JP7249705B1 - 成膜装置、成膜方法及びガスノズル - Google Patents
成膜装置、成膜方法及びガスノズル Download PDFInfo
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- JP7249705B1 JP7249705B1 JP2022142182A JP2022142182A JP7249705B1 JP 7249705 B1 JP7249705 B1 JP 7249705B1 JP 2022142182 A JP2022142182 A JP 2022142182A JP 2022142182 A JP2022142182 A JP 2022142182A JP 7249705 B1 JP7249705 B1 JP 7249705B1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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Abstract
Description
以下、本発明の実施の形態1について、図1~図8を参照して説明する。
以下、本発明の実施の形態2について、図9及び図10を参照して説明する。
以下、本発明の実施の形態3について、図11を参照して説明する。
以下、本発明の実施の形態4について、図12を参照して説明する。
以下、本発明の実施の形態5について、図13を参照して説明する。
以下、本発明の実施の形態6について、図14を参照して説明する。
以下、本発明の実施の形態7について、図15及び図16を参照して説明する。
以下、本発明の実施の形態8について、図17を参照して説明する。
以下、本発明の実施の形態9について、図18及び図19を参照して説明する。
以下、本発明の実施の形態10について、図20を参照して説明する。
以下、本発明の実施の形態11について、図21及び図22を参照して説明する。
以下、本発明の実施の形態12について、図23~図27を参照して説明する。
以下、本発明の実施の形態13について、図28~図32を参照して説明する。
以下、本発明の実施の形態14について、図33を参照して説明する。
以下、本発明の実施の形態15について、図34~図36を参照して説明する。
以下、本発明の実施の形態16について、図37~図39を参照して説明する。
以下、本発明の実施の形態17について、図40を参照して説明する。
以下、本発明の実施の形態18について、図41及び図42を参照して説明する。
以下、本発明の実施の形態19について、図43を参照して説明する。
以下、本発明の実施の形態20について、図44~図49を参照して説明する。
以下、本発明の実施の形態21について、図50~図53を参照して説明する。
第一リング77の先端が第二リング86の先端から飛び出している。また、第二リング86を挿入する、第二リング86の外壁面と相似形の内壁面を有する第三リング92をさらに備えており、第三ガスが、第三リング92に設けられた貫通穴である第三導入孔97、並びに、第三リング92の内壁面及び第二リング86の外壁面との間の隙間を通って流れ出るよう構成されており、第二リング86の先端が第三リング92の先端から飛び出している。
以下、本発明の実施の形態22について、図54を参照して説明する。
以下、本発明の実施の形態23について、図55~図58を参照して説明する。
以下、本発明の実施の形態24について、図59~図61を参照して説明する。
以下、本発明の実施の形態25について、図62を参照して説明する。
以下、本発明の実施の形態26について、図63を参照して説明する。
以下、本発明の実施の形態27について、図64及び図65を参照して説明する。
以下、本発明の実施の形態28について、図66を参照して説明する。
以下、本発明の実施の形態29について、図67及び図68を参照して説明する。
以下、本発明の実施の形態30について、図69を参照して説明する。
(実施の形態31)
以下、本発明の実施の形態31について、図70を参照して説明する。
8 サセプタ
9 斜面
10 座グリ部
11 端面
15 サセプタの上面
17 サセプタホルダ
18 シャワープレート
19 ガス噴出孔
20 オーリング
21 蓋
22 パージガス供給管
23 プリカーサを含むガス供給管
24 パージガス供給管
25 酸化剤を含むガス供給管
29 ゲート開口
Claims (11)
- 反応室を備え、
前記反応室内に、鉛直面に対して傾いた基板載置面を持つサセプタを複数備え、前記複数のサセプタは水平方向に並べられており、
前記複数のサセプタのうちの二つのサセプタが、上方ほどサセプタ間の距離が広くなるように配置されている成膜装置であって、
前記複数のサセプタの前記基板載置面は薄板により構成され、ランプ、抵抗加熱、誘導加熱のいずれかによって加熱され、
前記複数のサセプタは、各々、上方ほど距離が狭くなるように向かい合っている少なくとも2枚の平板からなり、
前記2枚の平板の間に、熱電対を配置して温度をモニタリングすることにより、前記複数のサセプタの温度制御を行う成膜装置。 - 反応室を備え、
前記反応室内に、鉛直面に対して傾いた基板載置面を持つサセプタを複数備え、前記複数のサセプタは水平方向に並べられており、
