JP7095802B2 - 半導体装置および製造方法 - Google Patents
半導体装置および製造方法 Download PDFInfo
- Publication number
- JP7095802B2 JP7095802B2 JP2021514809A JP2021514809A JP7095802B2 JP 7095802 B2 JP7095802 B2 JP 7095802B2 JP 2021514809 A JP2021514809 A JP 2021514809A JP 2021514809 A JP2021514809 A JP 2021514809A JP 7095802 B2 JP7095802 B2 JP 7095802B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- contact
- trench
- semiconductor substrate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 162
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 114
- 239000011229 interlayer Substances 0.000 claims description 31
- 239000004020 conductor Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 12
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 238000003860 storage Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000036413 temperature sense Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0664—Vertical bipolar transistor in combination with diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Description
[先行技術文献]
[特許文献]
特許文献1 特開2010-147381号公報
特許文献2 特開2012-156564号公報
特許文献3 特開2010-147380号公報
Claims (10)
- 半導体基板と、
前記半導体基板の上面の上方に設けられたエミッタ電極と
を備え、
前記半導体基板は、
第1導電型のドリフト領域と、
前記ドリフト領域と前記半導体基板の上面との間に設けられた、第2導電型のベース領域と、
前記ベース領域と前記半導体基板の上面との間に設けられ、前記ベース領域よりもドーピング濃度の高い第2導電型のコンタクト領域と、
前記エミッタ電極に接続され、且つ、前記コンタクト領域を貫通して設けられた、導電材料のトレンチコンタクトと、
前記トレンチコンタクトの底部と接して設けられた、前記コンタクト領域よりもドーピング濃度の高い第2導電型の高濃度プラグ領域と
を有する半導体装置。 - 前記半導体基板の深さ方向において、前記高濃度プラグ領域の厚みは、前記コンタクト領域の厚みより小さい
請求項1に記載の半導体装置。 - 前記高濃度プラグ領域の下端は、前記ベース領域の下端よりも上側に配置されている
請求項2に記載の半導体装置。 - 前記半導体基板は、前記ベース領域と前記半導体基板の上面との間に設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域を更に有し、
前記コンタクト領域は、前記エミッタ領域よりも深い位置まで設けられている
請求項1から3のいずれか一項に記載の半導体装置。 - 前記半導体基板は、
前記半導体基板の上面から前記ドリフト領域まで設けられた複数のトレンチ部と、
前記複数のトレンチ部のうちの2つのトレンチ部に挟まれたメサ部と
を有し、
前記半導体装置は、トランジスタ部およびダイオード部を有し、
前記トランジスタ部は、前記ダイオード部と接する境界部を有し、
前記境界部の前記メサ部に、前記トレンチコンタクトおよび前記高濃度プラグ領域が設けられている
請求項1から4のいずれか一項に記載の半導体装置。 - 前記トレンチコンタクトおよび前記高濃度プラグ領域は、前記境界部以外の前記トランジスタ部にも設けられている
請求項5に記載の半導体装置。 - 前記トレンチコンタクトおよび前記高濃度プラグ領域は、前記ダイオード部にも設けられている
請求項5または6に記載の半導体装置。 - 前記トレンチ部は、
導電部と、
前記導電部および前記エミッタ電極の間に設けられた層間絶縁膜と
を有し、
前記エミッタ電極は、前記メサ部の上面に接触している
請求項5から7のいずれか一項に記載の半導体装置。 - 第1導電型のドリフト領域を有する半導体基板を備える半導体装置の製造方法であって、
前記ドリフト領域と前記半導体基板の上面との間に設けられた、第2導電型のベース領域と、前記ベース領域と前記半導体基板の上面との間に設けられ、前記ベース領域よりもドーピング濃度の高い第2導電型のコンタクト領域とを形成する段階と、
前記半導体基板の上面において前記コンタクト領域を貫通するコンタクト用トレンチを形成する段階と、
前記コンタクト用トレンチの底部と接し、前記コンタクト領域よりもドーピング濃度の高い第2導電型の高濃度プラグ領域を形成する段階と、
前記コンタクト用トレンチの内部に導電材料を設けて、トレンチコンタクトを形成する段階と
を備える製造方法。 - 前記半導体基板の上面から前記ドリフト領域まで設けられた複数のトレンチ部を形成する段階を更に備え、
前記複数のトレンチ部の内部と、前記半導体基板の上面に層間絶縁膜を形成し、且つ、前記半導体基板の上面の前記層間絶縁膜をエッチバックする段階と
を備える請求項9に記載の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022096433A JP7405186B2 (ja) | 2019-04-16 | 2022-06-15 | 半導体装置 |
JP2023209291A JP2024023631A (ja) | 2019-04-16 | 2023-12-12 | 半導体装置および製造方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019077535 | 2019-04-16 | ||
JP2019077535 | 2019-04-16 | ||
PCT/JP2020/006938 WO2020213254A1 (ja) | 2019-04-16 | 2020-02-20 | 半導体装置および製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022096433A Division JP7405186B2 (ja) | 2019-04-16 | 2022-06-15 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2020213254A1 JPWO2020213254A1 (ja) | 2021-10-14 |
JP7095802B2 true JP7095802B2 (ja) | 2022-07-05 |
Family
ID=72838195
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021514809A Active JP7095802B2 (ja) | 2019-04-16 | 2020-02-20 | 半導体装置および製造方法 |
JP2022096433A Active JP7405186B2 (ja) | 2019-04-16 | 2022-06-15 | 半導体装置 |
JP2023209291A Pending JP2024023631A (ja) | 2019-04-16 | 2023-12-12 | 半導体装置および製造方法 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022096433A Active JP7405186B2 (ja) | 2019-04-16 | 2022-06-15 | 半導体装置 |
JP2023209291A Pending JP2024023631A (ja) | 2019-04-16 | 2023-12-12 | 半導体装置および製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US11955540B2 (ja) |
EP (1) | EP3843132A4 (ja) |
JP (3) | JP7095802B2 (ja) |
KR (1) | KR102510937B1 (ja) |
WO (1) | WO2020213254A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116348995A (zh) * | 2021-05-19 | 2023-06-27 | 富士电机株式会社 | 半导体装置及制造方法 |
JPWO2022264697A1 (ja) * | 2021-06-18 | 2022-12-22 | ||
WO2023063411A1 (ja) * | 2021-10-15 | 2023-04-20 | 富士電機株式会社 | 半導体装置 |
JP2023136874A (ja) * | 2022-03-17 | 2023-09-29 | 株式会社東芝 | 半導体装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015079894A (ja) | 2013-10-17 | 2015-04-23 | 新電元工業株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2016115886A (ja) | 2014-12-17 | 2016-06-23 | 三菱電機株式会社 | 半導体装置 |
JP2017045911A (ja) | 2015-08-28 | 2017-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2017079251A (ja) | 2015-10-20 | 2017-04-27 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2018060984A (ja) | 2016-10-07 | 2018-04-12 | トヨタ自動車株式会社 | 半導体装置 |
JP2018133579A (ja) | 2018-04-18 | 2018-08-23 | ローム株式会社 | 半導体装置 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4581179B2 (ja) | 2000-04-26 | 2010-11-17 | 富士電機システムズ株式会社 | 絶縁ゲート型半導体装置 |
JP4829473B2 (ja) * | 2004-01-21 | 2011-12-07 | オンセミコンダクター・トレーディング・リミテッド | 絶縁ゲート型半導体装置およびその製造方法 |
US7629634B2 (en) * | 2008-02-23 | 2009-12-08 | Force Mos Technology Co., Ltd. | Trenched MOSFET with trenched source contact |
JP2010147381A (ja) | 2008-12-22 | 2010-07-01 | Denso Corp | 半導体装置の製造方法 |
JP2010147380A (ja) | 2008-12-22 | 2010-07-01 | Denso Corp | 半導体装置の製造方法 |
JP5637175B2 (ja) | 2008-12-24 | 2014-12-10 | 株式会社デンソー | 半導体装置 |
JP2010267863A (ja) | 2009-05-15 | 2010-11-25 | Denso Corp | 半導体装置 |
JP5537359B2 (ja) | 2010-09-15 | 2014-07-02 | 株式会社東芝 | 半導体装置 |
JP6406361B2 (ja) | 2015-02-03 | 2018-10-17 | 富士電機株式会社 | 半導体装置及びその製造方法 |
DE102015103072B4 (de) * | 2015-03-03 | 2021-08-12 | Infineon Technologies Ag | Halbleitervorrichtung mit grabenstruktur einschliesslich einer gateelektrode und einer kontaktstruktur fur ein diodengebiet |
JP6509673B2 (ja) * | 2015-08-10 | 2019-05-08 | 株式会社東芝 | 半導体装置 |
US10205012B2 (en) | 2016-03-11 | 2019-02-12 | Fuji Electric Co., Ltd. | Semiconductor device |
JP6885101B2 (ja) | 2016-03-11 | 2021-06-09 | 富士電機株式会社 | 半導体装置 |
JP6702423B2 (ja) | 2016-08-12 | 2020-06-03 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
DE112017000727T5 (de) | 2016-09-14 | 2018-10-31 | Fuji Electric Co., Ltd. | RC-IGBT und Herstellungsverfahren dafür |
WO2018056233A1 (ja) * | 2016-09-20 | 2018-03-29 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP7251914B2 (ja) | 2016-10-17 | 2023-04-04 | 富士電機株式会社 | 半導体装置 |
US10636877B2 (en) * | 2016-10-17 | 2020-04-28 | Fuji Electric Co., Ltd. | Semiconductor device |
JP2018092968A (ja) * | 2016-11-30 | 2018-06-14 | ルネサスエレクトロニクス株式会社 | 半導体装置、rc−igbt及び半導体装置の製造方法 |
JP6854654B2 (ja) | 2017-01-26 | 2021-04-07 | ローム株式会社 | 半導体装置 |
JP2018182254A (ja) * | 2017-04-21 | 2018-11-15 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US10600897B2 (en) * | 2017-11-08 | 2020-03-24 | Fuji Electric Co., Ltd. | Semiconductor device |
JP7056163B2 (ja) * | 2018-01-17 | 2022-04-19 | 富士電機株式会社 | 半導体装置 |
JP7263715B2 (ja) * | 2018-08-30 | 2023-04-25 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
US11995540B2 (en) * | 2018-10-11 | 2024-05-28 | International Business Machines Corporation | Online learning for dynamic Boltzmann machines with hidden units |
JP2023096841A (ja) * | 2021-12-27 | 2023-07-07 | 富士電機株式会社 | 半導体装置およびその製造方法 |
-
2020
- 2020-02-20 JP JP2021514809A patent/JP7095802B2/ja active Active
- 2020-02-20 EP EP20790892.2A patent/EP3843132A4/en active Pending
- 2020-02-20 WO PCT/JP2020/006938 patent/WO2020213254A1/ja unknown
- 2020-02-20 KR KR1020217009009A patent/KR102510937B1/ko active IP Right Grant
-
2021
- 2021-03-24 US US17/210,498 patent/US11955540B2/en active Active
-
2022
- 2022-06-15 JP JP2022096433A patent/JP7405186B2/ja active Active
-
2023
- 2023-12-12 JP JP2023209291A patent/JP2024023631A/ja active Pending
- 2023-12-26 US US18/395,756 patent/US20240128360A1/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015079894A (ja) | 2013-10-17 | 2015-04-23 | 新電元工業株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2016115886A (ja) | 2014-12-17 | 2016-06-23 | 三菱電機株式会社 | 半導体装置 |
JP2017045911A (ja) | 2015-08-28 | 2017-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2017079251A (ja) | 2015-10-20 | 2017-04-27 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2018060984A (ja) | 2016-10-07 | 2018-04-12 | トヨタ自動車株式会社 | 半導体装置 |
JP2018133579A (ja) | 2018-04-18 | 2018-08-23 | ローム株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2020213254A1 (ja) | 2020-10-22 |
JP2024023631A (ja) | 2024-02-21 |
US11955540B2 (en) | 2024-04-09 |
KR20210046773A (ko) | 2021-04-28 |
JPWO2020213254A1 (ja) | 2021-10-14 |
EP3843132A4 (en) | 2021-11-24 |
KR102510937B1 (ko) | 2023-03-15 |
US20240128360A1 (en) | 2024-04-18 |
US20210234027A1 (en) | 2021-07-29 |
JP2022123036A (ja) | 2022-08-23 |
EP3843132A1 (en) | 2021-06-30 |
JP7405186B2 (ja) | 2023-12-26 |
CN112823414A (zh) | 2021-05-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7095802B2 (ja) | 半導体装置および製造方法 | |
JP2020074396A (ja) | 半導体装置 | |
JP6885101B2 (ja) | 半導体装置 | |
JP6561611B2 (ja) | 半導体装置 | |
KR20180062379A (ko) | 반도체 장치, rc-igbt 및 반도체 장치의 제조 방법 | |
JP7456520B2 (ja) | 半導体装置 | |
JP7346889B2 (ja) | 半導体装置 | |
JP7211516B2 (ja) | 半導体装置 | |
JP7395844B2 (ja) | 半導体装置および製造方法 | |
JP6984749B2 (ja) | 半導体装置の製造方法および半導体装置 | |
JP6996621B2 (ja) | 半導体装置 | |
JP2020205408A (ja) | 半導体装置 | |
JP2018133493A (ja) | 半導体装置 | |
WO2018154963A1 (ja) | 半導体装置 | |
CN112823414B (zh) | 半导体装置及制造方法 | |
CN109037320B (zh) | 半导体器件及其制造方法 | |
WO2022044542A1 (ja) | 半導体装置および半導体装置の製造方法 | |
WO2021145079A1 (ja) | 半導体装置 | |
US20160049484A1 (en) | Semiconductor device | |
WO2020174799A1 (ja) | 半導体装置 | |
JP2023158315A (ja) | 半導体装置 | |
KR20230148503A (ko) | 절연게이트 양극성 트랜지스터 및 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210326 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210326 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220524 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220606 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7095802 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |