JP7210538B2 - 周期的な不動態化およびエッチングを使用する高アスペクト比の選択的横方向エッチング - Google Patents
周期的な不動態化およびエッチングを使用する高アスペクト比の選択的横方向エッチング Download PDFInfo
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- JP7210538B2 JP7210538B2 JP2020505402A JP2020505402A JP7210538B2 JP 7210538 B2 JP7210538 B2 JP 7210538B2 JP 2020505402 A JP2020505402 A JP 2020505402A JP 2020505402 A JP2020505402 A JP 2020505402A JP 7210538 B2 JP7210538 B2 JP 7210538B2
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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Description
本出願は、全ての目的のために本明細書に組み入れられる、2017年8月2日に提出された、名称を「HIGH ASPECT RATIO SELECTIVE LATERAL ETCH USING CYCLIC PASSIVATION AND ETCHING(周期的な不動態化およびエッチングを使用する高アスペクト比の選択的横方向エッチング)」とする米国特許出願15/667,551号に基づく優先権の利益を主張する。
エッチング操作
堆積操作
剥離操作
装置
Claims (22)
- 基板上の特徴の側壁から不要な材料を横方向にエッチングする方法であって、
(a)エッチングプラズマに前記基板を暴露することによりエッチング操作を実行し、前記エッチングプラズマは、エッチング反応物を有する、遠隔で発生させられた誘導結合プラズマを備え、前記エッチング操作は、前記特徴の前記側壁の一部分から前記不要な材料を横方向にエッチングし、
(b)堆積プラズマに前記基板を暴露することにより堆積操作を実行し、前記堆積プラズマは、堆積反応物を有する容量結合プラズマを備え、前記堆積操作は、前記特徴の前記側壁の第2の部分の全域にわたって保護フィルムを形成し、前記保護フィルムは、前記側壁の最上部近くで最も厚く、かつ前記側壁の最下部まで延伸しないように非共形であり、
(c)前記不要な材料が前記特徴の前記側壁全体に沿って横方向にエッチングされるまで、前記(a)の前記エッチング操作および前記(b)の前記堆積操作を反復し、前記(a)の異なる反復は、前記特徴の前記側壁の異なる部分から前記不要な材料を横方向にエッチングし、前記(b)の異なる反復は、前記特徴の前記側壁の異なる第2の部分の全域にわたって前記保護フィルムを堆積させ、前記(a)における前記エッチング操作の少なくとも1つの反復の間、横方向にエッチングされる前記側壁の前記部分は、前記(b)の先行する反復で堆積された前記保護フィルムにより覆われる前記側壁の前記第2の部分の真下にある、
方法。 - 請求項1に記載の方法であって、前記(a)における前記エッチング操作の第1の反復は、前記(a)の前記第1の反復が前記側壁上に前記保護フィルムなしで実行されるように、前記(b)における前記堆積操作の第1の反復の前に実行され、前記(a)の前記第1の反復において横方向にエッチングされる前記側壁の前記部分は、前記側壁の最上部部分である、方法。
- 請求項2に記載の方法であって、前記(b)における前記堆積操作の前記第1の反復は、前記(a)における前記エッチング操作の前記第1の反復において横方向にエッチングされた前記側壁の同じ前記部分上に前記保護フィルムを形成する、方法。
- 請求項3に記載の方法であって、前記(a)における前記エッチング操作の第2の反復は、前記(b)における前記堆積操作の前記第1の反復の後に実行され、前記(a)の前記第2の反復において横方向にエッチングされる前記側壁の前記部分は、前記(a)の前記第1の反復において横方向にエッチングされる前記側壁の前記部分と比較して前記特徴内のより深い所にある、方法。
- 請求項2に記載の方法であって、前記保護フィルムが前記(b)における前記堆積操作の各反復において形成する前記側壁の前記第2の部分は、前記不要な材料が前記(a)における前記エッチング操作の直前の反復において取り除かれる前記側壁の前記部分を含み、その結果、前記保護フィルムは、前記(a)の先行する反復においてエッチングされたばかりの前記側壁の前記部分を覆うように前記(b)において常に形成される、方法。
- 請求項2に記載の方法であって、前記不要な材料は、前記(a)および前記(b)の追加の反復が実行される際に、前記側壁の前記最上部から前記側壁の前記最下部に向かう順序で取り除かれる、方法。
- 請求項6に記載の方法であって、前記保護フィルムは、前記(b)の前記追加の反復が実行される際に、前記側壁に沿って次第に深く到達するように形成される、方法。
- 請求項7に記載の方法であって、前記保護フィルムは、前記(b)の異なる反復における異なる堆積条件のセットを使用して形成される、方法。
- 請求項8に記載の方法であって、前記(b)の前記異なる反復における前記異なる堆積条件のセットは、基板支持物温度、圧力、前記堆積反応物の流量、および前記容量結合プラズマを生成するために使用するRF出力からなるグループから選択される少なくとも1つの変数に関して互いに変化する、方法。
- 請求項1に記載の方法であって、前記(b)における前記堆積操作の第1の反復は、前記(a)における前記エッチング操作の第1の反復の前に、前記保護フィルムが前記側壁上に存在する間に前記(a)の前記第1の反復が実行されるように実行される、方法。
- 請求項10に記載の方法であって、前記不要な材料は、前記(a)および前記(b)の追加の反復が実行される際、前記側壁の前記最下部から前記側壁の前記最上部に向かう順序で取り除かれる、方法。
- 請求項11に記載の方法であって、前記保護フィルムは、前記(b)の前記追加の反復が実行される際、前記側壁に沿って次第に浅く到達するように形成される、方法。
- 請求項11に記載の方法であって、さらに、前記(a)における前記エッチング操作の各反復の後であって、かつ前記(b)における前記堆積操作の次の反復で前記保護フィルムを堆積させる前に、前記側壁から前記保護フィルムを剥離し、前記保護フィルムを剥離することは、酸素を有する剥離プラズマに前記基板を暴露することを備える、方法。
- 請求項1から請求項13のいずれか一項に記載の方法であって、前記保護フィルムは、ヒドロフルオロカーボンに基づく高分子フィルムである、方法。
- 請求項1から請求項14のいずれか一項に記載の方法であって、前記エッチング反応物は、フッ素ラジカルを作り出す、方法。
- 請求項1から請求項15のいずれか一項に記載の方法であって、前記不要な材料は、金属を備える、方法。
- 請求項1から請求項15のいずれか一項に記載の方法であって、前記不要な材料は、ポリシリコンである、方法。
- 請求項1から請求項15のいずれか一項に記載の方法であって、前記不要な材料は、窒化ケイ素である、方法。
- 請求項1から請求項18のいずれか一項に記載の方法であって、前記(a)および前記(b)は、同じ反応チャンバ内で実行され、前記反応チャンバは、
ガス分配機器により分離された下部チャンバ領域および上部チャンバ領域と、
前記上部チャンバ領域内に前記誘導結合プラズマを発生させる誘導結合プラズマ源と、
前記下部チャンバ領域内に前記容量結合プラズマを発生させる容量結合プラズマ源と
を備える方法。 - 請求項1から請求項18のいずれか一項に記載の方法であって、前記(a)および前記(b)は、異なる反応チャンバ内で行われ、さらに、前記(a)および前記(b)の実行に応じて、前記異なる反応チャンバの間で前記基板を移送する、方法。
- 請求項1から請求項20のいずれか一項に記載の方法であって、前記特徴は、第1の積層材料および第2の積層材料からなる交互層を備える積層の形で形成され、前記(a)における前記エッチング操作は、前記第1の積層材料および前記第2の積層材料のうち少なくとも一方を暴露し、前記(a)における前記エッチング操作は、前記不要な材料が前記第1の積層材料および前記第2の積層材料と比較して優先的に取り除かれるように、選択的である、方法。
- 基板上の特徴の側壁から不要な材料を横方向にエッチングするための装置であって、
下部チャンバ領域および上部チャンバ領域を備える反応チャンバと、
前記上部チャンバ領域から前記下部チャンバ領域を分離するガス分配機器と、
前記上部チャンバ領域内に誘導結合プラズマを発生させる誘導結合プラズマ源と、
前記下部チャンバ領域内に容量結合プラズマを発生させる容量結合プラズマ源と、
前記上部チャンバ領域に気相反応物を供給するための第1の入口と、
前記下部チャンバ領域に気相反応物を供給するための第2の入口と、
前記下部チャンバ領域から気相材料を取り除くための出口と、
コントローラと
を備え、前記コントローラは、
(a)前記基板が前記下部チャンバ領域内に配置される間、前記上部チャンバ領域内にエッチング反応物を備える誘導結合エッチングプラズマを発生させることによりエッチング操作を実行し、前記エッチング操作は、前記特徴の前記側壁の一部分から前記不要な材料を横方向にエッチングし、
(b)前記基板が前記下部チャンバ領域内に配置される間、前記下部チャンバ領域内に堆積反応物を備える容量結合堆積プラズマを発生させることにより堆積操作を実行し、前記堆積操作は、前記特徴の前記側壁の第2の部分の全域にわたって保護フィルムを形成し、前記保護フィルムは、前記側壁の最上部の近くで最も厚く、かつ前記側壁の最下部まで延伸しないように非共形であり、
(c)前記不要な材料が前記特徴の前記側壁全体に沿って横方向にエッチングされるまで、前記(a)の前記エッチング操作および前記(b)の前記堆積操作を反復し、前記(a)の異なる反復は、前記特徴の前記側壁の異なる部分から前記不要な材料を横方向にエッチングし、前記(b)の異なる反復は、前記特徴の前記側壁の異なる第2の部分の全域にわたって前記保護フィルムを堆積させ、前記(a)における前記エッチング操作の少なくとも1つの反復の間、横方向にエッチングされる前記側壁の前記部分は、前記(b)の先行する反復で堆積させられた前記保護フィルムにより覆われる前記側壁の前記第2の部分の真下にある、装置。
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PCT/US2018/043967 WO2019027811A1 (en) | 2017-08-02 | 2018-07-26 | SELECTIVE HIGH ASPECT RATIO LATERAL ENGRAVING USING CYCLIC PASSIVATION AND CYCLIC ENGRAVING |
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US20190043732A1 (en) | 2019-02-07 |
WO2019027811A1 (en) | 2019-02-07 |
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