13 | Tokyo Electron Limited | Apparatus and method for washing substrate |
| US6115867A (en) * | 1997-08-18 | 2000-09-12 | Tokyo Electron Limited | Apparatus for cleaning both sides of substrate |
| US6276378B1 (en) | 1997-08-18 | 2001-08-21 | Tokyo Electron Limited | Apparatus for cleaning both sides of substrate |
| WO1999036944A1 (en) * | 1998-01-13 | 1999-07-22 | Steag Microtech Gmbh | Method and device for drying an object |
| US6777966B1 (en) * | 1999-07-30 | 2004-08-17 | International Test Solutions, Inc. | Cleaning system, device and method |
| KR20040032200A (en) * | 2002-10-01 | 2004-04-17 | 주식회사 에이텍 | Apparatus for washing and drying wafer and method of washing and drying wafer using that |
| CN111001625A (en) * | 2019-12-25 | 2020-04-14 | 芜湖鼎恒材料技术有限公司 | Equipment for removing oil stain on engine cylinder cover |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1039506B1 (en) | Apparatus for cleaning and drying substrates | |
| CN108074842B (en) | Substrate wet processing device | |
| KR100271772B1 (en) | Semiconductor Wet Etching Equipment | |
| JPH01120828A (en) | Automatic cleaning device for semiconductor wafer | |
| JPH06502514A (en) | Semiconductor processing method and device | |
| JPS63185029A (en) | Wafer treatment apparatus | |
| JP3341727B2 (en) | Wet equipment | |
| WO2014196099A1 (en) | Cleaning method and cleaning device | |
| JPH0714811A (en) | Method and device for cleaning and drying | |
| US20030136429A1 (en) | Vapor cleaning and liquid rinsing process vessel | |
| KR100637401B1 (en) | Combined cleaning bath for robot chuck, rinse bath for substrate and apparatus including the same, and method for cleaning substrate | |
| JPH04336430A (en) | Cleaning method | |
| JPH08141526A (en) | Substrate treatment apparatus and treatment tank used therein | |
| JP2001316878A (en) | Equipment, system and method for liquid treatment | |
| JP2005244130A (en) | Method and apparatus for processing substrate | |
| JPS6188531A (en) | Integrated circuit device cleaning apparatus | |
| CN114721236B (en) | Immersion type semiconductor developing device and developing method | |
| JPH02205024A (en) | Manufacture of semiconductor device | |
| JP2000133629A (en) | Substrate processor and its method | |
| JPH0536664A (en) | Wafer cleaning tank | |
| KR100321546B1 (en) | Apparatus and method for chuck cleaning of transfer robot | |
| JPH05315312A (en) | Wet etching equipment | |
| JPH088220A (en) | Thin-plate-material dipping apparatus | |
| JPS5987819A (en) | Dry etching equipment | |
| JP3583820B2 (en) | Cleaning apparatus and method of cleaning object to be cleaned |