JP7372074B2 - 熱処理方法 - Google Patents
熱処理方法 Download PDFInfo
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- JP7372074B2 JP7372074B2 JP2019145205A JP2019145205A JP7372074B2 JP 7372074 B2 JP7372074 B2 JP 7372074B2 JP 2019145205 A JP2019145205 A JP 2019145205A JP 2019145205 A JP2019145205 A JP 2019145205A JP 7372074 B2 JP7372074 B2 JP 7372074B2
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- 238000010438 heat treatment Methods 0.000 title claims description 99
- 238000000034 method Methods 0.000 title claims description 19
- 230000005855 radiation Effects 0.000 claims description 93
- 239000000758 substrate Substances 0.000 claims description 56
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 238000004364 calculation method Methods 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 184
- 239000004065 semiconductor Substances 0.000 description 183
- 229910052736 halogen Inorganic materials 0.000 description 65
- 150000002367 halogens Chemical class 0.000 description 65
- 238000012546 transfer Methods 0.000 description 58
- 239000007789 gas Substances 0.000 description 41
- 230000007246 mechanism Effects 0.000 description 34
- 238000012545 processing Methods 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 235000012239 silicon dioxide Nutrition 0.000 description 17
- 239000010453 quartz Substances 0.000 description 16
- 238000009529 body temperature measurement Methods 0.000 description 12
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 229910052724 xenon Inorganic materials 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
20 下部放射温度計
25 上部放射温度計
31 温度算定部
63 上側チャンバー窓
64 下側チャンバー窓
65 熱処理空間
74 サセプタ
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (1)
- 裏面に膜が形成された基板にフラッシュ光を照射することによって該基板を加熱する熱処理方法であって、
連続点灯ランプから前記基板に光を照射することによって前記基板を予備加熱する予備加熱工程と、
予備加熱された前記基板の表面にフラッシュランプからフラッシュ光を照射することによって前記基板をフラッシュ加熱する主加熱工程と、
前記予備加熱工程および前記主加熱工程を実行するときに、前記基板の斜め下方に設けられた第1放射温度計によって前記基板の裏面の温度を継続して測定する裏面温度測定工程と、
前記主加熱工程を実行するときに、前記基板の斜め上方に設けられた第2放射温度計によってフラッシュ光照射時の前記基板の表面の上昇温度を測定する表面上昇温度測定工程と、
予備加熱されている前記基板が一定温度に到達してからフラッシュ光を照射するまでの間に前記第1放射温度計によって測定された前記基板の裏面の温度に前記第2放射温度計によって測定されたフラッシュ光照射時の前記基板の表面の上昇温度を加算して前記基板の表面温度を算定する表面温度算定と、
を備え、
前記第1放射温度計の前記基板に対する受光角が60°以上89°以下であることを特徴とする熱処理方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019145205A JP7372074B2 (ja) | 2019-08-07 | 2019-08-07 | 熱処理方法 |
TW109118398A TWI761848B (zh) | 2019-08-07 | 2020-06-02 | 熱處理方法 |
US16/901,217 US11430676B2 (en) | 2019-08-07 | 2020-06-15 | Heat treatment method of light irradiation type |
CN202010639291.4A CN112349587A (zh) | 2019-08-07 | 2020-07-06 | 热处理方法 |
KR1020200097251A KR20210018116A (ko) | 2019-08-07 | 2020-08-04 | 열처리 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019145205A JP7372074B2 (ja) | 2019-08-07 | 2019-08-07 | 熱処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021027226A JP2021027226A (ja) | 2021-02-22 |
JP7372074B2 true JP7372074B2 (ja) | 2023-10-31 |
Family
ID=74357516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2019145205A Active JP7372074B2 (ja) | 2019-08-07 | 2019-08-07 | 熱処理方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11430676B2 (ja) |
JP (1) | JP7372074B2 (ja) |
KR (1) | KR20210018116A (ja) |
CN (1) | CN112349587A (ja) |
TW (1) | TWI761848B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7372074B2 (ja) * | 2019-08-07 | 2023-10-31 | 株式会社Screenホールディングス | 熱処理方法 |
JP7370763B2 (ja) * | 2019-08-22 | 2023-10-30 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012069890A (ja) | 2010-09-27 | 2012-04-05 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
JP2012074430A (ja) | 2010-09-28 | 2012-04-12 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
JP2012238779A (ja) | 2011-05-13 | 2012-12-06 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
JP2017041468A (ja) | 2015-08-17 | 2017-02-23 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP2018157064A (ja) | 2017-03-17 | 2018-10-04 | 株式会社Screenホールディングス | 熱処理装置および放射温度計の測定位置調整方法 |
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JPS63305228A (ja) | 1987-06-06 | 1988-12-13 | Minolta Camera Co Ltd | 放射温度計 |
JPH09246200A (ja) | 1996-03-12 | 1997-09-19 | Shin Etsu Handotai Co Ltd | 熱処理方法および輻射加熱装置 |
JP4586333B2 (ja) * | 2003-05-02 | 2010-11-24 | 東京エレクトロン株式会社 | 熱処理装置、熱処理システム及び熱処理装置の温度制御方法 |
JP4043408B2 (ja) * | 2003-06-16 | 2008-02-06 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP5349819B2 (ja) * | 2008-03-25 | 2013-11-20 | 大日本スクリーン製造株式会社 | 熱処理装置 |
JP5134466B2 (ja) * | 2008-07-31 | 2013-01-30 | 株式会社神戸製鋼所 | 鋼板の温度測定装置 |
JP5507102B2 (ja) * | 2009-03-19 | 2014-05-28 | 大日本スクリーン製造株式会社 | 熱処理装置および熱処理方法 |
TWI566300B (zh) * | 2011-03-23 | 2017-01-11 | 斯克林集團公司 | 熱處理方法及熱處理裝置 |
JP5855353B2 (ja) | 2011-05-13 | 2016-02-09 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
JP6720033B2 (ja) * | 2016-09-14 | 2020-07-08 | 株式会社Screenホールディングス | 熱処理装置 |
JP6811619B2 (ja) * | 2017-01-12 | 2021-01-13 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6838992B2 (ja) * | 2017-02-21 | 2021-03-03 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
JP7265314B2 (ja) * | 2017-03-03 | 2023-04-26 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP6942615B2 (ja) * | 2017-11-20 | 2021-09-29 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP7041594B2 (ja) * | 2018-06-20 | 2022-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
JP7312020B2 (ja) * | 2019-05-30 | 2023-07-20 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP7372066B2 (ja) * | 2019-07-17 | 2023-10-31 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP7372074B2 (ja) * | 2019-08-07 | 2023-10-31 | 株式会社Screenホールディングス | 熱処理方法 |
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-
2019
- 2019-08-07 JP JP2019145205A patent/JP7372074B2/ja active Active
-
2020
- 2020-06-02 TW TW109118398A patent/TWI761848B/zh active
- 2020-06-15 US US16/901,217 patent/US11430676B2/en active Active
- 2020-07-06 CN CN202010639291.4A patent/CN112349587A/zh active Pending
- 2020-08-04 KR KR1020200097251A patent/KR20210018116A/ko not_active IP Right Cessation
Patent Citations (5)
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JP2012069890A (ja) | 2010-09-27 | 2012-04-05 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
JP2012074430A (ja) | 2010-09-28 | 2012-04-12 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
JP2012238779A (ja) | 2011-05-13 | 2012-12-06 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
JP2017041468A (ja) | 2015-08-17 | 2017-02-23 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP2018157064A (ja) | 2017-03-17 | 2018-10-04 | 株式会社Screenホールディングス | 熱処理装置および放射温度計の測定位置調整方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI761848B (zh) | 2022-04-21 |
TW202107542A (zh) | 2021-02-16 |
JP2021027226A (ja) | 2021-02-22 |
US20210043477A1 (en) | 2021-02-11 |
US11430676B2 (en) | 2022-08-30 |
KR20210018116A (ko) | 2021-02-17 |
CN112349587A (zh) | 2021-02-09 |
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