JP6942615B2 - 熱処理方法および熱処理装置 - Google Patents
熱処理方法および熱処理装置 Download PDFInfo
- Publication number
- JP6942615B2 JP6942615B2 JP2017222530A JP2017222530A JP6942615B2 JP 6942615 B2 JP6942615 B2 JP 6942615B2 JP 2017222530 A JP2017222530 A JP 2017222530A JP 2017222530 A JP2017222530 A JP 2017222530A JP 6942615 B2 JP6942615 B2 JP 6942615B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- substrate
- temperature
- heat treatment
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010438 heat treatment Methods 0.000 title claims description 122
- 238000000034 method Methods 0.000 title claims description 36
- 239000000758 substrate Substances 0.000 claims description 88
- 238000012546 transfer Methods 0.000 claims description 69
- 238000005259 measurement Methods 0.000 claims description 32
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 230000009191 jumping Effects 0.000 claims description 6
- 238000009529 body temperature measurement Methods 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 description 214
- 230000005855 radiation Effects 0.000 description 77
- 229910052736 halogen Inorganic materials 0.000 description 65
- 150000002367 halogens Chemical class 0.000 description 65
- 239000007789 gas Substances 0.000 description 42
- 230000007246 mechanism Effects 0.000 description 39
- 238000012545 processing Methods 0.000 description 25
- 239000012535 impurity Substances 0.000 description 19
- 239000010453 quartz Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 230000006399 behavior Effects 0.000 description 15
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 13
- 229910052724 xenon Inorganic materials 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 238000000137 annealing Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 4
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
20 下部放射温度計
25 上部放射温度計
31 解析部
63 上側チャンバー窓
64 下側チャンバー窓
65 熱処理空間
74 サセプタ
75 保持プレート
77 基板支持ピン
90 高速放射温度計ユニット
FL フラッシュランプ
HL ハロゲンランプ
TR 搬送ロボット
W 半導体ウェハー
Claims (6)
- 基板にフラッシュ光を照射することによって該基板を加熱する熱処理方法であって、
チャンバー内にてサセプタに支持された基板の表面にフラッシュランプからフラッシュ光を照射する照射工程と、
少なくとも前記フラッシュ光が照射された以降の前記基板の表面温度を測定して温度プロファイルを取得する温度測定工程と、
前記温度測定工程にて取得された前記温度プロファイルに基づいて前記基板の挙動を解析する解析工程と、
を備え、
前記解析工程では、前記サセプタからの前記基板の跳躍量を算定することを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記解析工程では、前記チャンバー内が基準圧であるときに測定された表面温度を基準測定温度とし、処理対象となる前記基板について測定された表面温度と前記基準測定温度との差分に基づいて前記基板の挙動を解析することを特徴とする熱処理方法。 - 請求項1または請求項2記載の熱処理方法において、
前記解析工程にて算定された前記基板の跳躍量が所定の閾値を超えた場合には前記チャンバーからの前記基板の搬送を停止することを特徴とする熱処理方法。 - 基板にフラッシュ光を照射することによって該基板を加熱する熱処理装置であって、
基板を収容するチャンバーと、
前記チャンバー内にて前記基板を載置して支持するサセプタと、
前記サセプタに支持された前記基板にフラッシュ光を照射するフラッシュランプと、
前記基板の表面温度を測定する温度測定部と、
少なくとも前記フラッシュ光が照射された以降に前記温度測定部によって測定された前記基板の表面温度から取得された温度プロファイルに基づいて前記基板の挙動を解析する解析部と、
を備え、
前記解析部は、前記サセプタからの前記基板の跳躍量を算定することを特徴とする熱処理装置。 - 請求項4記載の熱処理装置において、
前記解析部は、前記チャンバー内が基準圧であるときに測定された表面温度を基準測定温度とし、処理対象となる前記基板について測定された表面温度と前記基準測定温度との差分に基づいて前記基板の挙動を解析することを特徴とする熱処理装置。 - 請求項4または請求項5記載の熱処理装置において、
前記解析部が算定した前記基板の跳躍量が所定の閾値を超えた場合には前記チャンバーからの前記基板の搬送を停止する制御部をさらに備えることを特徴とする熱処理装置。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017222530A JP6942615B2 (ja) | 2017-11-20 | 2017-11-20 | 熱処理方法および熱処理装置 |
TW109104017A TWI727649B (zh) | 2017-11-20 | 2018-11-09 | 熱處理方法及熱處理裝置 |
TW107139821A TWI688993B (zh) | 2017-11-20 | 2018-11-09 | 熱處理方法及熱處理裝置 |
US16/188,672 US10658250B2 (en) | 2017-11-20 | 2018-11-13 | Light irradiation type heat treatment method and heat treatment apparatus |
KR1020180142506A KR102159439B1 (ko) | 2017-11-20 | 2018-11-19 | 열처리 방법 및 열처리 장치 |
CN202311100538.5A CN116913821A (zh) | 2017-11-20 | 2018-11-20 | 热处理方法及热处理装置 |
CN201811383725.8A CN109817550B (zh) | 2017-11-20 | 2018-11-20 | 热处理方法及热处理装置 |
US16/849,291 US10903126B2 (en) | 2017-11-20 | 2020-04-15 | Light irradiation type heat treatment method and heat treatment apparatus |
KR1020200118291A KR102236434B1 (ko) | 2017-11-20 | 2020-09-15 | 열처리 방법 및 열처리 장치 |
JP2021146193A JP7246443B2 (ja) | 2017-11-20 | 2021-09-08 | 熱処理方法および熱処理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017222530A JP6942615B2 (ja) | 2017-11-20 | 2017-11-20 | 熱処理方法および熱処理装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021146193A Division JP7246443B2 (ja) | 2017-11-20 | 2021-09-08 | 熱処理方法および熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019096661A JP2019096661A (ja) | 2019-06-20 |
JP6942615B2 true JP6942615B2 (ja) | 2021-09-29 |
Family
ID=66533975
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017222530A Active JP6942615B2 (ja) | 2017-11-20 | 2017-11-20 | 熱処理方法および熱処理装置 |
JP2021146193A Active JP7246443B2 (ja) | 2017-11-20 | 2021-09-08 | 熱処理方法および熱処理装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021146193A Active JP7246443B2 (ja) | 2017-11-20 | 2021-09-08 | 熱処理方法および熱処理装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US10658250B2 (ja) |
JP (2) | JP6942615B2 (ja) |
KR (2) | KR102159439B1 (ja) |
CN (2) | CN109817550B (ja) |
TW (2) | TWI688993B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10840114B1 (en) * | 2016-07-26 | 2020-11-17 | Raytheon Company | Rapid thermal anneal apparatus and method |
JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
JP6942615B2 (ja) * | 2017-11-20 | 2021-09-29 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP7312020B2 (ja) * | 2019-05-30 | 2023-07-20 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP7372066B2 (ja) * | 2019-07-17 | 2023-10-31 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP7372074B2 (ja) * | 2019-08-07 | 2023-10-31 | 株式会社Screenホールディングス | 熱処理方法 |
JP7370763B2 (ja) * | 2019-08-22 | 2023-10-30 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
TWI776371B (zh) | 2020-01-30 | 2022-09-01 | 漢辰科技股份有限公司 | 用於在具有離子佈植機和處理站的離子佈植系統中控制晶圓溫度的方法、儲存一或多個程式的非暫態電腦可讀取儲存媒體以及離子佈植系統 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6027244A (en) * | 1997-07-24 | 2000-02-22 | Steag Rtp Systems, Inc. | Apparatus for determining the temperature of a semi-transparent radiating body |
JP3278807B2 (ja) * | 1998-10-14 | 2002-04-30 | オムロン株式会社 | 制御装置、温度調節器および熱処理装置 |
JP2002368176A (ja) * | 2001-06-11 | 2002-12-20 | Rohm Co Ltd | 半導体電子部品のリードフレーム |
JP3798674B2 (ja) * | 2001-10-29 | 2006-07-19 | 大日本スクリーン製造株式会社 | 熱処理装置および熱処理方法 |
US6849831B2 (en) * | 2002-03-29 | 2005-02-01 | Mattson Technology, Inc. | Pulsed processing semiconductor heating methods using combinations of heating sources |
JP4641154B2 (ja) * | 2004-05-28 | 2011-03-02 | 大日本スクリーン製造株式会社 | 熱処理装置 |
KR200393545Y1 (ko) * | 2005-06-10 | 2005-08-22 | 드림전자(주) | 핫 플레이트 온도 제어장치 |
KR20070020752A (ko) * | 2005-08-16 | 2007-02-22 | 삼성전자주식회사 | Pid 제어되는 반도체 제조용 급속 열처리 장치 |
JP2007095889A (ja) * | 2005-09-28 | 2007-04-12 | Ushio Inc | 光照射式加熱方法 |
JP4874830B2 (ja) * | 2007-02-06 | 2012-02-15 | 株式会社東芝 | 半導体装置の製造方法 |
JP5214153B2 (ja) * | 2007-02-09 | 2013-06-19 | 大日本スクリーン製造株式会社 | 熱処理装置 |
US8057602B2 (en) * | 2007-05-09 | 2011-11-15 | Applied Materials, Inc. | Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber |
JP5346484B2 (ja) * | 2008-04-16 | 2013-11-20 | 大日本スクリーン製造株式会社 | 熱処理方法および熱処理装置 |
JP5447221B2 (ja) * | 2010-06-25 | 2014-03-19 | パナソニック株式会社 | 熱処理装置および熱処理方法 |
JP5944131B2 (ja) | 2011-09-27 | 2016-07-05 | 株式会社Screenホールディングス | 熱処理方法 |
