JP7257543B2 - 基板処理方法、基板処理装置及びナノワイヤ又はナノシートのトランジスタの製造方法 - Google Patents
基板処理方法、基板処理装置及びナノワイヤ又はナノシートのトランジスタの製造方法 Download PDFInfo
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- JP7257543B2 JP7257543B2 JP2021554343A JP2021554343A JP7257543B2 JP 7257543 B2 JP7257543 B2 JP 7257543B2 JP 2021554343 A JP2021554343 A JP 2021554343A JP 2021554343 A JP2021554343 A JP 2021554343A JP 7257543 B2 JP7257543 B2 JP 7257543B2
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Description
図2は、プラズマ処理装置1の構成の概略を模式的に示す縦断面図である。なお、以下の説明においてSiGe層とSi層の交互に配列された各層が露出する端面をSiGe層及びSi層の「露出面」と呼称する場合がある。
本実施形態にかかるプラズマ処理装置1は、以上のように構成されている。次に、プラズマ処理装置1を用いて行われるプラズマ処理について説明する。なお、プラズマ処理装置1に搬入されるウェハWには、あらかじめ前述のSi層とSiGe層が交互に積層して形成されている。
プラズマ化されたフッ素及び酸素を含む処理ガスを用いて、前記シリコンゲルマニウム層の露出面の表層を選択的に改質して酸化膜を形成する、基板処理方法。
前記(1)によれば、シリコン層とシリコンゲルマニウム層が交互に積層された基板のプラズマ処理においてフッ素及び酸素を含む処理ガスによりプラズマを生成し、かかるプラズマ化された処理ガスを供給することのみによって、適切にシリコンゲルマニウム層の改質(付着物の除去及びシリコンゲルマニウム層の酸化)を行うことができる。
前記(5)によれば、処理ガスをリモートプラズマ生成することにより、適切にSi層、SiGe層及びウェハWの損傷を抑制できるとともに、適切にSiGe層の改質を行うことができる。
前記(8)によれば、プラズマ処理の時間をかかる時間で制御することにより、さらに適切にSi層の損傷を抑制できる。また、プラズマ処理を繰り返し行うことにより、適切にSiGe層の露出面表層の改質を、すなわち露出面から所望の深さまで改質を行うことができる。
前記(9)、又は前記(10)によれば、露出面の表層に形成された酸化膜の少なくとも表層を更に改質して窒化膜、又は炭化膜を形成することで、例えばインナースペーサの形成後の処理工程で行われるウェットエッチング処理に対する耐性を向上させることができる。
プラズマ化されたフッ素及び酸素を含む処理ガスを用いて、前記シリコンゲルマニウム層の露出面の表層を選択的に改質して酸化膜を形成する処理部と、
前記処理部におけるプラズマ処理を制御する制御部と、を有する、基板処理装置。
前記制御部は、O2ガスに対するフッ素含有ガスの体積比率が0.1vol%以上、1.0vol%以下となるように、前記処理部における処理ガスの供給量を制御する、前記(11)に記載の基板処理装置。
プラズマ化されたフッ素及び酸素を含む処理ガスを用いて、前記シリコンゲルマニウム層の露出面の表層を選択的に改質して絶縁酸化膜を形成する、ナノワイヤ又はナノシートのトランジスタの製造方法。
60 制御装置
S 処理空間
W ウェハ
Claims (20)
- シリコン層とシリコンゲルマニウム層が交互に積層された基板の処理方法であって、
プラズマ化されたフッ素及び酸素を含む処理ガスを用いて、前記シリコンゲルマニウム層の露出面の表層を選択的に改質して酸化膜を形成し、
プラズマ化された窒素含有ガスを含む第2の処理ガスを用いて、前記酸化膜の少なくとも表層を改質して窒化膜を形成する、基板処理方法。 - シリコン層とシリコンゲルマニウム層が交互に積層された基板の処理方法であって、
プラズマ化されたフッ素及び酸素を含む処理ガスを用いて、前記シリコンゲルマニウム層の露出面の表層を選択的に改質して酸化膜を形成し、
プラズマ化された炭素含有ガスを含む第2の処理ガスを用いて、前記酸化膜の少なくとも表層を改質して炭化膜を形成する、基板処理方法。 - 前記処理ガスはO2ガス及びフッ素含有ガスを含み、O2ガスに対するフッ素含有ガスの体積比率が0.1vol%以上、1.0vol%以下である、請求項1または2に記載の基板処理方法。
- 前記フッ素含有ガスはNF3ガス、F2ガスまたはSF6ガスである、請求項3に記載の基板処理方法。
