JP6922202B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 109
- 238000000034 method Methods 0.000 title claims description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 129
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 127
- 238000010438 heat treatment Methods 0.000 claims description 48
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 39
- 229910021332 silicide Inorganic materials 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 28
- 229910052759 nickel Inorganic materials 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- 229910045601 alloy Inorganic materials 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 16
- 229910052719 titanium Inorganic materials 0.000 claims description 16
- 229910004349 Ti-Al Inorganic materials 0.000 claims description 14
- 229910004692 Ti—Al Inorganic materials 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 134
- 239000010410 layer Substances 0.000 description 107
- 239000010936 titanium Substances 0.000 description 32
- 238000001069 Raman spectroscopy Methods 0.000 description 16
- 238000009826 distribution Methods 0.000 description 16
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- 239000012535 impurity Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910005883 NiSi Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- 229910005881 NiSi 2 Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
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- 229910018507 Al—Ni Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
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- 229920001721 polyimide Polymers 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910001151 AlNi Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- -1 Ni 2 Si Chemical compound 0.000 description 1
- 229910003296 Ni-Mo Inorganic materials 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- 229910004337 Ti-Ni Inorganic materials 0.000 description 1
- 229910004339 Ti-Si Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910011209 Ti—Ni Inorganic materials 0.000 description 1
- 229910010978 Ti—Si Inorganic materials 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 229910052786 argon Inorganic materials 0.000 description 1
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- 238000011156 evaluation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
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Description
本発明にかかる半導体装置は、ワイドバンドギャップ半導体を用いて構成される。実施の形態においては、ワイドバンドギャップ半導体として例えばSiCを用いて作製された炭化珪素半導体装置について、JBS構造のSBDを例に説明する。図1は、実施の形態にかかる炭化珪素半導体装置の構造を示す図2のA−A’断面図である。図2は、実施の形態にかかる炭化珪素半導体装置の構造を示す上面図である。
次に、実施の形態にかかる炭化珪素半導体装置の製造方法について説明する。ここでは、図1のJBS構造のSBDの製造方法を説明する。図3〜図8は、実施の形態にかかる炭化珪素半導体装置の製造途中の状態を示す断面図である。まず、n型炭化珪素基板1を用意する。次に、n型炭化珪素基板1のおもて面に、n-型ドリフト層2をエピタキシャル成長させる。
2 n-型ドリフト層
3 p型ウェル領域
4 p型領域
5 p+型ガードリング領域
6 JTE領域(耐圧構造部)
7 層間絶縁膜
8 オーミック電極
8a Ti−Al合金層
8b Niシリサイド層
8c Ti
8d Ni
8e Al
8f C
9 ショットキー電極
10 上部電極
11 パッシベーション膜
12 下部電極
13 フィールド酸化膜
14 コンタクトメタル
15 Al層
16 Ni層
17 Ni2Si層
18 C層
20 活性領域
30 エッジ終端領域
40 炭化珪素基体
Claims (6)
- 第1導電型の炭化珪素半導体基板と、
前記炭化珪素半導体基板のおもて面に設けられた第1導電型の第1半導体層と、
前記第1半導体層の表面に選択的に設けられた第2導電型の第1半導体領域と、
前記第1半導体層の表面に選択的に設けられた、前記第1半導体領域と接続する第2導電型の第2半導体領域と、
前記第1半導体層および前記第1半導体領域とショットキー接触する第1電極と、
前記第2半導体領域とオーミック接触する第2電極と、
を備え、
前記第2電極は、前記第1電極と接する表面にTi−Al合金が設けられ、内部にNiシリサイド層が設けられ、前記Niシリサイド層の上端及び下端から離れた内部にTiが粒状に偏在する形で分散して設けられていることを特徴とする半導体装置。 - 前記第2電極は、前記Niシリサイド層内のTiと同様の位置にCが設けられていることを特徴とする請求項1に記載の半導体装置。
- 前記Niシリサイド層の主成分は、Ni2Siであることを特徴とする請求項1または2に記載の半導体装置。
- 第1導電型の炭化珪素半導体基板のおもて面に第1導電型の第1半導体層を形成する第1工程と、
前記第1半導体層の表面に選択的に第2導電型の第1半導体領域を形成する第2工程と、
前記第1半導体層の表面に選択的に、前記第1半導体領域と接続する第2導電型の第2半導体領域を形成する第3工程と、
前記第1半導体層および前記第1半導体領域とショットキー接触する第1電極を形成する第4工程と、
前記第2半導体領域とオーミック接触する第2電極を形成する第5工程と、
を含み、
前記第5工程は、前記第2電極をAl、Ni、Tiの順で堆積し、熱処理することにより形成することを特徴とする半導体装置の製造方法。 - 前記熱処理は、900℃〜1100℃で行うことを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記第5工程は、前記Alを10〜20nmの厚さで堆積させ、前記Niを30〜90nmの厚さで堆積させ、前記Tiを30〜60nmの厚さで堆積させることを特徴とする請求項4または5に記載の半導体装置の製造方法。
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