JP7116669B2 - 光酸発生剤及びフォトリソグラフィー用樹脂組成物 - Google Patents

光酸発生剤及びフォトリソグラフィー用樹脂組成物 Download PDF

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Publication number
JP7116669B2
JP7116669B2 JP2018219017A JP2018219017A JP7116669B2 JP 7116669 B2 JP7116669 B2 JP 7116669B2 JP 2018219017 A JP2018219017 A JP 2018219017A JP 2018219017 A JP2018219017 A JP 2018219017A JP 7116669 B2 JP7116669 B2 JP 7116669B2
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Japan
Prior art keywords
group
photoacid generator
acid
groups
resin
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JP2018219017A
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English (en)
Japanese (ja)
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JP2020086083A (ja
Inventor
智幸 柴垣
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San Apro KK
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San Apro KK
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Publication date
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Priority to JP2018219017A priority Critical patent/JP7116669B2/ja
Priority to CN201980067796.3A priority patent/CN112888676A/zh
Priority to PCT/JP2019/041871 priority patent/WO2020105364A1/ja
Priority to KR1020217003627A priority patent/KR20210092713A/ko
Priority to TW108141053A priority patent/TWI788602B/zh
Publication of JP2020086083A publication Critical patent/JP2020086083A/ja
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Publication of JP7116669B2 publication Critical patent/JP7116669B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G03F7/0295—Photolytic halogen compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D221/00—Heterocyclic compounds containing six-membered rings having one nitrogen atom as the only ring hetero atom, not provided for by groups C07D211/00 - C07D219/00
    • C07D221/02—Heterocyclic compounds containing six-membered rings having one nitrogen atom as the only ring hetero atom, not provided for by groups C07D211/00 - C07D219/00 condensed with carbocyclic rings or ring systems
    • C07D221/04—Ortho- or peri-condensed ring systems
    • C07D221/06—Ring systems of three rings
    • C07D221/14—Aza-phenalenes, e.g. 1,8-naphthalimide

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Other In-Based Heterocyclic Compounds (AREA)
JP2018219017A 2018-11-22 2018-11-22 光酸発生剤及びフォトリソグラフィー用樹脂組成物 Active JP7116669B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018219017A JP7116669B2 (ja) 2018-11-22 2018-11-22 光酸発生剤及びフォトリソグラフィー用樹脂組成物
CN201980067796.3A CN112888676A (zh) 2018-11-22 2019-10-25 光酸产生剂和光刻用树脂组合物
PCT/JP2019/041871 WO2020105364A1 (ja) 2018-11-22 2019-10-25 光酸発生剤及びフォトリソグラフィー用樹脂組成物
KR1020217003627A KR20210092713A (ko) 2018-11-22 2019-10-25 광산 발생제 및 포토리소그래피용 수지 조성물
TW108141053A TWI788602B (zh) 2018-11-22 2019-11-12 光酸產生劑及光微影用樹脂組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018219017A JP7116669B2 (ja) 2018-11-22 2018-11-22 光酸発生剤及びフォトリソグラフィー用樹脂組成物

Publications (2)

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JP2020086083A JP2020086083A (ja) 2020-06-04
JP7116669B2 true JP7116669B2 (ja) 2022-08-10

Family

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JP2018219017A Active JP7116669B2 (ja) 2018-11-22 2018-11-22 光酸発生剤及びフォトリソグラフィー用樹脂組成物

Country Status (5)

Country Link
JP (1) JP7116669B2 (ko)
KR (1) KR20210092713A (ko)
CN (1) CN112888676A (ko)
TW (1) TWI788602B (ko)
WO (1) WO2020105364A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112094232B (zh) * 2020-09-18 2022-04-08 河北凯力昂生物科技有限公司 一种n-羟基萘酰亚胺甲磺酸酯的合成方法
CN116406453A (zh) * 2020-10-13 2023-07-07 日本瑞翁株式会社 放射线敏感性树脂组合物
WO2023162552A1 (ja) * 2022-02-24 2023-08-31 東京応化工業株式会社 化学増幅型ポジ型感光性組成物、鋳型付き基板の製造方法、及びめっき造形物の製造方法
WO2024100964A1 (ja) * 2022-11-09 2024-05-16 サンアプロ株式会社 有機金属化合物、スルホニウム塩型化合物、ノニオンオキシム型化合物、感光材、酸発生剤、及びフォトレジスト

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016043558A1 (en) 2014-09-18 2016-03-24 Heraeus Materials Korea Corporation Photo-acid generating agent
JP2017037300A (ja) 2015-08-06 2017-02-16 東京応化工業株式会社 感光性組成物
JP2017535595A (ja) 2014-09-18 2017-11-30 ヘレウス プレシャス メタルズ ノース アメリカ デイケム エルエルシー レジスト用途における光酸発生剤としてのスルホン酸誘導体化合物
JP2018091939A (ja) 2016-11-30 2018-06-14 株式会社Adeka ネガ型感光性組成物、その硬化物およびその硬化方法
WO2018110399A1 (ja) 2016-12-12 2018-06-21 サンアプロ株式会社 光酸発生剤及びフォトリソグラフィー用樹脂組成物
JP2018112670A (ja) 2017-01-12 2018-07-19 サンアプロ株式会社 光酸発生剤及びフォトリソグラフィー用樹脂組成物
JP2018523640A (ja) 2015-08-21 2018-08-23 ヘレウス プレシャス メタルズ ノース アメリカ デイケム エルエルシー レジスト塗布における光酸発生剤としてのスルホン酸誘導体化合物

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Publication number Priority date Publication date Assignee Title
GB1516512A (en) 1974-05-02 1978-07-05 Gen Electric Chalcogenium salts
JP3024621B2 (ja) 1990-01-30 2000-03-21 和光純薬工業株式会社 レジスト材料用酸発生剤
EP0571330B1 (de) 1992-05-22 1999-04-07 Ciba SC Holding AG Hochauflösender I-Linien Photoresist mit höherer Empfindlichkeit
JPH09118663A (ja) 1995-08-22 1997-05-06 Nippon Soda Co Ltd 新規スルホニウム塩化合物、重合開始剤、該化合物を含有する硬化性組成物および硬化方法
WO2011087011A1 (ja) * 2010-01-13 2011-07-21 株式会社Adeka 新規スルホン酸誘導体化合物及び新規ナフタル酸誘導体化合物
WO2015001804A1 (ja) * 2013-07-05 2015-01-08 サンアプロ株式会社 光酸発生剤及びフォトリソグラフィー用樹脂組成物
DE102015100249A1 (de) * 2015-01-09 2016-07-14 Kraussmaffei Technologies Gmbh Schüttgut-Dosiervorrichtung und Extrusionsvorrichtung mit einer solchen Schüttgut-Dosiervorrichtung
JP6896404B2 (ja) * 2016-11-30 2021-06-30 キヤノン株式会社 露光装置及び物品の製造方法
JP7022006B2 (ja) * 2018-05-10 2022-02-17 サンアプロ株式会社 光酸発生剤及びフォトリソグラフィー用樹脂組成物

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016043558A1 (en) 2014-09-18 2016-03-24 Heraeus Materials Korea Corporation Photo-acid generating agent
JP2017535595A (ja) 2014-09-18 2017-11-30 ヘレウス プレシャス メタルズ ノース アメリカ デイケム エルエルシー レジスト用途における光酸発生剤としてのスルホン酸誘導体化合物
JP2017037300A (ja) 2015-08-06 2017-02-16 東京応化工業株式会社 感光性組成物
JP2018523640A (ja) 2015-08-21 2018-08-23 ヘレウス プレシャス メタルズ ノース アメリカ デイケム エルエルシー レジスト塗布における光酸発生剤としてのスルホン酸誘導体化合物
JP2018091939A (ja) 2016-11-30 2018-06-14 株式会社Adeka ネガ型感光性組成物、その硬化物およびその硬化方法
WO2018110399A1 (ja) 2016-12-12 2018-06-21 サンアプロ株式会社 光酸発生剤及びフォトリソグラフィー用樹脂組成物
JP2018112670A (ja) 2017-01-12 2018-07-19 サンアプロ株式会社 光酸発生剤及びフォトリソグラフィー用樹脂組成物

Also Published As

Publication number Publication date
TW202030183A (zh) 2020-08-16
JP2020086083A (ja) 2020-06-04
CN112888676A (zh) 2021-06-01
KR20210092713A (ko) 2021-07-26
WO2020105364A1 (ja) 2020-05-28
TWI788602B (zh) 2023-01-01

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