JP7024022B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP7024022B2 JP7024022B2 JP2020135648A JP2020135648A JP7024022B2 JP 7024022 B2 JP7024022 B2 JP 7024022B2 JP 2020135648 A JP2020135648 A JP 2020135648A JP 2020135648 A JP2020135648 A JP 2020135648A JP 7024022 B2 JP7024022 B2 JP 7024022B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- transistor
- electrode
- oxide semiconductor
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 457
- 239000000758 substrate Substances 0.000 claims description 118
- 230000006870 function Effects 0.000 claims description 116
- 239000000463 material Substances 0.000 claims description 41
- 239000010408 film Substances 0.000 description 1075
- 239000001301 oxygen Substances 0.000 description 115
- 229910052760 oxygen Inorganic materials 0.000 description 115
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 106
- 238000000034 method Methods 0.000 description 95
- 239000010410 layer Substances 0.000 description 86
- 239000007789 gas Substances 0.000 description 84
- 239000004973 liquid crystal related substance Substances 0.000 description 71
- 230000003071 parasitic effect Effects 0.000 description 70
- 239000013078 crystal Substances 0.000 description 68
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 53
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 49
- 239000011701 zinc Substances 0.000 description 45
- 230000004888 barrier function Effects 0.000 description 40
- 238000004519 manufacturing process Methods 0.000 description 36
- 229910052581 Si3N4 Inorganic materials 0.000 description 35
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 34
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 30
- 229910052739 hydrogen Inorganic materials 0.000 description 29
- 239000001257 hydrogen Substances 0.000 description 29
- 239000012528 membrane Substances 0.000 description 29
- 229910052782 aluminium Inorganic materials 0.000 description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 27
- 239000002994 raw material Substances 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 230000007547 defect Effects 0.000 description 24
- 239000000203 mixture Substances 0.000 description 24
- 229910052757 nitrogen Inorganic materials 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- 206010021143 Hypoxia Diseases 0.000 description 23
- 239000002184 metal Substances 0.000 description 23
- 239000008188 pellet Substances 0.000 description 23
- 239000012535 impurity Substances 0.000 description 22
- 229910052814 silicon oxide Inorganic materials 0.000 description 22
- -1 tungsten nitride Chemical class 0.000 description 22
- 125000004429 atom Chemical group 0.000 description 21
- 229910052721 tungsten Inorganic materials 0.000 description 21
- 239000010937 tungsten Substances 0.000 description 21
- 239000010949 copper Substances 0.000 description 20
- 230000001965 increasing effect Effects 0.000 description 20
- 238000004544 sputter deposition Methods 0.000 description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 18
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 18
- 239000000523 sample Substances 0.000 description 18
- 239000010936 titanium Substances 0.000 description 18
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 17
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 17
- 239000000126 substance Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 16
- 229910052719 titanium Inorganic materials 0.000 description 16
- 239000000956 alloy Substances 0.000 description 15
- 229910000449 hafnium oxide Inorganic materials 0.000 description 15
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 15
- 229910045601 alloy Inorganic materials 0.000 description 14
- 229910021529 ammonia Inorganic materials 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 238000012545 processing Methods 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 229910001868 water Inorganic materials 0.000 description 13
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 12
- 238000004458 analytical method Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 12
- 239000011521 glass Substances 0.000 description 12
- 229910052750 molybdenum Inorganic materials 0.000 description 12
- 238000009832 plasma treatment Methods 0.000 description 12
- 230000001681 protective effect Effects 0.000 description 12
- 238000001039 wet etching Methods 0.000 description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 11
- 239000011733 molybdenum Substances 0.000 description 11
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 150000002431 hydrogen Chemical class 0.000 description 10
- 230000000903 blocking effect Effects 0.000 description 9
- 239000004020 conductor Substances 0.000 description 9
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical class 0.000 description 8
- 230000008054 signal transmission Effects 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 238000005477 sputtering target Methods 0.000 description 8
- 229910052715 tantalum Inorganic materials 0.000 description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 8
- 229910001316 Ag alloy Inorganic materials 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 230000005669 field effect Effects 0.000 description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 7
- 239000002159 nanocrystal Substances 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052783 alkali metal Inorganic materials 0.000 description 6
- 150000001340 alkali metals Chemical class 0.000 description 6
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 6
- 150000001342 alkaline earth metals Chemical class 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 238000002003 electron diffraction Methods 0.000 description 6
- 229910052735 hafnium Inorganic materials 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000012916 structural analysis Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 230000001186 cumulative effect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 5
- 229910052718 tin Chemical group 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 229910052706 scandium Inorganic materials 0.000 description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 229910001930 tungsten oxide Inorganic materials 0.000 description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910000583 Nd alloy Inorganic materials 0.000 description 3
- 229910007541 Zn O Inorganic materials 0.000 description 3
- 230000004075 alteration Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 3
- 201000003373 familial cold autoinflammatory syndrome 3 Diseases 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 229960001730 nitrous oxide Drugs 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910000914 Mn alloy Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000003463 adsorbent Substances 0.000 description 2
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000005354 aluminosilicate glass Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 210000002925 A-like Anatomy 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018507 Al—Ni Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910000979 O alloy Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910002668 Pd-Cu Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- ZCLBLRDCYNGAGV-UHFFFAOYSA-N [Si]=O.[Sn].[In] Chemical compound [Si]=O.[Sn].[In] ZCLBLRDCYNGAGV-UHFFFAOYSA-N 0.000 description 1
- UQDKMJGHCDDRBE-UHFFFAOYSA-N [Sn]=O.[In].[Si]=O Chemical compound [Sn]=O.[In].[Si]=O UQDKMJGHCDDRBE-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000011276 addition treatment Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 238000001362 electron spin resonance spectrum Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- NPEOKFBCHNGLJD-UHFFFAOYSA-N ethyl(methyl)azanide;hafnium(4+) Chemical group [Hf+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C NPEOKFBCHNGLJD-UHFFFAOYSA-N 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- CUZHTAHNDRTVEF-UHFFFAOYSA-N n-[bis(dimethylamino)alumanyl]-n-methylmethanamine Chemical compound [Al+3].C[N-]C.C[N-]C.C[N-]C CUZHTAHNDRTVEF-UHFFFAOYSA-N 0.000 description 1
- CRLLGLJOPXYTLX-UHFFFAOYSA-N neodymium silver Chemical compound [Ag].[Nd] CRLLGLJOPXYTLX-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/35—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being liquid crystals
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Ceramic Engineering (AREA)
- Theoretical Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
本実施の形態では、液晶表示装置の一画素の構成について、図1乃至図9を用いて説明する。
以下より、液晶表示装置において、上述の画素100と異なる構造を有する一画素の構成について、図7乃至図9を用いて説明する。
(実施の形態2)
本実施の形態では、本発明の一態様の半導体装置及び半導体装置の作製方法について、図10乃至図18を参照して説明する。
図14(C)は、本発明の一態様の半導体装置であるトランジスタ500の上面図であり、図14(B)は、図14(C)に示す一点鎖線X1-X2間における切断面の断面図、及び一点鎖線Y1-Y2間における切断面の断面図に相当する。また、図10(A)乃至図14(A)は、図14(B)に示すトランジスタ500の作製工程を説明する断面図である。
基板502の材質などに大きな制限はないが、少なくとも、後の熱処理に耐えうる程度の耐熱性を有している必要がある。例えば、ガラス基板、セラミック基板、石英基板、サファイア基板等を、基板502として用いてもよい。また、シリコンや炭化シリコンを材料とした単結晶半導体基板、多結晶半導体基板、シリコンゲルマニウム等の化合物半導体基板、SOI基板等を適用することも可能であり、これらの基板上に半導体素子が設けられたものを、基板502として用いてもよい。なお、基板502として、ガラス基板を用いる場合、第6世代、第7世代、第8世代、第9世代、第10世代等の大面積基板を用いることで、大型の表示装置を作製することができる。このような大面積基板を用いることで製造コストを低減させることができるため好ましい。
ゲート電極として機能する導電膜504、及びソース電極として機能する導電膜512a、及びドレイン電極として機能する導電膜512bとしては、クロム(Cr)、銅(Cu)、アルミニウム(Al)、金(Au)、銀(Ag)、亜鉛(Zn)、モリブデン(Mo)、タンタル(Ta)、チタン(Ti)、タングステン(W)、マンガン(Mn)、ニッケル(Ni)、鉄(Fe)、コバルト(Co)から選ばれた金属元素、または上述した金属元素を成分とする合金か、上述した金属元素を組み合わせた合金等を用いてそれぞれ形成することができる。
トランジスタ500のゲート絶縁膜として機能する絶縁膜506及び絶縁膜507としては、プラズマ化学気相堆積(PECVD:(Plasma Enhanced Chemical Vapor Deposition))法、スパッタリング法等により、酸化シリコン膜、酸化窒化シリコン膜、窒化酸化シリコン膜、窒化シリコン膜、酸化アルミニウム膜、酸化ハフニウム膜、酸化イットリウム膜、酸化ジルコニウム膜、酸化ガリウム膜、酸化タンタル膜、酸化マグネシウム膜、酸化ランタン膜、酸化セリウム膜及び酸化ネオジム膜を一種以上含む絶縁膜を、それぞれ用いることができる。なお、絶縁膜506及び絶縁膜507の積層構造とせずに、上述の材料から選択された単層の絶縁膜、または3層以上の絶縁膜を用いてもよい。
酸化物半導体膜508としては、先に示す材料を用いることができる。酸化物半導体膜508がIn-M-Zn酸化物の場合、In-M-Zn酸化物を成膜するために用いるスパッタリングターゲットの金属元素の原子数比は、In≧M、Zn≧Mを満たすことが好ましい。このようなスパッタリングターゲットの金属元素の原子数比として、In:M:Zn=1:1:1、In:M:Zn=1:1:1.2、In:M:Zn=2:1:3、In:M:Zn=3:1:2、In:M:Zn=4:2:4.1が好ましい。また、酸化物半導体膜508がIn-M-Zn酸化物の場合、スパッタリングターゲットとしては、多結晶のIn-M-Zn酸化物を含むターゲットを用いると好ましい。多結晶のIn-M-Zn酸化物を含むターゲットを用いることで、結晶性を有する酸化物半導体膜508を形成しやすくなる。なお、成膜される酸化物半導体膜508の原子数比はそれぞれ、誤差として上記のスパッタリングターゲットに含まれる金属元素の原子数比のプラスマイナス40%の変動を含む。例えば、スパッタリングターゲットとして、原子数比がIn:Ga:Zn=4:2:4.1を用いる場合、成膜される酸化物半導体膜508の原子数比は、In:Ga:Zn=4:2:3近傍となる場合がある。
絶縁膜514、516は、酸化物半導体膜508に酸素を供給する機能を有する。また、絶縁膜518は、トランジスタ500の保護絶縁膜としての機能を有する。また、絶縁膜514、516は、酸素を有する。また、絶縁膜514は、酸素を透過することのできる絶縁膜である。なお、絶縁膜514は、後に形成する絶縁膜516を形成する際の、酸化物半導体膜508へのダメージ緩和膜としても機能する。
次に、図14(B)(C)に示すトランジスタ500と異なる構成例について、図16(A)(B)を用いて説明する。なお、先に説明した機能と同様の機能を有する場合には、ハッチパターンを同じくし、特に符号を付さない場合がある。
次に、本発明の一態様の半導体装置であるトランジスタ500の作製方法について、図10(A)(B)(C)乃至図14(A)を用いて詳細に説明する。なお、図10(A)(B)(C)乃至図14(A)は、半導体装置の作製方法を説明する断面図である。
次に、図10(A)(B)(C)乃至図14(A)に示すトランジスタ500の作製方法と、異なる作製方法について、以下説明する。
次に、本発明の一態様であるトランジスタ570の作製方法について、図17(A)(B)(C)を用いて詳細に説明する。なお、図17(A)(B)(C)は、半導体装置の作製方法を説明する断面図である。
(実施の形態3)
本実施の形態では、本発明の一態様の半導体装置に含まれる酸化物半導体の構造について、詳細に説明を行う。
酸化物半導体は、単結晶酸化物半導体と、それ以外の非単結晶酸化物半導体とに分けられる。非単結晶酸化物半導体としては、CAAC-OS(C Axis Aligned Crystalline Oxide Semiconductor)、多結晶酸化物半導体、nc-OS(nanocrystalline Oxide Semiconductor)、擬似非晶質酸化物半導体(a-like OS:amorphous like Oxide Semiconductor)、非晶質酸化物半導体などがある。
まずは、CAAC-OSについて説明する。
次に、nc-OSについて説明する。
a-like OSは、nc-OSと非晶質酸化物半導体との間の構造を有する酸化物半導体である。
本実施の形態においては、先の実施の形態で例示したトランジスタを有する表示装置の一例について、図24乃至図26を用いて以下説明を行う。
本実施の形態では、本発明の一態様の半導体装置を有する表示モジュール及び電子機器について、図27及び図28を用いて説明を行う。
101 基板
103 走査線
105a 容量配線
105b 容量配線
107 ゲート絶縁膜
107a ゲート絶縁膜
107b ゲート絶縁膜
114 絶縁膜
116 絶縁膜
116a 絶縁膜
116b 絶縁膜
116c 絶縁膜
121 信号線
123 電極
125a 電極
125b 電極
135 半導体膜
135a 酸化物半導体膜
135b 酸化物半導体膜
136 トランジスタ
137 トランジスタ
139a 画素電極
139b 画素電極
140 容量素子
141 容量素子
142 液晶素子
143 液晶素子
144a 開口
144b 開口
145 容量素子
146 容量素子
148 画素電極
148a 酸化物導電体膜
148b 酸化物導電体膜
149 画素電極
200 画素
203 走査線
221 信号線
223a 電極
223b 電極
236 トランジスタ
237 トランジスタ
300 画素
301 基板
303 走査線
305a 容量配線
305b 容量配線
307 ゲート絶縁膜
316 絶縁膜
321 信号線
323a 電極
323b 電極
325a 電極
325b 電極
335 半導体膜
336 トランジスタ
337 トランジスタ
339a 画素電極
339b 画素電極
340 容量素子
341 容量素子
342 液晶素子
343 液晶素子
344a 開口
344b 開口
345a 電極
345b 電極
346a 開口
346b 開口
500 トランジスタ
502 基板
504 導電膜
506 絶縁膜
507 絶縁膜
508 酸化物半導体膜
508a 酸化物半導体膜
508b 酸化物半導体膜
509 酸化物半導体膜
509a 酸化物半導体膜
509b 酸化物半導体膜
512 導電膜
512a 導電膜
512b 導電膜
514 絶縁膜
516 絶縁膜
518 絶縁膜
519 絶縁膜
520 導電膜
520a 導電膜
520b 導電膜
531 バリア膜
536a マスク
536b マスク
538 エッチャント
539 エッチャント
540 酸素
540a 酸素
542 エッチャント
542a 開口部
542b 開口部
542c 開口部
570 トランジスタ
700 表示装置
701 基板
702 画素部
704 ソースドライバ回路部
705 基板
706 ゲートドライバ回路部
708 FPC端子部
710 配線
711 配線部
712 シール材
716 FPC
725 スリット
734 絶縁膜
736 着色層
736B 着色層
736G 着色層
736R 着色層
738 遮光膜
744 突起
746 配向膜
748 配向膜
750 トランジスタ
752 トランジスタ
760 接続電極
764 絶縁膜
766 絶縁膜
768 絶縁膜
770 平坦化絶縁膜
772 導電膜
774 導電膜
775 液晶素子
776 液晶層
778 構造体
780 異方性導電膜
790 容量素子
5000 筐体
5001 表示部
5002 表示部
5003 スピーカ
5004 LEDランプ
5005 操作キー
5006 接続端子
5007 センサ
5008 マイクロフォン
5009 スイッチ
5010 赤外線ポート
5011 記録媒体読込部
5012 支持部
5013 イヤホン
5014 アンテナ
5015 シャッターボタン
5016 受像部
5017 充電器
5100 ペレット
5120 基板
5161 領域
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8007 バックライト
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリ
Claims (2)
- 一画素に、第1のトランジスタと、第2のトランジスタと、前記第1のトランジスタと電気的に接続された第1の画素電極と、前記第2のトランジスタと電気的に接続された第2の画素電極と、を有し、
基板上に接し、前記第1のトランジスタのゲート電極として機能する領域と、前記第2のトランジスタのゲート電極として機能する領域とを有する第1の導電層と、
前記基板上に接し、前記第1の導電層と同じ材料を有する第2の導電層と、
前記第1の導電層上及び前記第2の導電層上のゲート絶縁膜と、
前記ゲート絶縁膜上に位置し、前記第1のトランジスタのチャネル形成領域と、前記第2のトランジスタのチャネル形成領域とを有する半導体膜と、
前記半導体膜上に位置し、前記第1のトランジスタのソース電極又はドレイン電極の一方として機能する領域と、前記第2のトランジスタのソース電極又はドレイン電極の一方として機能する領域とを有する第3の導電層と、
前記半導体膜上に位置し、前記第1のトランジスタのソース電極又はドレイン電極の他方として機能する領域を有する第4の導電層と、
前記第3の導電層及び前記第4の導電層上の第1の絶縁膜と、を有し、
前記第2の導電層は、前記第1の絶縁膜に設けられた第1のコンタクトホールと重なる領域と、前記ゲート絶縁膜に設けられた第2のコンタクトホールと重なる領域とを有し、
前記第4の導電層は、前記第1のコンタクトホールと重なる領域を有し、且つ前記第2のコンタクトホールと重ならず、
前記第1の画素電極は、前記第2のコンタクトホールと重なる領域を有する、半導体装置。 - 一画素に、第1のトランジスタと、第2のトランジスタと、前記第1のトランジスタと電気的に接続された第1の画素電極と、前記第2のトランジスタと電気的に接続された第2の画素電極と、を有し、
基板上に接し、前記第1のトランジスタのゲート電極として機能する領域と、前記第2のトランジスタのゲート電極として機能する領域とを有する第1の導電層と、
前記基板上に接し、前記第1の導電層と同じ材料を有する第2の導電層と、
前記第1の導電層上及び前記第2の導電層上のゲート絶縁膜と、
前記ゲート絶縁膜上に位置し、前記第1のトランジスタのチャネル形成領域と、前記第2のトランジスタのチャネル形成領域とを有する半導体膜と、
前記半導体膜上に位置し、前記第1のトランジスタのソース電極又はドレイン電極の一方として機能する領域と、前記第2のトランジスタのソース電極又はドレイン電極の一方として機能する領域とを有する第3の導電層と、
前記半導体膜上に位置し、前記第1のトランジスタのソース電極又はドレイン電極の他方として機能する領域を有する第4の導電層と、
前記第3の導電層及び前記第4の導電層上の第1の絶縁膜と、を有し、
前記第2の導電層は、前記第1の絶縁膜に設けられた第1のコンタクトホールと重なる領域と、前記ゲート絶縁膜に設けられた第2のコンタクトホールと重なる領域とを有し、
前記第4の導電層は、前記第1のコンタクトホールと重なる領域を有し、且つ前記第2のコンタクトホールと重ならず、
前記第1の画素電極は、前記第2のコンタクトホールと重なる領域を有し、
前記第1の画素電極及び前記第2の画素電極は、前記第1の絶縁膜上に位置する、半導体装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015024963 | 2015-02-12 | ||
JP2015024963 | 2015-02-12 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016574520A Division JP6749252B2 (ja) | 2015-02-12 | 2016-02-03 | 表示装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020164439A Division JP6827585B1 (ja) | 2015-02-12 | 2020-09-30 | 表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021002039A JP2021002039A (ja) | 2021-01-07 |
JP7024022B2 true JP7024022B2 (ja) | 2022-02-22 |
Family
ID=56615058
Family Applications (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016574520A Active JP6749252B2 (ja) | 2015-02-12 | 2016-02-03 | 表示装置 |
JP2020135648A Active JP7024022B2 (ja) | 2015-02-12 | 2020-08-11 | 半導体装置 |
JP2020164439A Active JP6827585B1 (ja) | 2015-02-12 | 2020-09-30 | 表示装置 |
JP2021006409A Active JP7108060B2 (ja) | 2015-02-12 | 2021-01-19 | 表示装置 |
JP2022113034A Active JP7341294B2 (ja) | 2015-02-12 | 2022-07-14 | 表示装置 |
JP2023138841A Pending JP2023165708A (ja) | 2015-02-12 | 2023-08-29 | 表示装置 |
JP2024074760A Active JP7506284B1 (ja) | 2015-02-12 | 2024-05-02 | 表示装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016574520A Active JP6749252B2 (ja) | 2015-02-12 | 2016-02-03 | 表示装置 |
Family Applications After (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020164439A Active JP6827585B1 (ja) | 2015-02-12 | 2020-09-30 | 表示装置 |
JP2021006409A Active JP7108060B2 (ja) | 2015-02-12 | 2021-01-19 | 表示装置 |
JP2022113034A Active JP7341294B2 (ja) | 2015-02-12 | 2022-07-14 | 表示装置 |
JP2023138841A Pending JP2023165708A (ja) | 2015-02-12 | 2023-08-29 | 表示装置 |
JP2024074760A Active JP7506284B1 (ja) | 2015-02-12 | 2024-05-02 | 表示装置 |
Country Status (4)
Country | Link |
---|---|
US (7) | US10539839B2 (ja) |
JP (7) | JP6749252B2 (ja) |
CN (6) | CN115542621A (ja) |
WO (1) | WO2016128860A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115542621A (zh) * | 2015-02-12 | 2022-12-30 | 株式会社半导体能源研究所 | 显示装置 |
JP6654997B2 (ja) * | 2016-11-10 | 2020-02-26 | 株式会社Joled | 薄膜トランジスタ基板 |
WO2018130930A1 (en) | 2017-01-16 | 2018-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
WO2018163944A1 (ja) * | 2017-03-08 | 2018-09-13 | シャープ株式会社 | 半導体装置、半導体装置の製造方法、及び、液晶表示装置 |
WO2018211351A1 (en) | 2017-05-19 | 2018-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and method for manufacturing semiconductor device |
CN107272293A (zh) * | 2017-08-21 | 2017-10-20 | 京东方科技集团股份有限公司 | 一种阵列基板及液晶显示装置 |
JP7245788B2 (ja) * | 2018-02-01 | 2023-03-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
CN207909879U (zh) * | 2018-03-28 | 2018-09-25 | 京东方科技集团股份有限公司 | 阵列基板、显示面板及显示装置 |
KR102509111B1 (ko) * | 2018-05-17 | 2023-03-13 | 삼성디스플레이 주식회사 | 표시 장치 |
CN110010626B (zh) * | 2019-04-11 | 2022-04-29 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示装置 |
CN110381409B (zh) * | 2019-08-13 | 2021-11-26 | 高创(苏州)电子有限公司 | 一种显示器的控制板、其驱动方法及显示器 |
CN112435629B (zh) | 2020-11-24 | 2023-04-18 | 京东方科技集团股份有限公司 | 一种显示基板、显示装置 |
CN113985667B (zh) * | 2021-10-12 | 2023-08-01 | Tcl华星光电技术有限公司 | 阵列基板及其制备方法、液晶显示面板 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008175882A (ja) | 2007-01-16 | 2008-07-31 | Hitachi Displays Ltd | 表示装置 |
