JP6945585B2 - ワイドバンドギャップ半導体デバイスおよびワイドバンドギャップ半導体デバイスを形成する方法 - Google Patents
ワイドバンドギャップ半導体デバイスおよびワイドバンドギャップ半導体デバイスを形成する方法 Download PDFInfo
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Description
Claims (14)
- ワイドバンドギャップ半導体デバイス(500)を形成する方法(200、300、400)であって、前記方法(200、300、400)は、
ワイドバンドギャップ半導体基板上にゲート絶縁層を形成するステップ(210、310、410)を含み、
前記方法は、アニーリングするステップとして、
少なくとも1つの第1の反応性ガス種を使用して前記ゲート絶縁層をアニーリングするステップ(220、320)と、
不活性ガス雰囲気において前記ゲート絶縁層をアニーリングするステップ(230)と、
少なくとも1つの第2の反応性ガス種を使用して前記ゲート絶縁層をアニーリングするステップ(330)と、
を含むか、または、
前記方法は、アニーリングするステップとして、
少なくとも1つの第1の反応性ガス種および少なくとも1つの第2の反応性ガス種を同時に含む反応性ガス雰囲気を使用して前記ゲート絶縁層をアニーリングするステップ(420)と、
不活性ガス雰囲気において前記ゲート絶縁層をアニーリングするステップ(230)と、
を含み、
前記第1の反応性ガス種は、前記第2の反応性ガス種とは異なり、
少なくとも1つの第1の反応性ガス種を使用してアニーリングするステップ(220、320)は、最小0.1体積%の前記第1の反応性ガス種と最大0.1体積%の前記第2の反応性ガス種とを含む反応性ガス雰囲気において行われ、
少なくとも1つの第2の反応性ガス種を使用してアニーリングするステップ(330)は、最小0.1体積%の前記第2の反応性ガス種と最大0.1体積%の前記第1の反応性ガス種とを含む反応性ガス雰囲気において行われる、
方法(200、300、400)。 - 前記反応性ガス雰囲気を使用してアニーリングするステップ(420)は、最小0.1体積%の前記第1の反応性ガス種と最小0.1体積%の前記第2の反応性ガス種とを同時に含む反応性ガス雰囲気において行われる、
請求項1記載の方法(200、300、400)。 - 前記第1の反応性ガス種は、酸化窒素、一酸化二窒素、水素、アンモニア、過酸化水素、硝酸、水蒸気、塩化ホスホリル、酸素のうち1つであり、
前記第2の反応性ガス種は、酸化窒素、一酸化二窒素、水素、アンモニア、過酸化水素、硝酸、水蒸気、塩化ホスホリル、酸素のうち別の1つである、
請求項1または2記載の方法(200、300、400)。 - 前記第1の反応性ガス種は、少なくとも1つの第1の反応性ガス種を使用してアニーリングするステップ(220、320)中、不活性ガスによって希釈され、これにより前記第1の反応性ガス種の体積割合は、最小1体積%かつ最大50体積%であり、前記第1の反応性ガス種は、酸化窒素である、
請求項1から3までのいずれか1項記載の方法(200、300、400)。 - 前記第2の反応性ガス種は、少なくとも1つの第2の反応性ガス種を使用してアニーリングするステップ(330)中、不活性ガスによって希釈され、これにより前記第2の反応性ガス種の体積割合は、最小0.1体積%かつ最大10体積%であり、前記第2の反応性ガス種は、アンモニアである、
請求項1から4までのいずれか1項記載の方法(200、300、400)。 - 前記不活性ガス雰囲気は、1200℃より低い温度である、
請求項1から5までのいずれか1項記載の方法(200、300、400)。 - ワイドバンドギャップ半導体デバイス(500)を形成する方法(200)であって、前記方法(200)は、
ワイドバンドギャップ半導体基板上にゲート絶縁層を形成するステップ(210)と、
アニーリングツール内で少なくとも1つの反応性ガス種を含む反応性ガス雰囲気において前記ゲート絶縁層をアニーリングするステップ(220)と、
前記反応性ガス雰囲気において前記ゲート絶縁層をアニーリングするステップ(220)の後、前記アニーリングツールの外の雰囲気に前記ゲート絶縁層を暴露することなく、不活性ガス雰囲気において前記ゲート絶縁層をアニーリングするステップ(230)と、
を含み、
前記方法はさらに、前記ゲート絶縁層をアニーリングするステップ後に、前記ゲート絶縁層上にゲート電極を形成するステップ(130,240)を含み、
前記ゲート電極(130,240)は、前記ワイドバンドギャップ半導体基板の表面から前記ワイドバンドギャップ半導体基板内へ延在するゲートトレンチ電極であり、
前記反応性ガス種は、酸化窒素およびアンモニアの少なくとも一方を含み、
前記反応性ガス種の体積割合は、最小0.1体積%である、
方法(200)。 - 前記反応性ガス種は、最小5体積%の酸化窒素を含み、前記不活性ガス雰囲気は、最小90体積%の窒素を含み、
前記不活性ガス雰囲気でのアニーリングの期間は、前記反応性ガス種でのアニーリングの期間より短い、
請求項7記載の方法(200)。 - 前記不活性ガス雰囲気は、最大0.5体積%の酸素濃度を有する、
請求項7または8記載の方法(200)。 - 前記ゲート絶縁層をアニーリングする期間は、最短10分かつ最長600分である、
請求項1から9までのいずれか1項記載の方法(100,200)。 - 前記ゲート絶縁層をアニーリングするアニーリング温度は、最低600℃かつ最高1200℃である、
請求項1から10までのいずれか1項記載の方法(100,200)。 - 前記方法はさらに、前記ゲート絶縁層をアニーリングするステップの前に、最低950℃の温度の不活性ガス雰囲気において前記ゲート絶縁層を加熱するステップを含む、
請求項1から11までのいずれか1項記載の方法(100,200)。 - 前記ワイドバンドギャップ半導体基板は、炭化ケイ素基板である、
請求項1から12までのいずれか1項記載の方法(100,200)。 - 前記ゲート絶縁層は、二酸化ケイ素層である、
請求項1から13までのいずれか1項記載の方法(100,200)。
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