JP4386753B2 - ウェハーステージ及びプラズマ処理装置 - Google Patents
ウェハーステージ及びプラズマ処理装置 Download PDFInfo
- Publication number
- JP4386753B2 JP4386753B2 JP2004042323A JP2004042323A JP4386753B2 JP 4386753 B2 JP4386753 B2 JP 4386753B2 JP 2004042323 A JP2004042323 A JP 2004042323A JP 2004042323 A JP2004042323 A JP 2004042323A JP 4386753 B2 JP4386753 B2 JP 4386753B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- electrode
- wafer stage
- outer ring
- magnets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002184 metal Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 230000002093 peripheral effect Effects 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 121
- 238000000034 method Methods 0.000 description 22
- 229920000642 polymer Polymers 0.000 description 19
- 230000008569 process Effects 0.000 description 13
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 230000004907 flux Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Description
前記ウェハー載置面より外側で、かつ前記電極上に位置する外周縁領域に設けられた複数のマグネットであって、隣り合うマグネットは互いに異なる極性を有する複数のマグネットと、
前記ウェハー載置面より外側で、前記複数のマグネットに対応する位置に配置された外側リングと、前記外側リングの下側に固定され、前記複数のマグネットとの磁力で固定するための磁気金属リングと、
を備える。ウェハーステージはプラズマ処理システムでウェハーを保持するために用いられる。ウェハーステージは、ウェハーが配置され、電流が供給され、その直径がウェハーの直径よりも大きい電極と、電極の外周縁領域に相当する場所の上で径方向配置によって離れて配置され、チャンバの内部に向かうその磁極が交互の極性になるように配置されている複数のマグネットと、そしてウェハーの周囲に配置されかつその下側に磁気金属リングを有する外側リングとから構成されている。
[実施形態1]
[実施形態2]
12 電極
13 薄い誘電体板
17 外側リング
24 マグネット
25 磁気金属リング
Claims (10)
- ウェハー載置面を有するウェハー載置部と、
前記ウェハー載置部の下側に位置し、前記ウェハー載置面の直径より大きい電極と、
前記ウェハー載置面の外縁より外側で、かつ前記電極の上側に位置する外周縁領域に設けられた複数のマグネットであって、隣り合うマグネットは互いに異なる極性を有する複数のマグネットと、
前記ウェハー載置面の外縁より外側で、前記複数のマグネットに対応する位置に配置された外側リングと、
前記外側リングの下側に固定され、前記複数のマグネットとの磁力で固定するための磁気金属リングと、
を備えるウェハーステージ。 - 前記ウェハー載置部は、誘電体板からなることを特徴とする請求項1に記載のウェハーステージ。
- 前記ウェハー載置部は、前記電極と一体に構成されていることを特徴とする請求項1に記載のウェハーステージ。
- 前記外側リングは、半導体材料からなることを特徴とする請求項1に記載のウェハーステージ。
- 前記複数のマグネットは、周方向に離間して配置された棒状磁石であることを特徴とする請求項1に記載のウェハーステージ。
- 前記複数のマグネットは、径方向に離間して配置された環状磁石であることを特徴とする請求項1に記載のウェハーステージ。
- 前記電極には温度制御用液体を流すための通路が設けられていることを特徴とする請求項1に記載のウェハーステージ。
- 前記電極と前記マグネットの間には、誘電体板が設けられていることを特徴とする請求項1に記載のウェハーステージ。
- 前記マグネットは、誘電体板の外周縁領域の表面に、前記マグネットの磁極面を露出させた状態で埋め込まれていることを特徴とする請求項1に記載のウェハーステージ。
- 請求項1乃至9に記載のウェハーステージを有するプラズマ処理装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004042323A JP4386753B2 (ja) | 2004-02-19 | 2004-02-19 | ウェハーステージ及びプラズマ処理装置 |
GB0502460A GB2411290B (en) | 2004-02-19 | 2005-02-08 | Wafer stage |
TW094104521A TW200539258A (en) | 2004-02-19 | 2005-02-16 | Wafer stage |
KR1020050013735A KR20060042099A (ko) | 2004-02-19 | 2005-02-18 | 웨이퍼 스테이지 |
FR0501678A FR2866752A1 (fr) | 2004-02-19 | 2005-02-18 | Plateau de support de puce |
US10/906,435 US7164571B2 (en) | 2004-02-19 | 2005-02-19 | Wafer stage with a magnet |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004042323A JP4386753B2 (ja) | 2004-02-19 | 2004-02-19 | ウェハーステージ及びプラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005235970A JP2005235970A (ja) | 2005-09-02 |
JP4386753B2 true JP4386753B2 (ja) | 2009-12-16 |
Family
ID=34373674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004042323A Expired - Fee Related JP4386753B2 (ja) | 2004-02-19 | 2004-02-19 | ウェハーステージ及びプラズマ処理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7164571B2 (ja) |
JP (1) | JP4386753B2 (ja) |
KR (1) | KR20060042099A (ja) |
FR (1) | FR2866752A1 (ja) |
GB (1) | GB2411290B (ja) |
TW (1) | TW200539258A (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100702846B1 (ko) | 2006-05-16 | 2007-04-03 | 삼성전자주식회사 | 이온주입설비의 정전척 크리닝장치 |
TW200935506A (en) * | 2007-11-16 | 2009-08-16 | Panasonic Corp | Plasma dicing apparatus and semiconductor chip manufacturing method |
TWI497244B (zh) * | 2008-11-21 | 2015-08-21 | 尼康股份有限公司 | A holding member managing means, a stacked semiconductor manufacturing apparatus, and a holding member managing method |
JP5873251B2 (ja) * | 2011-04-28 | 2016-03-01 | キヤノンアネルバ株式会社 | 基板トレイ及び該トレイを用いた基板処理装置 |
WO2012168709A2 (en) * | 2011-06-07 | 2012-12-13 | Power Vision Limited | Improvements to the application of coating materials |
DE102011115498A1 (de) * | 2011-10-11 | 2012-12-20 | Carl Zeiss Smt Gmbh | Lagervorrichtung zur Lagerung eines Substrats und mikrolithographische Projektionsbelichtungsanlage mit einer solchen Lagervorrichtung |
JP5827344B2 (ja) * | 2011-12-15 | 2015-12-02 | キヤノンアネルバ株式会社 | 処理装置およびシールド |
WO2013088624A1 (ja) * | 2011-12-15 | 2013-06-20 | キヤノンアネルバ株式会社 | 処理装置およびシールド |
JP6689020B2 (ja) * | 2013-08-21 | 2020-04-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
PE20171775A1 (es) | 2015-04-15 | 2017-12-21 | Vision Ease Lp | Lente oftalmico con microlentes graduados |
US10268050B2 (en) | 2015-11-06 | 2019-04-23 | Hoya Lens Thailand Ltd. | Spectacle lens |
WO2019166653A1 (en) | 2018-03-01 | 2019-09-06 | Essilor International | Lens element |
US11378818B2 (en) | 2018-03-01 | 2022-07-05 | Essilor International | Lens element |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2687012B2 (ja) * | 1989-06-01 | 1997-12-08 | 東京エレクトロン株式会社 | プラズマエッチング装置 |
US5224581A (en) * | 1989-12-14 | 1993-07-06 | Applied Materials, Inc. | Magnetic semiconductor wafers with handling apparatus and method |
JPH04162610A (ja) * | 1990-10-26 | 1992-06-08 | Canon Inc | マスク保持装置 |
JP3182615B2 (ja) | 1991-04-15 | 2001-07-03 | アネルバ株式会社 | プラズマ処理方法および装置 |
JPH04358071A (ja) * | 1991-06-05 | 1992-12-11 | Mitsubishi Electric Corp | 真空処理装置 |
JPH0661336A (ja) | 1992-08-06 | 1994-03-04 | Ryoden Semiconductor Syst Eng Kk | ウエハの静電吸着装置 |
JP3265743B2 (ja) | 1993-09-16 | 2002-03-18 | 株式会社日立製作所 | 基板保持方法及び基板保持装置 |
JP3257328B2 (ja) * | 1995-03-16 | 2002-02-18 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
JPH09134892A (ja) | 1995-11-10 | 1997-05-20 | Sumitomo Electric Ind Ltd | 半導体ウエハのダイシング方法及び装置 |
JP2000036486A (ja) * | 1998-07-16 | 2000-02-02 | Toshiba Corp | プラズマ処理装置及び方法 |
EP1380898A1 (en) * | 2002-07-11 | 2004-01-14 | ASML Netherlands B.V. | Substrate holder and device manufacturing method |
US6864773B2 (en) * | 2003-04-04 | 2005-03-08 | Applied Materials, Inc. | Variable field magnet apparatus |
-
2004
- 2004-02-19 JP JP2004042323A patent/JP4386753B2/ja not_active Expired - Fee Related
-
2005
- 2005-02-08 GB GB0502460A patent/GB2411290B/en not_active Expired - Fee Related
- 2005-02-16 TW TW094104521A patent/TW200539258A/zh unknown
- 2005-02-18 KR KR1020050013735A patent/KR20060042099A/ko active IP Right Grant
- 2005-02-18 FR FR0501678A patent/FR2866752A1/fr active Pending
- 2005-02-19 US US10/906,435 patent/US7164571B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2411290A (en) | 2005-08-24 |
US7164571B2 (en) | 2007-01-16 |
FR2866752A1 (fr) | 2005-08-26 |
US20050185359A1 (en) | 2005-08-25 |
KR20060042099A (ko) | 2006-05-12 |
JP2005235970A (ja) | 2005-09-02 |
GB2411290B (en) | 2007-08-29 |
TW200539258A (en) | 2005-12-01 |
GB0502460D0 (en) | 2005-03-16 |
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