JPWO2021085158A1 - - Google Patents

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JPWO2021085158A1
JPWO2021085158A1 JP2021554343A JP2021554343A JPWO2021085158A1 JP WO2021085158 A1 JPWO2021085158 A1 JP WO2021085158A1 JP 2021554343 A JP2021554343 A JP 2021554343A JP 2021554343 A JP2021554343 A JP 2021554343A JP WO2021085158 A1 JPWO2021085158 A1 JP WO2021085158A1
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JP2021554343A
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JP7257543B2 (ja
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    • HELECTRICITY
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    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
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    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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    • C23C28/34Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
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    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/341Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one carbide layer
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    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
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    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
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    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
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    • C23C8/08Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
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    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
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    • C23C8/36Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
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    • C23C8/80After-treatment
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005019853A (ja) * 2003-06-27 2005-01-20 Tokyo Electron Ltd プラズマクリーニング方法および基板処理方法
JP2008160145A (ja) * 2008-02-04 2008-07-10 Renesas Technology Corp 絶縁ゲート型電界効果型トランジスタ及び半導体装置
JP2012160730A (ja) * 2011-01-28 2012-08-23 Toshiba Corp フィンを含む半導体構造およびその形成方法
JP2014170764A (ja) * 2012-04-27 2014-09-18 Tokyo Electron Ltd 成膜方法及び成膜装置
JP2015076459A (ja) * 2013-10-08 2015-04-20 株式会社日立ハイテクノロジーズ ドライエッチング方法
JP2018006405A (ja) * 2016-06-28 2018-01-11 株式会社Screenホールディングス エッチング方法
JP2019507505A (ja) * 2016-03-02 2019-03-14 東京エレクトロン株式会社 等方性シリコン及びシリコンゲルマニウムの調整可能な選択性を備えたエッチング
US20190172755A1 (en) * 2017-12-04 2019-06-06 Tokyo Electron Limited Method for incorporating multiple channel materials in a complimentary field effective transistor (cfet) device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5851349B2 (ja) * 2012-06-04 2016-02-03 株式会社日立ハイテクノロジーズ プラズマエッチング方法及びプラズマエッチング装置
US9666449B2 (en) * 2014-06-17 2017-05-30 Micron Technology, Inc. Conductors having a variable concentration of germanium for governing removal rates of the conductor during control gate formation
US9716145B2 (en) * 2015-09-11 2017-07-25 International Business Machines Corporation Strained stacked nanowire field-effect transistors (FETs)
JP6812880B2 (ja) 2017-03-29 2021-01-13 東京エレクトロン株式会社 基板処理方法及び記憶媒体。
US11011383B2 (en) * 2018-01-22 2021-05-18 Tokyo Electron Limited Etching method
WO2019199922A1 (en) * 2018-04-13 2019-10-17 Mattson Technology, Inc. Processing of workpieces with reactive species generated using alkyl halide

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005019853A (ja) * 2003-06-27 2005-01-20 Tokyo Electron Ltd プラズマクリーニング方法および基板処理方法
JP2008160145A (ja) * 2008-02-04 2008-07-10 Renesas Technology Corp 絶縁ゲート型電界効果型トランジスタ及び半導体装置
JP2012160730A (ja) * 2011-01-28 2012-08-23 Toshiba Corp フィンを含む半導体構造およびその形成方法
JP2014170764A (ja) * 2012-04-27 2014-09-18 Tokyo Electron Ltd 成膜方法及び成膜装置
JP2015076459A (ja) * 2013-10-08 2015-04-20 株式会社日立ハイテクノロジーズ ドライエッチング方法
JP2019507505A (ja) * 2016-03-02 2019-03-14 東京エレクトロン株式会社 等方性シリコン及びシリコンゲルマニウムの調整可能な選択性を備えたエッチング
JP2018006405A (ja) * 2016-06-28 2018-01-11 株式会社Screenホールディングス エッチング方法
US20190172755A1 (en) * 2017-12-04 2019-06-06 Tokyo Electron Limited Method for incorporating multiple channel materials in a complimentary field effective transistor (cfet) device

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