JP7156170B2 - 半導体装置とその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 283
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000000758 substrate Substances 0.000 claims description 54
- 239000012535 impurity Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 33
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 230000004913 activation Effects 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 2
- 210000000746 body region Anatomy 0.000 description 52
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 229920005591 polysilicon Polymers 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
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- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
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- 239000012528 membrane Substances 0.000 description 1
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- 150000004706 metal oxides Chemical class 0.000 description 1
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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Description
図1に示されるように、第1実施形態の半導体装置1は、縦型のMOSFET(Metal Oxide Semiconductor Field Effect Transistor)であり、半導体基板10、半導体基板10の裏面10Aを被覆するように設けられているドレイン電極22、半導体基板10の表面10Bの一部に設けられているソース電極24、及び、半導体基板10の表面10Bの一部に設けられているトレンチゲート部30を備えている。半導体基板10の材質は、シリコンである。この例に代えて、半導体基板10の材質は、例えば窒化物半導体、炭化珪素又は酸化ガリウムであってもよい。半導体基板10は、n+型のドレイン領域11、n-型のドリフト領域12、p型のボディ領域13、n+型のソース領域14、n+型の高濃度半導体領域15、n-型の低濃度半導体領域16及びp型のSJ用半導体領域17を有している。
図16に示されるように、第2実施形態の半導体装置2は、下部電極32bとゲート電極34bが接触しており、下部電極32bとゲート電極34bが電気的に接続されていることを特徴としている。下部電極32bがゲート電極34bに電気的に接続されていると、半導体装置2がオンしたときに、下部電極32bが対向するドリフト領域12において、キャリアの蓄積効果が発揮される。これにより、半導体装置2のオン抵抗が低下し、半導体装置2の定常損失が低減され得る。
Claims (9)
- 半導体基板と、
前記半導体基板の一方の主面に形成されたゲート用トレンチ内に設けられているトレンチゲート部と、
前記半導体基板の前記一方の主面に形成されたコンタクト用トレンチ内に設けられている表面電極と、を備えており、
前記半導体基板は、
前記トレンチゲート部の底面及び側面に接する第1導電型の第1半導体領域と、
前記第1半導体領域上に設けられており、前記トレンチゲート部の前記側面に接しており、前記表面電極に接している第2導電型の第2半導体領域と、
前記第2半導体領域上に設けられており、前記半導体基板の前記一方の主面に露出する位置に配置されており、前記トレンチゲート部の前記側面に接しており、前記表面電極に接している第1導電型の第3半導体領域と、
前記コンタクト用トレンチの下方であって、前記第1半導体領域と前記第2半導体領域の間に設けられており、前記第1半導体領域よりも第1導電型のキャリア濃度が高い高濃度半導体領域と、
前記コンタクト用トレンチの下方であって、前記第1半導体領域に囲まれる位置に設けられている第2導電型のSJ用半導体領域と、を有しており、
前記トレンチゲート部は、
前記第1半導体領域と前記第3半導体領域を隔てる位置にある前記第2半導体領域にゲート絶縁膜を介して対向するゲート電極と、
前記ゲート電極下に設けられており、前記ゲート絶縁膜よりも膜厚の大きい底部絶縁膜と、を有している、半導体装置。 - 前記トレンチゲート部はさらに、
前記ゲート電極下に設けられており、前記底部絶縁膜を介して前記第1半導体領域に対向する下部電極、を有している、請求項1に記載の半導体装置。 - 前記下部電極が前記ゲート電極に電気的に接続されている、請求項2に記載の半導体装置。
- 前記半導体基板はさらに、
前記コンタクト用トレンチの下方であって、前記SJ用半導体領域と前記高濃度半導体領域の間に設けられており、前記第1半導体領域よりも第1導電型のキャリア濃度が低い低濃度半導体領域、を有している、請求項1~3のいずれか一項に記載の半導体装置。 - 第1導電型の第1半導体領域上に第2導電型の第2半導体領域が設けられた半導体基板を形成する工程であって、第1導電型の前記半導体基板の一方の主面に第2導電型の不純物を導入し、前記第1半導体領域上に前記第2半導体領域を形成する、第2半導体領域工程と、
前記半導体基板の前記一方の主面から前記第2半導体領域を貫通して前記第1半導体領域に達するゲート用トレンチを形成するゲート用トレンチ形成工程と、
熱酸化技術を利用して、前記ゲート用トレンチの底部に底部絶縁膜を成膜する底部絶縁膜成膜工程と、
前記底部絶縁膜上の前記ゲート用トレンチの側面に前記底部絶縁膜よりも膜厚が薄いゲート絶縁膜を成膜するゲート絶縁膜成膜工程と、
前記ゲート用トレンチ内に前記ゲート絶縁膜を介して前記半導体基板に対向するゲート電極を形成するゲート電極形成工程と、
前記半導体基板の前記一方の主面に第1導電型の不純物を導入し、前記第2半導体領域上に第1導電型の第3半導体領域を形成する第3半導体領域形成工程と、
前記半導体基板の前記一方の主面から前記第3半導体領域を貫通して前記第2半導体領域に達するコンタクト用トレンチを形成するコンタクト用トレンチ形成工程と、
前記コンタクト用トレンチを介して第1導電型の不純物を導入し、前記第1半導体領域と前記第2半導体領域の間に第1導電型の高濃度半導体領域を形成する高濃度半導体領域形成工程と、
アニール処理によって前記高濃度半導体領域を活性化させる活性化工程と、を備えている、半導体装置の製造方法。 - 前記ゲート用トレンチ内の前記ゲート電極下に下部電極を形成する工程であって、前記下部電極は前記底部絶縁膜を介して前記第1半導体領域に対向する、下部電極形成工程、をさらに備えている、請求項5に記載の半導体装置の製造方法。
- 前記下部電極が前記ゲート電極に電気的に接続されている、請求項6に記載の半導体装置の製造方法。
- 前記コンタクト用トレンチを介して第2導電型の不純物を導入し、前記第1半導体領域に囲まれる位置に第2導電型のSJ用半導体領域を形成するSJ用半導体領域形成工程、をさらに備えている、請求項5~7のいずれか一項に記載の半導体装置の製造方法。
- 前記コンタクト用トレンチを介して第2導電型の不純物を導入し、前記SJ用半導体領域と前記高濃度半導体領域の間に前記第1半導体領域よりも第1導電型のキャリア濃度が低い第1導電型の低濃度半導体領域を形成する低濃度半導体領域形成工程、をさらに備えている、請求項8に記載の半導体装置の製造方法。
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JP2007294759A (ja) | 2006-04-26 | 2007-11-08 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP2008108962A (ja) | 2006-10-26 | 2008-05-08 | Toshiba Corp | 半導体装置 |
JP2016072482A (ja) | 2014-09-30 | 2016-05-09 | 株式会社東芝 | 半導体装置およびその製造方法 |
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JP2007294759A (ja) | 2006-04-26 | 2007-11-08 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP2008108962A (ja) | 2006-10-26 | 2008-05-08 | Toshiba Corp | 半導体装置 |
JP2016072482A (ja) | 2014-09-30 | 2016-05-09 | 株式会社東芝 | 半導体装置およびその製造方法 |
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