JP6864564B2 - 熱処理方法 - Google Patents
熱処理方法 Download PDFInfo
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- JP6864564B2 JP6864564B2 JP2017114254A JP2017114254A JP6864564B2 JP 6864564 B2 JP6864564 B2 JP 6864564B2 JP 2017114254 A JP2017114254 A JP 2017114254A JP 2017114254 A JP2017114254 A JP 2017114254A JP 6864564 B2 JP6864564 B2 JP 6864564B2
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- 238000010438 heat treatment Methods 0.000 title claims description 140
- 238000000034 method Methods 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims description 106
- 229910052736 halogen Inorganic materials 0.000 claims description 93
- 150000002367 halogens Chemical class 0.000 claims description 93
- 230000001678 irradiating effect Effects 0.000 claims description 15
- 230000006641 stabilisation Effects 0.000 claims description 5
- 238000011105 stabilization Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 230000000087 stabilizing effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 183
- 239000004065 semiconductor Substances 0.000 description 172
- 238000012546 transfer Methods 0.000 description 63
- 239000007789 gas Substances 0.000 description 41
- 238000012545 processing Methods 0.000 description 40
- 230000007246 mechanism Effects 0.000 description 37
- 230000005855 radiation Effects 0.000 description 22
- 239000012535 impurity Substances 0.000 description 21
- 239000010453 quartz Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 238000000137 annealing Methods 0.000 description 14
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 13
- 229910052724 xenon Inorganic materials 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 4
- 238000009529 body temperature measurement Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
63 上側チャンバー窓
64 下側チャンバー窓
65 熱処理空間
74 サセプタ
75 保持プレート
77 基板支持ピン
120,130 放射温度計
140 温度センサー
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (4)
- 基板に光を照射することによって該基板を加熱する熱処理方法であって、
チャンバー内に基板を搬入してサセプタに載置する搬入工程と、
前記サセプタに載置された基板にハロゲンランプから光を照射する光照射工程と、
ロットの最初の基板が前記チャンバー内に搬入される前に、前記サセプタに予熱用基板を載置し、前記ハロゲンランプからの光照射によって前記予熱用基板を加熱して前記サセプタを予熱する予熱工程と、
を備え、
前記サセプタを予熱することなく、ロットの複数の基板に連続して前記ハロゲンランプから光を照射して加熱することにより前記サセプタの温度が上昇して一定となったときの前記サセプタの温度を安定温度とし、
前記予熱工程では、前記安定温度よりも高い温度に前記サセプタを予熱し、
前記予熱工程の後、前記サセプタの温度を前記安定温度に所定時間維持する安定化工程をさらに備え、
前記安定化工程の後、前記予熱用基板を前記チャンバーから搬出することを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記予熱工程では、前記予熱用基板を前記安定温度よりも高い予熱温度に所定時間維持することを特徴とする熱処理方法。 - 請求項1または請求項2記載の熱処理方法において、
前記安定化工程の後、前記ハロゲンランプからの光照射を停止して前記サセプタが所定温度にまで降温した時点で前記予熱用基板を前記チャンバーから搬出するとともに前記ロットの最初の基板を前記チャンバーに搬入して前記サセプタに載置することを特徴とする熱処理方法。 - 請求項1から請求項3のいずれかに記載の熱処理方法において、
前記予熱用基板の放射率は前記ロットの基板の放射率よりも高いことを特徴とする熱処理方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2017114254A JP6864564B2 (ja) | 2017-06-09 | 2017-06-09 | 熱処理方法 |
TW107116412A TWI712089B (zh) | 2017-06-09 | 2018-05-15 | 熱處理方法 |
US16/001,525 US10755948B2 (en) | 2017-06-09 | 2018-06-06 | Heat treatment method by light irradiation |
KR1020180065939A KR102126119B1 (ko) | 2017-06-09 | 2018-06-08 | 열처리 방법 |
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JP2017114254A JP6864564B2 (ja) | 2017-06-09 | 2017-06-09 | 熱処理方法 |
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Publication Number | Publication Date |
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JP2018207067A JP2018207067A (ja) | 2018-12-27 |
JP6864564B2 true JP6864564B2 (ja) | 2021-04-28 |
Family
ID=64564330
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JP2017114254A Active JP6864564B2 (ja) | 2017-06-09 | 2017-06-09 | 熱処理方法 |
Country Status (4)
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US (1) | US10755948B2 (ja) |
JP (1) | JP6864564B2 (ja) |
KR (1) | KR102126119B1 (ja) |
TW (1) | TWI712089B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
JP7041594B2 (ja) * | 2018-06-20 | 2022-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
JP7256034B2 (ja) * | 2019-03-04 | 2023-04-11 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
JP7312020B2 (ja) * | 2019-05-30 | 2023-07-20 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
US12020958B2 (en) | 2020-02-28 | 2024-06-25 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment method |
JP7460394B2 (ja) | 2020-02-28 | 2024-04-02 | 株式会社Screenホールディングス | 熱処理方法 |
JP7508303B2 (ja) | 2020-07-31 | 2024-07-01 | 株式会社Screenホールディングス | 熱処理方法 |
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JP4144057B2 (ja) * | 1997-12-11 | 2008-09-03 | 旭硝子株式会社 | 半導体製造装置用部材 |
JP2001127057A (ja) * | 1999-10-29 | 2001-05-11 | Applied Materials Inc | 半導体製造装置における基板加熱方法 |
US7231141B2 (en) * | 2001-04-23 | 2007-06-12 | Asm America, Inc. | High temperature drop-off of a substrate |
JP3982402B2 (ja) * | 2002-02-28 | 2007-09-26 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
US20080220150A1 (en) * | 2007-03-05 | 2008-09-11 | Applied Materials, Inc. | Microbatch deposition chamber with radiant heating |
US8110435B2 (en) * | 2008-12-18 | 2012-02-07 | Jusung Engineering Co., Ltd. | Method and apparatus for manufacturing semiconductor device |
JP2010225645A (ja) | 2009-03-19 | 2010-10-07 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
US9401271B2 (en) * | 2012-04-19 | 2016-07-26 | Sunedison Semiconductor Limited (Uen201334164H) | Susceptor assemblies for supporting wafers in a reactor apparatus |
JP6560550B2 (ja) | 2015-07-06 | 2019-08-14 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP6539568B2 (ja) | 2015-11-04 | 2019-07-03 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
CN108028213B (zh) * | 2015-12-30 | 2021-12-21 | 玛特森技术公司 | 用于毫秒退火***的预热方法 |
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- 2017-06-09 JP JP2017114254A patent/JP6864564B2/ja active Active
-
2018
- 2018-05-15 TW TW107116412A patent/TWI712089B/zh active
- 2018-06-06 US US16/001,525 patent/US10755948B2/en active Active
- 2018-06-08 KR KR1020180065939A patent/KR102126119B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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US20180358234A1 (en) | 2018-12-13 |
KR102126119B1 (ko) | 2020-06-23 |
TW201903903A (zh) | 2019-01-16 |
US10755948B2 (en) | 2020-08-25 |
JP2018207067A (ja) | 2018-12-27 |
TWI712089B (zh) | 2020-12-01 |
KR20180134769A (ko) | 2018-12-19 |
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