JP6824080B2 - 熱処理装置および放射温度計の測定位置調整方法 - Google Patents
熱処理装置および放射温度計の測定位置調整方法 Download PDFInfo
- Publication number
- JP6824080B2 JP6824080B2 JP2017052635A JP2017052635A JP6824080B2 JP 6824080 B2 JP6824080 B2 JP 6824080B2 JP 2017052635 A JP2017052635 A JP 2017052635A JP 2017052635 A JP2017052635 A JP 2017052635A JP 6824080 B2 JP6824080 B2 JP 6824080B2
- Authority
- JP
- Japan
- Prior art keywords
- radiation thermometer
- substrate
- adjusting
- chamber
- angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005855 radiation Effects 0.000 title claims description 260
- 238000010438 heat treatment Methods 0.000 title claims description 112
- 238000005259 measurement Methods 0.000 title claims description 82
- 238000000034 method Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims description 79
- 230000007246 mechanism Effects 0.000 claims description 57
- 239000010453 quartz Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 230000001678 irradiating effect Effects 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 148
- 239000004065 semiconductor Substances 0.000 description 145
- 229910052736 halogen Inorganic materials 0.000 description 61
- 150000002367 halogens Chemical class 0.000 description 61
- 238000012546 transfer Methods 0.000 description 52
- 239000007789 gas Substances 0.000 description 41
- 239000012535 impurity Substances 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 16
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 12
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 229910052724 xenon Inorganic materials 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 238000000137 annealing Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 238000009529 body temperature measurement Methods 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 4
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 3
- 229910001632 barium fluoride Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000005469 synchrotron radiation Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D21/00—Arrangements of monitoring devices; Arrangements of safety devices
- F27D21/0014—Devices for monitoring temperature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0044—Furnaces, ovens, kilns
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0205—Mechanical elements; Supports for optical elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0275—Control or determination of height or distance or angle information for sensors or receivers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/047—Mobile mounting; Scanning arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/07—Arrangements for adjusting the solid angle of collected radiation, e.g. adjusting or orienting field of view, tracking position or encoding angular position
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Robotics (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
20 下部放射温度計
25 上部放射温度計
63 上側チャンバー窓
64 下側チャンバー窓
65 熱処理空間
74 サセプタ
75 保持プレート
77 基板支持ピン
78 開口部
110 パイロホルダー
111 装着部
112 引っ張りバネ
113 底板
120 角度調整機構
121 調整リング
122 第1ローレットボルト
123 第2ローレットボルト
124 バネ付きボルト
125 バネ
126 第1ゲージ
127 第2ゲージ
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (7)
- 基板に光を照射することによって該基板を加熱する熱処理装置であって、
基板を収容するチャンバーと、
前記チャンバーに収容された前記基板に光を照射する光源と、
前記基板から放射された赤外光を受光して前記基板の温度を測定する円筒形状の放射温度計と、
前記放射温度計を保持した状態で前記チャンバーの外壁に装着されるホルダーと、
前記ホルダーに設けられ、前記基板における前記放射温度計の測定位置を調整する測定位置調整機構と、
を備え、
前記測定位置調整機構は、前記放射温度計の先端を支点として前記チャンバーの外壁に対する前記放射温度計の角度を調整する角度調整機構を有し、
前記角度調整機構は、
前記放射温度計の側壁面に当接して第1の方向に沿った前記放射温度計の角度を調整する第1ボルトと、
前記放射温度計の側壁面に当接して前記第1の方向と直角をなす第2の方向に沿った前記放射温度計の角度を調整する第2ボルトと、
前記第1の方向および前記第2の方向のそれぞれと135°をなす第3の方向に沿って設けられたバネ付きボルトと、
を備え、
