JP7240149B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7240149B2 JP7240149B2 JP2018218600A JP2018218600A JP7240149B2 JP 7240149 B2 JP7240149 B2 JP 7240149B2 JP 2018218600 A JP2018218600 A JP 2018218600A JP 2018218600 A JP2018218600 A JP 2018218600A JP 7240149 B2 JP7240149 B2 JP 7240149B2
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- 239000004065 semiconductor Substances 0.000 title claims description 87
- 239000000463 material Substances 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 238000002955 isolation Methods 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 31
- 239000010410 layer Substances 0.000 claims description 23
- 150000002736 metal compounds Chemical class 0.000 claims description 19
- 230000015654 memory Effects 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 claims description 2
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical group [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 3
- 239000010408 film Substances 0.000 description 102
- 238000010586 diagram Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- UAJUXJSXCLUTNU-UHFFFAOYSA-N pranlukast Chemical compound C=1C=C(OCCCCC=2C=CC=CC=2)C=CC=1C(=O)NC(C=1)=CC=C(C(C=2)=O)C=1OC=2C=1N=NNN=1 UAJUXJSXCLUTNU-UHFFFAOYSA-N 0.000 description 5
- 229960004583 pranlukast Drugs 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 238000002161 passivation Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Dicing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
図1は、第1実施形態に従った半導体ウェハの一例を示す概略平面図である。半導体ウェハWは、複数のデバイス領域Rdevと、複数のダイシング領域Rdicとを備えている。デバイス領域Rdevおよびダイシング領域Rdicは、半導体ウェハWの表面上の領域である。
図12は、半導体装置のパッケージング後の状態を示す断面図である。ダイシング後、半導体チップ1は、実装基板(図示せず)に実装され、樹脂部としての樹脂60で封止される。樹脂60は、ダイシング領域Rdicおよびデバイス領域Rdevの両方の上方に設けられている。また、図12に示すように、第1金属膜40eおよび突出部70がまだ存在する場合、樹脂60は、材料膜20、第1金属膜40e、突出部70およびパッシべーション膜50を被覆し、それらに接触する。溝部TRは、樹脂60で充填される。
Claims (7)
- 半導体素子が設けられた第1領域、および、前記第1領域よりも端部側に設けられた第2領域を有する基板と、
前記基板に設けられた材料膜と、
前記材料膜に設けられた第1金属膜と、
前記第1領域と前記第2領域との間で前記第1金属膜よりも前記第1領域に近い側に設けられ、前記材料膜の表面から前記基板へ向かって窪むように形成された溝部と、
前記基板の表面に垂直な方向を第1方向とし、前記基板の表面に平行な方向を第2方向としたとき、前記第1方向から見たとき、前記溝部と少なくとも一部が重なるように前記基板の表面に設けられた素子分離部と、
前記第2方向から見たとき、前記溝部よりも前記第1領域に近い部分に設けられ、前記基板から前記第1方向に沿って伸びる第1導電体と、
前記溝部を埋める第1樹脂と、備え、
前記溝部のもっとも前記基板に近い底部は、前記第1方向に沿って、前記第1導電体の上端部と前記第1導電体の下端部との間にある、
半導体装置。 - 前記材料膜には、前記素子分離部から前記溝部へ延びる亀裂がある、請求項1に記載の半導体装置。
- 前記基板と前記材料膜との間に設けられた金属化合物層をさらに備え、
前記材料膜の端部から前記素子分離部まで前記材料膜と前記金属化合物層との間に亀裂があり、該亀裂は前記素子分離部から前記溝部へと延びている、請求項1に記載の半導体装置。 - 前記材料膜は、複数のシリコン酸化膜と複数のシリコン窒化膜または複数の第2金属膜とを交互に積層した積層膜、あるいは、絶縁膜からなる単層膜であり、
前記金属化合物層は、タングステンシリサイド(WSi)またはタングステンナイトライド(WN)である、請求項3に記載の半導体装置。 - 前記素子分離部は、前記金属化合物層を分断している、請求項3に記載の半導体装置。
- 前記第2方向から見たとき、前記第1金属膜よりも前記端部側にある前記材料膜の表面は、前記第1方向からみて前記第1金属膜と重なる部分の前記材料膜の表面よりも前記基板に近い位置にある、請求項1に記載の半導体装置。
- 前記材料膜は、 複数のシリコン酸化膜と複数のシリコン窒化膜とを交互に積層した積層膜であり、
前記半導体素子はメモリセルアレイであり、該メモリセルアレイは、複数のシリコン酸化膜と複数の金属膜とを交互に積層した積層膜を含む、請求項1から請求項6のいずれか一項に記載の半導体装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/254,646 US20200075508A1 (en) | 2018-08-29 | 2019-01-23 | Semiconductor device |
CN201910143420.8A CN110931544B (zh) | 2018-08-29 | 2019-02-26 | 半导体装置 |
TW108106852A TWI699889B (zh) | 2018-08-29 | 2019-02-27 | 半導體裝置 |
US16/791,798 US11183469B2 (en) | 2018-08-29 | 2020-02-14 | Semiconductor device |
US17/513,212 US11610852B2 (en) | 2018-08-29 | 2021-10-28 | Semiconductor device |
US18/171,954 US20230197641A1 (en) | 2018-08-29 | 2023-02-21 | Semiconductor device |
Applications Claiming Priority (2)
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JP2018160575 | 2018-08-29 | ||
JP2018160575 | 2018-08-29 |