JP5951241B2 (ja) * | 2011-12-07 | 2016-07-13 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP5977038B2 (ja) | 2012-02-15 | 2016-08-24 | 株式会社Screenホールディングス | 熱処理装置 |
JP6234674B2 (ja) * | 2012-12-13 | 2017-11-22 | 株式会社Screenホールディングス | 熱処理装置 |
JP2015088635A (ja) | 2013-10-31 | 2015-05-07 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
JP6587818B2 (ja) * | 2015-03-26 | 2019-10-09 | 株式会社Screenホールディングス | 熱処理方法 |
JP6539498B2 (ja) * | 2015-05-26 | 2019-07-03 | 株式会社Screenホールディングス | 熱処理装置 |
JP6539578B2 (ja) * | 2015-12-22 | 2019-07-03 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
WO2017116687A1 (en) | 2015-12-30 | 2017-07-06 | Mattson Technology, Inc. | Substrate breakage detection in a thermal processing system |
JP6942615B2 (ja) * | 2017-11-20 | 2021-09-29 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
-
2017
- 2017-11-20 JP JP2017222530A patent/JP6942615B2/ja active Active
-
2018
- 2018-11-09 TW TW107139821A patent/TWI688993B/zh active
- 2018-11-09 TW TW109104017A patent/TWI727649B/zh active
- 2018-11-13 US US16/188,672 patent/US10658250B2/en active Active
- 2018-11-19 KR KR1020180142506A patent/KR102159439B1/ko active IP Right Grant
- 2018-11-20 CN CN201811383725.8A patent/CN109817550B/zh active Active
- 2018-11-20 CN CN202311100538.5A patent/CN116913821A/zh active Pending
-
2020
- 2020-04-15 US US16/849,291 patent/US10903126B2/en active Active
- 2020-09-15 KR KR1020200118291A patent/KR102236434B1/ko active IP Right Grant
-
2021
- 2021-09-08 JP JP2021146193A patent/JP7246443B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US10658250B2 (en) | 2020-05-19 |
KR20200109288A (ko) | 2020-09-22 |
TWI688993B (zh) | 2020-03-21 |
US20200243402A1 (en) | 2020-07-30 |
US10903126B2 (en) | 2021-01-26 |
TWI727649B (zh) | 2021-05-11 |
KR20190058326A (ko) | 2019-05-29 |
JP2019096661A (ja) | 2019-06-20 |
JP2021185631A (ja) | 2021-12-09 |
KR102159439B1 (ko) | 2020-09-23 |
TW202025253A (zh) | 2020-07-01 |
CN109817550A (zh) | 2019-05-28 |
US20190157168A1 (en) | 2019-05-23 |
JP7246443B2 (ja) | 2023-03-27 |
KR102236434B1 (ko) | 2021-04-05 |
CN116913821A (zh) | 2023-10-20 |
TW201923848A (zh) | 2019-06-16 |
CN109817550B (zh) | 2023-08-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6942615B2 (ja) | 熱処理方法および熱処理装置 | |
US10297514B2 (en) | Thermal processing method and thermal processing apparatus through light irradiation | |
JP6824080B2 (ja) | 熱処理装置および放射温度計の測定位置調整方法 | |
JP2022081666A (ja) | 熱処理方法および熱処理装置 | |
KR102182796B1 (ko) | 열처리 장치 및 열처리 방법 | |
JP7041594B2 (ja) | 熱処理装置 | |
JP6864564B2 (ja) | 熱処理方法 | |
US11764100B2 (en) | Heat treatment susceptor and heat treatment apparatus | |
JP6960344B2 (ja) | 熱処理方法および熱処理装置 | |
JP6770915B2 (ja) | 熱処理装置 | |
JP7048351B2 (ja) | 熱処理方法および熱処理装置 | |
CN114068326A (zh) | 热处理方法 | |
JP6982446B2 (ja) | 熱処理装置 | |
WO2020188979A1 (ja) | 熱処理方法および熱処理装置 | |
JP2021136376A (ja) | 熱処理方法 | |
US20190393055A1 (en) | Heat treatment susceptor and heat treatment apparatus | |
JP6899248B2 (ja) | 熱処理装置 | |
JP7017480B2 (ja) | 熱処理方法および熱処理装置 | |
JP6987705B2 (ja) | 熱処理方法および熱処理装置 | |
JP7013337B2 (ja) | 熱処理方法および熱処理装置 | |
JP2022075942A (ja) | 熱処理方法および熱処理装置 | |
JP2021150566A (ja) | 熱処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200622 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210527 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210622 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210804 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210817 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210908 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6942615 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |