JP7030515B2 - 逆導通半導体装置 - Google Patents
逆導通半導体装置 Download PDFInfo
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- JP7030515B2 JP7030515B2 JP2017533808A JP2017533808A JP7030515B2 JP 7030515 B2 JP7030515 B2 JP 7030515B2 JP 2017533808 A JP2017533808 A JP 2017533808A JP 2017533808 A JP2017533808 A JP 2017533808A JP 7030515 B2 JP7030515 B2 JP 7030515B2
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- 239000004065 semiconductor Substances 0.000 title description 8
- 239000010410 layer Substances 0.000 claims description 268
- 239000011241 protective layer Substances 0.000 claims description 45
- 230000007423 decrease Effects 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 11
- 230000000694 effects Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000009413 insulation Methods 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004514 thermodynamic simulation Methods 0.000 description 1
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Description
技術分野
本発明はパワーエレクトロニクスの分野、より特定的には請求項1の前文による逆導通MOS装置に関する。
US 8 212 283 B2においてバイモードの絶縁ゲートトランジスタ(BIGT)160の形態の逆導通絶縁ゲートバイポーラトランジスタ(RC-IGBT)が説明され(図1に示される)、共通の半導体チップ上にフリーホイールするダイオードと絶縁ゲートバイポーラトランジスタ(IGBT)を備え、チップの一部はドリフト層ドーピング濃度とドリフト層厚53を有する(n-)ドープされたドリフト層5を形成する。RC-IGBTはアノード側27(第2のメインサイド)とカソード側20(第1のメインサイド)を備え、アノード側27はチップのカソード側20の反対側に配置される。
本発明の目的はダイオードモードにおいて装置の改善されたターンオフ容量を有する逆導通MOS装置を提供することである。
図面の簡潔な説明
発明の主題は以下のテキストで添付の図面を参照してより詳細に説明される。
図5において金属酸化膜半導体電界効果トランジスタ(MOSFET)100の形態の発明の逆導通(RC)MOS(金属酸化膜半導体)装置1の第1の実施形態が示される。MOSFET100は第1のメインサイド20上に、MOSFETのためのソース電極である第1のメイン電極と、第1のメインサイドとは逆の第2のメインサイド上に、MOSFETのためのドレイン電極である第2のメイン電極25とを備える。装置は活性セル領域(MOSセル領域でもよい中心領域で、すなわちMOSセル11が配置される領域)と活性セル領域を装置の縁部14まで横方向に取り囲む終端領域を有する。縁部は装置の第1および第2のメインサイド20と27の間の装置の面として配置される。第1のメインサイド20は第1のメイン電極2に向かう側面上のドープされた層の面でもよい。第2のメイン電極25からより離れた平坦面でもよい。
1 逆導通MOS装置、100 MOSFET、150 逆導通絶縁ゲートバイポーラトランジスタ、160 従来技術BIGT、10 活性セル領域、11 MOSセル、12 終端領域、14 装置の縁部、2 第1のメイン電極、 20 第1のメインサイド、25 第2のメイン電極、27 第2のメインサイド、3 ソース層、4 ベース層、40 接触層、41 ベース領域、5 ドリフト層、50 第1の層、51 第1の領域、52 第1の領域幅、53 ドリフト層厚、54 バッファ層、55 第2の層、56 第2の領域、57 第2の領域幅、58 パイロット領域、580 アクティブ領域境界へのパイロット領域境界、59 パイロット領域幅、6 ゲート電極、62 ゲート層、64 第1の絶縁層、66 第2の絶縁層、67 第3の絶縁層、68 さらなる絶縁層、69 SIPOS層、7 変形可能な横方向ドーピング層、8 バー、9 保護層、90 リング形状領域、92 保護ゾーン。
Claims (15)
- 第1のメインサイド(20)上の第1のメイン電極(2)と、前記第1のメインサイド(20)とは反対側の第2のメインサイド(27)上の第2のメイン電極を有する逆導通MOS装置(1)であって、装置は活性セル領域(10)と前記活性セル領域(10)を前記装置の縁部(14)まで横方向に取り囲む終端領域(12)とを有し、
前記活性セル領域(10)は複数のMOSセル(11)を備え、MOSセルはそれぞれ前記第1および第2のメインサイド(20、27)の間に、第1の導電型のソース層(3)、前記第1の導電型とは異なる第2の導電型のベース層(4)、前記第1の導電型のドリフト層(5)および前記ドリフト層(5)よりも高くドープされた前記第1の導電型の第1の層(50)を備え、それぞれの前記MOSセル(11)内に前記第1のメインサイド(20)上にゲート電極(6)が配置され、
前記第1のメインサイド(20)上に、前記ベース層(4)よりも高い最大ドーピング濃度を有する第2導電型のバー領域(8)が前記活性セル領域(10)と前記終端領域(12)との間に配置され、前記第1のメインサイド(20)に平行な平面で前記活性セル領域(10)を取り囲み、前記バー領域は前記第1のメイン電極(2)に電気的に接続され、
前記第1のメインサイド(20)上で前記終端領域(12)内で前記第2の導電型の連続的な可変横方向ドーピング層(7)が配置され、前記可変横方向ドーピング層のすべての深さにおいてドーピング濃度は前記装置の前記縁部(14)に向かって減少し、前記可変横方向ドーピング層(7)は前記バー領域に接続され、前記第1のメインサイド(20)上で前記第2の導電型の保護層(9)が前記可変横方向ドーピング層(7)内に配置され、前記保護層(9)は、前記保護層(9)に接続された領域において前記可変横方向ドーピング層の最大ドーピング濃度よりも大きい最大ドーピング濃度を有し、前記可変横方向ドーピング層(7)のすべてのエリアは前記バー領域(8)および前記ベース層(4)を介して前記第1のメイン電極(2)に弱く接続され、これにより前記保護層(9)を前記第1のメイン電極(2)に弱く接続することを特徴とする、逆導通MOS装置(1)。 - 前記バー領域(8)は、前記バー領域(8)の最大面積の最大10%であるバー接触エリアにおいて前記ベース層(4)を介してまたは直接に、前記第1のメイン電極(2)と電気的に接続することを特徴とする、請求項1に記載の逆導通MOS装置(1)。
- 前記保護層(9)は前記活性セル領域(10)を取り囲む少なくとも1つのリング形状領域(90)を備えることを特徴とする、請求項1または2に記載の逆導通MOS装置(1)。
- 前記保護層(9)は、前記保護層(9)に接続された領域において前記可変横方向ドーピング層の最大ドーピング濃度よりも少なくとも10倍、100倍、あるいは1000倍高い最大ドーピング濃度を有することを特徴とする、請求項1から3のいずれか1項に記載の逆導通MOS装置(1)。
- 前記保護層(9)は最大5×1018cm-3または5×1016cm-3または5×1015cm-3の最大ドーピング濃度を有することを特徴とする、請求項1から4のいずれか1項に記載の逆導通MOS装置(1)。
- 前記バー領域(8)および前記保護層(9)は同一の最大ドーピング濃度と同一の厚みの少なくとも1つを有することを特徴とする、請求項1から5のいずれか1項に記載の逆導通MOS装置(1)。
- 前記バー領域(8)は10から200μmの間の幅を有することを特徴とする、請求項1から6のいずれか1項に記載の逆導通MOS装置(1)。
- 前記保護層(9)は最大20μmの幅を有することを特徴とする、請求項1から7のいずれか1項に記載の逆導通MOS装置(1)。
- 前記保護層(9)は、特に2つの隣接する保護ゾーン(92)の間の距離が最大50μmまたは最大20μmであるよう、前記活性セル領域(10)を取り囲む複数の保護ゾーン(92)を備えることを特徴とする、請求項1から8のいずれか1項に記載の逆導通MOS装置(1)。
- 前記保護層(9)は、前記保護層(9)のすべての深さにおいて前記装置の縁部(14)に向かって前記ドーピング濃度が減少する、可変横方向ドーピング層であることを特徴とする、請求項1から7のいずれか1項に記載の逆導通MOS装置(1)。
- 前記保護層(9)は少なくとも2つのリング形状領域(90)を備え、2つの隣接するリング形状領域(90)の間の距離は1から30μmの間にあることを特徴とする、請求項1から8のいずれか1項に記載の逆導通MOS装置(1)。
- 引き続くリング形状領域(90)の幅は前記装置の前記縁部(14)に向かう方向に減少することを特徴とする、請求項11に記載の逆導通MOS装置(1)。
- 前記保護層(9)は少なくとも3つのリング形状領域(90)を備え、引き続くリング形状領域(90)の間の距離は前記装置の前記縁部(14)に向かう方向に増加することを特徴とする、請求項1から12のいずれか1項に記載の逆導通MOS装置(1)。
- 前記終端領域(12)は半絶縁層(69)によって覆われることを特徴とする、請求項1から13のいずれか1項に記載の逆導通MOS装置(1)。
- 前記装置はMOSFET(100)または逆導通絶縁ゲートバイポーラトランジスタ(150)またはバイモード絶縁ゲートトランジスタであることを特徴とする、請求項1から14のいずれか1項に記載の逆導通MOS装置(1)。
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