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JP2020038952A JP2020038952A (ja) | 2020-03-12 |
JP7240149B2 true JP7240149B2 (ja) | 2023-03-15 |
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JP2018218600A Active JP7240149B2 (ja) | 2018-08-29 | 2018-11-21 | 半導体装置 |
Country Status (4)
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US (2) | US11610852B2 (ja) |
JP (1) | JP7240149B2 (ja) |
CN (1) | CN110931544B (ja) |
TW (1) | TWI699889B (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009239149A (ja) | 2008-03-28 | 2009-10-15 | Nec Electronics Corp | 半導体ウエハ、半導体チップ、半導体装置、及び半導体装置の製造方法 |
JP2013016540A (ja) | 2011-06-30 | 2013-01-24 | Fujitsu Semiconductor Ltd | 半導体装置とその製造方法 |
JP2013055183A (ja) | 2011-09-02 | 2013-03-21 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
JP2013149640A (ja) | 2012-01-17 | 2013-08-01 | Fujitsu Semiconductor Ltd | 半導体装置及び半導体装置の製造方法 |
JP2013157651A (ja) | 2013-05-24 | 2013-08-15 | Renesas Electronics Corp | 半導体装置 |
JP2014022611A (ja) | 2012-07-19 | 2014-02-03 | Renesas Electronics Corp | 半導体装置及びその製造方法 |
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US6492247B1 (en) | 2000-11-21 | 2002-12-10 | International Business Machines Corporation | Method for eliminating crack damage induced by delaminating gate conductor interfaces in integrated circuits |
JP4489345B2 (ja) * | 2002-12-13 | 2010-06-23 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US20050026397A1 (en) * | 2003-07-28 | 2005-02-03 | International Business Machines Corporation | Crack stop for low k dielectrics |
JP4813778B2 (ja) * | 2004-06-30 | 2011-11-09 | 富士通セミコンダクター株式会社 | 半導体装置 |
US7777338B2 (en) * | 2004-09-13 | 2010-08-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Seal ring structure for integrated circuit chips |
JP4869664B2 (ja) * | 2005-08-26 | 2012-02-08 | 本田技研工業株式会社 | 半導体装置の製造方法 |
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JP5446107B2 (ja) * | 2008-03-17 | 2014-03-19 | 三菱電機株式会社 | 素子ウェハおよび素子ウェハの製造方法 |
JP5638818B2 (ja) * | 2010-03-15 | 2014-12-10 | セイコーインスツル株式会社 | 半導体装置およびその製造方法 |
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-
2018
- 2018-11-21 JP JP2018218600A patent/JP7240149B2/ja active Active
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2019
- 2019-02-26 CN CN201910143420.8A patent/CN110931544B/zh active Active
- 2019-02-27 TW TW108106852A patent/TWI699889B/zh active
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2021
- 2021-10-28 US US17/513,212 patent/US11610852B2/en active Active
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2023
- 2023-02-21 US US18/171,954 patent/US20230197641A1/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009239149A (ja) | 2008-03-28 | 2009-10-15 | Nec Electronics Corp | 半導体ウエハ、半導体チップ、半導体装置、及び半導体装置の製造方法 |
JP2013016540A (ja) | 2011-06-30 | 2013-01-24 | Fujitsu Semiconductor Ltd | 半導体装置とその製造方法 |
JP2013055183A (ja) | 2011-09-02 | 2013-03-21 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
JP2013149640A (ja) | 2012-01-17 | 2013-08-01 | Fujitsu Semiconductor Ltd | 半導体装置及び半導体装置の製造方法 |
JP2014022611A (ja) | 2012-07-19 | 2014-02-03 | Renesas Electronics Corp | 半導体装置及びその製造方法 |
JP2013157651A (ja) | 2013-05-24 | 2013-08-15 | Renesas Electronics Corp | 半導体装置 |
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TWI699889B (zh) | 2020-07-21 |
US20220051995A1 (en) | 2022-02-17 |
TW202010128A (zh) | 2020-03-01 |
CN110931544A (zh) | 2020-03-27 |
US11610852B2 (en) | 2023-03-21 |
US20230197641A1 (en) | 2023-06-22 |
JP2020038952A (ja) | 2020-03-12 |
CN110931544B (zh) | 2023-10-20 |
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