WO2011094230A2 - Life enhancement of ring assembly in semiconductor manufacturing chambers - Google Patents

Life enhancement of ring assembly in semiconductor manufacturing chambers Download PDF

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Publication number
WO2011094230A2
WO2011094230A2 PCT/US2011/022458 US2011022458W WO2011094230A2 WO 2011094230 A2 WO2011094230 A2 WO 2011094230A2 US 2011022458 W US2011022458 W US 2011022458W WO 2011094230 A2 WO2011094230 A2 WO 2011094230A2
Authority
WO
WIPO (PCT)
Prior art keywords
ring body
outer ring
inner ring
annular extension
top surface
Prior art date
Application number
PCT/US2011/022458
Other languages
French (fr)
Other versions
WO2011094230A3 (en
Inventor
Sandhya Arun
Prashanth Kodigepalli
Padma Gopalakrishnan
Ashish Bhatnagar
Dan Martin
Christopher Heath John Hossack
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN2011900003014U priority Critical patent/CN203288565U/en
Priority to KR2020127000045U priority patent/KR200479167Y1/en
Publication of WO2011094230A2 publication Critical patent/WO2011094230A2/en
Publication of WO2011094230A3 publication Critical patent/WO2011094230A3/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32477Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495Means for protecting the vessel against plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Definitions

  • Embodiments of the present invention generally relate to a ring and ring assembly for an etching or other plasma processing chamber.
  • substrates undergo various processes such as deposition, etching and annealing. During some of the processes, the substrate is placed onto a substrate support such as an electrostatic chuck (ESC), for processing. In an etch process a ring may be placed around the substrate to prevent erosion of the areas of the substrate support that are not covered by the substrate. The ring focuses the plasma and positions the substrate in place.
  • a substrate support such as an electrostatic chuck (ESC)
  • ESC electrostatic chuck
  • a ring may be placed around the substrate to prevent erosion of the areas of the substrate support that are not covered by the substrate. The ring focuses the plasma and positions the substrate in place.
  • Rings are usually made of quartz material and are highly consumed in the etch process as they are exposed to etching gases and/or fluids.
  • the rings are etched during wafer processing and need to be replaced after a set of substrates (wafers) are processed.
  • the rings that are significantly eroded are usually replaced during wet clean.
  • Wet cleaning is a process for removing etching residues using a cleaning chemical, and some of the cleaning chemicals may remain in the chamber after chamber cleaning. Therefore, the rings may be exposed to and eroded by the cleaning chemical. Thus, significantly reducing the service life of the ring. In some situations, a ring may need to be replaced after every wet clean, which leads to wastage of expensive quartz material.
  • the present invention generally relates to a ring assembly that may be used in an etching or other plasma processing chamber.
  • a ring assembly as described herein is designed to increase the useful life of the ring as compared to conventional rings.
  • the ring assembly has at least two distinct pieces, also referred to as bodies.
  • An inner ring body will correspond to a location where the majority of erosion occurs during use.
  • the inner ring body of the ring assembly can be flipped and used again until both sides have eroded beyond their useful life.
  • the two bodies generally have the shape of a single piece ring, but service life of the ring assembly has a longer service life than a conventional single piece ring.
  • a ring assembly In one embodiment, a ring assembly is provided.
  • the ring assembly generally includes an outer ring body having a notch on an inside surface, the notch having a roof, and an inner ring body nestable in the notch of the outer ring body when either a top surface or a bottom surface of the inner ring body is disposed adjacent the roof.
  • the roof of the outer ring body partially covers the top surface of the inner ring body, and an outside diameter surface of the inner ring body conforms with the notch when either the top surface or the bottom surface is disposed against the roof.
  • a ring assembly in another embodiment, is provided.
  • the ring assembly generally includes an outer ring body, having a top surface and a bottom surface substantially parallel to the top surface, an outside surface extending between the top and bottom surfaces, an inside surface extending between the top and bottom surfaces, a notch formed on the inside surface, a first and second annular extensions extending from the bottom surface of the outer ring, wherein the first and second annular extensions are parallel and radially spaced from each other, a third annular extension extending from the outer ring in a direction perpendicular to the first and second annular extensions.
  • the ring assembly also includes an inner ring body disposed radially inward of the outer ring body.
  • the inner ring body has a top surface abutting or projecting inward of the third annular extension, and an outside diameter surface disposed below the third annular extension and abutting the outer ring.
  • the inner ring body is nested in the notch in two flipped orientations such that the third annular extension partially covers the top surface of the inner ring body.
  • the ring assembly generally includes an outer ring body having a top surface, a bottom surface substantially parallel to the top surface, an outside surface extending between the top and bottom surfaces, an inside surface extending between the top and bottom surfaces, a first annular extension extending from the bottom surface in a direction away from the top surface and from a location adjacent to an edge of the outside surface, a second annular extension extending from the bottom surface in a direction away from the top surface, the second annular extension abutting the inside surface, and a third annular extension extending from the outer ring body in a direction away from the outside surface, the third annular extension abutting the top surface.
  • the ring assembly also includes an inner ring body being surrounded by the outer ring body, wherein the inner ring body is symmetrically nestable against the outer ring body in two orientations in which the third annular extension partially covers the inner ring body.
  • the third extension radially extends a distance to partially cover an upper surface of the inner ring body.
  • a ring assembly in one embodiment, includes a first ring body having a top surface and a bottom surface substantially parallel to the top surface, and a second ring body disposed radially inward of the first ring body.
  • the first ring body has an overhang on an inside surface of the first ring body, and the second ring body is nestable in contact with the first ring body below the overhang when either a top surface or a bottom surface of the second ring body is disposed adjacent the overhang.
  • the second ring body is surrounded by the first ring body, and the second ring body can be flipped over and placed at the same location to provide a substantially planar resting surface.
  • the first ring body generally includes a top surface and a bottom surface substantially parallel to the top surface.
  • the first ring body has an outside surface extending between the top and bottom surfaces and an inside surface extending between the top and bottom surfaces.
  • the first ring body includes a first annular extension extending from the bottom surface in a direction away from the top surface and disposing at a location spaced from the edge of the outside surface, and a second annular extension extending from the bottom surface in a direction away from the top surface.
  • the first annular extension generally abuts the inside surface.
  • the first ring body may additionally include a third annular extension extending from the inside surface in a direction away from the outside surface.
  • the third annular extension generally abuts the top surface and may be angled relative to the top surface of the first ring body.
  • the third extension of the first ring body radially extends a distance to partially cover the top surface of the second ring body.
  • the top surface of the second ring body that was covered by the third extension acts as a base to the second ring body when reused by flipping over.
  • a process chamber for processing a substrate generally includes a pedestal support having a substrate receiving surface, a pedestal insulator configured to electrically isolate chamber walls of the process chamber and the pedestal support, and a ring assembly rested on the pedestal insulator and at least a portion of the substrate receiving surface.
  • the ring assembly generally includes a first ring body and a second ring body disposed radially inward of the first ring body. The second ring body is surrounded by the first ring body, and the second ring body can be flipped over and placed at the same location to provide a substantially planar resting surface for the substrate.
  • the first ring body provides first and second annular extensions extending from a bottom surface of the first ring body, wherein the first and second annular extensions are substantially parallel and radially spaced from each other, and a portion of the second annular extension is in contact with the substrate receiving surface of the pedestal support.
  • the first ring body may include a third annular extension extending from the first ring body in a direction perpendicular to the first and second annular extensions.
  • the third annular extension is configured to partially cover an upper surface of the second ring body such that the uncovered upper surface of the second ring body acts as a base to the second ring body when reused by flipping over.
  • Figure 1A is a schematic, cross sectional view of an exemplary substrate support with a conventional single piece ring disposed in a process chamber.
  • Figure 1 B is a schematic, cross sectional view of the ring of Figure 1 A.
  • Figure 1 C is a schematic illustration showing erosion profile of the ring of Figure 1 A.
  • Figure 2A is a schematic, cross sectional view of an exemplary substrate support having a ring assembly according to one embodiment of the invention.
  • Figure 2B is a schematic, cross sectional view of the ring assembly of Figure 2A.
  • Figure 3A is a schematic illustration showing erosion profile of the ring assembly according to one embodiment.
  • Figure 3B is a schematic, cross sectional view of the ring assembly after the inner ring has been flipped according to one embodiment.
  • Figure 4 is a schematic, cross sectional view showing spacing between inner and outer rings of the ring assembly according to one embodiment.
  • Figure 5A is a schematic cross sectional view of an outer ring of a ring assembly according to one embodiment.
  • Figure 5B is an enlarged view of a portion of the outer ring illustrated in Figure 5A.
  • Figure 6A is a schematic cross sectional view of the inner ring of a ring assembly according to one embodiment.
  • Figure 6B is an enlarged view of a portion of Figure 6A.
  • the present invention generally relates to a ring assembly that may be used in an etching or other plasma processing chamber.
  • the ring assembly may be made at least in two distinct pieces, for example, an inner ring body and an outer ring body which nest together.
  • the inner ring body has a geometry that allows the ring assembly to maintain a single sectional profile when the inner ring body and outer ring body are nested together, no matter which side of the inner ring body is facing the outer inner ring body.
  • the inner ring body is reusable in that if one surface becomes eroded, the inner ring body may be flipped over and used again with the outer ring body until the outer ring body and/or both sides of the inner ring body have eroded beyond their useful life.
  • the two bodies generally have the shape of a single conventional piece ring, but the service life of the ring assembly is longer than a conventional single piece ring.
  • FIG. 1A is a schematic, cross sectional view of an exemplary substrate support 100 with a conventional single piece ring 104 disposed in a process chamber 128. While not discussed here in detail, the substrate support 100 is typically disposed in a plasma processing chamber, such as an etching chamber.
  • the process chamber 128 may be utilized alone or, as a processing module of an integrated semiconductor substrate processing system, or cluster tool.
  • the substrate support 100 is disposed below a showerhead 120, which is used to supply various gases into the process chamber 128.
  • the substrate support 100 may be biased by a DC power supply (now shown).
  • An RF power source 126 may optionally be coupled to the substrate support 100 through a matching network 122.
  • the showerhead 120 may be coupled to an RF source 132 through a matching network 124.
  • the interior of the process chamber 128 is a high vacuum vessel that is coupled through a throttle valve (not shown) to a vacuum pump 134.
  • the substrate is placed on the substrate support 100 and the chamber interior is pumped down to a near vacuum environment.
  • One or more gases are introduced from the gas panel via the showerhead 120 into the process chamber 128, and ignited into a plasma in the process chamber 128 by applying the power from the RF source 132 to the showerhead 120 disposed on the substrate support 100 and/or applying RF power from the RF source 126 to the substrate support 100 while applying the power from the bias source to bias the substrate support 100.
  • the formed plasma may be used to etch a feature in a substrate during processing and then pumped out of the process chamber 128 through the vacuum pump 134. It is understood that other components of the process chamber 128 have been omitted for the sake of brevity.
  • the substrate support 100 generally includes an electrostatic chuck (ESC) 102, a conventional single piece ring 104, a cathode 106 to electrically bias the ESC 102, an insulator pipe 108, a pedestal insulator 1 10, and a pedestal support 1 12.
  • the insulator pipe 108 and the pedestal insulator 1 10 function to electrically isolate the chamber walls and the substrate support 100, respectively, from the electrical bias applied to the ESC 102.
  • the conventional single piece ring 104 is a single piece ring that rests on the ESC 102 and the insulator pipe 108.
  • a substrate 144 when placed onto the substrate support 100, will rest on the ESC 102 and be surrounded by the conventional single piece ring 104.
  • Figure 1 B is a schematic, cross sectional view of the conventional single piece ring 104 of Figure 1 A.
  • the conventional single piece ring 104 has an upper surface 130 which is exposed to the plasma during processing.
  • the conventional single piece ring also includes a seating area 1 14 that has a top surface 1 16 that is substantially level with a substrate 144 placed on the ESC 102.
  • the existing "single piece" ring design is typically subjected to maximum erosion near a wafer seating area 1 14 due to exposure to a plasma etching process.
  • Figure 1 C shows an approximate erosion profile 1 18 of the top surface of the conventional single piece ring 104 near an end of the ring service life, with the original upper surface 130 shown in phantom for comparison.
  • the seating area 1 14 has eroded significantly more than the remaining areas of the conventional single piece ring 104 and has eroded non-uniformly. As the seating area 1 14 no longer has its original substantially planar shape, substrate positioning and processing may be adversely impacted. The entire ring 104 is typically replaced at this time, which results in wastage of quartz material.
  • the conventional single piece ring 104 protects the ESC from exposure to plasma during processing. Since the ring 104 also focuses the plasma, the ring 104 is usually made of quartz and is highly consumable during processing. In order to extend the life of the rings, a ring assembly of the present invention is designed for the least cost of manufacture and allow multiple usage to thereby reduce the cost of tool ownership (CoO) to customers.
  • CoO tool ownership
  • FIG. 2A illustrates a schematic, cross sectional view of an exemplary substrate support 200 having a ring assembly according to one embodiment of the present invention. While not discussed here in detail, the substrate support 200 is typically disposed in a plasma processing chamber, such as an etching chamber as illustrated in Figure 1A, which has been omitted for the sake of brevity.
  • the substrate support 200 generally includes an ESC 202, a ring assembly 230, a cathode 208, an insulator pipe 210, a pedestal insulator 212 and a pedestal support 214.
