JP6888749B1 - 電子部品装置を製造する方法 - Google Patents
電子部品装置を製造する方法 Download PDFInfo
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- JP6888749B1 JP6888749B1 JP2020573064A JP2020573064A JP6888749B1 JP 6888749 B1 JP6888749 B1 JP 6888749B1 JP 2020573064 A JP2020573064 A JP 2020573064A JP 2020573064 A JP2020573064 A JP 2020573064A JP 6888749 B1 JP6888749 B1 JP 6888749B1
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- rewiring
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Abstract
Description
60質量部のエトキシ化イソシアヌル酸トリアクリレート(新中村化学工業株式会社製、A−9300)、15質量部のシリカフィラー(株式会社アドマテックス製、SE2050、平均粒径:0.5μm)、エポキシシランで表面処理された15質量部のシリカフィラー(株式会社アドマテックス製、SE2050SEJ、平均粒径:0.5μm)、30質量部のメタクリル表面処理ナノシリカフィラー(株式会社アドマテックス製、YA050CSM、平均粒径:約50nm)、及び10質量部の樹脂フィラー(ロームアンドハースジャパン(株)製、EXL−2655:コアシェルタイプ有機微粒子)を、溶媒としてのメチルエチルケトンに加え、溶媒以外の成分の合計濃度が60質量%である混合液を得た。この混合液を、ビーズを加えてからビーズミル(フリッチュ・ジャパン株式会社製、遊星型微粉砕機P−7)で30分撹拌した。その後、混合液に60質量部のフェノキシ樹脂(東都化成株式会社製、ZX1356、Tg:約71℃、重量平均分子量:約63000))を加え、再度、混合液をビーズミルで30分撹拌した。続いて、2質量部のジクミル過酸化物(日油株式会社製、パークミルD)を加えてから混合液を更に撹拌した。撹拌後の混合液からビーズをろ過によって除去して、ワニスを得た。得られたワニスを支持フィルムに塗工し、塗膜を乾燥して、厚さ20μmの接着剤フィルムを形成させた。
支持体としてのガラス板と、ガラス板上に形成された仮固定材層(剥離層)とを有するキャリア基材(三井金属鉱業株式会社製「HRDP」、幅12インチ、厚さ1.1mm)を準備した。このキャリア基材の仮固定材層上に、感光性樹脂フィルム(日立化成株式会社製「RD1215」、厚さ15μm)をラミネートし、これを所定のパターンで露光し、現像することにより、受動部品及び半導体チップの位置合わせ用のアライメントマークを形成した。次いで、仮固定材層上に上述の接着剤フィルムをラミネートすることにより、接着層を形成した。接着層上に導電性ペースト(日立化成株式会社製「SP−1000」)を印刷することにより、厚さ60μm受動部品搭載用の接続部の前駆体としてパッドを形成させた。パッド上に、受動部品として、W0.4mm×D0.2mm×H0.13mmのサイズを有する0Ω抵抗部品(パナソニック株式会社製「ERJXGN0R00Y」、)及びW0.6mm×D0.3mm×H0.23mmのサイズを有する0Ω抵抗部品(パナソニック株式会社製「ERJ1GN0R00C」)を搭載した。次に、W7.3mm×D7.3mm×H0.2mmのサイズを有し、接続部として高さ40μmの銅バンプを有するチップ部品(株式会社ウォルツ製「CC80」)256個を接着層上の所定の位置に配置した。得られた構造体を、接着層の硬化のためオーブン中で175℃で2時間加熱し、続いて導電性ペーストの硬化による接続部の形成のため最高温度265℃のリフーロ炉で加熱した。続いて、接着層上の受動部品及びチップ部品を封止する厚さ0.5mmの封止層を、固形の封止材(日立化成株式会社製「CEL−400ZHF40−F1G」)を用いたコンプレッションモールドにより形成した。キャリア基材を接着層から剥離し、接着層を、受動部品及び半導体チップの接続部が露出する回路面が形成されるまで研削して、封止構造体を得た。得られた封止構造体におけるダイシフト量(搭載位置の設計値からのずれ)は、チップ部品256個の平均で、X方向に2.7μm、Y方向に1.6μmであった。
封止構造体の作製に用いたものと同じキャリア基材の仮固定材層上に、感光性絶縁樹脂(日立化成株式会社「AH3000」)の露光及び現像による絶縁層の形成と、銅スパッタ及びめっきによる再配線の形成とを含む方法により、表層部に設けられた銅パッドを有する2層構成の再配線層を形成した。再配線層の銅パッドの上に、銅めっき(高さ10μm)、及びスズ―銀はんだめっき(高さ15μm)をこの順に形成することにより、バンプを形成した。
封止構造体の回路面に、絶縁性接着層(日立化成株式会社製「AK1220」)をラミネートした。封止構造体を、ダイシングソーにより絶縁性接着層とともに切断して、15.2mm×13.2mmのサイズを有する封止構造体を切り出した。これを、再配線構造体の所定の位置に、フリップチップボンダーによって温度120℃、加圧時間2秒の条件で予備的に接続した。その後、ラミネータを用いた300℃の加熱及び1.0MPaの加圧により、電子部品及び半導体チップの接続部と再配線構造体のバンプとを接合させた。厚さ0.05μmのチタン層、次いで厚さ2μmの銅層をスパッタによって形成することにより、封止構造体の封止層を覆うシールド膜を形成させた。最後に、封止構造体に接続された再配線構造体から、機械剥離によってキャリア基材を剥離して、封止構造体及び再配線構造体から構成される電子部品装置を得た。
Claims (8)
- 対向する2つの主面を有する封止層と前記封止層内に封止された電子部品と前記電子部品に接続された接続部とを備える封止構造体であって、前記接続部が前記封止層の一方の主面である回路面に露出している、封止構造体を準備する工程と、
対向する2つの主面を有する再配線部と前記再配線部の一方の主面上に設けられた複数のバンプとを備える再配線構造体であって、前記再配線部が前記複数のバンプに接続された再配線、及び絶縁層を含む、再配線構造体を準備する工程と、
前記封止構造体と前記再配線構造体とを、前記回路面と前記複数のバンプとが対向する向きで、絶縁性接着層を介在させながら、前記接続部と前記複数のバンプのうち少なくとも一部とが接続されるように接着し、それにより前記封止構造体と前記再配線構造体とを接続する工程と、
を備え、
前記封止構造体を準備する工程が、
支持体、仮固定材層、及び硬化性の接着層を備え、これらがこの順に積層されている、複合キャリア基材を準備することと、
前記複合キャリア基材の前記接着層上に、前記電子部品を、前記接着層に接する前記接続部を前記接着層と前記電子部品との間に介在させながら配置することと、
前記接着層を硬化させることにより、前記電子部品を前記複合キャリア基材に対して固定することと、
前記電子部品を封止する前記封止層を前記接着層上に形成することと、
前記封止層を硬化させることと、
前記仮固定材層を前記接着層から剥離することにより、前記接着層、前記電子部品及び前記封止層を有する封止構造体を得ることと、
前記封止構造体を前記接着層側から研削することにより、前記接続部が露出した前記回路面を形成することと、
をこの順で含む、
電子部品装置を製造する方法。 - 前記再配線構造体を準備する工程が、
支持体及び該支持体上に設けられた仮固定材層を有するキャリア基材を準備することと、
前記仮固定材層上に前記再配線部を形成することと、
前記再配線部の前記キャリア基材とは反対側の主面上に、前記再配線に接続された前記複数のバンプを形成することと、
を含み、
当該方法が、
前記封止構造体に接続された前記再配線構造体から前記キャリア基材を剥離する工程を更に備える、請求項1に記載の方法。 - 前記再配線構造体が前記封止構造体に接続されたときに、前記再配線部が前記封止構造体の端部よりも外側にはみ出す、請求項1又は2に記載の方法。
- 前記複数のバンプのうち一部が、前記再配線構造体が前記封止構造体に接続されたときに前記封止構造体の端部よりも外側にはみ出す部分の前記再配線部上に配置される、請求項3に記載の方法。
- 前記再配線構造体に接続された前記封止構造体の外表面のうち前記絶縁性接着層と接していない部分を覆う導電性のシールド膜を形成する工程を更に備える、請求項1〜4のいずれか一項に記載の方法。
- 前記再配線構造体に接続された前記封止構造体の外表面のうち前記絶縁性接着層と接していない部分と、前記再配線部の前記封止構造体側の主面のうち前記封止構造体の端部よりも外側にはみ出した部分とを覆う導電性のシールド膜を形成する工程を更に備え、
前記導電性のシールド膜が、前記封止構造体の端部よりも外側にはみ出した部分の前記再配線部上に配置された前記バンプと接続される、請求項4に記載の方法。 - 前記封止構造体が複数の前記電子部品を備え、前記複数の電子部品が、ICチップ、及びチップ型の受動部品を含む、請求項1〜6のいずれか一項に記載の方法。
- 前記封止構造体と前記再配線構造体とを接続する工程が、
前記封止構造体及び前記再配線構造体を、前記絶縁性接着層を介在させながら、前記バンプの融点よりも低い温度に加熱しながら圧着することにより、前記接続部と前記複数のバンプのうち少なくとも一部とが互いに接するように、前記封止構造体と前記再配線構造体とを予備的に接続することと、
前記封止構造体及び前記再配線構造体を前記バンプの融点よりも高い温度に加熱しながら加圧することにより、前記接続部と前記複数のバンプのうち少なくとも一部とを接合させることと、
をこの順に含む、請求項1〜7のいずれか一項に記載の方法。
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