JP5808012B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP5808012B2 JP5808012B2 JP2011286024A JP2011286024A JP5808012B2 JP 5808012 B2 JP5808012 B2 JP 5808012B2 JP 2011286024 A JP2011286024 A JP 2011286024A JP 2011286024 A JP2011286024 A JP 2011286024A JP 5808012 B2 JP5808012 B2 JP 5808012B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
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- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
- H05H2242/26—Matching networks
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
[プラズマ処理装置の構成]
[第1高周波電源の回路構成]
[第2高周波電源及び残留高周波除去部の回路構成]
[残留高周波除去部の作用]
[他の実施形態または変形例]
16 サセプタ(下部電極)
36,38 高周波電源
40,42 整合器
43,45 高周波給電ライン
46 上部電極(シャワーヘッド)
56 処理ガス供給源
72 主制御部
74 残留高周波除去部
Claims (7)
- 被処理基板を出し入れ可能に収容する真空排気可能な処理容器内で処理ガスのプラズマを生成し、前記プラズマの下で前記基板に所望の処理を施すプラズマ処理装置であって、
直流電源とスイッチング素子とを有し、前記スイッチング素子をスイッチングパルスにより高周波帯域の周波数でオン/オフすることにより、前記直流電源の直流出力を高周波出力に変換するスイッチング方式の高周波電源と、
前記高周波電源より出力される前記高周波を前記プラズマに供給するための高周波給電ラインと、
前記高周波給電ライン上で前記高周波電源側のインピーダンスとその負荷側のインピーダンスとを整合させるための整合器と、
前記高周波のパワーがオン状態になるオン期間とオフ状態になるオフ期間とを一定のパルス周波数で交互に繰り返すように、前記高周波電源を制御する高周波パワー変調部と、
前記パルス周波数の各サイクルにおいて前記オフ期間中に前記高周波給電ライン上に残留している高周波を除去するための残留高周波除去部と
を具備するプラズマ処理装置。 - 前記高周波電源は、フルブリッジ回路を構成する第1組のスイッチング素子と第2組のスイッチング素子とを有し、前記スイッチングパルスにより、前記高周波の各サイクルにおいて、前の半サイクルでは前記第2組のスイッチング素子をオフ状態に保持して前記第1組のスイッチング素子をオンにし、後の半サイクルでは前記第1組のスイッチング素子をオフ状態に保持して前記第2組のスイッチング素子をオンにする、請求項1に記載のプラズマ処理装置。
- 前記高周波電源は、ハーフブリッジ回路を構成する第1のスイッチング素子と第2のスイッチング素子とを有し、前記スイッチングパルスにより、前記高周波の各サイクルにおいて、前の半サイクルでは前記第2のスイッチング素子をオフ状態に保持して前記第1のスイッチング素子をオンにし、後の半サイクルでは前記第1のスイッチング素子をオフ状態に保持して前記第2のスイッチング素子をオンにする、請求項1に記載のプラズマ処理装置。
- 前記高周波電源は、前記パルス周波数の各サイクルにおいてオン時間中は前記スイッチング素子に前記スイッチングパルスを供給し続け、オフ時間中は前記スイッチング素子に対して前記スイッチングパルスの供給を停止する、請求項1〜3のいずれか一項に記載のプラズマ処理装置。
- 前記高周波電源は、負荷回路に対して前記スイッチング素子と直列に接続される直列共振回路を有する、請求項1〜4のいずれか一項に記載のプラズマ処理装置。
- 前記残留高周波除去部は、前記高周波給電ラインと接地電位部材との間に直列に接続される抵抗およびスイッチを有し、前記パルス周波数の各サイクルにおいて前記オン期間中は前記スイッチをオフ状態に保持し、前記オフ期間中に前記スイッチをオンにする、請求項1〜5のいずれか一項に記載のプラズマ処理装置。
- 前記処理容器内に前記基板を載置するための高周波電極が配置され、前記高周波電極に前記高周波給電ラインが電気的に接続される、請求項1〜6のいずれか一項に記載のプラズマ処理装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011286024A JP5808012B2 (ja) | 2011-12-27 | 2011-12-27 | プラズマ処理装置 |
CN201280064757.6A CN104025266B (zh) | 2011-12-27 | 2012-12-13 | 等离子体处理装置 |
KR1020147017715A KR102038642B1 (ko) | 2011-12-27 | 2012-12-13 | 플라즈마 처리 장치 |
US14/368,865 US9355822B2 (en) | 2011-12-27 | 2012-12-13 | Plasma processing apparatus |
PCT/JP2012/007975 WO2013099133A1 (ja) | 2011-12-27 | 2012-12-13 | プラズマ処理装置 |
TW101148117A TWI552223B (zh) | 2011-12-27 | 2012-12-18 | 電漿處理裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2011286024A JP5808012B2 (ja) | 2011-12-27 | 2011-12-27 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
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JP2013135159A JP2013135159A (ja) | 2013-07-08 |
JP5808012B2 true JP5808012B2 (ja) | 2015-11-10 |
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JP2011286024A Active JP5808012B2 (ja) | 2011-12-27 | 2011-12-27 | プラズマ処理装置 |
Country Status (6)
Country | Link |
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US (1) | US9355822B2 (ja) |
JP (1) | JP5808012B2 (ja) |
KR (1) | KR102038642B1 (ja) |
CN (1) | CN104025266B (ja) |
TW (1) | TWI552223B (ja) |
WO (1) | WO2013099133A1 (ja) |
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JP5935116B2 (ja) * | 2011-12-16 | 2016-06-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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KR101980281B1 (ko) * | 2013-12-27 | 2019-05-21 | 주식회사 원익아이피에스 | 플라즈마처리장치 및 플라즈마처리방법 |
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JP6295119B2 (ja) * | 2014-03-25 | 2018-03-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
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