US20090027578A1 (en) | 2007-07-26 | 2009-01-29 | You Hye-Ran | Display device and method of driving the same |
JP2012037890A (ja) | 2010-08-05 | 2012-02-23 | Samsung Electronics Co Ltd | 表示装置 |
JP2012123351A (ja) | 2010-12-06 | 2012-06-28 | Chunghwa Picture Tubes Ltd | 画素アレイ基板とその製造方法 |
JP2012145927A (ja) | 2010-12-20 | 2012-08-02 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JP2014029543A (ja) | 2013-09-16 | 2014-02-13 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
Family Cites Families (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56122123A (en) | 1980-03-03 | 1981-09-25 | Shunpei Yamazaki | Semiamorphous semiconductor |
GB2212659A (en) | 1987-11-20 | 1989-07-26 | Philips Electronic Associated | Multi-level circuit cross-overs |
JPH04326329A (ja) * | 1991-04-26 | 1992-11-16 | Sharp Corp | 液晶表示装置およびその製造方法 |
JPH05341322A (ja) | 1992-06-12 | 1993-12-24 | Hitachi Ltd | 薄膜トランジスタ基板、液晶表示パネルおよび液晶表示装置 |
KR19990001859A (ko) * | 1997-06-18 | 1999-01-15 | 윤종용 | 액정 표시 장치용 박막 트랜지스터 기판 |
JP3683463B2 (ja) | 1999-03-11 | 2005-08-17 | シャープ株式会社 | アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ |
JP3796072B2 (ja) | 1999-08-04 | 2006-07-12 | シャープ株式会社 | 透過型液晶表示装置 |
TW478014B (en) | 1999-08-31 | 2002-03-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing thereof |
WO2001071417A1 (fr) | 2000-03-21 | 2001-09-27 | Hitachi, Ltd. | Affichage a cristaux liquides |
JP3918496B2 (ja) | 2001-10-22 | 2007-05-23 | 株式会社日立製作所 | 液晶表示装置及びその製造方法 |
JP4004835B2 (ja) | 2002-04-02 | 2007-11-07 | 株式会社アドバンスト・ディスプレイ | 薄膜トランジスタアレイ基板の製造方法 |
JP4248306B2 (ja) | 2002-06-17 | 2009-04-02 | シャープ株式会社 | 液晶表示装置 |
KR100539833B1 (ko) * | 2002-10-21 | 2005-12-28 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이 기판 및 그 제조방법 |
CN2606376Y (zh) * | 2003-01-08 | 2004-03-10 | 广辉电子股份有限公司 | 像素结构 |
CN100483230C (zh) * | 2003-01-08 | 2009-04-29 | 友达光电股份有限公司 | 像素结构 |
KR100916605B1 (ko) * | 2003-03-07 | 2009-09-14 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
KR100913303B1 (ko) | 2003-05-06 | 2009-08-26 | 삼성전자주식회사 | 액정표시장치 |
JP4265788B2 (ja) | 2003-12-05 | 2009-05-20 | シャープ株式会社 | 液晶表示装置 |
CN100504553C (zh) | 2004-02-06 | 2009-06-24 | 三星电子株式会社 | 薄膜晶体管阵列面板及包括该薄膜晶体管阵列面板的液晶显示器 |
KR101039022B1 (ko) * | 2004-02-11 | 2011-06-03 | 삼성전자주식회사 | 접촉부 및 그의 제조 방법, 박막 트랜지스터 표시판 및그의 제조방법 |
ES1057932Y (es) | 2004-07-01 | 2005-01-16 | Mecadetol Sa | Poste movil para cartolas de cajas de carga. |
US7777825B2 (en) | 2004-12-14 | 2010-08-17 | Sharp Kabushiki Kaisha | Liquid crystal display and a defect correcting method for the same |
KR20060073826A (ko) | 2004-12-24 | 2006-06-29 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
JP2006184578A (ja) | 2004-12-27 | 2006-07-13 | Toshiba Matsushita Display Technology Co Ltd | 液晶表示装置及びその製造方法 |
TW200642268A (en) | 2005-04-28 | 2006-12-01 | Sanyo Electric Co | Compound semiconductor switching circuit device |
KR101216688B1 (ko) | 2005-05-02 | 2012-12-31 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 포함하는 액정 표시 장치 |
JP4703258B2 (ja) | 2005-05-16 | 2011-06-15 | シャープ株式会社 | 薄膜トランジスタ基板及び液晶表示パネル |
US7537976B2 (en) | 2005-05-20 | 2009-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor |
JP2007097074A (ja) | 2005-09-30 | 2007-04-12 | Pentax Corp | 撮像素子用清掃器具 |
EP1777690B1 (en) | 2005-10-18 | 2012-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
TWI283073B (en) | 2005-12-14 | 2007-06-21 | Au Optronics Corp | LCD device and fabricating method thereof |
KR101189279B1 (ko) | 2006-01-26 | 2012-10-09 | 삼성디스플레이 주식회사 | 표시장치와 이의 제조방법 |
JP4584332B2 (ja) * | 2006-02-24 | 2010-11-17 | シャープ株式会社 | アクティブマトリクス基板、表示装置、テレビジョン受像機 |
WO2007108181A1 (ja) | 2006-03-15 | 2007-09-27 | Sharp Kabushiki Kaisha | アクティブマトリクス基板、表示装置、テレビジョン受像機 |
CN101101913B (zh) * | 2006-07-06 | 2010-10-13 | 中华映管股份有限公司 | 薄膜晶体管阵列 |
JP2008089646A (ja) | 2006-09-29 | 2008-04-17 | Sharp Corp | 表示装置 |
TWI333564B (en) | 2006-11-10 | 2010-11-21 | Au Optronics Corp | Pixel structures of a color filter substrate, an active device array substrate, and a liquid crystal display panel |
KR101309434B1 (ko) * | 2006-12-05 | 2013-09-23 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
JP5081444B2 (ja) | 2006-12-21 | 2012-11-28 | 株式会社ジャパンディスプレイイースト | 表示装置 |
JP4851545B2 (ja) | 2007-02-09 | 2012-01-11 | シャープ株式会社 | アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法、液晶パネルの製造方法 |
CN101281311A (zh) * | 2007-04-04 | 2008-10-08 | 中华映管股份有限公司 | 像素结构及其驱动方法 |
TWI361329B (en) | 2007-04-10 | 2012-04-01 | Au Optronics Corp | Array substrate and method for manufacturing the same |
TWI352866B (en) | 2007-04-12 | 2011-11-21 | Wintek Corp | Liquid crystal display and active matrix substrate |
CN101030588A (zh) * | 2007-04-24 | 2007-09-05 | 友达光电股份有限公司 | 阵列基板及其制造方法 |
JP5542296B2 (ja) | 2007-05-17 | 2014-07-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置、表示モジュール及び電子機器 |
JP5116359B2 (ja) | 2007-05-17 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP5542297B2 (ja) | 2007-05-17 | 2014-07-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置、表示モジュール及び電子機器 |
CN101646975B (zh) | 2007-06-28 | 2011-11-23 | 夏普株式会社 | 有源矩阵基板、液晶面板、液晶显示单元、液晶显示装置、电视接收机、液晶面板的制造方法 |
US9176353B2 (en) | 2007-06-29 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
CN201069506Y (zh) * | 2007-07-30 | 2008-06-04 | 上海广电光电子有限公司 | 液晶显示装置 |
EP2073255B1 (en) | 2007-12-21 | 2016-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Diode and display device comprising the diode |
JP2009180981A (ja) | 2008-01-31 | 2009-08-13 | Mitsubishi Electric Corp | アクティブマトリックス基板及びその製造方法 |
JP5113609B2 (ja) | 2008-04-24 | 2013-01-09 | パナソニック液晶ディスプレイ株式会社 | 表示装置及びその製造方法 |
CN101604695B (zh) * | 2008-06-10 | 2011-03-23 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法和液晶显示装置 |
JP2010003723A (ja) | 2008-06-18 | 2010-01-07 | Toppan Printing Co Ltd | 薄膜トランジスタ及び薄膜トランジスタアレイ並びに画像表示装置 |
KR101273913B1 (ko) | 2008-09-19 | 2013-06-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR20100067612A (ko) | 2008-12-11 | 2010-06-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 및 표시 장치 |
JP4743348B2 (ja) | 2009-03-17 | 2011-08-10 | 凸版印刷株式会社 | 薄膜トランジスタアレイおよび薄膜トランジスタアレイを用いた画像表示装置 |
JP5337603B2 (ja) * | 2009-07-08 | 2013-11-06 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
US8665192B2 (en) * | 2009-07-08 | 2014-03-04 | Hitachi Displays, Ltd. | Liquid crystal display device |
US8598586B2 (en) | 2009-12-21 | 2013-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
KR20230155614A (ko) * | 2010-02-26 | 2023-11-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 |
CN201876642U (zh) * | 2010-03-19 | 2011-06-22 | 华映视讯(吴江)有限公司 | 像素结构 |
KR101808213B1 (ko) * | 2010-04-21 | 2018-01-19 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
CN102156367B (zh) | 2010-08-04 | 2013-06-19 | 京东方科技集团股份有限公司 | 阵列基板、液晶面板和液晶显示器 |
US8975638B2 (en) | 2010-12-28 | 2015-03-10 | Sharp Kabushiki Kaisha | High-performance active matrix substrate with high signal quality |
KR20120124011A (ko) * | 2011-05-02 | 2012-11-12 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
DE102013216824A1 (de) * | 2012-08-28 | 2014-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
CN102867823B (zh) * | 2012-09-27 | 2015-05-27 | 合肥京东方光电科技有限公司 | 阵列基板及其制作方法、显示装置 |
JP2014089444A (ja) * | 2012-10-05 | 2014-05-15 | Semiconductor Energy Lab Co Ltd | 表示装置及び電子機器 |
US9905585B2 (en) | 2012-12-25 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising capacitor |
KR102083433B1 (ko) | 2013-07-12 | 2020-03-03 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR20230010833A (ko) * | 2013-12-02 | 2023-01-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
CN115542621A (zh) * | 2015-02-12 | 2022-12-30 | 株式会社半导体能源研究所 | 显示装置 |
-
2016
- 2016-02-03 CN CN202211147382.1A patent/CN115542621A/zh active Pending
- 2016-02-03 US US15/545,411 patent/US10539839B2/en active Active
- 2016-02-03 CN CN201680009371.3A patent/CN107209429B/zh active Active
- 2016-02-03 CN CN202210029583.5A patent/CN114326211A/zh active Pending
- 2016-02-03 CN CN202210029672.XA patent/CN114185216A/zh active Pending
- 2016-02-03 WO PCT/IB2016/050534 patent/WO2016128860A1/ja active Application Filing
- 2016-02-03 CN CN202110651156.6A patent/CN113341624A/zh active Pending
- 2016-02-03 CN CN202010788172.5A patent/CN111830758B/zh active Active
- 2016-02-03 JP JP2016574520A patent/JP6749252B2/ja active Active
-
2019
- 2019-11-27 US US16/698,426 patent/US10824028B2/en active Active
-
2020
- 2020-08-11 JP JP2020135648A patent/JP7024022B2/ja active Active
- 2020-09-30 JP JP2020164439A patent/JP6827585B1/ja active Active
- 2020-10-02 US US17/061,870 patent/US11092856B2/en active Active
- 2020-10-02 US US17/061,876 patent/US11187944B2/en active Active
-
2021
- 2021-01-19 JP JP2021006409A patent/JP7108060B2/ja active Active
- 2021-05-21 US US17/326,675 patent/US11493808B2/en active Active
-
2022
- 2022-07-14 JP JP2022113034A patent/JP7341294B2/ja active Active
- 2022-09-21 US US17/949,396 patent/US11796866B2/en active Active
-
2023
- 2023-08-29 JP JP2023138841A patent/JP2023165708A/ja active Pending
- 2023-10-17 US US18/380,817 patent/US20240061292A1/en active Pending
-
2024
- 2024-05-02 JP JP2024074760A patent/JP7506284B1/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008175882A (ja) | 2007-01-16 | 2008-07-31 | Hitachi Displays Ltd | 表示装置 |
US20090027578A1 (en) | 2007-07-26 | 2009-01-29 | You Hye-Ran | Display device and method of driving the same |
JP2012037890A (ja) | 2010-08-05 | 2012-02-23 | Samsung Electronics Co Ltd | 表示装置 |
JP2012123351A (ja) | 2010-12-06 | 2012-06-28 | Chunghwa Picture Tubes Ltd | 画素アレイ基板とその製造方法 |
JP2012145927A (ja) | 2010-12-20 | 2012-08-02 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JP2014029543A (ja) | 2013-09-16 | 2014-02-13 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7024022B2 (ja) | 半導体装置 | |
JP6866432B2 (ja) | 半導体装置 | |
JP6944003B2 (ja) | 半導体装置の作製方法 | |
JP6905575B2 (ja) | 半導体装置の作製方法 | |
JP6994554B2 (ja) | 半導体装置、表示装置、及び表示モジュール | |
JP6818097B2 (ja) | トランジスタの作製方法 | |
JP6868059B2 (ja) | 半導体装置 | |
JP2022027808A (ja) | 半導体装置 | |
JP2020178127A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200903 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200903 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210514 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210615 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210811 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220125 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220209 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7024022 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |