JP6956288B2 - 基板処理方法、プラズマ処理装置、及びエッチングガス組成物 - Google Patents
基板処理方法、プラズマ処理装置、及びエッチングガス組成物 Download PDFInfo
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- JP6956288B2 JP6956288B2 JP2021046015A JP2021046015A JP6956288B2 JP 6956288 B2 JP6956288 B2 JP 6956288B2 JP 2021046015 A JP2021046015 A JP 2021046015A JP 2021046015 A JP2021046015 A JP 2021046015A JP 6956288 B2 JP6956288 B2 JP 6956288B2
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- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
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- Engineering & Computer Science (AREA)
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- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
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TW110110808A TW202209474A (zh) | 2020-04-30 | 2021-03-25 | 基板處理方法及電漿處理裝置 |
SG10202103960VA SG10202103960VA (en) | 2020-04-30 | 2021-04-19 | Substrate processing method and plasma processing apparatus |
EP21169517.6A EP3905307B1 (en) | 2020-04-30 | 2021-04-20 | Substrate processing method and plasma processing apparatus |
KR1020210051545A KR102459129B1 (ko) | 2020-04-30 | 2021-04-21 | 기판 처리 방법 및 플라즈마 처리 장치 |
CN202110435309.3A CN113594032A (zh) | 2020-04-30 | 2021-04-22 | 基板处理方法及等离子体处理装置 |
US17/244,957 US20210343539A1 (en) | 2020-04-30 | 2021-04-30 | Substrate processing method and plasma processing apparatus |
JP2021163469A JP2022002337A (ja) | 2020-04-30 | 2021-10-04 | 基板処理方法及びプラズマ処理装置 |
KR1020220136180A KR20220150845A (ko) | 2020-04-30 | 2022-10-21 | 기판 처리 방법 및 플라즈마 처리 장치 |
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US17/092,376 US11342194B2 (en) | 2019-11-25 | 2020-11-09 | Substrate processing method and substrate processing apparatus |
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WO2023162161A1 (ja) * | 2022-02-25 | 2023-08-31 | 東京エレクトロン株式会社 | 温調システム、温調方法、基板処理方法及び基板処理装置 |
WO2024043166A1 (ja) * | 2022-08-22 | 2024-02-29 | 東京エレクトロン株式会社 | プラズマ処理装置及び基板処理システム |
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JPS6066823A (ja) | 1983-09-22 | 1985-04-17 | Semiconductor Energy Lab Co Ltd | 半導体エッチング方法 |
JPH06168914A (ja) * | 1992-05-13 | 1994-06-14 | Tokyo Electron Ltd | エッチング処理方法 |
JP3704965B2 (ja) | 1998-08-12 | 2005-10-12 | セイコーエプソン株式会社 | ドライエッチング方法及び装置 |
US6401728B2 (en) * | 1999-03-01 | 2002-06-11 | United Microelectronics Corp. | Method for cleaning interior of etching chamber |
WO2009044681A1 (ja) * | 2007-10-05 | 2009-04-09 | Sekisui Chemical Co., Ltd. | シリコンのエッチング方法 |
KR101134909B1 (ko) * | 2010-05-06 | 2012-04-17 | 주식회사 테스 | 실리콘 산화막의 건식 식각 방법 |
KR102182234B1 (ko) * | 2012-07-31 | 2020-11-24 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 포토레지스트 조성물 및 포토리소그래픽 패턴의 형성 방법 |
JP2015073035A (ja) * | 2013-10-03 | 2015-04-16 | 東京エレクトロン株式会社 | エッチング方法 |
JP6788177B2 (ja) * | 2015-05-14 | 2020-11-25 | セントラル硝子株式会社 | ドライエッチング方法、ドライエッチング剤及び半導体装置の製造方法 |
US9831097B2 (en) * | 2015-12-18 | 2017-11-28 | Applied Materials, Inc. | Methods for selective etching of a silicon material using HF gas without nitrogen etchants |
US10892143B2 (en) * | 2016-10-21 | 2021-01-12 | Applied Materials, Inc. | Technique to prevent aluminum fluoride build up on the heater |
US10811267B2 (en) * | 2017-12-21 | 2020-10-20 | Micron Technology, Inc. | Methods of processing semiconductor device structures and related systems |
KR20240037371A (ko) * | 2018-03-16 | 2024-03-21 | 램 리써치 코포레이션 | 유전체들의 고 종횡비 피처들의 플라즈마 에칭 화학물질들 |
KR20210114509A (ko) * | 2019-01-23 | 2021-09-23 | 샌트랄 글래스 컴퍼니 리미티드 | 드라이 에칭 방법, 드라이 에칭제, 및 그 보존 용기 |
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JP2021174985A (ja) | 2021-11-01 |
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