JP4584332B2 - アクティブマトリクス基板、表示装置、テレビジョン受像機 - Google Patents
アクティブマトリクス基板、表示装置、テレビジョン受像機 Download PDFInfo
- Publication number
- JP4584332B2 JP4584332B2 JP2008501612A JP2008501612A JP4584332B2 JP 4584332 B2 JP4584332 B2 JP 4584332B2 JP 2008501612 A JP2008501612 A JP 2008501612A JP 2008501612 A JP2008501612 A JP 2008501612A JP 4584332 B2 JP4584332 B2 JP 4584332B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- electrode
- active matrix
- matrix substrate
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 177
- 239000011159 matrix material Substances 0.000 title claims description 116
- 239000010409 thin film Substances 0.000 claims description 212
- 239000010408 film Substances 0.000 claims description 133
- 239000004065 semiconductor Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 35
- 239000011521 glass Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 127
- 239000004973 liquid crystal related substance Substances 0.000 description 54
- 238000000034 method Methods 0.000 description 50
- 230000008569 process Effects 0.000 description 29
- 239000003990 capacitor Substances 0.000 description 27
- 238000003860 storage Methods 0.000 description 24
- 230000008859 change Effects 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 230000003071 parasitic effect Effects 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 238000006073 displacement reaction Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 239000004925 Acrylic resin Substances 0.000 description 8
- 229920000178 Acrylic resin Polymers 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000005401 electroluminescence Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000059 patterning Methods 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229910018540 Si C Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- -1 polysiloxane Polymers 0.000 description 2
- 229920005749 polyurethane resin Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012887 quadratic function Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
Description
4 TFT(トランジスタ)
6 ドレイン電極
9 薄膜部
9x・9y 薄膜部のエッジ
10 透明絶縁性基板
11 ゲート電極
25 ソース電極
26 第1のドレイン電極部
30 ゲート絶縁膜
36 第2のドレイン電極部
12 第1ゲート絶縁層(平坦化膜 SOG膜)
13 第2ゲート絶縁層
100 画素領域
509 液晶表示装置(表示装置)
601 テレビジョン受像機
図3は、本実施の形態に係るアクティブマトリクス基板の画素領域の構成を示す平面図であり、図4は、図3におけるTFT部分の拡大平面図である。図3・4に示すように、画素領域100には、画素電極1およびTFT(薄膜トランジスタ)4が備えられる。画素電極1の周囲には、互いに直交する走査信号線2およびデータ信号線3が設けられ、また、画素電極1を走査信号線方向に横切るように保持容量配線22が設けられている。TFT4は、走査信号線2およびデータ信号線3の交差部分近傍に設けられる。
上記のとおり、本願構成1(薄膜部を、ゲート電極を利用して形成する構成)・本願構成2(向かい合う第1および第2のドレイン電極部を備え、第1のドレイン電極部が薄膜部の一方のエッジと重畳し、第2のドレイン電極部が薄膜部のもう一方のエッジと重畳している構成)それぞれが、基板内におけるCgdばらつきの抑制効果をもたらす。したがって、本願構成1のみを備えるアクティブマトリクス基板も当然に本発明の実施の形態に含まれる。
上記のとおり、本願構成1および本願構成2それぞれが、基板内におけるCgdばらつきの抑制効果をもたらす。したがって、本願構成2のみを備えるアクティブマトリクス基板も当然に本発明の実施の形態に含まれる。
Claims (20)
- 薄膜トランジスタを備えたアクティブマトリクス基板であって、
前記薄膜トランジスタは、ゲート電極を覆うゲート絶縁膜と、前記ゲート絶縁膜上の半導体層と、前記半導体層上のソース電極と、前記ソース電極の両側に配された第1および第2ドレイン電極部とを有し、
前記ゲート絶縁膜は、前記ゲート電極と重なる薄膜部と、これよりも膜厚の大きな非薄膜部とを有し、
前記薄膜部は向かい合う2つのエッジを有する形状であり、その一方のエッジと前記第1ドレイン電極部とが重なるとともに、もう一方のエッジと前記第2ドレイン電極部とが重なることを特徴とするアクティブマトリクス基板。 - 前記第1および第2ドレイン電極部が互いに線対称の形状であることを特徴とする請求項1記載のアクティブマトリクス基板。
- 前記第1および第2ドレイン電極部の対称軸上に前記ソース電極が伸びていることを特徴とする請求項2記載のアクティブマトリクス基板。
- 前記ゲート電極は向かい合う2つのエッジを有する形状であり、前記ゲート電極の一方のエッジ上に前記薄膜部の一方のエッジが位置するとともに、前記ゲート電極の他方のエッジ上に前記薄膜部の他方のエッジが位置することを特徴とする請求項1記載のアクティブマトリクス基板。
- 前記ゲート電極は向かい合う2つのエッジを有する形状であり、前記ゲート電極の一方のエッジから所定距離だけ内側にあって前記エッジに沿う線上に前記薄膜部の一方のエッジが位置するとともに、前記ゲート電極の他方のエッジから略前記所定距離だけ内側にあって前記エッジに沿う線上に前記薄膜部の他方のエッジが位置することを特徴とする請求項1記載のアクティブマトリクス基板。
- 前記薄膜トランジスタはさらに第3ドレイン電極部を有し、
前記ソース電極は向かい合う2つの部分からなるとともに、これら2つの部分の間に前記第3ドレイン電極部が配されていることを特徴とする請求項1記載のアクティブマトリクス基板。 - 前記非薄膜部は複数のゲート絶縁層からなり、薄膜部も前記複数のゲート絶縁層からなり、前記複数のゲート絶縁層の少なくとも1つについては、非薄膜部に対応する領域の膜厚よりも薄膜部に対応する領域の膜厚の方が小さくなっていることを特徴とする請求項1記載のアクティブマトリクス基板。
- 前記非薄膜部は複数のゲート絶縁層からなり、薄膜部は、前記複数のゲート絶縁層の少なくとも1つが除去されてなることを特徴とする請求項1記載のアクティブマトリクス基板。
- 前記非薄膜部の最下層のゲート絶縁層は平坦化膜であり、薄膜部では前記平坦化膜が除去されていることを特徴とする請求項8に記載のアクティブマトリクス基板。
- 前記平坦化膜がスピンオンガラス(SOG)材料からなることを特徴とする請求項9に記載のアクティブマトリクス基板。
- 前記平坦化膜の基板面に接する部分の厚みが、基板面に形成されるゲート電極の厚みよりも大きいことを特徴とする請求項9に記載のアクティブマトリクス基板。
- 前記非薄膜部は、薄膜部との境界近傍が順テーパ形状となっていることを特徴とする請求項1記載のアクティブマトリクス基板。
- 前記薄膜部は長方形形状であり、長手方向の2辺が、薄膜部の前記2つのエッジに相当することを特徴とする請求項1記載のアクティブマトリクス基板。
- 第1および第2ドレイン電極部は、薄膜部の各エッジに沿う方向に延伸する形状であることを特徴とする請求項1記載のアクティブマトリクス基板。
- 第1ドレイン電極部は、前記薄膜部の各エッジに沿う方向に延伸し、薄膜部上に位置する延伸部と、前記延伸部よりソース電極から離れる向きに延伸し、薄膜部の一方のエッジを跨ぐ連結部とを備え、
第2ドレイン電極部も、前記薄膜部の各エッジに沿う方向に延伸し、薄膜部上に位置する延伸部と、前記延伸部よりソース電極から離れる向きに延伸し、薄膜部の他方のエッジを跨ぐ連結部とを備えることを特徴とする請求項1記載のアクティブマトリクス基板。 - 前記ゲート電極は長方形形状であり、長手方向の2辺が、ゲート電極の前記2つのエッジに相当することを特徴とする請求項4記載のアクティブマトリクス基板。
- 前記複数のゲート絶縁層の少なくとも1つに有機物が含まれることを特徴とする請求項8に記載のアクティブマトリクス基板。
- 1つの画素領域に、第1薄膜トランジスタに接続された第1画素電極と、第2薄膜トランジスタに接続された第2画素電極とが設けられ、第1および第2薄膜トランジスタは共通のゲート電極を有するアクティブマトリクス基板であって、
前記第1および第2薄膜トランジスタは、前記共通のゲート電極を覆うゲート絶縁膜と、前記ゲート絶縁膜上の半導体層と、前記半導体層上の共通のソース電極とを有し、
前記第1薄膜トランジスタは、前記共通のソース電極の一方側に配された第1ドレイン電極部を有し、前記第2薄膜トランジスタは、前記共通のソース電極のもう一方側に配された第2ドレイン電極部を有し、
前記ゲート絶縁膜は、前記共通のゲート電極と重なる薄膜部と、これよりも膜厚の大きな非薄膜部とを有し、
前記薄膜部が向かい合う2つのエッジを有する形状であるとともに、その一方のエッジと前記第1薄膜トランジスタの第1ドレイン電極部とが重なり、もう一方のエッジと前記第2薄膜トランジスタの第2ドレイン電極部とが重なることを特徴とするアクティブマトリクス基板。 - 請求項1〜18のいずれか1項に記載のアクティブマトリクス基板を備えることを特徴とする表示装置。
- 請求項19に記載の表示装置と、テレビジョン放送を受信するチューナ部とを備えていることを特徴とするテレビジョン受像機。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006049363 | 2006-02-24 | ||
JP2006049363 | 2006-02-24 | ||
PCT/JP2006/322151 WO2007097074A1 (ja) | 2006-02-24 | 2006-11-07 | アクティブマトリクス基板、表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法、ゲート絶縁膜形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2007097074A1 JPWO2007097074A1 (ja) | 2009-07-09 |
JP4584332B2 true JP4584332B2 (ja) | 2010-11-17 |
Family
ID=38437130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008501612A Expired - Fee Related JP4584332B2 (ja) | 2006-02-24 | 2006-11-07 | アクティブマトリクス基板、表示装置、テレビジョン受像機 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8168980B2 (ja) |
JP (1) | JP4584332B2 (ja) |
CN (1) | CN101384949A (ja) |
WO (1) | WO2007097074A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5130711B2 (ja) * | 2006-12-26 | 2013-01-30 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法 |
JP5162232B2 (ja) * | 2007-12-27 | 2013-03-13 | パナソニック液晶ディスプレイ株式会社 | 表示装置 |
JP2010206154A (ja) * | 2009-02-09 | 2010-09-16 | Hitachi Displays Ltd | 表示装置 |
KR20120071398A (ko) * | 2009-09-16 | 2012-07-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
JP5347071B2 (ja) * | 2010-12-27 | 2013-11-20 | シャープ株式会社 | アクティブマトリクス基板の製造方法及びその方法により製造されたアクティブマトリクス基板、並びに表示パネル |
FR2976127B1 (fr) * | 2011-06-01 | 2014-01-10 | Commissariat Energie Atomique | Composant organique a electrodes ayant un agencement et une forme ameliores |
WO2013008441A1 (ja) * | 2011-07-12 | 2013-01-17 | シャープ株式会社 | アクティブマトリクス基板及びその製造方法 |
KR102039725B1 (ko) | 2012-11-23 | 2019-11-04 | 엘지디스플레이 주식회사 | 액정표시장치 어레이 기판 및 그 제조방법 |
CN103178119B (zh) * | 2013-03-25 | 2015-07-29 | 京东方科技集团股份有限公司 | 阵列基板、阵列基板制备方法以及显示装置 |
KR102086422B1 (ko) * | 2013-03-28 | 2020-03-10 | 삼성디스플레이 주식회사 | 표시패널 및 이의 제조방법 |
CN115542621A (zh) * | 2015-02-12 | 2022-12-30 | 株式会社半导体能源研究所 | 显示装置 |
TWI560857B (en) * | 2015-02-17 | 2016-12-01 | Innolux Corp | Thin film transistor substrate and display panel comprising the same |
JP6501879B2 (ja) * | 2015-06-05 | 2019-04-17 | シャープ株式会社 | アクティブマトリクス基板、液晶パネル、および、アクティブマトリクス基板の製造方法 |
KR102519516B1 (ko) * | 2015-12-18 | 2023-04-06 | 엘지디스플레이 주식회사 | 액정 표시 장치 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01300567A (ja) * | 1988-05-30 | 1989-12-05 | Seikosha Co Ltd | 非晶質シリコン薄膜トランジスタおよびその製造方法 |
JPH09179141A (ja) * | 1995-12-21 | 1997-07-11 | Fujitsu Ltd | 液晶表示パネル |
JPH10102003A (ja) * | 1996-10-03 | 1998-04-21 | Nippon Steel Corp | 絶縁膜および絶縁膜形成用塗布液 |
JP2005159331A (ja) * | 2003-10-28 | 2005-06-16 | Semiconductor Energy Lab Co Ltd | 液晶表示装置及びその作製方法、並びに液晶テレビ受像機 |
JP2005223254A (ja) * | 2004-02-09 | 2005-08-18 | Sharp Corp | 薄膜トランジスタ |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61225869A (ja) | 1985-03-29 | 1986-10-07 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ装置とその製造方法 |
JPH01234831A (ja) | 1988-03-15 | 1989-09-20 | Casio Comput Co Ltd | 信号蓄積キャパシタ付薄膜トランジスタ |
JPH0350526A (ja) | 1989-07-19 | 1991-03-05 | Hitachi Ltd | 液晶表示装置 |
JPH0351819A (ja) | 1989-07-20 | 1991-03-06 | Hitachi Ltd | 液晶表示装置 |
JP2812346B2 (ja) | 1992-01-27 | 1998-10-22 | 日本電気株式会社 | 液晶表示装置及びその製造方法 |
JP2956380B2 (ja) | 1992-09-28 | 1999-10-04 | 日本電気株式会社 | 薄膜トランジスタアレイおよびその製造方法 |
US5380555A (en) * | 1993-02-09 | 1995-01-10 | Dow Corning Toray Silicone Co., Ltd. | Methods for the formation of a silicon oxide film |
JPH0728087A (ja) | 1993-07-08 | 1995-01-31 | Sharp Corp | 液晶表示装置およびその製造方法 |
JPH07114044A (ja) | 1993-10-19 | 1995-05-02 | Sanyo Electric Co Ltd | 液晶表示装置の製造方法 |
US6265249B1 (en) * | 1994-03-01 | 2001-07-24 | Industrial Technology Research Institute | Method of manufacturing thin film transistors |
JPH08328038A (ja) | 1995-06-01 | 1996-12-13 | Casio Comput Co Ltd | アクティブマトリクス表示装置 |
KR970011972A (ko) * | 1995-08-11 | 1997-03-29 | 쯔지 하루오 | 투과형 액정 표시 장치 및 그 제조 방법 |
US5767929A (en) * | 1995-09-21 | 1998-06-16 | Advanced Display Inc. | Liquid crystal display apparatus with shorting ring |
US5721164A (en) * | 1996-11-12 | 1998-02-24 | Industrial Technology Research Institute | Method of manufacturing thin film transistors |
JPH1115024A (ja) | 1997-06-24 | 1999-01-22 | Casio Comput Co Ltd | アクティブマトリクス型表示装置 |
JP3335567B2 (ja) | 1997-10-17 | 2002-10-21 | シャープ株式会社 | アクティブマトリクス型液晶表示装置およびその欠陥修正方法 |
JP2001098224A (ja) | 1999-09-28 | 2001-04-10 | Hitachi Chem Co Ltd | シリカ系被膜、シリカ系被膜の形成方法及びシリカ系被膜を有する電子部品 |
US6566685B2 (en) * | 2000-04-12 | 2003-05-20 | Casio Computer Co., Ltd. | Double gate photo sensor array |
JP4100278B2 (ja) | 2003-07-15 | 2008-06-11 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法 |
US8101467B2 (en) * | 2003-10-28 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same, and liquid crystal television receiver |
JP4682295B2 (ja) | 2004-02-10 | 2011-05-11 | 奇美電子股▲ふん▼有限公司 | 液晶表示装置 |
US7864281B2 (en) | 2004-08-24 | 2011-01-04 | Sharp Kabushiki Kaisha | Active matrix substrate and display unit provided with it |
US7868960B2 (en) * | 2006-02-24 | 2011-01-11 | Sharp Kabushiki Kaisha | Active matrix substrate, display device, and television receiver |
-
2006
- 2006-11-07 CN CN200680053309.0A patent/CN101384949A/zh active Pending
- 2006-11-07 WO PCT/JP2006/322151 patent/WO2007097074A1/ja active Application Filing
- 2006-11-07 JP JP2008501612A patent/JP4584332B2/ja not_active Expired - Fee Related
- 2006-11-07 US US12/162,042 patent/US8168980B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01300567A (ja) * | 1988-05-30 | 1989-12-05 | Seikosha Co Ltd | 非晶質シリコン薄膜トランジスタおよびその製造方法 |
JPH09179141A (ja) * | 1995-12-21 | 1997-07-11 | Fujitsu Ltd | 液晶表示パネル |
JPH10102003A (ja) * | 1996-10-03 | 1998-04-21 | Nippon Steel Corp | 絶縁膜および絶縁膜形成用塗布液 |
JP2005159331A (ja) * | 2003-10-28 | 2005-06-16 | Semiconductor Energy Lab Co Ltd | 液晶表示装置及びその作製方法、並びに液晶テレビ受像機 |
JP2005223254A (ja) * | 2004-02-09 | 2005-08-18 | Sharp Corp | 薄膜トランジスタ |
Also Published As
Publication number | Publication date |
---|---|
JPWO2007097074A1 (ja) | 2009-07-09 |
US8168980B2 (en) | 2012-05-01 |
CN101384949A (zh) | 2009-03-11 |
WO2007097074A1 (ja) | 2007-08-30 |
US20090057682A1 (en) | 2009-03-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4584332B2 (ja) | アクティブマトリクス基板、表示装置、テレビジョン受像機 | |
JP4541421B2 (ja) | 液晶表示装置、テレビジョン受像機 | |
JP4907659B2 (ja) | アクティブマトリクス基板、液晶パネル、表示装置、テレビジョン受像機 | |
JP4405557B2 (ja) | アクティブマトリクス基板、表示装置、テレビジョン装置、アクティブマトリクス基板の製造方法、及び表示装置の製造方法 | |
US8253872B2 (en) | Liquid crystal display device having source-drain parasitic capacitances of a delta arrangement | |
JP5431335B2 (ja) | アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法 | |
JP5220863B2 (ja) | アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機 | |
US8023056B2 (en) | Active matrix substrate, display device, and television receiver | |
US8436805B2 (en) | Active matrix substrate, liquid crystal panel, liquid crystal display unit, liquid crystal display device, and television receiver | |
US8570453B2 (en) | Active matrix substrate, liquid crystal panel, liquid crystal display unit, liquid crystal display device and television receiver | |
US20150055038A1 (en) | Liquid Crystal Display Device | |
US20110227097A1 (en) | Active matrix substrate, production method of the same, liquid crystal panel, liquid crystal display device, liquid crystal display unit, and television receiver | |
JP5107437B2 (ja) | アクティブマトリクス基板、アクティブマトリクス基板の製造方法、液晶パネル、液晶パネルの製造方法、液晶表示装置、液晶表示ユニット、テレビジョン受像機 | |
US20110279735A1 (en) | Active matrix substrate, liquid crystal panel, liquid crystal display device, liquid crystal display unit and television receiver | |
US20110149179A1 (en) | Active matrix substrate, liquid crystal panel, liquid crystal display device, liquid crystal display unit, and television receiver | |
US20110037689A1 (en) | Active matrix substrate, manufacturing method of active matrix substrate, liquid crystal panel, manufacturing method of liquid crystal panel, liquid crystal display apparatus, liquid crystal display unit, and television receiver | |
JP2005283691A (ja) | 液晶表示装置 | |
KR20070082244A (ko) | 표시판 및 이를 구비한 표시 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100309 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100427 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100601 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100802 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100831 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100901 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4584332 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130910 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |