JP6902167B2 - ナノ秒パルスを使用する任意波形の発生 - Google Patents
ナノ秒パルスを使用する任意波形の発生 Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/017—Adjustment of width or dutycycle of pulses
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/64—Generators producing trains of pulses, i.e. finite sequences of pulses
- H03K3/72—Generators producing trains of pulses, i.e. finite sequences of pulses with means for varying repetition rate of trains
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K7/00—Modulating pulses with a continuously-variable modulating signal
- H03K7/08—Duration or width modulation ; Duty cycle modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/248—Components associated with the control of the tube
- H01J2237/2485—Electric or electronic means
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Generation Of Surge Voltage And Current (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
105 ナノ秒パルサ
110 負荷
111 プラズマ
115,116 インダクタ
120 キャパシタ
125 ダイオード
130 プルダウンレジスタ
140 有効負荷電流発生器
142 有効負荷ダイオード
143 有効負荷キャパシタ
350,450,550 回路
706 パルサ・変圧器段
707 抵抗出力段
710 導線段
711 阻止キャパシタ・DCバイアス電源段
Claims (28)
- 高電圧波形発生器であって、
発生器インダクタと、
前記発生器インダクタと電気及び/又は誘導結合される高電圧ナノ秒パルサであって、
複数の第1高電圧パルスを包含する第1パルスバーストであって、前記複数の第1高電圧パルスの各パルスがパルス幅を有し、第1バースト周期を有する第1パルスバーストと、
複数の第2高電圧パルスを包含する第2パルスバーストであって、前記複数の第2高電圧パルスの各パルスがパルス幅を有し、第2バースト周期を有する第2パルスバーストと、
を前記発生器インダクタにチャージするように構成される高電圧ナノ秒パルサと、
前記高電圧ナノ秒パルサ及び前記発生器インダクタと結合されるプラズマであって、プラズマにおける電圧が、
第1出力パルス幅と第1出力電圧とを有する第1プラズマパルスであって、前記第1出力パルス幅が前記第1バースト周期と実質的に等しく前記第1出力電圧が前記複数の第1高電圧パルスの各パルスのパルス幅に実質的に比例する、第1プラズマパルスと、
第2出力パルス幅と第2出力電圧とを有する第2プラズマパルスであって、前記第2出力パルス幅が前記第2バースト周期と実質的に等しく、前記第2出力電圧が前記複数の第2高電圧パルスの各パルスのパルス幅に実質的に比例する、第2プラズマパルスと、
に従って変化する、プラズマと、
を包含する高電圧波形発生器。 - 前記第1パルスバーストと前記第2パルスバーストのいずれか又は両方が500Vより大きい振幅を有する、請求項1に記載の高電圧波形発生器。
- 前記第1プラズマパルスと前記第2プラズマパルスのいずれか又は両方が500Vより大きい振幅を有する、請求項1に記載の高電圧波形発生器。
- 前記第2パルスバーストが前記第1パルスバーストの振幅と異なる振幅を有する、請求項1に記載の高電圧波形発生器。
- 前記複数の第1高電圧パルスのうち一つ以上の振幅が前記複数の第1高電圧パルスのうち他の一つ以上の振幅と異なっている、請求項1に記載の高電圧波形発生器。
- 前記第1プラズマパルスの電圧が前記第2プラズマパルスの電圧と異なっている、請求項1に記載の高電圧波形発生器。
- 前記発生器インダクタ及び前記高電圧ナノ秒パルサと電気及び/又は誘導結合されるプルダウンレジスタをさらに包含する、請求項1に記載の高電圧波形発生器。
- 変圧器をさらに包含する、請求項1に記載の高電圧波形発生器。
- 前記第1バースト周期及び/又は前記第2バースト周期が約50msより短い、請求項1に記載の高電圧波形発生器。
- 前記第1プラズマパルスと前記第2プラズマパルスのいずれか又は両方が前記プラズマ内で電位を確立する、請求項1に記載の高電圧波形発生器。
- 前記第1プラズマパルスと前記第2プラズマパルスのいずれか又は両方が前記プラズマ内でイオンを加速させる、請求項1に記載の高電圧波形発生器。
- 前記複数の第1高電圧パルス及び/又は前記複数の第2高電圧パルスのいずれか又は両方が約50kHzより高い周波数を有する、請求項1に記載の高電圧波形発生器。
- 前記複数の第1高電圧パルスのうち少なくとも一つのパルスがパルス幅を有する、及び/又は、前記複数の第2高電圧パルスのうち少なくとも一つのパルスが500nsより短いパルス幅を有する、請求項1に記載の高電圧波形発生器。
- 前記発生器インダクタが漂遊インダクタンスを包含する、請求項1に記載の高電圧波形発生器。
- 前記発生器インダクタが約20μHより低いインダクタンスを有する、請求項1に記載の高電圧波形発生器。
- 前記高電圧波形発生器は、10kW以上のピーク出力パワーを発生させる、請求項1に記載の高電圧波形発生器。
- 前記プラズマの性質が実質的に容量性である、請求項1に記載の高電圧波形発生器。
- プラズマ内に高電圧波形を発生させる為の方法であって、
複数の第1高電圧パルスを包含する第1パルスバーストを発生させることであって、前記複数の第1高電圧パルスの各パルスがパルス幅と500Vより高い電圧とを有し、前記第1パルスバーストが第1バースト周期を有することと、
前記第1パルスバーストを発生器インダクタにチャージすることと、
第1出力パルス幅と第1出力電圧とを有する第1出力パルスを出力することであって、前記第1出力パルス幅が前記第1バースト周期と実質的に等しく、前記第1出力電圧が前記複数の第1高電圧パルスの各々の前記パルス幅に実質的に比例することと、
複数の第2高電圧パルスを包含する第2パルスバーストを発生させることであって、前記複数の第2高電圧パルスの各パルスがパルス幅を有し、前記第2パルスバーストが第2バースト周期を有することと、
前記第2パルスバーストを発生器インダクタにチャージすることと、
第1出力パルス幅と第2出力電圧とを有する第2出力パルスを出力することであって、第2出力パルス幅が前記第2バースト周期と実質的に等しく、前記第2出力電圧が前記複数の第2高電圧パルスの各々の前記パルス幅に実質的に比例することと、
を包含する方法。 - 前記第1出力パルスと前記第2出力パルスとがプラズマに印加される、請求項18に記載の方法。
- 前記第1出力パルスと前記第2出力パルスとがプラズマ内でイオンを加速させる、請求項18に記載の方法。
- 前記発生器インダクタのチャージが前記発生器インダクタにエネルギーを通過させることを包含する、請求項18に記載の方法。
- 前記複数の第1高電圧パルスのうち少なくとも一つのパルスがパルス幅を有する、及び/又は、前記複数の第2高電圧パルスのうち少なくとも一つのパルスが500nsより短いパルス幅を有する、請求項18に記載の方法。
- 前記複数の第1高電圧パルスのうち少なくとも一つのパルスが異なるパルス幅を有する、及び/又は、前記複数の第2高電圧パルスのうち少なくとも一つのパルスが異なるパルス幅を有する、請求項18に記載の方法。
- 前記複数の第1高電圧パルスのうち一つ以上の振幅が前記複数の第1高電圧パルスのうち他の一つ以上の振幅と異なっている、請求項18に記載の方法。
- 高電圧波形発生器であって、
発生器インダクタと、
前記発生器インダクタと電気結合される一つ以上のソリッドステートスイッチを有する高電圧ナノ秒パルサであって、バースト周期を有するパルスバーストを生成するように構成される高電圧ナノ秒パルサであり、前記パルスバーストが異なるパルス幅を有する複数のパルスを包含する、高電圧ナノ秒パルサと、
前記高電圧ナノ秒パルサ及び前記発生器インダクタと電気結合されるプラズマであって、プラズマにおける電圧が、前記バースト周期と実質的に等しいパルス幅を持つ出力パルスを有し、プラズマにおける電圧が、前記複数のパルスの前記パルス幅に実質的に比例するように変化する、プラズマと、
を包含する高電圧波形発生器。 - 前記複数のパルスの少なくとも部分集合がパルス幅を有してパルス幅が徐々に大きくなり、前記プラズマにおける電圧の絶対値が増加する、請求項25に記載の高電圧波形発生器。
- 前記複数のパルスの少なくとも部分集合がパルス幅を有してパルス幅が徐々に小さくなり、前記プラズマにおける電圧の絶対値が減少する、請求項25に記載の高電圧波形発生器。
- 前記プラズマにおける電圧が前記プラズマ内でイオンを加速させる、請求項25に記載の高電圧波形発生器。
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JP2021101259A JP7216772B2 (ja) | 2017-08-25 | 2021-06-18 | ナノ秒パルスを使用する高電圧波形発生器および高電圧波形発生方法 |
JP2023006913A JP2023033592A (ja) | 2017-08-25 | 2023-01-20 | ナノ秒パルスを使用する任意波形の発生 |
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US201762550251P | 2017-08-25 | 2017-08-25 | |
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US201762553187P | 2017-09-01 | 2017-09-01 | |
US62/553,187 | 2017-09-01 | ||
PCT/US2018/048206 WO2019040949A1 (en) | 2017-08-25 | 2018-08-27 | ARBITRARY WAVEFORM GENERATION USING NANO-SECOND PULSES |
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JP2021101259A Active JP7216772B2 (ja) | 2017-08-25 | 2021-06-18 | ナノ秒パルスを使用する高電圧波形発生器および高電圧波形発生方法 |
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US (5) | US10304661B2 (ja) |
EP (1) | EP3665775A4 (ja) |
JP (3) | JP6902167B2 (ja) |
KR (3) | KR102208429B1 (ja) |
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US20220399188A1 (en) | 2022-12-15 |
US20200168436A1 (en) | 2020-05-28 |
US11658007B2 (en) | 2023-05-23 |
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