  • Figure 2B is a schematic, cross sectional view of the ring assembly 230 of
  • the ring assembly 230 of the present invention generally consists of two ring bodies, i.e., an inner ring body 206 and an outer ring body 204, which are positioned on the electrostatic chuck 202 during processing. Similar to the conventional single piece ring 104 discussed with reference to Figures 1 A-C above, most of the erosion takes place on the inner ring body 206 near the substrate seating area B, causing the top surface of the inner ring body 206 to no longer be planar
  • the substrate seating area B is once again substantially planar.
  • the inner ring body 206 may be flipped over and reused with the outer ring body 204. Flipping of the inner ring body 206 doubles the service life of the entire ring assembly 230 relative to the conventional single piece ring 104.
  • the inner ring body 206 is designed such that a portion of the surface (area A as shown in Figure 2B) is covered by the outer ring body 204 and hence prevents exposure to plasma. As a result, the area A remains substantially planar even as the area B erodes from plasma exposure. Since area A remains planar, this surface (i.e., area A) provides a planar bottom surface to the inner ring body 206 after being flipped over, as shown in Figure 3B.
  • the inner ring body 206 can be flipped over along an axis X ( Figure 2B) that is in parallel to the top surface 205 of the outer ring body 204 such that a bottom surface 350 of the inner ring body 206 that was in contact with an upper surface 203 of the electrostatic chuck 202 can be freshly provided as a seating area for a substrate while the planar, uneroded bottom surface 350 now facing upwards and defining areas A and B.
  • the inner ring body 206 may be used a second time with the original bottom surface 350 now facing upwards until the outer ring body 204 and/or inner ring body 206 have eroded beyond their useful life.
  • the ring shape body is shown and described in instant specification, it is understood that this concept of "flip over and reuse" should not be limited to annular ring shape. Any object with desired shape or profile is contemplated as long as the object can be disposed radially inward of the outer ring and flipped into a different position to provide a substantially planar seating area for the substrate.
  • the outer ring body 204 and inner ring body 206 can be made with different nonconducting materials to reduce the erosion rate.
  • the outer ring body 204 can also be coated or made with materials such as ceramics, PEEK, polyamides, polyimides, epoxy, etc., which are resistant to corrosive environment and other non conducting materials. Ring assemblies may also be in dielectric, metal and polysilicon etch and other applications. In conductor etching, the inner ring can be coated with nonconducting material such as ceramic to increase its service life.
  • the two-piece design of the ring assembly 230 also enables multiple reuse of the outer ring body 204 and thereby saves the quartz material and reduces the CoO.
  • This concept of protecting inner ring under outer ring, flip over and reuse can also be applied to redesign existing other rings or single rings to increase service life. This concept may also be extended to chambers processing substrate or wafer sizes of any size.
  • the ring assembly disclosed herein can be used in dielectric etch chambers such as the MxP+, eMxP+, Super-E, EMAX and EMAX CT+ chambers available from Applied Materials, Inc., Santa Clara, CA. Additionally, the ring assembly disclosed herein may also be used in metal/conductor etch chambers such as the DPS II available from Applied Materials, Inc. It is to be understood that the ring assembly discussed herein may be used in chambers sold by other manufacturers as well.
  • Figure 4 is a schematic, cross sectional view showing the ring assembly 230 illustrating spacing between the inner ring body 206 and outer ring body 204 according to one embodiment.
  • the spacing (Gap G1 and Gap G2) is the respective vertical and horizontal separation between the inner ring body 206 and the outer ring body 204.
  • the example shown is to ensure avoidance of plasma penetration and is specific to one ring used in dielectric etch chambers. The actual numbers may vary for other etch rings or the type of the etch applications.
  • Figure 5A is a schematic cross sectional view of an outer ring body 500 of a ring assembly 550 according to one embodiment.
  • Figure 5B is an enlarged view of a portion of the outer ring body 500 illustrated in Figure 5A.
  • the outer ring body 500 may comprise quartz.
  • the outer ring body 500 may comprise clear, fused quartz.
  • the outer ring body 500 may also be fabricated from or coated with other materials.
  • the outer ring body 500 includes a main body 520 having a generally planar top surface 502 and a generally planar bottom surface 504 that is substantially parallel to the top surface. While not shown here, it is understood that a substrate is generally surrounded by the outer ring body 500, and an upper surface of the substrate is facing a direction away from the bottom surface 504 of the outer ring body 500.
  • the outer ring body 500 also includes an outside surface 506 that extends between the top surface 502 and the bottom surface 504.
  • the outer ring body 500 also includes an inside surface 508 that extends between the top surface 502 and the bottom surface 504.
  • the top surface 502, bottom surface 504, outside surface 506 and inside surface 508 collectively comprise the outer ring main body 520.
  • the outer ring main body 520 has a height of between about 0.5 inches and about 0.75 inches as shown by arrows "C".
  • the inside surface 508 also includes a notch 530 which nests with an inner ring body 600, described below with reference to Figures 6A-B.
  • the notch 530 is configured to project from the upper portion of the main body 520 and form a substantially horizontal overhang or roof 532 which covers a portion of the area "Q" of the inner ring body 600 when nested.
  • the outside diameter surface 606 ( Figure 6B) of the inner ring body 600 is disposed against an inner wall 534 of the outer ring body 500.
  • the inner ring body 600 has a geometry that allows the ring assembly 550 to maintain a single sectional profile when the inner ring body 600 and outer ring body 500 are nested, no matter which of the lower or upper surfaces 602, 604 of the inner ring body 600 is mated with the notch 530 of outer ring body 500, as shown in Figure 3B.
  • the inside surface 508 is substantially vertical and perpendicular to the roof 532.
  • a first annular extension 510 is extended from the bottom surface 504 of the outer ring main body 520.
  • the first annular extension 510 extends in a direction away from the top surface 502 and is disposed at a location spaced from the edge of the outside surface 506.
  • the first annular extension 510 extends from the bottom surface 504 for a distance of between about 0.15 inches to about 0.20 inches as shown by arrows "D”.
  • the outside diameter of the first annular extension 510 is between about 9.75 inches and about 10.1 inches as shown by arrows "M”.
  • the inside diameter of the first annular extension 510 is between about 9.73 inches and about 9.93 inches as shown by arrows "L”.
  • a second annular extension 512 may also extend from the bottom surface 504 in a direction away from the top surface 502.
  • the second annular extension 512 may abut the inside surface 508.
  • the second annular extension 512 extends from the bottom surface 504 for a distance of between about 0.097 inches to about 0.103 inches as shown by arrows "G".
  • the outside diameter of the second annular extension 512 is between about 9.000 inches and about 9.100 inches as shown by arrows "K”.
  • the inside diameter of the second annular extension 512 is between about 8.300 inches and about 8.500 inches as shown by arrows "J”.
  • the first annular extension 510 may extend from the bottom surface 504 by a greater distance than the second annular extension 512 of between about 0.070 inches and about 0.075 inches as shown by arrows "F”.
  • a third annular extension 514 may extend from the main body 520 in a direction away from the outside surface 506.
  • An end of the third annular extension 514 forming part of the inside surface 508 may be angled relative to the roof 532 at an angle of between about 100 degrees and about 120 degrees, as shown by arrows ⁇ ".
  • the roof 532 forming the bottom of the third annular extension 514 may be at a height of between about 0.25 inches and about 0.30 inches above the bottom of the second annular extension 512, as shown by arrows "H”.
  • the diameter of the third annular extension 514 as measured at the bottom of the third annular extension 514 is between about 7.980 inches and about 8.000 inches, as shown by arrows ⁇ ". It is contemplated that the numbers listed here may vary depending upon the size of the substrate or chamber.
  • Figure 6A is a schematic cross sectional view of the inner ring body 600 of the ring assembly 550 according to one embodiment.
  • the inner ring body 600 and outer ring body 500 as illustrated in Figures 6A and 5A constitute a ring assembly as discussed and shown previously in Figures 2A-4.
  • Figure 6B is an enlarged view of a portion of Figure 6A.
  • the inner ring body 600 may comprise quartz or other material.
  • the inner ring body 600 may comprise clear, fused quartz.
  • the inner ring body 600 may have an inner diameter of between about 7.730 inches and about 7.740 inches as shown by arrows "N”.
  • the inner ring body 600 may have a height of between about 0.275 inches and about 0.300 inches as shown by arrows "P".
  • the inner ring body 600 may have a square or rectangular cross-section. Lower and upper surfaces 602, 604 of the inner ring body 600 are parallel and perpendicular to the center axis of the inner ring body 600. An outside diameter surface 606 of the inner ring body 600 may be perpendicular to the surfaces 602, 604 or have another shape which conforms to the inside surface 508 of the notch 530 below the roof 532 of the outer ring body 500 which is configured to nest with the inner ring body 600 when either surfaces 602, 604 are disposed adjacent the roof 532 of the outer ring body 500.
  • the service life of the ring assembly is improved relative to a conventional single piece ring.
  • the concept of flip over and reuse of the inner ring reduces the wastage of material.
  • the outer ring that is used continuously for multiple wet cleans until its service life is over further reduce the cost of consumables to customers.
  • the usage of non-conducting materials also improves the service life of the ring assembly.

Abstract

The present invention generally relates to a ring assembly that may be used in an etching or other plasma processing chamber. The ring assembly generally includes an inner ring and an outer ring disposed radially outward of the inner ring. The inner ring will correspond to the location where the majority of erosion occurs during use. This inner ring can be flipped and reused until both sides have eroded beyond their service life. Collectively, the two rings generally have the shape of a single piece ring, but the service life of the ring assembly is longer than a conventional single piece ring.

Description

LIFE ENHANCEMENT OF RING ASSEMBLY IN SEMICONDUCTOR
MANUFACTURING CHAMBERS
BACKGROUND OF THE INVENTION
Field of the Invention
[0001] Embodiments of the present invention generally relate to a ring and ring assembly for an etching or other plasma processing chamber.
Description of the Related Art
[0002] In semiconductor processing chambers, substrates undergo various processes such as deposition, etching and annealing. During some of the processes, the substrate is placed onto a substrate support such as an electrostatic chuck (ESC), for processing. In an etch process a ring may be placed around the substrate to prevent erosion of the areas of the substrate support that are not covered by the substrate. The ring focuses the plasma and positions the substrate in place.
[0003] Rings are usually made of quartz material and are highly consumed in the etch process as they are exposed to etching gases and/or fluids. The rings are etched during wafer processing and need to be replaced after a set of substrates (wafers) are processed. The rings that are significantly eroded are usually replaced during wet clean. Wet cleaning is a process for removing etching residues using a cleaning chemical, and some of the cleaning chemicals may remain in the chamber after chamber cleaning. Therefore, the rings may be exposed to and eroded by the cleaning chemical. Thus, significantly reducing the service life of the ring. In some situations, a ring may need to be replaced after every wet clean, which leads to wastage of expensive quartz material.
[0004] Thus, there is a need in the art for a ring with an improved service life.
SUMMARY OF THE INVENTION
[0005] The present invention generally relates to a ring assembly that may be used in an etching or other plasma processing chamber. A ring assembly as described herein is designed to increase the useful life of the ring as compared to conventional rings. The ring assembly has at least two distinct pieces, also referred to as bodies. An inner ring body will correspond to a location where the majority of erosion occurs during use. The inner ring body of the ring assembly can be flipped and used again until both sides have eroded beyond their useful life. Collectively, the two bodies generally have the shape of a single piece ring, but service life of the ring assembly has a longer service life than a conventional single piece ring.
[0006] In one embodiment, a ring assembly is provided. The ring assembly generally includes an outer ring body having a notch on an inside surface, the notch having a roof, and an inner ring body nestable in the notch of the outer ring body when either a top surface or a bottom surface of the inner ring body is disposed adjacent the roof. In one aspect, the roof of the outer ring body partially covers the top surface of the inner ring body, and an outside diameter surface of the inner ring body conforms with the notch when either the top surface or the bottom surface is disposed against the roof.
[0007] In another embodiment, a ring assembly is provided. The ring assembly generally includes an outer ring body, having a top surface and a bottom surface substantially parallel to the top surface, an outside surface extending between the top and bottom surfaces, an inside surface extending between the top and bottom surfaces, a notch formed on the inside surface, a first and second annular extensions extending from the bottom surface of the outer ring, wherein the first and second annular extensions are parallel and radially spaced from each other, a third annular extension extending from the outer ring in a direction perpendicular to the first and second annular extensions. The ring assembly also includes an inner ring body disposed radially inward of the outer ring body. The inner ring body has a top surface abutting or projecting inward of the third annular extension, and an outside diameter surface disposed below the third annular extension and abutting the outer ring. In various aspects, the inner ring body is nested in the notch in two flipped orientations such that the third annular extension partially covers the top surface of the inner ring body. [0008] In yet another embodiment, a ring assembly is provided. The ring assembly generally includes an outer ring body having a top surface, a bottom surface substantially parallel to the top surface, an outside surface extending between the top and bottom surfaces, an inside surface extending between the top and bottom surfaces, a first annular extension extending from the bottom surface in a direction away from the top surface and from a location adjacent to an edge of the outside surface, a second annular extension extending from the bottom surface in a direction away from the top surface, the second annular extension abutting the inside surface, and a third annular extension extending from the outer ring body in a direction away from the outside surface, the third annular extension abutting the top surface. The ring assembly also includes an inner ring body being surrounded by the outer ring body, wherein the inner ring body is symmetrically nestable against the outer ring body in two orientations in which the third annular extension partially covers the inner ring body. In one aspect, the third extension radially extends a distance to partially cover an upper surface of the inner ring body.
[0009] In one embodiment, a ring assembly is provided. The ring assembly includes a first ring body having a top surface and a bottom surface substantially parallel to the top surface, and a second ring body disposed radially inward of the first ring body. In one aspect, the first ring body has an overhang on an inside surface of the first ring body, and the second ring body is nestable in contact with the first ring body below the overhang when either a top surface or a bottom surface of the second ring body is disposed adjacent the overhang. The second ring body is surrounded by the first ring body, and the second ring body can be flipped over and placed at the same location to provide a substantially planar resting surface. In another aspect, the first ring body generally includes a top surface and a bottom surface substantially parallel to the top surface. The first ring body has an outside surface extending between the top and bottom surfaces and an inside surface extending between the top and bottom surfaces. The first ring body includes a first annular extension extending from the bottom surface in a direction away from the top surface and disposing at a location spaced from the edge of the outside surface, and a second annular extension extending from the bottom surface in a direction away from the top surface. The first annular extension generally abuts the inside surface. The first ring body may additionally include a third annular extension extending from the inside surface in a direction away from the outside surface. The third annular extension generally abuts the top surface and may be angled relative to the top surface of the first ring body. In various embodiments, the third extension of the first ring body radially extends a distance to partially cover the top surface of the second ring body. The top surface of the second ring body that was covered by the third extension acts as a base to the second ring body when reused by flipping over. The above-mentioned ring assembly that has the first and second ring bodies can be used together as a process kit.
[0010] In yet one another embodiment, a process chamber for processing a substrate is disclosed. The process chamber generally includes a pedestal support having a substrate receiving surface, a pedestal insulator configured to electrically isolate chamber walls of the process chamber and the pedestal support, and a ring assembly rested on the pedestal insulator and at least a portion of the substrate receiving surface. The ring assembly generally includes a first ring body and a second ring body disposed radially inward of the first ring body. The second ring body is surrounded by the first ring body, and the second ring body can be flipped over and placed at the same location to provide a substantially planar resting surface for the substrate. In one aspect, the first ring body provides first and second annular extensions extending from a bottom surface of the first ring body, wherein the first and second annular extensions are substantially parallel and radially spaced from each other, and a portion of the second annular extension is in contact with the substrate receiving surface of the pedestal support. The first ring body may include a third annular extension extending from the first ring body in a direction perpendicular to the first and second annular extensions. The third annular extension is configured to partially cover an upper surface of the second ring body such that the uncovered upper surface of the second ring body acts as a base to the second ring body when reused by flipping over.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011 ] So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
[0012] Figure 1A is a schematic, cross sectional view of an exemplary substrate support with a conventional single piece ring disposed in a process chamber.
[0013] Figure 1 B is a schematic, cross sectional view of the ring of Figure 1 A.
[0014] Figure 1 C is a schematic illustration showing erosion profile of the ring of Figure 1 A.
[0015] Figure 2A is a schematic, cross sectional view of an exemplary substrate support having a ring assembly according to one embodiment of the invention.
[0016] Figure 2B is a schematic, cross sectional view of the ring assembly of Figure 2A.
[0017] Figure 3A is a schematic illustration showing erosion profile of the ring assembly according to one embodiment.
[0018] Figure 3B is a schematic, cross sectional view of the ring assembly after the inner ring has been flipped according to one embodiment.
[0019] Figure 4 is a schematic, cross sectional view showing spacing between inner and outer rings of the ring assembly according to one embodiment.
[0020] Figure 5A is a schematic cross sectional view of an outer ring of a ring assembly according to one embodiment.
[0021] Figure 5B is an enlarged view of a portion of the outer ring illustrated in Figure 5A.
[0022] Figure 6A is a schematic cross sectional view of the inner ring of a ring assembly according to one embodiment. [0023] Figure 6B is an enlarged view of a portion of Figure 6A.
[0024] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
DETAILED DESCRIPTION
[0025] The present invention generally relates to a ring assembly that may be used in an etching or other plasma processing chamber. The ring assembly may be made at least in two distinct pieces, for example, an inner ring body and an outer ring body which nest together. The inner ring body has a geometry that allows the ring assembly to maintain a single sectional profile when the inner ring body and outer ring body are nested together, no matter which side of the inner ring body is facing the outer inner ring body. The inner ring body is reusable in that if one surface becomes eroded, the inner ring body may be flipped over and used again with the outer ring body until the outer ring body and/or both sides of the inner ring body have eroded beyond their useful life. Collectively, the two bodies generally have the shape of a single conventional piece ring, but the service life of the ring assembly is longer than a conventional single piece ring.
[0026] Figure 1A is a schematic, cross sectional view of an exemplary substrate support 100 with a conventional single piece ring 104 disposed in a process chamber 128. While not discussed here in detail, the substrate support 100 is typically disposed in a plasma processing chamber, such as an etching chamber. The process chamber 128 may be utilized alone or, as a processing module of an integrated semiconductor substrate processing system, or cluster tool. The substrate support 100 is disposed below a showerhead 120, which is used to supply various gases into the process chamber 128. The substrate support 100 may be biased by a DC power supply (now shown). An RF power source 126 may optionally be coupled to the substrate support 100 through a matching network 122. The showerhead 120 may be coupled to an RF source 132 through a matching network 124. The interior of the process chamber 128 is a high vacuum vessel that is coupled through a throttle valve (not shown) to a vacuum pump 134. In operation, the substrate is placed on the substrate support 100 and the chamber interior is pumped down to a near vacuum environment. One or more gases are introduced from the gas panel via the showerhead 120 into the process chamber 128, and ignited into a plasma in the process chamber 128 by applying the power from the RF source 132 to the showerhead 120 disposed on the substrate support 100 and/or applying RF power from the RF source 126 to the substrate support 100 while applying the power from the bias source to bias the substrate support 100. The formed plasma may be used to etch a feature in a substrate during processing and then pumped out of the process chamber 128 through the vacuum pump 134. It is understood that other components of the process chamber 128 have been omitted for the sake of brevity.
[0027] The substrate support 100 generally includes an electrostatic chuck (ESC) 102, a conventional single piece ring 104, a cathode 106 to electrically bias the ESC 102, an insulator pipe 108, a pedestal insulator 1 10, and a pedestal support 1 12. The insulator pipe 108 and the pedestal insulator 1 10 function to electrically isolate the chamber walls and the substrate support 100, respectively, from the electrical bias applied to the ESC 102. In the embodiment shown in Figure 1A, the conventional single piece ring 104 is a single piece ring that rests on the ESC 102 and the insulator pipe 108. A substrate 144, when placed onto the substrate support 100, will rest on the ESC 102 and be surrounded by the conventional single piece ring 104.
