JP2016157762A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP2016157762A JP2016157762A JP2015033596A JP2015033596A JP2016157762A JP 2016157762 A JP2016157762 A JP 2016157762A JP 2015033596 A JP2015033596 A JP 2015033596A JP 2015033596 A JP2015033596 A JP 2015033596A JP 2016157762 A JP2016157762 A JP 2016157762A
- Authority
- JP
- Japan
- Prior art keywords
- region
- insulating film
- semiconductor device
- gate insulating
- fluorine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 80
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 59
- 239000011737 fluorine Substances 0.000 claims abstract description 59
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 40
- 238000009826 distribution Methods 0.000 claims abstract description 36
- 239000012535 impurity Substances 0.000 claims description 62
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 238000005121 nitriding Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 10
- 230000003213 activating effect Effects 0.000 claims description 3
- -1 Fluorine ions Chemical class 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 95
- 229910010271 silicon carbide Inorganic materials 0.000 description 70
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 63
- 229910052710 silicon Inorganic materials 0.000 description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 32
- 239000010703 silicon Substances 0.000 description 32
- 239000000758 substrate Substances 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 229910052799 carbon Inorganic materials 0.000 description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 18
- 230000000694 effects Effects 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 238000000137 annealing Methods 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 12
- 230000004913 activation Effects 0.000 description 10
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229960001730 nitrous oxide Drugs 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/045—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide passivating silicon carbide surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
本実施形態の半導体装置は、SiC層と、ゲート電極と、SiC層とゲート電極との間に設けられるゲート絶縁膜と、SiC層とゲート絶縁膜との間に設けられ、窒素(N)の濃度分布のピークと、フッ素(F)の濃度分布のピークを有する第1の領域と、を備える。
本実施形態の半導体装置は、トレンチゲート型のMISFETである点で、第1の実施形態と異なる。以下、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、MISFETではなく、IGBTであること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
28 ゲート絶縁膜
30 ゲート電極
40 第1の界面領域(第1の領域)
60 第2の界面領域(第2の領域)
100 MISFET(半導体装置)
200 MISFET(半導体装置)
300 IGBT(半導体装置)
Claims (12)
- SiC層と、
ゲート電極と、
前記SiC層と前記ゲート電極との間に設けられるゲート絶縁膜と、
前記SiC層と前記ゲート絶縁膜との間に設けられ、窒素(N)の濃度分布のピークと、フッ素(F)の濃度分布のピークを有する第1の領域と、
を備える半導体装置。 - 前記第1の領域中の窒素の濃度分布のピークの濃度が1×1019cm−3以上、前記第1の領域中のフッ素の濃度分布のピークの濃度が1×1018cm−3以上である請求項1記載の半導体装置。
- 前記第1の領域中の窒素の濃度分布のピーク、及び、前記第1の領域中のフッ素の濃度分布のピークの半値全幅が20nm以下である請求項1又は請求項2記載の半導体装置。
- 前記第1の領域中の窒素の濃度分布のピークの濃度が1×1020cm−3以上、前記第1の領域中のフッ素の濃度分布のピークの濃度が5×1018cm−3以上である請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記ゲート絶縁膜はシリコン酸化膜である請求項1乃至請求項4いずれか一項記載の半導体装置。
- 前記ゲート電極は、n型不純物又はp型不純物を含有する多結晶シリコンである請求項1乃至請求項5いずれか一項記載の半導体装置。
- 前記ゲート絶縁膜と、前記ゲート電極との間に、フッ素(F)の濃度分布のピークを有する第2の領域を、更に備える請求項6記載の半導体装置。
- SiC層上にゲート絶縁膜を形成し、
窒化ガス雰囲気中で第1の熱処理を行い、
前記ゲート絶縁膜上にn型不純物又はp型不純物を含有する多結晶シリコンを堆積し、
前記多結晶シリコンにフッ素をイオン注入し、
前記n型不純物又はp型不純物を活性化させる第2の熱処理を行う半導体装置の製造方法。 - 前記ゲート絶縁膜を形成した後に、前記第1の熱処理を行う請求項8記載の半導体装置の製造方法。
- 前記ゲート絶縁膜がシリコン酸化膜である請求項8又は請求項9記載の半導体装置の製造方法。
- 前記ゲート絶縁膜が堆積膜である請求項8乃至請求項10いずれか一項記載の半導体装置の製造方法。
- 前記ゲート絶縁膜が熱酸化膜である請求項8乃至請求項10いずれか一項記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015033596A JP2016157762A (ja) | 2015-02-24 | 2015-02-24 | 半導体装置及びその製造方法 |
US15/048,348 US9812529B2 (en) | 2015-02-24 | 2016-02-19 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015033596A JP2016157762A (ja) | 2015-02-24 | 2015-02-24 | 半導体装置及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2016157762A true JP2016157762A (ja) | 2016-09-01 |
Family
ID=56690551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015033596A Pending JP2016157762A (ja) | 2015-02-24 | 2015-02-24 | 半導体装置及びその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9812529B2 (ja) |
JP (1) | JP2016157762A (ja) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017138221A1 (ja) * | 2016-02-08 | 2017-08-17 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2018046246A (ja) * | 2016-09-16 | 2018-03-22 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2018056352A (ja) * | 2016-09-29 | 2018-04-05 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
JP2018056353A (ja) * | 2016-09-29 | 2018-04-05 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
JP2019050294A (ja) * | 2017-09-11 | 2019-03-28 | 株式会社豊田中央研究所 | 炭化珪素半導体装置 |
JP2019140187A (ja) * | 2018-02-07 | 2019-08-22 | 株式会社東芝 | 半導体装置、基板、半導体装置の製造方法、及び、基板の製造方法。 |
JP2019140186A (ja) * | 2018-02-07 | 2019-08-22 | 株式会社東芝 | 半導体装置、基板、半導体装置の製造方法、及び、基板の製造方法。 |
JP2019169487A (ja) * | 2018-03-21 | 2019-10-03 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2019186545A (ja) * | 2018-04-04 | 2019-10-24 | インフィニオン テクノロジーズ アクチエンゲゼルシャフトInfineon Technologies AG | ワイドバンドギャップ半導体デバイスおよびワイドバンドギャップ半導体デバイスを形成する方法 |
JP2019189496A (ja) * | 2018-04-26 | 2019-10-31 | 国立研究開発法人産業技術総合研究所 | 炭化珪素エピタキシャルウェハ及び炭化珪素半導体装置 |
JP2020047666A (ja) * | 2018-09-14 | 2020-03-26 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2022051871A (ja) * | 2018-09-14 | 2022-04-01 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
US11462625B2 (en) | 2020-02-20 | 2022-10-04 | Asahi Kasel Microdevices Corporation | Semiconductor device having fluorine in the interface regions between the gate electrode and the channel |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108400164B (zh) * | 2018-04-23 | 2021-01-22 | 广东美的制冷设备有限公司 | 异质结碳化硅的绝缘栅极晶体管及其制作方法 |
DE102018123210B3 (de) * | 2018-09-20 | 2020-02-27 | Infineon Technologies Ag | Siliziumkarbid-Bauelemente und Verfahren zum Bilden von Siliziumkarbid-Bauelementen |
US11276762B2 (en) * | 2020-04-22 | 2022-03-15 | Wolfspeed, Inc. | Interface layer control methods for semiconductor power devices and semiconductor devices formed thereof |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1140803A (ja) * | 1997-07-15 | 1999-02-12 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH1197683A (ja) * | 1997-09-17 | 1999-04-09 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2000196073A (ja) * | 1998-12-25 | 2000-07-14 | Toshiba Corp | 半導体装置の製造方法 |
JP2007053227A (ja) * | 2005-08-18 | 2007-03-01 | Matsushita Electric Ind Co Ltd | 半導体素子およびその製造方法 |
JP2008244455A (ja) * | 2007-02-28 | 2008-10-09 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP2011100967A (ja) * | 2009-07-21 | 2011-05-19 | Rohm Co Ltd | 半導体装置 |
JP2013077761A (ja) * | 2011-09-30 | 2013-04-25 | Toshiba Corp | 炭化珪素半導体装置 |
JP2013128028A (ja) * | 2011-12-19 | 2013-06-27 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
WO2014041808A1 (ja) * | 2012-09-13 | 2014-03-20 | パナソニック株式会社 | 半導体装置 |
JP2014053595A (ja) * | 2012-08-07 | 2014-03-20 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP2014222735A (ja) * | 2013-05-14 | 2014-11-27 | パナソニック株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5712208A (en) * | 1994-06-09 | 1998-01-27 | Motorola, Inc. | Methods of formation of semiconductor composite gate dielectric having multiple incorporated atomic dopants |
US6825133B2 (en) * | 2003-01-22 | 2004-11-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer |
JP6088804B2 (ja) | 2012-11-16 | 2017-03-01 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
US9209262B2 (en) * | 2012-12-27 | 2015-12-08 | Panasonic Intellectual Property Management Co., Ltd. | Silicon carbide semiconductor device and method for manufacturing same |
-
2015
- 2015-02-24 JP JP2015033596A patent/JP2016157762A/ja active Pending
-
2016
- 2016-02-19 US US15/048,348 patent/US9812529B2/en active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1140803A (ja) * | 1997-07-15 | 1999-02-12 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH1197683A (ja) * | 1997-09-17 | 1999-04-09 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2000196073A (ja) * | 1998-12-25 | 2000-07-14 | Toshiba Corp | 半導体装置の製造方法 |
JP2007053227A (ja) * | 2005-08-18 | 2007-03-01 | Matsushita Electric Ind Co Ltd | 半導体素子およびその製造方法 |
JP2008244455A (ja) * | 2007-02-28 | 2008-10-09 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP2011100967A (ja) * | 2009-07-21 | 2011-05-19 | Rohm Co Ltd | 半導体装置 |
JP2013077761A (ja) * | 2011-09-30 | 2013-04-25 | Toshiba Corp | 炭化珪素半導体装置 |
JP2013128028A (ja) * | 2011-12-19 | 2013-06-27 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
JP2014053595A (ja) * | 2012-08-07 | 2014-03-20 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
WO2014041808A1 (ja) * | 2012-09-13 | 2014-03-20 | パナソニック株式会社 | 半導体装置 |
JP2014222735A (ja) * | 2013-05-14 | 2014-11-27 | パナソニック株式会社 | 半導体装置及びその製造方法 |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10665679B2 (en) | 2016-02-08 | 2020-05-26 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device and method for manufacturing same |
WO2017138221A1 (ja) * | 2016-02-08 | 2017-08-17 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
JPWO2017138221A1 (ja) * | 2016-02-08 | 2018-08-16 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2018046246A (ja) * | 2016-09-16 | 2018-03-22 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2018056352A (ja) * | 2016-09-29 | 2018-04-05 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
JP2018056353A (ja) * | 2016-09-29 | 2018-04-05 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
JP2019050294A (ja) * | 2017-09-11 | 2019-03-28 | 株式会社豊田中央研究所 | 炭化珪素半導体装置 |
JP2019140186A (ja) * | 2018-02-07 | 2019-08-22 | 株式会社東芝 | 半導体装置、基板、半導体装置の製造方法、及び、基板の製造方法。 |
JP2019140187A (ja) * | 2018-02-07 | 2019-08-22 | 株式会社東芝 | 半導体装置、基板、半導体装置の製造方法、及び、基板の製造方法。 |
JP2019169487A (ja) * | 2018-03-21 | 2019-10-03 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2019186545A (ja) * | 2018-04-04 | 2019-10-24 | インフィニオン テクノロジーズ アクチエンゲゼルシャフトInfineon Technologies AG | ワイドバンドギャップ半導体デバイスおよびワイドバンドギャップ半導体デバイスを形成する方法 |
US11295951B2 (en) | 2018-04-04 | 2022-04-05 | Infineon Technologies Ag | Wide band gap semiconductor device and method for forming a wide band gap semiconductor device |
JP2019189496A (ja) * | 2018-04-26 | 2019-10-31 | 国立研究開発法人産業技術総合研究所 | 炭化珪素エピタキシャルウェハ及び炭化珪素半導体装置 |
JP7337976B2 (ja) | 2018-09-14 | 2023-09-04 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2020047666A (ja) * | 2018-09-14 | 2020-03-26 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2022051871A (ja) * | 2018-09-14 | 2022-04-01 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP7072148B2 (ja) | 2018-09-14 | 2022-05-20 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
US11462625B2 (en) | 2020-02-20 | 2022-10-04 | Asahi Kasel Microdevices Corporation | Semiconductor device having fluorine in the interface regions between the gate electrode and the channel |
Also Published As
Publication number | Publication date |
---|---|
US9812529B2 (en) | 2017-11-07 |
US20160247884A1 (en) | 2016-08-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9812529B2 (en) | Semiconductor device and method for manufacturing the same | |
JP6505466B2 (ja) | 半導体装置及びその製造方法 | |
JP6305294B2 (ja) | 半導体装置及びその製造方法 | |
JP5920684B2 (ja) | 半導体装置 | |
JP6168945B2 (ja) | 半導体装置およびその製造方法 | |
US9443937B2 (en) | Semiconductor device | |
JP6189261B2 (ja) | 半導体装置およびその製造方法 | |
US9991358B2 (en) | Semiconductor device with metal-insulator-semiconductor structure | |
US9748343B2 (en) | Semiconductor device | |
US8941120B2 (en) | Semiconductor device and method for manufacturing the same | |
JP6552950B2 (ja) | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 | |
US9978842B2 (en) | Semiconductor device and method for manufacturing the same | |
JP6100233B2 (ja) | 半導体装置 | |
JP2013077761A (ja) | 炭化珪素半導体装置 | |
JP2015061018A (ja) | 半導体装置およびその製造方法 | |
US9806167B2 (en) | Method for manufacturing silicon carbide semiconductor device | |
JP6500912B2 (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
JP6367434B2 (ja) | 半導体装置およびその製造方法 | |
JP2016213414A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2017168603A (ja) | 炭化珪素半導体素子および炭化珪素半導体素子の製造方法 | |
JP2015043453A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171130 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180912 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180925 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181106 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190409 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190610 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20191126 |