JP7142236B2 - 素子チップの製造方法 - Google Patents
素子チップの製造方法 Download PDFInfo
- Publication number
- JP7142236B2 JP7142236B2 JP2018061672A JP2018061672A JP7142236B2 JP 7142236 B2 JP7142236 B2 JP 7142236B2 JP 2018061672 A JP2018061672 A JP 2018061672A JP 2018061672 A JP2018061672 A JP 2018061672A JP 7142236 B2 JP7142236 B2 JP 7142236B2
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- Prior art keywords
- laser beam
- ablation
- semiconductor layer
- irradiation
- region
- Prior art date
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Description
本実施形態に係る製造方法を、図面を参照しながら説明する。図1は、第1実施形態に係る製造方法の一部の工程を示すフローチャートである。図2は、本実施形態の加工対象物である基板を模式的に示す上面図(a)、および、X-X線における断面図(b)である。図3は、基板の要部を拡大して模式的に示す上面図(a)、および、Y-Y線における断面図(b)である。図3(a)では、便宜的に、樹脂層103にドットを付している。
まず、ダイシングの対象となる基板10を準備する。基板10は、第1主面10Xおよび第2主面10Yを備えており、半導体層101と、半導体層101の第1主面10X側に形成された配線層102と、配線層102の第1主面10X側に形成された樹脂層103と、を備える。また、基板10は、分割領域110を備えている。分割領域110は、素子領域120を画定する。
レーザグルービング工程では、分割領域110に第1主面10X側からレーザ光を照射して、分割領域110に対応する、基板10の厚みよりも浅い複数のトレンチ111(図4(c)参照)を形成する。レーザグルービング工程は、ハンドリング性の観点から、基板10を、後述する搬送キャリア20(図9参照)で支持した状態で行ってもよい。
第1工程では、分割領域110における樹脂層103にアブレーションレーザ光Laを照射して、樹脂層103および配線層102をアブレーションして、半導体層101を露出させる。
第2工程では、分割領域110に露出した半導体層101に溶融レーザ光Lmを照射して、半導体層101の表面を溶融し、分割領域110を平坦化する。
準備された基板(図4(a))の分割領域110における樹脂層103に、アブレーションレーザ光Laを照射する。第1工程では、分割領域110の樹脂層103および配線層102のほぼすべてが除去される。そのため、形成されるトレンチ111の底面全体に、半導体層101が露出する。
分割領域110に露出した半導体層101に溶融レーザ光Lmを照射して、半導体層101の表面を溶融させる。
レーザ加工機300は、例えば、レーザ発振器301、コリメータレンズ302、マスク303、ベンドミラー304および集光レンズ305を備える。レーザ発振器301から出力されたレーザ光Lは、コリメータレンズ302に入射する。コリメータレンズ302は、レーザ光Lのビーム径を、マスク303に対応した適正値に調整する。コリメータレンズ302から出射したレーザ光Lは、マスク303に入射する。マスク303は、レーザ光Lのビーム径を、基板10に設けられた分割領域110の幅に対応するように整形する。マスク303を出射したレーザ光Lは、ベンドミラー304で反射された後、集光レンズ305に入射し、その後、基板10に照射される。
レーザグルービング工程の後、個片化工程の前に、トレンチ111に残存するデブリを除去するためのクリーニング工程を行ってもよい。これにより、さらに安定化したプラズマ処理を行うことが可能になる。
クリーニングレーザ光の照射は、トレンチ111に残存するデブリが除去されるビーム強度で行われる。通常、クリーニングレーザ光のビーム強度Icは、溶融レーザ光Lmのビーム強度Imよりも高い。例えば、クリーニングレーザ光のビーム強度Icは、配線層102をアブレーションするために必要なビーム強度の閾値TBと同程度である。この場合、クリーニングレーザ光の照射ピッチをレーザグルービング工程におけるレーザ光の照射ピッチよりも大きく(すなわちスキャン速度を速く)する方が、クリーニング効果が高まり、好ましい。
形成されたトレンチ111をプラズマに晒すことにより、分割領域110における基板10の厚み方向の残部をエッチングして、基板10を、素子領域120を備える複数の素子チップ30に分割する。このとき、基板10の最外に配置されている樹脂層103は、素子領域120のマスクとして機能する。
本実施形態は、レーザグルービング工程の第1工程が、樹脂層をアブレーションする第1のアブレーション工程と、配線層をアブレーションする第2のアブレーション工程を含むこと以外、第1実施形態と同様である。図11は、本実施形態に係る製造方法の一部の工程を示すフローチャートである。図12は、本実施形態に係るレーザグルービング工程における基板の一部を模式的に示す断面図である。
準備された基板(図12(a))の分割領域110における樹脂層103に、第1のアブレーションレーザ光La1を照射して、配線層102を露出させる。
分割領域110に露出した配線層102に第2のアブレーションレーザ光La2を照射して、半導体層101を露出させる。第2のアブレーション工程では、分割領域110の配線層102のほぼすべてが除去される。そのため、形成されるトレンチ111の底面全体に、半導体層101が露出する。
分割領域110に露出した半導体層101に溶融レーザ光Lmを照射して、半導体層101の表面を溶融させる。
本実施形態では、レーザグルービング工程において、第1のアブレーション工程の後、第2のアブレーション工程と第2工程との組み合わせを、複数回繰り返すこと以外、第2実施形態と同様である。図13は、本実施形態に係る製造方法の一部の工程を示すフローチャートである。本実施形態によれば、第2のアブレーション工程により形成されたトレンチ111の前駆体の底面を平坦化し、かつ、その側面の垂直性を向上させながら、配線層を除去することができる。よって、効率的に、トレンチの形状を一定にすることができる。
本実施形態では、第2工程において、溶融レーザ光Lmの照射が複数回(Nm≧2)行われる。複数回の溶融レーザ光Lmの照射は、分割領域110の幅方向に互いに距離をあけて設定され、かつ、分割領域110の長さ方向に延びる複数の照射予定線に沿って行われる。本実施形態は、上記の点以外、第2実施形態と同様である。図14は、本実施形態に係る第2工程における基板の一部を模式的に示す上面図である。
10X:第1主面
10Y:第2主面
101:半導体層
102:配線層
102a:low-k材料
102b:金属配線
102c:バンプ
103:樹脂層
104:金属材料
110:分割領域
110a:金属含有領域
110b:金属非含有領域
111:トレンチ
120:素子領域
20:搬送キャリア
21:フレーム
21a:ノッチ
21b:コーナーカット
22:支持部材
22a:粘着面
22b:非粘着面
30:素子チップ
200:プラズマ処理装置
203:真空チャンバ
203a:ガス導入口
203b:排気口
207:押さえ部材
208:誘電体部材
209:アンテナ
210A:第1高周波電源
210B:第2高周波電源
211:ステージ
212:プロセスガス源
213:アッシングガス源
214:減圧機構
215:電極層
216:金属層
217:基台
218:外周部
219:ESC電極
220:高周波電極部
221:昇降ロッド
222:支持部
223A、223B:昇降機構
224:カバー
224W:窓部
225:冷媒循環装置
226:直流電源
227:冷媒流路
228:制御装置
229:外周リング
300:レーザ加工機
301:レーザ発振器
302:コリメータレンズ
303:マスク
304:ベンドミラー
305:集光レンズ
Claims (9)
- 第1主面および第2主面を備え、半導体層と、前記半導体層の前記第1主面側に形成された配線層と、前記配線層の前記第1主面側に形成された樹脂層と、を備える基板であって、複数の素子領域と、前記素子領域を画定する分割領域と、を備える基板を準備する工程と、
