JP6917868B2 - 基板処理方法および基板処理装置 - Google Patents

基板処理方法および基板処理装置 Download PDF

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Publication number
JP6917868B2
JP6917868B2 JP2017220075A JP2017220075A JP6917868B2 JP 6917868 B2 JP6917868 B2 JP 6917868B2 JP 2017220075 A JP2017220075 A JP 2017220075A JP 2017220075 A JP2017220075 A JP 2017220075A JP 6917868 B2 JP6917868 B2 JP 6917868B2
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Japan
Prior art keywords
phosphoric acid
aqueous solution
acid aqueous
tank
substrate
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JP2017220075A
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English (en)
Japanese (ja)
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JP2019091815A5 (zh
JP2019091815A (ja
Inventor
修 堀口
修 堀口
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Priority to JP2017220075A priority Critical patent/JP6917868B2/ja
Priority to CN201880073324.4A priority patent/CN111344839A/zh
Priority to KR1020207013563A priority patent/KR102483802B1/ko
Priority to PCT/JP2018/037581 priority patent/WO2019097901A1/ja
Priority to TW107137207A priority patent/TWI701086B/zh
Publication of JP2019091815A publication Critical patent/JP2019091815A/ja
Publication of JP2019091815A5 publication Critical patent/JP2019091815A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2017220075A 2017-11-15 2017-11-15 基板処理方法および基板処理装置 Active JP6917868B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017220075A JP6917868B2 (ja) 2017-11-15 2017-11-15 基板処理方法および基板処理装置
CN201880073324.4A CN111344839A (zh) 2017-11-15 2018-10-09 衬底处理方法及衬底处理装置
KR1020207013563A KR102483802B1 (ko) 2017-11-15 2018-10-09 기판 처리 방법 및 기판 처리 장치
PCT/JP2018/037581 WO2019097901A1 (ja) 2017-11-15 2018-10-09 基板処理方法および基板処理装置
TW107137207A TWI701086B (zh) 2017-11-15 2018-10-22 基板處理方法及基板處理裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017220075A JP6917868B2 (ja) 2017-11-15 2017-11-15 基板処理方法および基板処理装置

Publications (3)

Publication Number Publication Date
JP2019091815A JP2019091815A (ja) 2019-06-13
JP2019091815A5 JP2019091815A5 (zh) 2020-12-10
JP6917868B2 true JP6917868B2 (ja) 2021-08-11

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ID=66539458

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JP2017220075A Active JP6917868B2 (ja) 2017-11-15 2017-11-15 基板処理方法および基板処理装置

Country Status (5)

Country Link
JP (1) JP6917868B2 (zh)
KR (1) KR102483802B1 (zh)
CN (1) CN111344839A (zh)
TW (1) TWI701086B (zh)
WO (1) WO2019097901A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6952860B2 (ja) * 2019-03-29 2021-10-27 東京エレクトロン株式会社 基板処理装置、および基板処理方法
JP6843173B2 (ja) * 2019-03-29 2021-03-17 東京エレクトロン株式会社 基板処理装置、および基板処理方法
JP7467051B2 (ja) * 2019-09-13 2024-04-15 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理方法、及び、半導体製造方法
JP7312656B2 (ja) * 2019-09-24 2023-07-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR102670179B1 (ko) * 2020-09-09 2024-05-28 가부시키가이샤 스크린 홀딩스 기판 처리 방법, 및 기판 처리 장치
JP2022148186A (ja) * 2021-03-24 2022-10-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および配管着脱パーツ洗浄方法
JP7364641B2 (ja) * 2021-10-27 2023-10-18 三益半導体工業株式会社 スピンエッチング装置用ポンプフィルターの再生システム及び再生方法
KR102449897B1 (ko) * 2022-01-14 2022-09-30 삼성전자주식회사 습식 식각 방법 및 이를 이용한 반도체 소자 제조 방법.
KR20230157596A (ko) 2022-05-10 2023-11-17 세메스 주식회사 기판처리장치 및 기판처리방법
KR20240065582A (ko) * 2022-11-03 2024-05-14 주식회사 제우스 기판 식각 방법 및 기판 식각 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09129588A (ja) * 1995-10-31 1997-05-16 Fujitsu Ltd エッチング液の濃度管理方法及びエッチング装置
JPH09275091A (ja) * 1996-04-03 1997-10-21 Mitsubishi Electric Corp 半導体窒化膜エッチング装置
JPH11300190A (ja) * 1998-04-27 1999-11-02 Sony Corp 半導体製造用薬液調合装置
JP3788985B2 (ja) * 2002-09-17 2006-06-21 エム・エフエスアイ株式会社 エッチング液の再生方法、エッチング方法およびエッチング装置
US8409997B2 (en) * 2007-01-25 2013-04-02 Taiwan Semiconductor Maufacturing Co., Ltd. Apparatus and method for controlling silicon nitride etching tank
JP5931484B2 (ja) * 2012-02-13 2016-06-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6502633B2 (ja) * 2013-09-30 2019-04-17 芝浦メカトロニクス株式会社 基板処理方法及び基板処理装置
JP6324775B2 (ja) 2014-03-17 2018-05-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理装置を用いた基板処理方法
JP6320868B2 (ja) * 2014-07-29 2018-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6320869B2 (ja) * 2014-07-29 2018-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR101671118B1 (ko) * 2014-07-29 2016-10-31 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
JP6499414B2 (ja) * 2014-09-30 2019-04-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN108140572B (zh) * 2015-09-30 2022-12-30 芝浦机械电子株式会社 基板处理装置及基板处理方法

Also Published As

Publication number Publication date
WO2019097901A1 (ja) 2019-05-23
TW201936274A (zh) 2019-09-16
JP2019091815A (ja) 2019-06-13
CN111344839A (zh) 2020-06-26
TWI701086B (zh) 2020-08-11
KR20200062327A (ko) 2020-06-03
KR102483802B1 (ko) 2022-12-30

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