- 前記処理ガスは、H2ガス又は希ガスの少なくとも1種をさらに含む、請求項1~4のいずれか一項に記載の基板処理方法。
- 前記処理ガスのプラズマ化においてはリモートプラズマを使用する、請求項1~5のいずれか一項に記載の基板処理方法。
- 前記シリコンゲルマニウム層の前記露出面からのエッチング量は、前記基板に対するプラズマ処理時間に比例する、請求項1~6のいずれか一項に記載の基板処理方法。
- 前記酸化膜の形成厚みは、前記基板に対するプラズマ処理時間に依らず所望の値で飽和する、請求項1~7のいずれか一項に記載の基板処理方法。
- 前記基板に対するプラズマ処理は繰り返し行われ、1セットのプラズマ処理時間は30sec~180secである、請求項7または8に記載の基板処理方法。
- シリコン層とシリコンゲルマニウム層が交互に積層された基板を処理する基板処理装置であって、
プラズマ化されたフッ素及び酸素を含む処理ガスを用いて、前記シリコンゲルマニウム層の露出面の表層を選択的に改質して酸化膜を形成する処理部と、
前記処理部におけるプラズマ処理を制御する制御部と、を有し、
前記制御部は、プラズマ化された窒素含有ガスを含む第2の処理ガスを用いて、前記酸化膜の少なくとも表層を改質して窒化膜を形成するように、前記処理部におけるプラズマ処理を制御する、基板処理装置。 - シリコン層とシリコンゲルマニウム層が交互に積層された基板を処理する基板処理装置であって、
プラズマ化されたフッ素及び酸素を含む処理ガスを用いて、前記シリコンゲルマニウム層の露出面の表層を選択的に改質して酸化膜を形成する処理部と、
前記処理部におけるプラズマ処理を制御する制御部と、を有し、
前記制御部は、プラズマ化された炭素含有ガスを含む第2の処理ガスを用いて、前記酸化膜の少なくとも表層を改質して炭化膜を形成するように、前記処理部におけるプラズマ処理を制御する、基板処理装置。 - 前記処理ガスはO2ガス及びフッ素含有ガスを含み、
前記制御部は、O2ガスに対するフッ素含有ガスの体積比率が0.1vol%以上、1.0vol%以下となるように、前記処理部における処理ガスの供給量を制御する、請求項10または11に記載の基板処理装置。 - 前記フッ素含有ガスはNF3ガス、F2ガスまたはSF6ガスである、請求項12に記載の基板処理装置。
- 前記制御部は、H2ガス又は希ガスの少なくとも1種をさらに供給するように、前記処理部における前記処理ガスの供給を制御する、請求項10~13のいずれか一項に記載の基板処理装置。
- 前記処理部における前記処理ガスのプラズマ化においてはリモートプラズマを使用する、請求項10~14のいずれか一項に記載の基板処理装置。
- 前記プラズマ処理における前記シリコンゲルマニウム層の前記露出面からのエッチング量はプラズマ処理時間に比例する、請求項10~15のいずれか一項に記載の基板処理装置。
- 前記プラズマ処理における前記酸化膜の形成厚みはプラズマ処理時間に依らず所望の値で飽和する、請求項10~16のいずれか一項に記載の基板処理装置。
- 前記制御部は、前記基板に対するプラズマ処理を繰り返し行い、1セットのプラズマ処理時間を30sec~180secで制御する、請求項16または17に記載の基板処理装置。
- シリコン層とシリコンゲルマニウム層が交互に積層された基板を用いて行われるナノワイヤ又はナノシートのトランジスタの製造方法であって、
プラズマ化されたフッ素及び酸素を含む処理ガスを用いて、前記シリコンゲルマニウム層の露出面の表層を選択的に改質して絶縁酸化膜を形成し、
プラズマ化された窒素含有ガスを含む第2の処理ガスを用いて、前記絶縁酸化膜の少なくとも表層を改質して窒化膜を形成する、ナノワイヤ又はナノシートのトランジスタの製造方法。 - シリコン層とシリコンゲルマニウム層が交互に積層された基板を用いて行われるナノワイヤ又はナノシートのトランジスタの製造方法であって、
プラズマ化されたフッ素及び酸素を含む処理ガスを用いて、前記シリコンゲルマニウム層の露出面の表層を選択的に改質して絶縁酸化膜を形成し、
プラズマ化された炭素含有ガスを含む第2の処理ガスを用いて、前記絶縁酸化膜の少なくとも表層を改質して炭化膜を形成する、ナノワイヤ又はナノシートのトランジスタの製造方法。
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005019853A (ja) | 2003-06-27 | 2005-01-20 | Tokyo Electron Ltd | プラズマクリーニング方法および基板処理方法 |
JP2008160145A (ja) | 2008-02-04 | 2008-07-10 | Renesas Technology Corp | 絶縁ゲート型電界効果型トランジスタ及び半導体装置 |
JP2012160730A (ja) | 2011-01-28 | 2012-08-23 | Toshiba Corp | フィンを含む半導体構造およびその形成方法 |
JP2014170764A (ja) | 2012-04-27 | 2014-09-18 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
JP2015076459A (ja) | 2013-10-08 | 2015-04-20 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
JP2018006405A (ja) | 2016-06-28 | 2018-01-11 | 株式会社Screenホールディングス | エッチング方法 |
JP2019507505A (ja) | 2016-03-02 | 2019-03-14 | 東京エレクトロン株式会社 | 等方性シリコン及びシリコンゲルマニウムの調整可能な選択性を備えたエッチング |
US20190172755A1 (en) | 2017-12-04 | 2019-06-06 | Tokyo Electron Limited | Method for incorporating multiple channel materials in a complimentary field effective transistor (cfet) device |
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US9666449B2 (en) * | 2014-06-17 | 2017-05-30 | Micron Technology, Inc. | Conductors having a variable concentration of germanium for governing removal rates of the conductor during control gate formation |
US9716145B2 (en) * | 2015-09-11 | 2017-07-25 | International Business Machines Corporation | Strained stacked nanowire field-effect transistors (FETs) |
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US11011383B2 (en) * | 2018-01-22 | 2021-05-18 | Tokyo Electron Limited | Etching method |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2008160145A (ja) | 2008-02-04 | 2008-07-10 | Renesas Technology Corp | 絶縁ゲート型電界効果型トランジスタ及び半導体装置 |
JP2012160730A (ja) | 2011-01-28 | 2012-08-23 | Toshiba Corp | フィンを含む半導体構造およびその形成方法 |
JP2014170764A (ja) | 2012-04-27 | 2014-09-18 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
JP2015076459A (ja) | 2013-10-08 | 2015-04-20 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
JP2019507505A (ja) | 2016-03-02 | 2019-03-14 | 東京エレクトロン株式会社 | 等方性シリコン及びシリコンゲルマニウムの調整可能な選択性を備えたエッチング |
JP2018006405A (ja) | 2016-06-28 | 2018-01-11 | 株式会社Screenホールディングス | エッチング方法 |
US20190172755A1 (en) | 2017-12-04 | 2019-06-06 | Tokyo Electron Limited | Method for incorporating multiple channel materials in a complimentary field effective transistor (cfet) device |
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