前記複数のサセプタのうちの二つのサセプタが、上方ほどサセプタ間の距離が広くなるように配置されている成膜装置であって、
前記複数のサセプタの前記基板載置面は薄板により構成され、
前記複数のサセプタは、各々、上方ほど距離が狭くなるように向かい合っている少なくとも2枚の平板からなり、
前記複数のサセプタは、内部が空洞であり、底面において前記2枚の平板が接する部分を除く底面全体が開口部となっており、前記開口部を介して、前記複数のサセプタよりも下方に配置されたランプによってその裏面が加熱される成膜装置。 - 反応室を備え、
前記反応室内に、鉛直面に対して傾いた基板載置面を持つサセプタを複数備え、前記複数のサセプタは水平方向に並べられており、
前記複数のサセプタのうちの二つのサセプタが、上方ほどサセプタ間の距離が広くなるように配置されている成膜装置であって、
前記複数のサセプタの前記基板載置面は薄板により構成され、
前記複数のサセプタは、各々、上方ほど距離が狭くなるように向かい合っている少なくとも2枚の平板からなり、
複数の前記サセプタが、前記反応室内のドーナツ状空間に放射状に配置され、
複数の前記サセプタを、前記ドーナツ状空間内でドーナツ形状の周方向に回転させる回転機構を備え、
複数の前記サセプタは、前記サセプタよりも下方に前記反応室の半径方向に長く放射状に配置され前記反応室に固定された直管ランプと、前記ランプの下方に設けられた反射板により加熱される成膜装置。 - 前記薄板の厚さが1mm以上5mm以下である、請求項1、2又は3記載の成膜装置。
- 前記基板載置面を構成する前記薄板が、シリコン、炭化珪素又は炭素のいずれかからなる、
請求項1、2又は3記載の成膜装置。 - 前記サセプタの温度を、放射温度計によりモニタリングすることにより、前記複数のサセプタの温度制御を行う、請求項2又は3記載の成膜装置。
- 複数の前記サセプタが、前記反応室内のドーナツ状空間に放射状に配置され、
複数の前記サセプタを、前記ドーナツ状空間内でドーナツ形状の周方向に回転させる回転機構を備える、請求項1又は2記載の成膜装置。 - 反応室内に設けられた、鉛直面に対して傾いた基板載置面を備えた複数のサセプタ上の前記基板載置面に、前記反応室外から基板を移動させて載置するステップと、
前記反応室内にガスを供給しつつ前記反応室からガスを排気するステップと、
前記基板載置面から前記基板を前記反応室外に移動させて取り出すステップと、を含み、
前記複数のサセプタは水平方向に並べられており、
前記複数のサセプタのうちの二つのサセプタが、上方ほどサセプタ間の距離が広くなるように配置されている成膜方法であって、
前記複数のサセプタの前記基板載置面は薄板により構成され、ランプ、抵抗加熱、誘導加熱のいずれかによって加熱され、
前記複数のサセプタは、各々、上方ほど距離が狭くなるように向かい合っている少なくとも2枚の平板からなり、
前記2枚の平板の間に、熱電対を配置して温度をモニタリングすることにより、前記複数のサセプタの温度制御を行う成膜方法。 - 反応室内に設けられた、鉛直面に対して傾いた基板載置面を備えた複数のサセプタ上の前記基板載置面に、前記反応室外から基板を移動させて載置するステップと、
前記反応室内にガスを供給しつつ前記反応室からガスを排気するステップと、
前記基板載置面から前記基板を前記反応室外に移動させて取り出すステップと、を含み、
前記複数のサセプタは水平方向に並べられており、
前記複数のサセプタのうちの二つのサセプタが、上方ほどサセプタ間の距離が広くなるように配置されている成膜方法であって、
前記複数のサセプタの前記基板載置面は薄板により構成され、
前記複数のサセプタは、各々、上方ほど距離が狭くなるように向かい合っている少なくとも2枚の平板からなり、
前記複数のサセプタは、内部が空洞であり、底面において前記2枚の平板が接する部分を除く底面全体が開口部となっており、前記開口部を介して、前記複数のサセプタよりも下方に配置されたランプによってその裏面が加熱される成膜方法。 - 反応室内に設けられた、鉛直面に対して傾いた基板載置面を備えた複数のサセプタ上の前記基板載置面に、前記反応室外から基板を移動させて載置するステップと、
前記反応室内にガスを供給しつつ前記反応室からガスを排気するステップと、
前記基板載置面から前記基板を前記反応室外に移動させて取り出すステップと、を含み、
前記複数のサセプタは水平方向に並べられており、
前記複数のサセプタのうちの二つのサセプタが、上方ほどサセプタ間の距離が広くなるように配置されている成膜方法であって、
前記複数のサセプタの前記基板載置面は薄板により構成され、
前記複数のサセプタは、各々、上方ほど距離が狭くなるように向かい合っている少なくとも2枚の平板からなり、
複数の前記サセプタが、前記反応室内のドーナツ状空間に放射状に配置され、
複数の前記サセプタを、前記ドーナツ状空間内でドーナツ形状の周方向に回転させる、
複数の前記サセプタは、前記サセプタよりも下方に前記反応室の半径方向に長く放射状に配置され前記反応室に固定された直管ランプと、前記ランプの下方に設けられた反射板により加熱される成膜方法。 - 前記複数の基板載置面が、前記反応室内のドーナツ状空間に放射状に配置され、
前記複数の基板載置面を、前記ドーナツ状空間内でドーナツ形状の周方向に回転させる、
請求項8又は9記載の成膜方法。
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