JP7252770B2 - 高周波デバイスおよびマルチプレクサ - Google Patents
高周波デバイスおよびマルチプレクサ Download PDFInfo
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- 239000003990 capacitor Substances 0.000 claims description 70
- 229910000679 solder Inorganic materials 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 42
- 230000000052 comparative effect Effects 0.000 description 20
- 230000004048 modification Effects 0.000 description 16
- 238000012986 modification Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 239000010949 copper Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 240000001973 Ficus microcarpa Species 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BBKFSSMUWOMYPI-UHFFFAOYSA-N gold palladium Chemical compound [Pd].[Au] BBKFSSMUWOMYPI-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H05K3/4007—Surface contacts, e.g. bumps
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Description
図7は、比較例1に係る高周波デバイスの断面図である。図7に示すように、比較例1に係る高周波デバイス110では、端子25aおよび25bは回路基板20の上面21bに設けられている。弾性波素子10は、回路基板20の上面21bに実装されている。端子T25bとノードN3とはビア配線24cから24fを介し電気的に接続されている。端子T25aとグランド端子Tgとはビア配線24aから24fを介し電気的に接続されている。その他の構成は実施例1と同じであり説明を省略する。
図12は、実施例1の変形例1に係る高周波デバイスの回路図である。図12のように、高周波デバイス102では、端子T1とT2との間に弾性波共振器Rが接続されている。弾性波共振器Rと端子T1との間のノードN1と、弾性波共振器Rと端子T2との間のノードN2と、の間に弾性波共振器Rと並列にキャパシタC1およびC2が並列接続されている。キャパシタC1およびC2はノードN1とN2との間に互いに直列接続されている。キャパシタC1とC2との間のノードN3とグランド端子Tgとの間にインダクタLが接続されている。弾性波共振器RとノードN1およびN2との間に経路L5およびL6が形成される。その他の構成は実施例1と同じであり説明を省略する。
図13(a)および図13(b)は、実施例1の変形例2に係る高周波デバイスを実装基板に実装した断面図および平面図である。なお、断面図と平面図とは一致していない。図13(a)および図13(b)に示すように、端子23、25aおよび25bにバンプが設けられていない。実装基板40の上面に凹部44が設けられている。弾性波素子10は凹部44内に収まる。その他の構成は実施例1と同じであり説明を省略する。
図14は、実施例1の変形例3に係る高周波デバイスを実装基板に実装した平面図である。図14に示すように、実装基板40は回路基板20と同じ大きさまたは回路基板20より小さい。その他の構成は実施例1の変形例2と同じであり説明を省略する。
12 弾性波共振器
20 回路基板
20a-20f 誘電体層
21 方向識別マーク
21a 回路基板の下面
21b 回路基板の上面
22a-22e 配線パターン
24a-24f ビア配線
23、25 端子
26、28 バンプ
46 ハイパスフィルタ
48 ローパスフィルタ
50 回路基板の中心
52a、52b 領域
60 共振回路
62 直列共振回路
Claims (9)
- 積層された複数の誘電体層と、前記複数の誘電体層の少なくとも1つの誘電体層の上に設けられた複数の配線パターンと、前記複数の配線パターンの少なくとも1つの配線パターンにより各々形成された第1キャパシタ、第2キャパシタおよびインダクタと、を備え、前記複数の誘電体層の積層方向で最も端の誘電体層の表面である第1面と前記第1面と反対側の表面である第2面とを有する回路基板と、
前記第1面に各々設けられ、外部と各々接続するためのグランド端子、第1信号端子および第2信号端子と、
前記第1面上に設けられた弾性波共振器と、
を備え、
前記第1キャパシタおよび前記第2キャパシタは、前記回路基板の前記積層方向の中心より前記第1面側の第1領域に設けられ、
前記インダクタは、前記中心より前記第2面側の第2領域に設けられ、
前記第1キャパシタの一端は、前記第1信号端子に前記回路基板内の第1経路を介し電気的に接続され、前記弾性波共振器に電気的に接続されておらず、
前記第1キャパシタの他端と前記第2キャパシタの一端とは前記回路基板内のノードにおいて電気的に接続され、
前記ノードは、前記弾性波共振器の一端に前記回路基板内の第2経路を介し電気的に接続され、
前記第2キャパシタの他端は、前記第2信号端子に電気的に接続され、前記弾性波共振器に電気的に接続されておらず、
前記弾性波共振器の他端は前記グランド端子に前記回路基板内の第3経路を介し電気的に接続され、
前記インダクタは、前記第1信号端子および前記第2信号端子の間の経路において前記第1キャパシタおよび前記第2キャパシタと並列接続され、
前記第2経路および前記第3経路の合計の長さは、前記回路基板の厚さと、前記第1キャパシタの他端と前記第2面との距離と、の合計より短い高周波デバイス。 - 前記弾性波共振器、前記第1キャパシタ、前記第2キャパシタおよび前記インダクタはローパスフィルタを形成し、
前記弾性波共振器の共振周波数は前記ローパスフィルタの通過帯域より高い請求項1に記載の高周波デバイス。 - 前記弾性波共振器および前記第2経路および前記第3経路により形成される共振回路の共振周波数は前記弾性波共振器の共振周波数より高い請求項2に記載の高周波デバイス。
- 前記積層方向における前記第1面から前記グランド端子、前記第1信号端子および前記第2信号端子の前記第1面から最も遠い表面までの高さは前記第1面から前記弾性波共振器の前記第1面から最も遠い面までの高さより大きい請求項1から3のいずれか一項に記載の高周波デバイス。
- 前記グランド端子、前記第1信号端子および前記第2信号端子は、半田からなる外層と、前記半田の融点より高い融点を有し前記外層に囲まれたコアと、を備え、前記積層方向における前記コアの幅は前記第1面から前記弾性波共振器の前記第1面と反対の面までの高さより大きい請求項4に記載の高周波デバイス。
- 前記回路基板の前記第2面に設けられた方向識別マークを備える請求項1から5のいずれか一項に記載の高周波デバイス。
- 前記インダクタの一端は、前記回路基板内において前記第1キャパシタの一端に電気的に接続され、
前記インダクタの他端は、前記回路基板内において前記第2キャパシタの他端に電気的に接続される請求項1から6のいずれか一項に記載の高周波デバイス。 - 前記弾性波共振器は、バンプを介し前記第1面に接合されている請求項1から7のいずれか一項に記載の高周波デバイス。
- 請求項1から8のいずれか一項に記載の高周波デバイスを含むマルチプレクサ。
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