JP7444027B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7444027B2 JP7444027B2 JP2020186056A JP2020186056A JP7444027B2 JP 7444027 B2 JP7444027 B2 JP 7444027B2 JP 2020186056 A JP2020186056 A JP 2020186056A JP 2020186056 A JP2020186056 A JP 2020186056A JP 7444027 B2 JP7444027 B2 JP 7444027B2
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- 239000004065 semiconductor Substances 0.000 title claims description 127
- 239000000758 substrate Substances 0.000 claims description 29
- 239000010410 layer Substances 0.000 description 163
- 230000003071 parasitic effect Effects 0.000 description 18
- 239000011229 interlayer Substances 0.000 description 10
- 239000013256 coordination polymer Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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Description
図1は、実施の形態1に係る半導体装置を示す断面図である。この半導体装置は、表面側がトレンチゲート構造、裏面側が平面ゲート構造の両面ゲート構造IGBTである。各構成の位置関係が分かるように図1の横方向をX方向とし、縦方向をY方向としている。
図12は、実施の形態2に係る半導体装置を示す断面図である。図13は、実施の形態2に係る半導体装置の一部をエミッタ側から見た平面図である。エミッタ電極14と表面側層間膜10は省略している。図14は、実施の形態2に係る半導体装置の一部をコレクタ側から見た平面図である。コレクタ電極15と裏面側層間膜13は省略している。なお、図12は、図13及び図14のI-I´に沿った断面図に対応する。図15は、図14のII-II´に沿ったコレクタ層周辺の断面図である。
図16は、実施の形態3に係る半導体装置の一部をコレクタ側から見た平面図である。コレクタ電極15と裏面側層間膜13は省略している。図17は、図16のI-I’に沿ったコレクタ層周辺の断面図である。本実施の形態のエミッタ側の構造は実施の形態1と同様であり、表面側ゲート電極8の長手方向はZ軸方向である。一方、裏面側ゲート電極11の長手方向は、X軸方向であり、表面側ゲート電極8の長手方向とは異なる。
Claims (6)
- 互いに対向する第1及び第2の主面を有する半導体基板と、
前記半導体基板の前記第1の主面と前記第2の主面の間に設けられた第1導電型の第1の半導体層と、
前記第1の半導体層と前記第1の主面の間に設けられた第2導電型の第2の半導体層と、
前記第2の半導体層の表面に選択的に設けられた第1導電型の複数の第3の半導体層と、
前記第1の半導体層と前記第2の主面の間に設けられた第2導電型の第4の半導体層と、
前記第4の半導体層の表面に選択的に設けられた第1導電型の複数の第5の半導体層と、
前記第1の主面の上に設けられ、前記第2及び第3の半導体層に接続された第1の主電極と、
前記第2の主面の上に設けられ、前記第4及び第5の半導体層に接続された第2の主電極と、
電気信号に応じて前記第1の半導体層と前記複数の第3の半導体層との間の導通と非導通をそれぞれ切り替える複数の第1の制御電極と
電気信号に応じて前記第1の半導体層と前記複数の第5の半導体層との間の導通と非導通をそれぞれ切り替える複数の第2の制御電極とを備え、
前記複数の第1の制御電極は平面視で第1の方向に延びるストライプ状であり、
前記複数の第2の制御電極は平面視で第2の方向に延びるストライプ状であり、
前記複数の第1の制御電極と対向する前記半導体基板の表面における前記第2の半導体層と前記複数の第3の半導体層の境界線の前記第1の方向の長さの総和を第1のゲート総幅とし、
前記複数の第2の制御電極と対向する前記半導体基板の表面における前記第4の半導体層と前記複数の第5の半導体層の境界線の前記第2の方向の長さの総和を第2のゲート総幅とし、
前記第2のゲート総幅を前記第1のゲート総幅で除して得たゲート幅比が1.0以上であり、
前記複数の第1の制御電極はトレンチゲート構造であり、
前記半導体基板の前記第1の主面側の領域は、前記複数の第1の制御電極のトレンチにより複数のメサ部に分割され、
前記複数のメサ部は、前記第1の主電極と接続された前記第3の半導体層を含むセル部と、前記第1の主電極と接続された前記第3の半導体層を含まない又は前記第3の半導体層を含まないダミーセル部とを有し、
隣接する前記セル部の間隔が、前記第2の半導体層から前記第4の半導体層までの最短距離の40分の1から20分の1であることを特徴とする半導体装置。 - 前記第2の制御電極は平面ゲート構造であることを特徴とする請求項1に記載の半導体装置。
- 前記第2の制御電極はトレンチゲート構造であることを特徴とする請求項1に記載の半導体装置。
- 前記第1の制御電極はトレンチゲート構造であり、
前記第2の方向は前記第1の方向とは異なることを特徴とする請求項1~3の何れか1項に記載の半導体装置。 - 前記第2の方向は前記第1の方向と直交することを特徴とする請求項4に記載の半導体装置。
- 前記半導体基板はワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1~5の何れか1項に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020186056A JP7444027B2 (ja) | 2020-11-06 | 2020-11-06 | 半導体装置 |
US17/315,724 US11489066B2 (en) | 2020-11-06 | 2021-05-10 | Semiconductor device |
DE102021117642.5A DE102021117642A1 (de) | 2020-11-06 | 2021-07-08 | Halbleitervorrichtung |
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