[0028] Figure 1 B is a schematic, cross sectional view of the conventional single piece ring 104 of Figure 1 A. The conventional single piece ring 104 has an upper surface 130 which is exposed to the plasma during processing. The conventional single piece ring also includes a seating area 1 14 that has a top surface 1 16 that is substantially level with a substrate 144 placed on the ESC 102. The existing "single piece" ring design is typically subjected to maximum erosion near a wafer seating area 1 14 due to exposure to a plasma etching process. Figure 1 C shows an approximate erosion profile 1 18 of the top surface of the conventional single piece ring 104 near an end of the ring service life, with the original upper surface 130 shown in phantom for comparison. As shown in Figure 1 C, the seating area 1 14 has eroded significantly more than the remaining areas of the conventional single piece ring 104 and has eroded non-uniformly. As the seating area 1 14 no longer has its original substantially planar shape, substrate positioning and processing may be adversely impacted. The entire ring 104 is typically replaced at this time, which results in wastage of quartz material.
[0029] In plasma etch chambers, the conventional single piece ring 104 protects the ESC from exposure to plasma during processing. Since the ring 104 also focuses the plasma, the ring 104 is usually made of quartz and is highly consumable during processing. In order to extend the life of the rings, a ring assembly of the present invention is designed for the least cost of manufacture and allow multiple usage to thereby reduce the cost of tool ownership (CoO) to customers.
[0030] Figure 2A illustrates a schematic, cross sectional view of an exemplary substrate support 200 having a ring assembly according to one embodiment of the present invention. While not discussed here in detail, the substrate support 200 is typically disposed in a plasma processing chamber, such as an etching chamber as illustrated in Figure 1A, which has been omitted for the sake of brevity. The substrate support 200 generally includes an ESC 202, a ring assembly 230, a cathode 208, an insulator pipe 210, a pedestal insulator 212 and a pedestal support 214.
[0031 ] Figure 2B is a schematic, cross sectional view of the ring assembly 230 of
Figure 2A. The ring assembly 230 of the present invention generally consists of two ring bodies, i.e., an inner ring body 206 and an outer ring body 204, which are positioned on the electrostatic chuck 202 during processing. Similar to the conventional single piece ring 104 discussed with reference to Figures 1 A-C above, most of the erosion takes place on the inner ring body 206 near the substrate seating area B, causing the top surface of the inner ring body 206 to no longer be planar
(see erosion profile 306 and eroded seating surface 352 in Figure 3A). However, once the eroded inner ring body 206 is flipped as shown in Figure 3B, the substrate seating area B is once again substantially planar. Thus, rather than replacing an entire single ring, the inner ring body 206 may be flipped over and reused with the outer ring body 204. Flipping of the inner ring body 206 doubles the service life of the entire ring assembly 230 relative to the conventional single piece ring 104.
[0032] In one embodiment, the inner ring body 206 is designed such that a portion of the surface (area A as shown in Figure 2B) is covered by the outer ring body 204 and hence prevents exposure to plasma. As a result, the area A remains substantially planar even as the area B erodes from plasma exposure. Since area A remains planar, this surface (i.e., area A) provides a planar bottom surface to the inner ring body 206 after being flipped over, as shown in Figure 3B. After a wet clean cycle, the inner ring body 206 can be flipped over along an axis X (Figure 2B) that is in parallel to the top surface 205 of the outer ring body 204 such that a bottom surface 350 of the inner ring body 206 that was in contact with an upper surface 203 of the electrostatic chuck 202 can be freshly provided as a seating area for a substrate while the planar, uneroded bottom surface 350 now facing upwards and defining areas A and B. Thus, the inner ring body 206 may be used a second time with the original bottom surface 350 now facing upwards until the outer ring body 204 and/or inner ring body 206 have eroded beyond their useful life.
[0033] While the ring shape body is shown and described in instant specification, it is understood that this concept of "flip over and reuse" should not be limited to annular ring shape. Any object with desired shape or profile is contemplated as long as the object can be disposed radially inward of the outer ring and flipped into a different position to provide a substantially planar seating area for the substrate. The outer ring body 204 and inner ring body 206 can be made with different nonconducting materials to reduce the erosion rate. The outer ring body 204 can also be coated or made with materials such as ceramics, PEEK, polyamides, polyimides, epoxy, etc., which are resistant to corrosive environment and other non conducting materials. Ring assemblies may also be in dielectric, metal and polysilicon etch and other applications. In conductor etching, the inner ring can be coated with nonconducting material such as ceramic to increase its service life.
[0034] The two-piece design of the ring assembly 230 enables the outer ring body
204 to be least sacrificed during the process. The two-piece design of the ring assembly 230 also enables multiple reuse of the outer ring body 204 and thereby saves the quartz material and reduces the CoO. This concept of protecting inner ring under outer ring, flip over and reuse can also be applied to redesign existing other rings or single rings to increase service life. This concept may also be extended to chambers processing substrate or wafer sizes of any size.
[0035] The ring assembly disclosed herein can be used in dielectric etch chambers such as the MxP+, eMxP+, Super-E, EMAX and EMAX CT+ chambers available from Applied Materials, Inc., Santa Clara, CA. Additionally, the ring assembly disclosed herein may also be used in metal/conductor etch chambers such as the DPS II available from Applied Materials, Inc. It is to be understood that the ring assembly discussed herein may be used in chambers sold by other manufacturers as well.
[0036] Figure 4 is a schematic, cross sectional view showing the ring assembly 230 illustrating spacing between the inner ring body 206 and outer ring body 204 according to one embodiment. The spacing (Gap G1 and Gap G2) is the respective vertical and horizontal separation between the inner ring body 206 and the outer ring body 204. In regards to Table I, the example shown is to ensure avoidance of plasma penetration and is specific to one ring used in dielectric etch chambers. The actual numbers may vary for other etch rings or the type of the etch applications.
Table I
Figure imgf000011_0001
[0037] Figure 5A is a schematic cross sectional view of an outer ring body 500 of a ring assembly 550 according to one embodiment. Figure 5B is an enlarged view of a portion of the outer ring body 500 illustrated in Figure 5A. In one embodiment, the outer ring body 500 may comprise quartz. In another embodiment, the outer ring body 500 may comprise clear, fused quartz. The outer ring body 500 may also be fabricated from or coated with other materials.
[0038] As shown in Figures 5A and 5B, the outer ring body 500 includes a main body 520 having a generally planar top surface 502 and a generally planar bottom surface 504 that is substantially parallel to the top surface. While not shown here, it is understood that a substrate is generally surrounded by the outer ring body 500, and an upper surface of the substrate is facing a direction away from the bottom surface 504 of the outer ring body 500. The outer ring body 500 also includes an outside surface 506 that extends between the top surface 502 and the bottom surface 504. The outer ring body 500 also includes an inside surface 508 that extends between the top surface 502 and the bottom surface 504. The top surface 502, bottom surface 504, outside surface 506 and inside surface 508 collectively comprise the outer ring main body 520. The outer ring main body 520 has a height of between about 0.5 inches and about 0.75 inches as shown by arrows "C". The inside surface 508 also includes a notch 530 which nests with an inner ring body 600, described below with reference to Figures 6A-B. The notch 530 is configured to project from the upper portion of the main body 520 and form a substantially horizontal overhang or roof 532 which covers a portion of the area "Q" of the inner ring body 600 when nested. In other words, the outside diameter surface 606 (Figure 6B) of the inner ring body 600 is disposed against an inner wall 534 of the outer ring body 500. The inner ring body 600 has a geometry that allows the ring assembly 550 to maintain a single sectional profile when the inner ring body 600 and outer ring body 500 are nested, no matter which of the lower or upper surfaces 602, 604 of the inner ring body 600 is mated with the notch 530 of outer ring body 500, as shown in Figure 3B. In one embodiment, the inside surface 508 is substantially vertical and perpendicular to the roof 532.
[0039] In one embodiment, a first annular extension 510 is extended from the bottom surface 504 of the outer ring main body 520. The first annular extension 510 extends in a direction away from the top surface 502 and is disposed at a location spaced from the edge of the outside surface 506. In one example, the first annular extension 510 extends from the bottom surface 504 for a distance of between about 0.15 inches to about 0.20 inches as shown by arrows "D". The outside diameter of the first annular extension 510 is between about 9.75 inches and about 10.1 inches as shown by arrows "M". The inside diameter of the first annular extension 510 is between about 9.73 inches and about 9.93 inches as shown by arrows "L".
[0040] A second annular extension 512 may also extend from the bottom surface 504 in a direction away from the top surface 502. The second annular extension 512 may abut the inside surface 508. In one embodiment, the second annular extension 512 extends from the bottom surface 504 for a distance of between about 0.097 inches to about 0.103 inches as shown by arrows "G". In one embodiment, the outside diameter of the second annular extension 512 is between about 9.000 inches and about 9.100 inches as shown by arrows "K". In another embodiment, the inside diameter of the second annular extension 512 is between about 8.300 inches and about 8.500 inches as shown by arrows "J". The first annular extension 510 may extend from the bottom surface 504 by a greater distance than the second annular extension 512 of between about 0.070 inches and about 0.075 inches as shown by arrows "F".
[0041] A third annular extension 514 may extend from the main body 520 in a direction away from the outside surface 506. An end of the third annular extension 514 forming part of the inside surface 508 may be angled relative to the roof 532 at an angle of between about 100 degrees and about 120 degrees, as shown by arrows Έ". The roof 532 forming the bottom of the third annular extension 514 may be at a height of between about 0.25 inches and about 0.30 inches above the bottom of the second annular extension 512, as shown by arrows "H". The diameter of the third annular extension 514 as measured at the bottom of the third annular extension 514 is between about 7.980 inches and about 8.000 inches, as shown by arrows Ί". It is contemplated that the numbers listed here may vary depending upon the size of the substrate or chamber.
[0042] Figure 6A is a schematic cross sectional view of the inner ring body 600 of the ring assembly 550 according to one embodiment. The inner ring body 600 and outer ring body 500 as illustrated in Figures 6A and 5A constitute a ring assembly as discussed and shown previously in Figures 2A-4. Figure 6B is an enlarged view of a portion of Figure 6A. In one embodiment, the inner ring body 600 may comprise quartz or other material. In another embodiment, the inner ring body 600 may comprise clear, fused quartz. The inner ring body 600 may have an inner diameter of between about 7.730 inches and about 7.740 inches as shown by arrows "N". The inner ring body 600 may have a height of between about 0.275 inches and about 0.300 inches as shown by arrows "P". The inner ring body 600 may have a square or rectangular cross-section. Lower and upper surfaces 602, 604 of the inner ring body 600 are parallel and perpendicular to the center axis of the inner ring body 600. An outside diameter surface 606 of the inner ring body 600 may be perpendicular to the surfaces 602, 604 or have another shape which conforms to the inside surface 508 of the notch 530 below the roof 532 of the outer ring body 500 which is configured to nest with the inner ring body 600 when either surfaces 602, 604 are disposed adjacent the roof 532 of the outer ring body 500.
[0043] By utilizing a ring assembly that comprises two ring bodies (i.e., inner and outer rings) rather than a single piece, the service life of the ring assembly is improved relative to a conventional single piece ring. Particularly, the concept of flip over and reuse of the inner ring reduces the wastage of material. The outer ring that is used continuously for multiple wet cleans until its service life is over further reduce the cost of consumables to customers. The usage of non-conducting materials also improves the service life of the ring assembly.
[0044] While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

What Is Claimed Is:
1 . A ring assembly, comprising:
an outer ring body having a notch on an inside surface, the notch having a roof; and
an inner ring body nestable in the notch of the outer ring body when either a top surface or a bottom surface of the inner ring body is disposed adjacent the roof.
2. The ring assembly of claim 1 , wherein the outer ring body further comprises: a top surface and a bottom surface substantially parallel to the top surface; an outside surface extending between the top and bottom surfaces;
a first extension extending from the bottom surface in a direction away from the top surface and from a location spaced from the outside surface;
a second extension extending from the bottom surface in a direction away from the top surface, the second annular extension abutting the inside surface; and a third extension extending from the outer ring body in a direction away from the outside surface, the third annular extension forming the roof of the notch.
3. The ring assembly of claim 2, wherein the third annular extension has an end slanted relative to the roof.
4. The ring assembly of claim 2, wherein the roof of the outer ring body partially covers the top surface of the inner ring body.
5. The ring assembly of claim 4, wherein the outside diameter surface of the inner ring body conforms with the notch when either the top surface or the bottom surface is disposed against the roof.
6. A ring assembly, comprising:
an outer ring body, comprising:
a top surface and a bottom surface substantially parallel to the top surface; an outside surface extending between the top and bottom surfaces; an inside surface extending between the top and bottom surfaces;
a notch formed on the inside surface;
a first and second annular extensions extending from the bottom surface of the outer ring, wherein the first and second annular extensions are parallel and radially spaced from each other;
a third annular extension extending from the outer ring in a direction perpendicular to the first and second annular extensions; and
an inner ring body disposed radially inward of the outer ring body, the second ring body comprising:
a top surface abutting and projecting inward of the third annular extension; and
an outside diameter surface disposed below the third annular extension and abutting the outer ring.
7. The ring assembly of claim 6, wherein the inner ring body is nestable in the notch in two flipped orientations, the nested inner ring body and outer ring body having the same combined sectional profile when the inner ring body is in either flipped orientation.
8. The ring assembly of claim 7, wherein the third annular extension partially covers the top surface of the inner ring body.
9. The ring assembly of claim 8, wherein the third annular extension has a surface slanted relative to the top surface and the bottom surface of the outer ring body.
10. A ring assembly, comprising:
an outer ring body comprising:
a top surface;
a bottom surface substantially parallel to the top surface;
an outside surface extending between the top and bottom surfaces;
an inside surface extending between the top and bottom surfaces; a first annular extension extending from the bottom surface in a direction away from the top surface and from a location adjacent to an edge of the outside surface;
a second annular extension extending from the bottom surface in a direction away from the top surface, the second annular extension abutting the inside surface; and
a third annular extension extending from the outer ring body in a direction away from the outside surface, the third annular extension abutting the top surface; and
an inner ring body being surrounded by the outer ring body, wherein the inner ring body is symetrically nestable against the outer ring body in two orientations in which the third annular extension partially covers the inner ring body.
1 1 . The ring assembly of claim 10, wherein the inner and outer ring bodies are coated with materials with high plasma resistance.
12. The ring assembly of claim 10, wherein the third annular extension has a surface slanted relative to the top surface, the bottom surface, and the inside surface.
13. The ring assembly of claim 12, wherein the first annular extension and the second annular extension extend different distances from the bottom surface.
14. The ring assembly of claim 10, wherein the third extension radially extends a distance to partially cover an upper surface of the inner ring body.
15. A ring assembly, comprising:
an outer ring body; and
an inner ring body being surrounded by the outer ring body, wherein the inner ring body is symmetrically nestable against the outer ring body in two orientations, the nested inner ring body and outer ring body having the same combined sectional profile when the inner ring body is in either flipped orientation.
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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM464809U (en) * 2012-10-20 2013-11-01 Applied Materials Inc Focus ring segment and assembly
US9768052B2 (en) * 2013-03-14 2017-09-19 Applied Materials, Inc. Minimal contact edge ring for rapid thermal processing
CN105453234B (en) * 2013-08-10 2018-11-02 应用材料公司 The method for polishing new or renovation electrostatic chuck
JP2015115421A (en) * 2013-12-10 2015-06-22 東京エレクトロン株式会社 Plasma processing apparatus and focus ring
CN106149049A (en) * 2015-04-13 2016-11-23 聿光科技有限公司 The epitaxy reactor of wafer and central authorities' astrolabe thereof
TWM534436U (en) * 2015-07-03 2016-12-21 Applied Materials Inc Frame, multi-piece under substrate cover frame and processing chamber
JP6435247B2 (en) * 2015-09-03 2018-12-05 新光電気工業株式会社 Electrostatic chuck device and method of manufacturing electrostatic chuck device
JP7098273B2 (en) 2016-03-04 2022-07-11 アプライド マテリアルズ インコーポレイテッド Universal process kit
US11387134B2 (en) * 2018-01-19 2022-07-12 Applied Materials, Inc. Process kit for a substrate support
US20190301012A1 (en) * 2018-04-02 2019-10-03 Veeco Instruments Inc. Wafer processing system with flow extender
JP2021180283A (en) * 2020-05-15 2021-11-18 東京エレクトロン株式会社 Mounting base assembly, substrate processing apparatus and substrate processing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040000375A1 (en) * 2002-06-27 2004-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma etch chamber equipped with multi-layer insert ring
US6689249B2 (en) * 1996-11-29 2004-02-10 Applied Materials, Inc Shield or ring surrounding semiconductor workpiece in plasma chamber
US20050155718A1 (en) * 2004-01-20 2005-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Step edge insert ring for etch chamber
US20070209931A1 (en) * 2006-03-07 2007-09-13 Miller Keith A Notched deposition ring
US20080194113A1 (en) * 2006-09-20 2008-08-14 Samsung Electronics Co., Ltd. Methods and apparatus for semiconductor etching including an electro static chuck

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5803977A (en) * 1992-09-30 1998-09-08 Applied Materials, Inc. Apparatus for full wafer deposition
US5476548A (en) * 1994-06-20 1995-12-19 Applied Materials, Inc. Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring
US5632873A (en) * 1995-05-22 1997-05-27 Stevens; Joseph J. Two piece anti-stick clamp ring
US5748434A (en) * 1996-06-14 1998-05-05 Applied Materials, Inc. Shield for an electrostatic chuck
US5740009A (en) * 1996-11-29 1998-04-14 Applied Materials, Inc. Apparatus for improving wafer and chuck edge protection
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
US5955381A (en) * 1998-03-03 1999-09-21 Lucent Technologies Inc. Integrated circuit fabrication
US6117349A (en) * 1998-08-28 2000-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Composite shadow ring equipped with a sacrificial inner ring
US6123804A (en) * 1999-02-22 2000-09-26 Applied Materials, Inc. Sectional clamp ring
JP4676074B2 (en) * 2001-02-15 2011-04-27 東京エレクトロン株式会社 Focus ring and plasma processing apparatus
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
US20030106646A1 (en) * 2001-12-11 2003-06-12 Applied Materials, Inc. Plasma chamber insert ring
US7041200B2 (en) * 2002-04-19 2006-05-09 Applied Materials, Inc. Reducing particle generation during sputter deposition
KR20060005560A (en) * 2004-07-13 2006-01-18 삼성전자주식회사 Apparatus for fabricating semiconductor device using plasma
KR100610010B1 (en) * 2004-07-20 2006-08-08 삼성전자주식회사 Apparatus for
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US20080289766A1 (en) * 2007-05-22 2008-11-27 Samsung Austin Semiconductor Lp Hot edge ring apparatus and method for increased etch rate uniformity and reduced polymer buildup
US20090221150A1 (en) * 2008-02-29 2009-09-03 Applied Materials, Inc. Etch rate and critical dimension uniformity by selection of focus ring material
KR101533138B1 (en) * 2008-09-08 2015-07-01 시바우라 메카트로닉스 가부시끼가이샤 Substrate processing apparatus and substrate processing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6689249B2 (en) * 1996-11-29 2004-02-10 Applied Materials, Inc Shield or ring surrounding semiconductor workpiece in plasma chamber
US20040000375A1 (en) * 2002-06-27 2004-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma etch chamber equipped with multi-layer insert ring
US20050155718A1 (en) * 2004-01-20 2005-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Step edge insert ring for etch chamber
US20070209931A1 (en) * 2006-03-07 2007-09-13 Miller Keith A Notched deposition ring
US20080194113A1 (en) * 2006-09-20 2008-08-14 Samsung Electronics Co., Ltd. Methods and apparatus for semiconductor etching including an electro static chuck

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US8740206B2 (en) 2014-06-03
WO2011094230A3 (en) 2011-11-17
US20140238604A1 (en) 2014-08-28
KR20120007717U (en) 2012-11-08
US9960019B2 (en) 2018-05-01
KR200479167Y1 (en) 2015-12-28
TW201131650A (en) 2011-09-16
US20110180983A1 (en) 2011-07-28
TWI517239B (en) 2016-01-11
CN203288565U (en) 2013-11-13

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