JP6953133B2 - 容量結合型プラズマ処理装置のエッジリングのrf振幅の制御 - Google Patents
容量結合型プラズマ処理装置のエッジリングのrf振幅の制御 Download PDFInfo
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Description
本開示の態様は、概して、処理チャンバ内のエッジリングのRF振幅を制御するための装置及び方法に関する。
エッジリングは、処理チャンバ内で処理中に基板(例えば、半導体ウェハ)の周囲を囲む円形の部品である。エッジリングは処理チャンバ内でプラズマに曝露されるため、エッジリングは浸食し、所定の間隔の後に交換又は他の予防的保守を必要とする可能性がある。エッジリングがあまりにも浸食されると、基板のエッジのプラズマシースが低下し、基板のエッジでプラズマ処理特性が変化する。プラズマ処理特性の変化は、基板のエッジで望ましくない処理効果を引き起こし、したがって、基板のエッジ近くの使用可能な実面積を減少させる。
Claims (15)
- 基板を静電チャックにチャッキングするための1以上のチャッキング電極が内部に埋設された静電チャックと、
静電チャックの上に配置されたセラミックス層と、
セラミックス層の周りに配置されたセラミックスリングと、
セラミックスリング内に埋設された電極と、
セラミックスリング上に接触して配置されたエッジリングと、
電極に隣接してセラミックスリングの上面とエッジリングの下面との間に設けられた閉ギャップであって、電極とプラズマシースとの間の電気的結合を減少させるように構成された閉ギャップと、
1以上の伝送線を介して電極に結合された可変コンデンサとを含む基板支持体。 - セラミックスリング内に埋設された電極はリング形状である、請求項1記載の基板支持体。
- シリコーンベースのサーマルガスケットが閉ギャップを占めている、請求項1記載の基板支持体。
- 可変コンデンサはグランドに電気的に結合される、請求項1記載の基板支持体。
- 静電チャックとセラミックス層との間に配置されたヒーターを含む、請求項1記載の基板支持体。
- セラミックスリングは、二酸化ケイ素又は窒化ケイ素を含む、請求項1記載の基板支持体。
- 処理チャンバであって、
チャンバ本体と、
チャンバ本体上に配置された蓋と、
蓋の上方に配置された誘導結合プラズマ装置と、
チャンバ本体内に配置された基板支持体とを含み、基板支持体は、
基板を静電チャックにチャッキングするための1以上のチャッキング電極が内部に埋設された静電チャックと、
静電チャックの上に配置されたセラミックス層と、
セラミックス層の周りに配置されたセラミックスリングと、
セラミックスリング内に埋設され、1以上の伝送線を介して可変コンデンサに結合された電極と、
セラミックスリング上に接触して配置されたエッジリングと、
電極に隣接してセラミックスリングの上面とエッジリングの下面との間に設けられた閉ギャップであって、電極とプラズマシースとの間の電気的結合を減少させるように構成された閉ギャップとを含む処理チャンバ。 - セラミックスリング内に埋設された電極はリング形状である、請求項7記載の処理チャンバ。
- シリコーンベースのサーマルガスケットが閉ギャップを占めている、請求項7記載の処理チャンバ。
- 可変コンデンサはグランドに電気的に結合され、セラミックスリング内に埋設された電極は、幅が3ミリメートル〜20ミリメートルである、請求項7記載の処理チャンバ。
- 静電チャックとセラミックス層との間に配置されたヒーターを含み、セラミックスリングは、二酸化ケイ素又は窒化ケイ素を含む、請求項7記載の処理チャンバ。
- 1以上のチャッキング電極に結合されたバイアス源と、誘導結合プラズマ装置へのRF電源とを含む、請求項7記載の処理チャンバ。
- 1以上の伝送線は3本の伝送線であり、1以上の伝送線はセラミックスリング内に埋設された電極に等間隔に結合される、請求項7記載の処理チャンバ。
- プラズマシースを使用して基板の所定量を処理し、セラミックスリング上に接触して配置されたエッジリングの浸食を生じさせる工程と、
プラズマシースを再配置するために、浸食後にエッジリングでのRF電圧を増加させる工程と、
エッジリングの浸食を修正するために、RF電圧を増加させた後に追加の基板を処理する工程と、
セラミックスリング内に埋設された電極に隣接してセラミックスリングの上面とエッジリングの下面との間に設けられた閉ギャップの厚さを選択して、電極とプラズマシースとの間の結合を所望の量だけ減らす工程とを含む基板を処理する方法。 - RF電圧を増加させる工程は、伝送線によって電極に結合された可変コンデンサを調整する工程を含み、可変コンデンサは電気的に接地され、電極はエッジリングの下に配置される、請求項14記載の方法。
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US201662286028P | 2016-01-22 | 2016-01-22 | |
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US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
KR102630261B1 (ko) | 2014-10-17 | 2024-01-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성 |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
KR20170039781A (ko) * | 2015-10-01 | 2017-04-12 | 삼성디스플레이 주식회사 | 정전척 및 이를 포함하는 기판 처리 장치 |
US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
US10685862B2 (en) * | 2016-01-22 | 2020-06-16 | Applied Materials, Inc. | Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device |
US9852889B1 (en) * | 2016-06-22 | 2017-12-26 | Lam Research Corporation | Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring |
US10665433B2 (en) * | 2016-09-19 | 2020-05-26 | Varian Semiconductor Equipment Associates, Inc. | Extreme edge uniformity control |
US10763081B2 (en) | 2017-07-10 | 2020-09-01 | Applied Materials, Inc. | Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
JP6974088B2 (ja) * | 2017-09-15 | 2021-12-01 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
CN109961997B (zh) * | 2017-12-22 | 2021-11-16 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及其直流偏置电压控制方法 |
US11387134B2 (en) | 2018-01-19 | 2022-07-12 | Applied Materials, Inc. | Process kit for a substrate support |
SG11202007851PA (en) * | 2018-02-28 | 2020-09-29 | Applied Materials Inc | Electrostatic chuck with multiple radio frequency meshes to control plasma uniformity |
CN110323117B (zh) | 2018-03-28 | 2024-06-21 | 三星电子株式会社 | 等离子体处理设备 |
JP7096079B2 (ja) | 2018-06-15 | 2022-07-05 | キオクシア株式会社 | プラズマ処理装置の再生装置 |
US10867829B2 (en) * | 2018-07-17 | 2020-12-15 | Applied Materials, Inc. | Ceramic hybrid insulator plate |
WO2020050932A1 (en) | 2018-09-04 | 2020-03-12 | Applied Materials, Inc. | Formulations for advanced polishing pads |
KR102111504B1 (ko) * | 2018-10-15 | 2020-05-18 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
KR102595900B1 (ko) * | 2018-11-13 | 2023-10-30 | 삼성전자주식회사 | 플라즈마 처리 장치 |
US10903050B2 (en) * | 2018-12-10 | 2021-01-26 | Lam Research Corporation | Endpoint sensor based control including adjustment of an edge ring parameter for each substrate processed to maintain etch rate uniformity |
US11955314B2 (en) * | 2019-01-09 | 2024-04-09 | Tokyo Electron Limited | Plasma processing apparatus |
US10784089B2 (en) | 2019-02-01 | 2020-09-22 | Applied Materials, Inc. | Temperature and bias control of edge ring |
US12009236B2 (en) | 2019-04-22 | 2024-06-11 | Applied Materials, Inc. | Sensors and system for in-situ edge ring erosion monitor |
JP7278160B2 (ja) * | 2019-07-01 | 2023-05-19 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
US11894255B2 (en) * | 2019-07-30 | 2024-02-06 | Applied Materials, Inc. | Sheath and temperature control of process kit |
US20210175103A1 (en) * | 2019-12-06 | 2021-06-10 | Applied Materials, Inc. | In situ failure detection in semiconductor processing chambers |
US11887820B2 (en) * | 2020-01-10 | 2024-01-30 | COMET Technologies USA, Inc. | Sector shunts for plasma-based wafer processing systems |
CN115485809A (zh) * | 2020-03-04 | 2022-12-16 | 朗姆研究公司 | 使可调谐边缘鞘***中的反射功率最小化 |
KR20220100339A (ko) | 2021-01-08 | 2022-07-15 | 삼성전자주식회사 | 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조방법 |
JP2023087396A (ja) | 2021-12-13 | 2023-06-23 | 東京エレクトロン株式会社 | プラズマ処理装置及び電位制御方法 |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5748434A (en) * | 1996-06-14 | 1998-05-05 | Applied Materials, Inc. | Shield for an electrostatic chuck |
US6039836A (en) | 1997-12-19 | 2000-03-21 | Lam Research Corporation | Focus rings |
US6232236B1 (en) | 1999-08-03 | 2001-05-15 | Applied Materials, Inc. | Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system |
JP4655385B2 (ja) * | 2000-03-01 | 2011-03-23 | 株式会社日立製作所 | プラズマ処理装置および処理方法 |
KR100502268B1 (ko) * | 2000-03-01 | 2005-07-22 | 가부시끼가이샤 히다치 세이사꾸쇼 | 플라즈마처리장치 및 방법 |
JP4698097B2 (ja) * | 2001-09-26 | 2011-06-08 | 京セラ株式会社 | ウェハ支持部材 |
JP2003257935A (ja) * | 2002-03-05 | 2003-09-12 | Tokyo Electron Ltd | プラズマ処理装置 |
US6896765B2 (en) * | 2002-09-18 | 2005-05-24 | Lam Research Corporation | Method and apparatus for the compensation of edge ring wear in a plasma processing chamber |
CN1851896A (zh) | 2005-12-05 | 2006-10-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种静电卡盘 |
CN100444310C (zh) * | 2005-12-07 | 2008-12-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种质量流量控制器在线校验的方法 |
US7758764B2 (en) | 2007-06-28 | 2010-07-20 | Lam Research Corporation | Methods and apparatus for substrate processing |
US8563619B2 (en) | 2007-06-28 | 2013-10-22 | Lam Research Corporation | Methods and arrangements for plasma processing system with tunable capacitance |
TW201005825A (en) | 2008-05-30 | 2010-02-01 | Panasonic Corp | Plasma processing apparatus and method |
US20140034239A1 (en) | 2008-07-23 | 2014-02-06 | Applied Materials, Inc. | Differential counter electrode tuning in a plasma reactor with an rf-driven workpiece support electrode |
US20140069584A1 (en) | 2008-07-23 | 2014-03-13 | Applied Materials, Inc. | Differential counter electrode tuning in a plasma reactor with an rf-driven ceiling electrode |
US20100018648A1 (en) | 2008-07-23 | 2010-01-28 | Applied Marterials, Inc. | Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring |
US8734664B2 (en) * | 2008-07-23 | 2014-05-27 | Applied Materials, Inc. | Method of differential counter electrode tuning in an RF plasma reactor |
JP5357639B2 (ja) * | 2009-06-24 | 2013-12-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
JP5496630B2 (ja) * | 2009-12-10 | 2014-05-21 | 東京エレクトロン株式会社 | 静電チャック装置 |
US20130107415A1 (en) | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Electrostatic chuck |
US10825708B2 (en) * | 2011-12-15 | 2020-11-03 | Applied Materials, Inc. | Process kit components for use with an extended and independent RF powered cathode substrate for extreme edge tunability |
US8721833B2 (en) * | 2012-02-05 | 2014-05-13 | Tokyo Electron Limited | Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof |
US8486798B1 (en) * | 2012-02-05 | 2013-07-16 | Tokyo Electron Limited | Variable capacitance chamber component incorporating a semiconductor junction and methods of manufacturing and using thereof |
US9412579B2 (en) * | 2012-04-26 | 2016-08-09 | Applied Materials, Inc. | Methods and apparatus for controlling substrate uniformity |
JP5992375B2 (ja) * | 2013-08-08 | 2016-09-14 | 株式会社東芝 | 静電チャック、載置プレート支持台及び静電チャックの製造方法 |
US9053908B2 (en) | 2013-09-19 | 2015-06-09 | Lam Research Corporation | Method and apparatus for controlling substrate DC-bias and ion energy and angular distribution during substrate etching |
US9472410B2 (en) | 2014-03-05 | 2016-10-18 | Applied Materials, Inc. | Pixelated capacitance controlled ESC |
JP6452449B2 (ja) * | 2015-01-06 | 2019-01-16 | 東京エレクトロン株式会社 | 載置台及び基板処理装置 |
US20170263478A1 (en) | 2015-01-16 | 2017-09-14 | Lam Research Corporation | Detection System for Tunable/Replaceable Edge Coupling Ring |
US10163610B2 (en) * | 2015-07-13 | 2018-12-25 | Lam Research Corporation | Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation |
US9761459B2 (en) | 2015-08-05 | 2017-09-12 | Lam Research Corporation | Systems and methods for reverse pulsing |
US9620376B2 (en) | 2015-08-19 | 2017-04-11 | Lam Research Corporation | Self limiting lateral atomic layer etch |
US9984858B2 (en) | 2015-09-04 | 2018-05-29 | Lam Research Corporation | ALE smoothness: in and outside semiconductor industry |
US10192751B2 (en) | 2015-10-15 | 2019-01-29 | Lam Research Corporation | Systems and methods for ultrahigh selective nitride etch |
US10062599B2 (en) | 2015-10-22 | 2018-08-28 | Lam Research Corporation | Automated replacement of consumable parts using interfacing chambers |
US10124492B2 (en) | 2015-10-22 | 2018-11-13 | Lam Research Corporation | Automated replacement of consumable parts using end effectors interfacing with plasma processing system |
US20170115657A1 (en) | 2015-10-22 | 2017-04-27 | Lam Research Corporation | Systems for Removing and Replacing Consumable Parts from a Semiconductor Process Module in Situ |
US9881820B2 (en) | 2015-10-22 | 2018-01-30 | Lam Research Corporation | Front opening ring pod |
US9601319B1 (en) | 2016-01-07 | 2017-03-21 | Lam Research Corporation | Systems and methods for eliminating flourine residue in a substrate processing chamber using a plasma-based process |
US10685862B2 (en) | 2016-01-22 | 2020-06-16 | Applied Materials, Inc. | Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device |
US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
US10699878B2 (en) | 2016-02-12 | 2020-06-30 | Lam Research Corporation | Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring |
US10438833B2 (en) | 2016-02-16 | 2019-10-08 | Lam Research Corporation | Wafer lift ring system for wafer transfer |
US9966231B2 (en) | 2016-02-29 | 2018-05-08 | Lam Research Corporation | Direct current pulsing plasma systems |
US10269566B2 (en) | 2016-04-29 | 2019-04-23 | Lam Research Corporation | Etching substrates using ale and selective deposition |
KR20170127724A (ko) * | 2016-05-12 | 2017-11-22 | 삼성전자주식회사 | 플라즈마 처리 장치 |
US9852889B1 (en) | 2016-06-22 | 2017-12-26 | Lam Research Corporation | Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring |
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