JP7056710B2 - 原子層堆積方法 - Google Patents

原子層堆積方法 Download PDF

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Publication number
JP7056710B2
JP7056710B2 JP2020160603A JP2020160603A JP7056710B2 JP 7056710 B2 JP7056710 B2 JP 7056710B2 JP 2020160603 A JP2020160603 A JP 2020160603A JP 2020160603 A JP2020160603 A JP 2020160603A JP 7056710 B2 JP7056710 B2 JP 7056710B2
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Japan
Prior art keywords
gas
raw material
film
material gas
chamber
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English (en)
Japanese (ja)
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JP2022053787A (ja
Inventor
直人 亀田
崇之 萩原
綾香 阿部
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Meidensha Corp
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Meidensha Corp
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Priority to JP2020160603A priority Critical patent/JP7056710B2/ja
Priority to PCT/JP2021/028526 priority patent/WO2022064849A1/ja
Priority to CN202180065452.6A priority patent/CN116209786B/zh
Publication of JP2022053787A publication Critical patent/JP2022053787A/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2020160603A 2020-09-25 2020-09-25 原子層堆積方法 Active JP7056710B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2020160603A JP7056710B2 (ja) 2020-09-25 2020-09-25 原子層堆積方法
PCT/JP2021/028526 WO2022064849A1 (ja) 2020-09-25 2021-08-02 原子層堆積方法
CN202180065452.6A CN116209786B (zh) 2020-09-25 2021-08-02 原子层沉积方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020160603A JP7056710B2 (ja) 2020-09-25 2020-09-25 原子層堆積方法

Publications (2)

Publication Number Publication Date
JP2022053787A JP2022053787A (ja) 2022-04-06
JP7056710B2 true JP7056710B2 (ja) 2022-04-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020160603A Active JP7056710B2 (ja) 2020-09-25 2020-09-25 原子層堆積方法

Country Status (3)

Country Link
JP (1) JP7056710B2 (zh)
CN (1) CN116209786B (zh)
WO (1) WO2022064849A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7431897B2 (ja) * 2022-07-20 2024-02-15 明電ナノプロセス・イノベーション株式会社 酸化膜形成方法
CN117568780A (zh) * 2023-11-16 2024-02-20 无锡松煜科技有限公司 一种利用ald法制备氧化铝钝化膜的方法及装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006324284A (ja) 2005-05-17 2006-11-30 Tdk Corp 電気化学キャパシタの製造方法
JP2007109984A (ja) 2005-10-14 2007-04-26 Meidensha Corp 酸化膜形成方法
JP2009044093A (ja) 2007-08-10 2009-02-26 Tokyo Electron Ltd 成膜方法、成膜装置及び記憶媒体
JP5206908B2 (ja) 2011-03-29 2013-06-12 凸版印刷株式会社 巻き取り成膜装置
JP2015525302A (ja) 2012-06-20 2015-09-03 エムティーエスナノテック株式会社Ｍｔｓ Ｎａｎｏｔｅｃｈ Ｉｎｃ． 原子層蒸着装置及びその方法
JP2016005900A (ja) 2014-05-27 2016-01-14 パナソニックＩｐマネジメント株式会社 ガスバリア膜、ガスバリア膜付きフィルム基板およびこれを備えた電子デバイス。
JP6052470B1 (ja) 2015-03-12 2016-12-27 株式会社明電舎 樹脂の改質方法
WO2020170482A1 (ja) 2019-02-19 2020-08-27 株式会社明電舎 原子層堆積方法および原子層堆積装置
WO2021038958A1 (ja) 2019-08-30 2021-03-04 株式会社明電舎 原子層堆積装置および原子層堆積方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100555582C (zh) * 2004-08-11 2009-10-28 株式会社明电舍 用于形成氧化物膜的方法和设备
JP4613587B2 (ja) * 2004-08-11 2011-01-19 株式会社明電舎 酸化膜形成方法とその装置
KR101435100B1 (ko) * 2012-06-20 2014-08-29 주식회사 엠티에스나노테크 원자층 증착 장치

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006324284A (ja) 2005-05-17 2006-11-30 Tdk Corp 電気化学キャパシタの製造方法
JP2007109984A (ja) 2005-10-14 2007-04-26 Meidensha Corp 酸化膜形成方法
JP2009044093A (ja) 2007-08-10 2009-02-26 Tokyo Electron Ltd 成膜方法、成膜装置及び記憶媒体
JP5206908B2 (ja) 2011-03-29 2013-06-12 凸版印刷株式会社 巻き取り成膜装置
JP2015525302A (ja) 2012-06-20 2015-09-03 エムティーエスナノテック株式会社Ｍｔｓ Ｎａｎｏｔｅｃｈ Ｉｎｃ． 原子層蒸着装置及びその方法
JP2016005900A (ja) 2014-05-27 2016-01-14 パナソニックＩｐマネジメント株式会社 ガスバリア膜、ガスバリア膜付きフィルム基板およびこれを備えた電子デバイス。
JP6052470B1 (ja) 2015-03-12 2016-12-27 株式会社明電舎 樹脂の改質方法
WO2020170482A1 (ja) 2019-02-19 2020-08-27 株式会社明電舎 原子層堆積方法および原子層堆積装置
WO2021038958A1 (ja) 2019-08-30 2021-03-04 株式会社明電舎 原子層堆積装置および原子層堆積方法

Also Published As

Publication number Publication date
JP2022053787A (ja) 2022-04-06
WO2022064849A1 (ja) 2022-03-31
CN116209786B (zh) 2024-04-30
CN116209786A (zh) 2023-06-02

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