JP6941398B2 - ナノロッド構造を用いた超音波指紋センサーの製造方法 - Google Patents
ナノロッド構造を用いた超音波指紋センサーの製造方法 Download PDFInfo
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Description
本発明の目的は、従来の超音波指紋センサーの問題点を解決するために、フリップチップ構造の実現に困難を経験している上部電極の連結のために、シリコンナノロッドを金属電極と連結するフリップチップ構造によって具現化した半導体ナノロッド構造を融合したフリップチップ構造を有する超音波指紋センサーを提供することである。
以下、本発明の好適な実施例を添付図面に基づいて詳細に説明する。本発明の説明において、関連の公知の構成又は機能についての具体的な説明が本発明の要旨をあいまいにする可能性があると判断される場合には、その詳細な説明は省略する。また、本発明の実施例の説明において、具体的な数値は実施例に過ぎない。
Claims (7)
- 導電性基板を食刻して一定の間隔で離隔した複数のロッド生成ホールを生成する導電性モールド生成段階と、
前記複数のロッド生成ホールにナノ圧電物質を充填してナノロッドを生成するナノロッド生成段階と、
前記ロッド生成ホールの一側の前記導電性モールド縁部に側面電極生成部をマーキングする側面電極生成部表示段階と、
前記ナノロッドと前記マーキングされた側面電極生成部及びこれらを連結する導電性基板ベースを除き、残りの導電性モールドを1次食刻してナノロッドと側面電極を生成する導電性モールド食刻段階と、
前記導電性モールド食刻段階によって食刻された部分に絶縁材を充填する絶縁材充填段階と、
前記絶縁材の充填によって絶縁材で取り囲まれた前記ナノロッド及び側面電極の一端部が露出されるように2次食刻し、露出されたナノロッド及び側面電極の一端部に下部電極を形成する下部電極形成段階と、
前記下部電極が形成された表面にダミー基板(dummy substrate)を接着するダミー基板接着段階と、
前記ナノロッドと側面電極を連結する前記導電性基板ベースを除去することによって露出された前記ナノロッドと側面電極の他端部に上部電極を形成する上部電極形成段階と、
を含んでなる、ナノロッド構造を用いた超音波指紋センサーの製造方法。 - 前記導電性基板及び側面電極は、Si、GaAs、InAs、GaN、InN、Ge、ZnO及びGa2O3からなる群から選択される物質が含まれた導電性基板及び側面電極からなる、請求項1に記載のナノロッド構造を用いた超音波指紋センサーの製造方法。
- 前記導電性基板及び側面電極は、面抵抗が100Ω/sq以下の素材からなる、請求項1に記載のナノロッド構造を用いた超音波指紋センサーの製造方法。
- 前記導電性基板及び側面電極は、800〜1300℃の焼結温度での収縮率が3〜5%以下の素材からなる、請求項1に記載のナノロッド構造を用いた超音波指紋センサーの製造方法。
- 前記ナノロッド生成段階は、
前記導電性モールドに粉末化したナノ圧電物質を噴射して前記ロッド生成ホールにナノ圧電物質を充填するナノ圧電物質充填段階と、
前記ナノ圧電物質が充填された導電性モールドに接着溶液を噴射する接着溶液噴射段階と、
前記接着溶液が噴射された導電性モールドのロッド生成ホール部分を押圧して、充填されたナノ圧電物質を密集させるナノ圧電物質押圧段階と、
前記ナノ圧電物質押圧段階を経た前記導電性モールドを焼結して前記ナノ圧電物質を焼結させるナノ圧電物質焼結段階と、
を含んでなる、請求項1に記載のナノロッド構造を用いた超音波指紋センサーの製造方法。 - 前記ナノ圧電物質充填段階は、前記粉末化したナノ圧電物質に液状のナノ圧電物質及び気状のナノ圧電物質を一緒に混合して前記ロッド生成ホールに充填することからなる、請求項5に記載のナノロッド構造を用いた超音波指紋センサーの製造方法。
- 前記ナノ圧電物質は、PZT(PbZrO3)系化合物、PST(Pb(Sc、Ta)O3)系化合物、石英、(Pb、Sm)TiO3系化合物、PMN(Pb(MgNb)O3−PT(PbTiO3)系化合物、PVDF(Poly(vinylidene fluoride))系化合物及びPVDF−TrFe系化合物からなる群から選択される化合物である、請求項1に記載のナノロッド構造を用いた超音波指紋センサーの製造方法。
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