JP6953075B2 - 切削装置及びウェーハの加工方法 - Google Patents
切削装置及びウェーハの加工方法 Download PDFInfo
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- JP6953075B2 JP6953075B2 JP2017153874A JP2017153874A JP6953075B2 JP 6953075 B2 JP6953075 B2 JP 6953075B2 JP 2017153874 A JP2017153874 A JP 2017153874A JP 2017153874 A JP2017153874 A JP 2017153874A JP 6953075 B2 JP6953075 B2 JP 6953075B2
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- 238000005520 cutting process Methods 0.000 title claims description 76
- 238000003672 processing method Methods 0.000 title claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 description 128
- 238000001514 detection method Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000004397 blinking Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
4 基台
4a,4b,4c 開口
6 第1搬送ユニット
8a,8b カセット
10 センタリングテーブル
12 X軸移動テーブル
14 防塵防滴カバー
16 チャックテーブル
16a 保持面
16b 吸引路
18 バルブ
20 吸引源
22 第1支持構造
24 第1レール
26 第1昇降ユニット
28 第2搬送ユニット
30 第2レール
32 第2昇降ユニット
34 第3搬送ユニット
36 シャッター
38 第2支持構造
40 移動ユニット
42 切削ユニット
44 撮像ユニット
46 洗浄ユニット
48 ラインセンサユニット
48a レーザービーム
50 処理ユニット
50a 情報算出部
50b 閾値比較部
11 ウェーハ
11a 表面
11b 裏面
11c 外周部
11d 段差部
11e 突起
11f 角部
13 デバイス
Claims (4)
- 外周部が面取りされたウェーハを保持面で保持する回転可能なチャックテーブルと、
スピンドルに装着された切削ブレードで該チャックテーブルに保持された該ウェーハの該外周部を該表面側から切削し、該外周部に沿う環状の段差部を該ウェーハの該表面側に形成する切削ユニットと、
該チャックテーブルに保持された該ウェーハの該外周部を含む領域に該ウェーハの径方向に長い帯状のレーザービームを照射し、該領域で反射する該レーザービームの反射光を検出するラインセンサユニットと、
該ウェーハを切削して該段差部を形成する前に、該チャックテーブルを回転させた状態で該ラインセンサユニットにより検出される該レーザービームの該反射光から該ウェーハの位置及び該ウェーハの該表面の高さを算出し、該ウェーハを切削して該段差部を形成した後に、該ラインセンサユニットにより検出される該レーザービームの該反射光から該段差部の幅、高さ、高低差、及び該段差部の角部の高さを算出する情報算出部と、を備えることを特徴とする切削装置。 - 該情報算出部で算出される該段差部の幅、高さ、高低差、及び該段差部の角部の高さと、該段差部の幅、高さ、高低差、及び該段差部の角部の高さの閾値とを比較して、該切削ブレードの先端の消耗量及び形状の変化が許容範囲内か否かを判定する閾値比較部を更に備えることを特徴とする請求項1に記載の切削装置。
- 請求項1又は請求項2に記載の切削装置を用いて、デバイスが形成されたデバイス領域と該デバイス領域を囲む外周余剰領域とを該表面側に備え、該外周部が面取りされた該ウェーハを加工するウェーハの加工方法であって、
該ウェーハの裏面側を該チャックテーブルで保持する保持ステップと、
該チャックテーブルを回転させた状態で該チャックテーブルに保持された該ウェーハの該外周部を含む領域に該レーザービームを照射し、該領域で反射する該レーザービームの該反射光から、該ウェーハの位置及び該ウェーハの該表面の高さを算出する第1算出ステップと、
該第1算出ステップで算出された該ウェーハの位置及び該ウェーハの該表面の高さに基づき、該切削ブレードを該外周部の該表面側から切り込ませ、該外周部に所定の幅及び高さの該段差部を形成する段差部形成ステップと、を備えることを特徴とするウェーハの加工方法。 - 該段差部形成ステップの後に、該チャックテーブルに保持された該ウェーハの該外周部を含む領域に該レーザービームを照射し、該領域で反射する該レーザービームの該反射光から該段差部の幅、高さ、高低差、及び該段差部の角部の高さを算出する第2算出ステップと、
該第2算出ステップで算出された該段差部の幅、高さ、高低差、及び該段差部の角部の高さと、該段差部の幅、高さ、高低差、及び該段差部の角部の高さの閾値とを比較して、該切削ブレードの先端の消耗量及び形状の変化が許容範囲内か否かを判定する判定ステップと、を更に備えることを特徴とする請求項3に記載のウェーハの加工方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017153874A JP6953075B2 (ja) | 2017-08-09 | 2017-08-09 | 切削装置及びウェーハの加工方法 |
TW107123845A TWI751354B (zh) | 2017-08-09 | 2018-07-10 | 切割裝置及晶圓的加工方法 |
SG10201806236TA SG10201806236TA (en) | 2017-08-09 | 2018-07-20 | Cutting apparatus and wafer processing method |
US16/050,470 US10622215B2 (en) | 2017-08-09 | 2018-07-31 | Cutting apparatus and wafer processing method |
CN201810862122.XA CN109382920B (zh) | 2017-08-09 | 2018-08-01 | 切削装置和晶片的加工方法 |
KR1020180091351A KR102546465B1 (ko) | 2017-08-09 | 2018-08-06 | 절삭 장치 및 웨이퍼의 가공 방법 |
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JP2017153874A JP6953075B2 (ja) | 2017-08-09 | 2017-08-09 | 切削装置及びウェーハの加工方法 |
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JP2019033189A JP2019033189A (ja) | 2019-02-28 |
JP6953075B2 true JP6953075B2 (ja) | 2021-10-27 |
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US (1) | US10622215B2 (ja) |
JP (1) | JP6953075B2 (ja) |
KR (1) | KR102546465B1 (ja) |
CN (1) | CN109382920B (ja) |
SG (1) | SG10201806236TA (ja) |
TW (1) | TWI751354B (ja) |
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JP7283951B2 (ja) * | 2019-04-05 | 2023-05-30 | 株式会社ディスコ | 加工装置 |
JP7216613B2 (ja) * | 2019-05-16 | 2023-02-01 | 株式会社ディスコ | 加工装置 |
JP2020203366A (ja) * | 2019-06-19 | 2020-12-24 | 株式会社ディスコ | 加工装置 |
JP7262901B2 (ja) * | 2019-06-24 | 2023-04-24 | 株式会社ディスコ | 被加工物の切削方法 |
JP7250637B2 (ja) * | 2019-07-01 | 2023-04-03 | 株式会社ディスコ | 加工装置及びチャックテーブル |
JP7430455B2 (ja) | 2020-06-05 | 2024-02-13 | 株式会社ディスコ | エッジ位置検出装置及びエッジ位置検出方法 |
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US6831742B1 (en) * | 2000-10-23 | 2004-12-14 | Applied Materials, Inc | Monitoring substrate processing using reflected radiation |
JP2005038978A (ja) * | 2003-07-18 | 2005-02-10 | Speedfam Co Ltd | 半導体ウェハの平坦面外周部研磨装置 |
JP2006108532A (ja) * | 2004-10-08 | 2006-04-20 | Disco Abrasive Syst Ltd | ウエーハの研削方法 |
CN101138070B (zh) * | 2005-08-05 | 2011-03-23 | 株式会社尼康 | 载台装置及曝光装置 |
TWI447798B (zh) * | 2010-12-07 | 2014-08-01 | Alpha & Omega Semiconductor Cayman Ltd | 一種在晶圓級封裝的模封程序中避免晶圓破損的方法 |
JP5757831B2 (ja) * | 2011-09-14 | 2015-08-05 | 株式会社ディスコ | 切削ブレード先端形状検出方法 |
JP5829881B2 (ja) * | 2011-10-07 | 2015-12-09 | 株式会社ディスコ | 切削装置 |
JP2013149822A (ja) * | 2012-01-20 | 2013-08-01 | Disco Abrasive Syst Ltd | エッジトリミング方法 |
CN104137249B (zh) * | 2012-04-25 | 2017-11-14 | 应用材料公司 | 晶片边缘的测量和控制 |
JP6105872B2 (ja) | 2012-08-06 | 2017-03-29 | 株式会社ディスコ | ウエーハの加工方法 |
US20140054748A1 (en) * | 2012-08-21 | 2014-02-27 | Genmao Liu | Edge trimming method for semiconductor wafer and semiconductor wafer having trimmed edge |
JP5991890B2 (ja) * | 2012-09-11 | 2016-09-14 | 株式会社ディスコ | ウエーハの加工方法 |
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JP6242619B2 (ja) * | 2013-07-23 | 2017-12-06 | 株式会社ディスコ | 加工装置 |
JP2015085398A (ja) * | 2013-10-28 | 2015-05-07 | 株式会社ディスコ | 切削装置 |
JP2016078147A (ja) * | 2014-10-14 | 2016-05-16 | 株式会社ディスコ | 研削装置 |
CN204271041U (zh) * | 2014-10-20 | 2015-04-15 | 上海技美电子科技有限公司 | 晶圆检测装置 |
JP2016100356A (ja) * | 2014-11-18 | 2016-05-30 | 株式会社ディスコ | 切削装置 |
CN104567685A (zh) * | 2015-01-23 | 2015-04-29 | 北京中拓机械集团有限责任公司 | 半导体晶片的检测装置 |
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2018
- 2018-07-10 TW TW107123845A patent/TWI751354B/zh active
- 2018-07-20 SG SG10201806236TA patent/SG10201806236TA/en unknown
- 2018-07-31 US US16/050,470 patent/US10622215B2/en active Active
- 2018-08-01 CN CN201810862122.XA patent/CN109382920B/zh active Active
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US20190051532A1 (en) | 2019-02-14 |
KR102546465B1 (ko) | 2023-06-21 |
SG10201806236TA (en) | 2019-03-28 |
CN109382920A (zh) | 2019-02-26 |
US10622215B2 (en) | 2020-04-14 |
TWI751354B (zh) | 2022-01-01 |
TW201911403A (zh) | 2019-03-16 |
KR20190016914A (ko) | 2019-02-19 |
CN109382920B (zh) | 2022-02-18 |
JP2019033189A (ja) | 2019-02-28 |
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