前記第1ボルトおよび前記第2ボルトによって前記放射温度計の角度を調整するときには前記バネ付きボルトのバネ部分が前記放射温度計の側壁面を押圧し、前記第1ボルトおよび前記第2ボルトによる前記放射温度計の角度調整が完了したときには前記バネ付きボルトのボルト部分が前記放射温度計の側壁面に当接して前記放射温度計を固定することを特徴とする熱処理装置。 - 請求項1記載の熱処理装置において、
前記角度調整機構は、
前記第1ボルトによる前記放射温度計の角度調整量を示す第1ゲージと、
前記第2ボルトによる前記放射温度計の角度調整量を示す第2ゲージと、
をさらに備えることを特徴とする熱処理装置。 - 基板に光を照射することによって該基板を加熱する熱処理装置であって、
基板を収容するチャンバーと、
前記チャンバーに収容された前記基板に光を照射する光源と、
前記基板から放射された赤外光を受光して前記基板の温度を測定する円筒形状の放射温度計と、
前記放射温度計を保持した状態で前記チャンバーの外壁に装着されるホルダーと、
前記ホルダーに設けられ、前記基板における前記放射温度計の測定位置を調整する測定位置調整機構と、
を備え、
前記ホルダーは、前記放射温度計の後端側から先端側に向けて前記放射温度計を前記ホルダーに押圧する引っ張りバネを備えることを特徴とする熱処理装置。 - 請求項1から請求項3のいずれかに記載の熱処理装置において、
前記チャンバー内にて前記基板は、前記基板の下面から放射された赤外光を通過させる開口を形設した石英のサセプタに保持され、
前記放射温度計は前記基板の斜め下方に設けられ、前記開口を通過した前記赤外光を受光することを特徴とする熱処理装置。 - チャンバー内に収容されて光照射によって加熱される基板の温度を測定する円筒形状の放射温度計の測定位置調整方法であって、
前記放射温度計を保持したホルダーを前記チャンバーの外壁に装着する装着工程と、
前記放射温度計の先端を支点として前記放射温度計の角度を調整することによって前記基板における前記放射温度計の測定位置を調整する角度調整工程と、
を備え、
前記角度調整工程は、
前記放射温度計の軸を中心とする前記放射温度計の回転角度を調整する回転角度調整工程と、
前記チャンバーの外壁に対する前記放射温度計の傾斜角度を調整する傾斜角度調整工程と、
を備えることを特徴とする放射温度計の測定位置調整方法。 - 請求項5記載の放射温度計の測定位置調整方法において、
前記傾斜角度調整工程は、
前記放射温度計の側壁面に対する第1の方向に沿った前記放射温度計の角度を調整する工程と、
前記放射温度計の側壁面に対する前記第1の方向と直角をなす第2の方向に沿った前記放射温度計の角度を調整する工程と、
を備えることを特徴とする放射温度計の測定位置調整方法。 - 請求項5または請求項6記載の放射温度計の測定位置調整方法において、
前記チャンバー内にて前記基板は、前記基板の下面から放射された赤外光を通過させる開口を形設した石英のサセプタに保持され、
前記放射温度計は前記基板の斜め下方に設けられ、前記開口を通過した前記赤外光を受光することを特徴とする放射温度計の測定位置調整方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017052635A JP6824080B2 (ja) | 2017-03-17 | 2017-03-17 | 熱処理装置および放射温度計の測定位置調整方法 |
TW106143863A TWI676215B (zh) | 2017-03-17 | 2017-12-14 | 熱處理裝置及放射溫度計之測定位置調整方法 |
KR1020180015092A KR102094591B1 (ko) | 2017-03-17 | 2018-02-07 | 열처리 장치 및 방사 온도계의 측정 위치 조정 방법 |
US15/905,275 US10784127B2 (en) | 2017-03-17 | 2018-02-26 | Method of adjusting measurement position of radiation thermometer and heat treatment apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017052635A JP6824080B2 (ja) | 2017-03-17 | 2017-03-17 | 熱処理装置および放射温度計の測定位置調整方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018157064A JP2018157064A (ja) | 2018-10-04 |
JP6824080B2 true JP6824080B2 (ja) | 2021-02-03 |
Family
ID=63519575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017052635A Active JP6824080B2 (ja) | 2017-03-17 | 2017-03-17 | 熱処理装置および放射温度計の測定位置調整方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10784127B2 (ja) |
JP (1) | JP6824080B2 (ja) |
KR (1) | KR102094591B1 (ja) |
TW (1) | TWI676215B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
US10811290B2 (en) * | 2018-05-23 | 2020-10-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for inspection stations |
TWI822903B (zh) * | 2018-12-12 | 2023-11-21 | 日商斯庫林集團股份有限公司 | 熱處理方法及熱處理裝置 |
TWI699608B (zh) * | 2019-03-15 | 2020-07-21 | 日月光半導體製造股份有限公司 | 用於組裝光學裝置之設備 |
JP7372074B2 (ja) * | 2019-08-07 | 2023-10-31 | 株式会社Screenホールディングス | 熱処理方法 |
JP7370763B2 (ja) | 2019-08-22 | 2023-10-30 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP7338441B2 (ja) * | 2019-12-13 | 2023-09-05 | ウシオ電機株式会社 | 光加熱装置 |
CN111725114B (zh) * | 2020-06-30 | 2023-07-14 | 北京北方华创微电子装备有限公司 | 加热灯的位置校正装置 |
CN112420473B (zh) * | 2020-10-26 | 2023-11-14 | 北京北方华创微电子装备有限公司 | 外延设备及其测温装置 |
CN114353952B (zh) * | 2021-12-04 | 2023-10-20 | 河南鼎力电气科技有限公司 | 一种环网柜电缆头温度测量装置及其监测方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS618834U (ja) * | 1984-06-22 | 1986-01-20 | 三菱電機株式会社 | 赤外線検出器の取付機構 |
JP2513115Y2 (ja) * | 1989-04-24 | 1996-10-02 | シャープ株式会社 | フィルタを有する露光装置 |
US5446825A (en) * | 1991-04-24 | 1995-08-29 | Texas Instruments Incorporated | High performance multi-zone illuminator module for semiconductor wafer processing |
US5715361A (en) * | 1995-04-13 | 1998-02-03 | Cvc Products, Inc. | Rapid thermal processing high-performance multizone illuminator for wafer backside heating |
US5861609A (en) * | 1995-10-02 | 1999-01-19 | Kaltenbrunner; Guenter | Method and apparatus for rapid thermal processing |
JP2003133245A (ja) * | 2001-08-10 | 2003-05-09 | Toshiba Mach Co Ltd | 縦型気相成長装置 |
KR100428035B1 (ko) * | 2001-10-23 | 2004-04-28 | 미래산업 주식회사 | 반도체 소자 테스트 핸들러의 트레이 이송장치용리미트센서 어셈블리 |
US7038173B2 (en) * | 2002-02-07 | 2006-05-02 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus and thermal processing method |
JP5349819B2 (ja) * | 2008-03-25 | 2013-11-20 | 大日本スクリーン製造株式会社 | 熱処理装置 |
JP5606024B2 (ja) * | 2009-08-28 | 2014-10-15 | 東京エレクトロン株式会社 | 被処理体加熱処理方法及び被処理体加熱処理装置 |
JP5507274B2 (ja) * | 2010-01-29 | 2014-05-28 | 大日本スクリーン製造株式会社 | 熱処理方法および熱処理装置 |
KR101198779B1 (ko) * | 2010-10-29 | 2012-11-09 | 정준오 | 정밀가공물 표면 측정장치 |
JP5487327B2 (ja) * | 2010-12-21 | 2014-05-07 | キヤノンアネルバ株式会社 | 基板熱処理装置 |
JP5819633B2 (ja) | 2011-05-13 | 2015-11-24 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
JP5855353B2 (ja) | 2011-05-13 | 2016-02-09 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
JP6026090B2 (ja) | 2011-09-26 | 2016-11-16 | 株式会社Screenホールディングス | 熱処理方法 |
JP5977038B2 (ja) * | 2012-02-15 | 2016-08-24 | 株式会社Screenホールディングス | 熱処理装置 |
JP5955658B2 (ja) * | 2012-06-15 | 2016-07-20 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
TWI576570B (zh) * | 2012-06-22 | 2017-04-01 | 維克儀器公司 | 用於輻射測溫計之遠心光學裝置、使用遠心鏡片配置以減少輻射測溫計中雜散輻射之方法及溫度測量系統 |
JP6234674B2 (ja) * | 2012-12-13 | 2017-11-22 | 株式会社Screenホールディングス | 熱処理装置 |
JP6184697B2 (ja) | 2013-01-24 | 2017-08-23 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
US10475674B2 (en) * | 2015-03-25 | 2019-11-12 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment apparatus and method for manufacturing heat treatment apparatus |
-
2017
- 2017-03-17 JP JP2017052635A patent/JP6824080B2/ja active Active
- 2017-12-14 TW TW106143863A patent/TWI676215B/zh active
-
2018
- 2018-02-07 KR KR1020180015092A patent/KR102094591B1/ko active IP Right Grant
- 2018-02-26 US US15/905,275 patent/US10784127B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2018157064A (ja) | 2018-10-04 |
TWI676215B (zh) | 2019-11-01 |
KR102094591B1 (ko) | 2020-03-27 |
US10784127B2 (en) | 2020-09-22 |
TW201836014A (zh) | 2018-10-01 |
US20180269085A1 (en) | 2018-09-20 |
KR20180106862A (ko) | 2018-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6824080B2 (ja) | 熱処理装置および放射温度計の測定位置調整方法 | |
JP6942615B2 (ja) | 熱処理方法および熱処理装置 | |
JP6838992B2 (ja) | 熱処理装置および熱処理方法 | |
JP7041594B2 (ja) | 熱処理装置 | |
KR102182796B1 (ko) | 열처리 장치 및 열처리 방법 | |
JP6837911B2 (ja) | 熱処理装置 | |
JP6845730B2 (ja) | 熱処理装置 | |
US11764100B2 (en) | Heat treatment susceptor and heat treatment apparatus | |
JP6847610B2 (ja) | 熱処理装置 | |
KR102609897B1 (ko) | 열처리 방법 | |
JP6982446B2 (ja) | 熱処理装置 | |
JP7013259B2 (ja) | 熱処理装置および熱処理方法 | |
JP2021027226A (ja) | 熱処理方法 | |
JP6814572B2 (ja) | 熱処理装置 | |
JP6899248B2 (ja) | 熱処理装置 | |
US20190393055A1 (en) | Heat treatment susceptor and heat treatment apparatus | |
JP7048372B2 (ja) | 熱処理装置および熱処理方法 | |
JP2021136376A (ja) | 熱処理方法 | |
JP7011980B2 (ja) | 熱処理装置 | |
WO2021049283A1 (ja) | 熱処理方法および熱処理装置 | |
JP2021150566A (ja) | 熱処理方法 | |
KR20230151909A (ko) | 온도 측정 방법 | |
JP2021068780A (ja) | 熱処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191223 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20201013 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201124 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201216 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210105 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210112 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6824080 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |