JP7098273B2 - ユニバーサルプロセスキット - Google Patents
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- JP7098273B2 JP7098273B2 JP2017023919A JP2017023919A JP7098273B2 JP 7098273 B2 JP7098273 B2 JP 7098273B2 JP 2017023919 A JP2017023919 A JP 2017023919A JP 2017023919 A JP2017023919 A JP 2017023919A JP 7098273 B2 JP7098273 B2 JP 7098273B2
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Description
本開示の実施形態は、概して、半導体処理に関し、より具体的には、半導体処理チャンバ内で使用されるプロセスキットに関する。
様々な半導体製造プロセス(例えば、プラズマ援用エッチング又は化学気相堆積)は、プラズマ処理チャンバ内で実行される。基板支持体は、半導体処理チャンバ内の処理位置で基板を支持する。1以上の処理ガスを含むプラズマ領域が半導体処理チャンバ内で維持され、基板支持体上に配置された基板上で半導体製造プロセスを実行する。
d=(2/3)(ε/i)1/2(2e/m)1/4(VP-VDC)3/4
(数式1)
(処理チャンバの概略説明)
(ユニバーサルプロセスキット)
Claims (15)
- 半導体処理チャンバ内での使用に適したプロセスキットであって、
エッジリングであって、
内側リングであって、
第2面に対向する第1面を有する非金属導電体を含み、内部リングの第2面は、少なくとも部分的に内部に穿孔された少なくとも1つのスロットを含み、少なくとも1つの熱接触パッドはスロット内に収容され、少なくとも1つの熱接触パッドはシリコーン材料を含み、非金属導電体は50オーム・cm未満の抵抗率を有し、内側リングは内側リングの内径に沿って配置されたノッチを含み、ノッチは、1200μm未満立ち上がる鉛直成分と、1300μm~2500μmの間で延びる水平成分とを有し、スロットはノッチの鉛直成分と非金属導電体の外壁の間に放射状に配置されており、少なくとも1つの熱接触パッドはスロットの深さより大きい高さを有する内側リングと、
内側リングに結合され、内側リングの周囲を囲む外側リングであって、
第4面に対向する第3面を有する石英本体を含み、
導電性部材を収容するために第4面に形成されたチャネルを有する外側リングとを含むエッジリングを含むプロセスキット。 - 第2の熱接触パッド、第3の熱接触パッド、及び第4の熱接触パッドをさらに含み、各熱接触パッドは、内側リングに形成されたスロット内に配置されている、請求項1記載のプロセスキット。
- 内側リングは、炭化ケイ素材料、シリコン材料、又はそれらの組み合わせを含んでいる、請求項2記載のプロセスキット。
- 少なくとも1つの熱接触パッドは、非連続的なリング形状を有する、請求項2記載のプロセスキット。
- チャネル内に少なくとも部分的に配置された前記導電性部材をさらに備えている、請求項1記載のプロセスキット。
- 外側リングは、外側リングの内周に沿って形成された支持棚を有し、
少なくとも1つのスロットは、ノッチと支持棚との間に半径方向に配置されている、請求項5記載のプロセスキット。 - 処理チャンバ内での使用に適したプロセスキットであって、
処理チャンバ内に配置された基板支持アセンブリの周囲を囲むエッジリングであって、
基板支持アセンブリに隣接して配置された内側リングであって、内側リングは、非金属導電性材料と、内側リングの内径に沿って配置されたノッチとを含み、ノッチは、1200μm未満立ち上がる鉛直成分と、1300μm~2500μmの間で延びる水平成分とを有する内側リングと、
内側リングに結合され、内側リングの周囲を囲む外側リングであって、石英材料を含む外側リングとを含むエッジリングと、
内側リングに結合され、内側リング内に形成されたスロット内に配置された少なくとも1つの熱接触パッドであって、スロットはノッチの鉛直成分と内側リングの外径の間に放射状に配置されており、少なくとも1つの熱接触パッドはスロットの深さより大きい高さを有する熱接触パッドと、
外側リングに結合された導電性部材であって、エッジリングに形成されたチャネル内に少なくとも部分的に配置された導電性部材とを含むプロセスキット。 - 少なくとも1つの熱接触パッドはシリコーン材料を含む、請求項7記載のプロセスキット。
- 内側リングは50オーム・cm未満の抵抗率を有する、請求項7記載のプロセスキット。
- 第2の熱接触パッド、第3の熱接触パッド、及び第4の熱接触パッドを含み、各熱接触パッドは、エッジリング内に形成されたスロット内に配置される、請求項7記載のプロセスキット。
- 基板上に半導体プロセスを実行するためのプラズマチャンバであって、
基板支持アセンブリと、
基板支持アセンブリに隣接して使用するのに適し、基板支持アセンブリのフランジに結合されたプロセスキットであって、
エッジリングの内径に沿って配置されたノッチを含むエッジリングであって、ノッチは、1200μm未満立ち上がる鉛直成分と、1300μm~2500μmの間で延びる水平成分とを有し、エッジリングは、
基板支持アセンブリに隣接して配置された内側リングであって、非金属の導電性材料と、ノッチの鉛直成分と内側リングの外径の間に放射状に配置されたスロットを含む内側リングと、
内側リングに結合され、内側リングの周囲を囲む外側リングであって、石英材料を含む外側リングと、
外側リングに結合された導電性部材であって、外側リングに形成されたチャネル内に少なくとも部分的に配置された導電性部材とを含むプロセスキットとを含むプラズマチャンバ。 - 内側リング内に形成されたスロット内に配置された少なくとも1つの熱接触パッドを含み、少なくとも1つの熱接触パッドはスロットの深さより大きい高さを有する、請求項11記載のプラズマチャンバ。
- 第2の熱接触パッド、第3の熱接触パッド、及び第4の熱接触パッドを含み、各熱接触パッドは、エッジリング内に形成されたスロット内に配置される、請求項12記載のプラズマチャンバ。
- 外側リングは、外側リングの内周に沿って形成された支持棚を有している、請求項12記載のプラズマチャンバ。
- スロットは、ノッチと支持棚との間に半径方向に配置されている、請求項14記載のプラズマチャンバ。
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US (1) | US11049760B2 (ja) |