前記分割領域に、前記第1主面側からレーザ光を照射して、前記分割領域に前記半導体層が露出する開口を形成するレーザグルービング工程と、
前記レーザグルービング工程の後、前記開口に露出する前記半導体層をプラズマにより前記第2主面に達するまでエッチングして、前記基板を、前記素子領域を備える複数の素子チップに分割する個片化工程と、を備え、
前記レーザグルービング工程は、第1工程と第2工程とを備え、
前記第1工程では、前記分割領域にアブレーションレーザ光を照射し、前記樹脂層および前記配線層をアブレーションして、前記半導体層を露出させ、
前記第2工程では、前記分割領域に露出した前記半導体層に溶融レーザ光を照射して、前記半導体層の表面を溶融させ、
前記溶融レーザ光の前記分割領域の幅方向におけるビーム幅が、前記分割領域の幅よりも小さく、
前記第2工程では、複数回の前記溶融レーザ光の照射が、前記分割領域の幅方向に互いに距離をあけて設定され、かつ、前記分割領域の長さ方向に延びる3以上の照射予定線に沿って行われ、
隣接する前記照射予定線間の前記距離は、前記ビーム幅よりも小さく、
前記分割領域の幅方向の一方の端部に最も近い前記照射予定線に沿った照射が、最後に行われる、 素子チップの製造方法。 - 前記樹脂層をアブレーションするために必要なビーム強度の閾値をTA、
前記配線層をアブレーションするために必要なビーム強度の閾値をTB、
前記半導体層を溶融するために必要なビーム強度の閾値をTC、および、
前記半導体層をアブレーションするために必要なビーム強度の閾値をTD、としたとき、
TB>TD>TC>TAの関係を満たし、
前記アブレーションレーザ光のビーム強度Iaと前記溶融レーザ光のビーム強度Imとは、
Ia>Im、および、TD>Im≧TCの関係を満たす、請求項1に記載の素子チップの製造方法。 - 前記溶融レーザ光の前記分割領域の幅方向におけるビームプロファイルが、トップハット分布である、請求項1または2に記載の素子チップの製造方法。
- 前記溶融レーザ光の前記分割領域の幅方向における照射幅が、前記アブレーションレーザ光の前記分割領域の幅方向における照射幅よりも広い、請求項1~3のいずれか一項に記載の素子チップの製造方法。
- 前記第1工程は、第1のアブレーション工程と、第2のアブレーション工程と、を備え、
前記アブレーションレーザ光として、第1のアブレーションレーザ光および第2のアブレーションレーザ光を用い、
前記第1のアブレーション工程では、前記分割領域における前記樹脂層に前記第1のアブレーションレーザ光を照射して、前記配線層を露出させ、
前記第2のアブレーション工程では、前記分割領域に露出した前記配線層に前記第2のアブレーションレーザ光を照射して、前記半導体層を露出させる、請求項1に記載の素子チップの製造方法。 - 前記樹脂層をアブレーションするために必要なビーム強度の閾値をTA、
前記配線層をアブレーションするために必要なビーム強度の閾値をTB、
前記半導体層を溶融するために必要なビーム強度の閾値をTC、および、
前記半導体層をアブレーションするために必要なビーム強度の閾値をTD、としたとき、
TB>TD>TC>TAの関係を満たし、
前記第1のアブレーションレーザ光のビーム強度Ia1、前記第2のアブレーションレーザ光のビーム強度Ia2および前記溶融レーザ光のビーム強度Imは、
Ia2>Im>Ia1、および、TD>Im≧TCの関係を満たす、請求項5に記載の素子チップの製造方法。 - 前記レーザグルービング工程において、前記第1のアブレーション工程の後、前記第2のアブレーション工程と前記第2工程との組み合わせを、複数回繰り返す、請求項5または6に記載の素子チップの製造方法。
- 前記溶融レーザ光の前記分割領域の幅方向におけるビームプロファイルが、トップハット分布である、請求項5~7のいずれか一項に記載の素子チップの製造方法。
- 前記溶融レーザ光の前記分割領域の幅方向における照射幅が、前記第2のアブレーションレーザ光の前記分割領域の幅方向における照射幅よりも広い、請求項5~8のいずれか一項に記載の素子チップの製造方法。
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