JP (3) | JP7098273B2 (ja) |
KR (1) | KR102415847B1 (ja) |
CN (3) | CN206877967U (ja) |
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JP7098273B2 (ja) * | 2016-03-04 | 2022-07-11 | アプライド マテリアルズ インコーポレイテッド | ユニバーサルプロセスキット |
US20190287835A1 (en) * | 2018-02-01 | 2019-09-19 | Yield Engineering Systems, Inc. | Interchangeable Edge Rings For Stabilizing Wafer Placement And System Using Same |
JP7061889B2 (ja) * | 2018-02-15 | 2022-05-02 | 東京エレクトロン株式会社 | 被処理体の載置装置及び処理装置 |
CN110468383B (zh) * | 2018-05-11 | 2022-04-22 | 北京北方华创微电子装备有限公司 | 工艺套件及反应腔室 |
JP7333712B2 (ja) * | 2019-06-05 | 2023-08-25 | 東京エレクトロン株式会社 | 静電チャック、支持台及びプラズマ処理装置 |
KR20220038172A (ko) * | 2019-08-05 | 2022-03-25 | 램 리써치 코포레이션 | 기판 프로세싱 시스템들을 위한 에지 링 시스템들 |
KR102077975B1 (ko) * | 2019-10-15 | 2020-02-14 | 주식회사 기가레인 | 플라즈마 처리 수직도가 향상된 플라즈마 처리 장치 |
US20210285101A1 (en) * | 2020-03-12 | 2021-09-16 | Applied Materials, Inc. | Methods and apparatus for conductance liners in semiconductor process chambers |
JP7441711B2 (ja) | 2020-04-13 | 2024-03-01 | 東京エレクトロン株式会社 | 基板支持台、プラズマ処理システム及びエッジリングの載置方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001516948A (ja) | 1997-09-16 | 2001-10-02 | アプライド マテリアルズ インコーポレイテッド | プラズマチャンバの半導体ワークピースを取り囲むシールド又はリング |
JP2008244096A (ja) | 2007-03-27 | 2008-10-09 | Tokyo Electron Ltd | 熱伝導シート及びこれを用いた被処理基板の載置装置 |
JP2010016363A (ja) | 2008-07-02 | 2010-01-21 | Ngk Insulators Ltd | ウエハ載置装置及びそれに用いる部品 |
JP2010251723A (ja) | 2009-03-27 | 2010-11-04 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法 |
JP2013511847A (ja) | 2009-11-20 | 2013-04-04 | アプライド マテリアルズ インコーポレイテッド | アーク放電を低減させた静電チャック |
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---|---|---|---|---|
JP3257741B2 (ja) * | 1994-03-03 | 2002-02-18 | 東京エレクトロン株式会社 | プラズマエッチング装置及び方法 |
US6284093B1 (en) | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
TW484187B (en) * | 2000-02-14 | 2002-04-21 | Tokyo Electron Ltd | Apparatus and method for plasma treatment |
US6554954B2 (en) | 2001-04-03 | 2003-04-29 | Applied Materials Inc. | Conductive collar surrounding semiconductor workpiece in plasma chamber |
US20030106646A1 (en) | 2001-12-11 | 2003-06-12 | Applied Materials, Inc. | Plasma chamber insert ring |
KR100578129B1 (ko) * | 2003-09-19 | 2006-05-10 | 삼성전자주식회사 | 플라즈마 식각 장치 |
US7338578B2 (en) | 2004-01-20 | 2008-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Step edge insert ring for etch chamber |
KR100794308B1 (ko) | 2006-05-03 | 2008-01-11 | 삼성전자주식회사 | 반도체 플라즈마 장치 |
US20090221150A1 (en) | 2008-02-29 | 2009-09-03 | Applied Materials, Inc. | Etch rate and critical dimension uniformity by selection of focus ring material |
JP5255936B2 (ja) | 2008-07-18 | 2013-08-07 | 東京エレクトロン株式会社 | フォーカスリング及び基板載置台、並びにそれらを備えたプラズマ処理装置 |
US20140034239A1 (en) | 2008-07-23 | 2014-02-06 | Applied Materials, Inc. | Differential counter electrode tuning in a plasma reactor with an rf-driven workpiece support electrode |
US20140069584A1 (en) | 2008-07-23 | 2014-03-13 | Applied Materials, Inc. | Differential counter electrode tuning in a plasma reactor with an rf-driven ceiling electrode |
US8449679B2 (en) * | 2008-08-15 | 2013-05-28 | Lam Research Corporation | Temperature controlled hot edge ring assembly |
US8287650B2 (en) | 2008-09-10 | 2012-10-16 | Applied Materials, Inc. | Low sloped edge ring for plasma processing chamber |
EP2342951B1 (en) * | 2008-10-31 | 2019-03-06 | Lam Research Corporation | Lower electrode assembly of plasma processing chamber |
JP2010278166A (ja) * | 2009-05-27 | 2010-12-09 | Tokyo Electron Ltd | プラズマ処理用円環状部品、及びプラズマ処理装置 |
SG170717A1 (en) * | 2009-11-02 | 2011-05-30 | Lam Res Corp | Hot edge ring with sloped upper surface |
WO2011094230A2 (en) | 2010-01-27 | 2011-08-04 | Applied Materials, Inc. | Life enhancement of ring assembly in semiconductor manufacturing chambers |
US8988848B2 (en) | 2011-12-15 | 2015-03-24 | Applied Materials, Inc. | Extended and independent RF powered cathode substrate for extreme edge tunability |
USD665491S1 (en) | 2012-01-25 | 2012-08-14 | Applied Materials, Inc. | Deposition chamber cover ring |
US9412579B2 (en) | 2012-04-26 | 2016-08-09 | Applied Materials, Inc. | Methods and apparatus for controlling substrate uniformity |
JP1495083S (ja) | 2013-06-14 | 2017-04-03 | ||
JP1494712S (ja) | 2013-05-15 | 2017-04-03 | ||
USD766849S1 (en) | 2013-05-15 | 2016-09-20 | Ebara Corporation | Substrate retaining ring |
US20150001180A1 (en) | 2013-06-28 | 2015-01-01 | Applied Materials, Inc. | Process kit for edge critical dimension uniformity control |
JP6261287B2 (ja) * | 2013-11-05 | 2018-01-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP7098273B2 (ja) * | 2016-03-04 | 2022-07-11 | アプライド マテリアルズ インコーポレイテッド | ユニバーサルプロセスキット |
USD797691S1 (en) * | 2016-04-14 | 2017-09-19 | Applied Materials, Inc. | Composite edge ring |
KR102581226B1 (ko) * | 2016-12-23 | 2023-09-20 | 삼성전자주식회사 | 플라즈마 처리 장치 |
-
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001516948A (ja) | 1997-09-16 | 2001-10-02 | アプライド マテリアルズ インコーポレイテッド | プラズマチャンバの半導体ワークピースを取り囲むシールド又はリング |
JP2008244096A (ja) | 2007-03-27 | 2008-10-09 | Tokyo Electron Ltd | 熱伝導シート及びこれを用いた被処理基板の載置装置 |
JP2010016363A (ja) | 2008-07-02 | 2010-01-21 | Ngk Insulators Ltd | ウエハ載置装置及びそれに用いる部品 |
JP2010251723A (ja) | 2009-03-27 | 2010-11-04 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法 |
JP2013511847A (ja) | 2009-11-20 | 2013-04-04 | アプライド マテリアルズ インコーポレイテッド | アーク放電を低減させた静電チャック |
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US11049760B2 (en) | 2021-06-29 |
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US20170256435A1 (en) | 2017-09-07 |
CN107154335A (zh) | 2017-09-12 |
TWI746406B (zh) | 2021-11-11 |
CN113013013A (zh) | 2021-06-22 |
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CN107154335B (zh) | 2021-02-09 |
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